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    • 32. 发明授权
    • Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer
    • 在半导体晶片上化学机械研磨金属的装置和方法
    • US06227947B1
    • 2001-05-08
    • US09366231
    • 1999-08-03
    • Tien-Chen HuJih-Churng TwuYing-Ho ChenTsu Shih
    • Tien-Chen HuJih-Churng TwuYing-Ho ChenTsu Shih
    • B24B100
    • B24B53/017B24B53/013
    • An apparatus and a method for chemical mechanical polishing a metal on a semiconductor wafer capable of achieving improved pad life are disclosed. In the apparatus, in addition to a first spray nozzle used for spraying a slurry solution onto the top of a polishing pad, a second spray nozzle is provided for mounting juxtaposed to a conditioning pad for dispensing a cleaning solution capable of dissolving polishing debris formed on the polishing pad surface. The apparatus may further include at least one cleaning solution reservoir for storing and delivering a cleaning solution to the second spray nozzle. The method can be advantageously carried out in two-steps during which a first cleaning solution is sprayed onto the pad surface for dissolving the polishing debris, and then a second cleaning solution is sprayed onto the pad surface for removing or flushing away the dissolved debris. In one illustration for the removal of oxides of copper, an acid-containing or ammonium hydroxide-containing cleaning solution is used advantageously to dissolve the oxides, and then deionized water is used to remove the dissolved debris from the pad surface.
    • 公开了一种用于化学机械抛光半导体晶片上的能够实现改善的焊盘寿命的装置和方法。 在该装置中,除了用于将浆液溶液喷洒到抛光垫的顶部上的第一喷嘴之外,还提供了第二喷嘴,用于与调节垫并置安装,用于分配能够溶解在 抛光垫表面。 该设备还可以包括至少一个清洁溶液储存器,用于将清洁溶液存储并输送到第二喷嘴。 该方法可以有利地在两个步骤中进行,在此期间将第一清洁溶液喷涂到垫表面上用于溶解抛光碎片,然后将第二清洁溶液喷涂到垫表面上以除去或冲洗掉溶解的碎屑。 在一个说明中,为了去除铜的氧化物,含有酸或氢氧化铵的清洗溶液有利地用于溶解氧化物,然后使用去离子水从衬垫表面去除溶解的碎屑。