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31. 发明授权

US06554002B2 Method for removing etching residues 有权
标题翻译：去除蚀刻残留物的方法
公开(公告)号：US06554002B2
公开(公告)日：2003-04-29
申请号：US09789349
申请日：2001-02-21
申请人： Chih-Ning Wu , Cheng-Yuan Tsai , Chan-Lon Yang
发明人： Chih-Ning Wu , Cheng-Yuan Tsai , Chan-Lon Yang
IPC分类号： H01L21302
CPC分类号： H01L21/31111 , H01L21/31116 , H01L21/76807
摘要： A method for removing fluorine-containing etching residues during dual damascene process comprises providing a dual damascene structure having a copper conductor structure therein, a cap layer formed on the copper conductor structure and the dual damascene structure, and a low dielectric constant dielectric layer on the cap layer. The low dielectric constant dielectric layer formed by spin-on polymer method has at least an opening above the copper conductor structure. The cap layer is etched by fluorine-containing plasma to expose the copper conductor structure. The dual damascene structure is cleaned with a solvent and then the fluorine-containing etching residues are removed by plasma sputtering treatment or baking, or by a combination of both. The addition of baking and plasma sputtering treatment can prevent poor adhesion between the subsequent metal diffusion barrier layer and the low dielectric constant dielectric layer.
摘要翻译：一种在双镶嵌工艺中去除含氟蚀刻残留物的方法包括提供一种其中具有铜导体结构的双镶嵌结构，在铜导体结构上形成的盖层和双镶嵌结构，以及在其上的低介电常数介电层盖层。通过旋涂聚合物方法形成的低介电常数介电层在铜导体结构之上至少有一个开口。盖层被含氟等离子体蚀刻以暴露铜导体结构。双重镶嵌结构用溶剂清洗，然后通过等离子体溅射处理或烘烤除去含氟蚀刻残渣，或通过两者的组合。添加烘烤和等离子体溅射处理可以防止后续金属扩散阻挡层和低介电常数介电层之间的粘附性差。

32. 发明授权

US06495472B2 Method for avoiding erosion of conductor structure during removing etching residues 有权
标题翻译：在去除蚀刻残留物时避免导体结构侵蚀的方法
公开(公告)号：US06495472B2
公开(公告)日：2002-12-17
申请号：US09791027
申请日：2001-02-21
申请人： Chih-Ning Wu , Chan-Lon Yang
发明人： Chih-Ning Wu , Chan-Lon Yang
IPC分类号： H01L21302
CPC分类号： H01L21/76838 , H01L21/31116
摘要： A method for avoiding erosion of a conductor structure during a procedure of removing etching residues is provided. The method provides a semiconductor structure and the conductor structure formed therein. A cap layer is formed on the conductor structure and the semiconductor and a dielectric layer formed thereon. The dielectric layer and the cap layer are then etched to partially expose the conductor structure. The etching residues are removed with an amine-containing solution and the amine-containing solution is removed with an intermediate solvent to avoid erosion of the exposed conductor structure. As a key step of the present invention, the intermediate solvent comprises N-methylpyrrolidone or isopropyl alcohol and can protect the conductor structure from erosion.
摘要翻译：提供了一种在去除蚀刻残留物的过程中避免导体结构侵蚀的方法。该方法提供半导体结构和其中形成的导体结构。在导体结构和半导体上形成覆盖层和形成在其上的电介质层。然后对介电层和盖层进行蚀刻以部分地暴露导体结构。蚀刻残余物用含胺溶液除去，并且用中间体溶剂除去含胺溶液以避免暴露的导体结构的侵蚀。作为本发明的关键步骤，中间体溶剂包括N-甲基吡咯烷酮或异丙醇，并且可以保护导体结构免受侵蚀。

33. 发明授权

US06399514B1 High temperature silicon surface providing high selectivity in an oxide etch process 失效
标题翻译：高温硅表面在氧化蚀刻工艺中提供高选择性
公开(公告)号：US06399514B1
公开(公告)日：2002-06-04
申请号：US09645924
申请日：2000-08-24
申请人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
发明人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
IPC分类号： H01L21302
CPC分类号： H01L21/67069 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01L21/6831
摘要： A plasma process for etching oxide and having a high selectivity to silicon including flowing into a plasma reaction chamber a fluorine-containing etching gas and maintaining a temperature of an exposed silicon surface within said chamber at a temperature of between 200° C. and 300° C. An example of the etching gas includes SiF4 and a fluorocarbon gas. The plasma may be generated by a capacitive discharge type plasma generator or by an electromagnetically coupled plasma generator, such as an inductively coupled plasma generator. The high selectivity exhibited by the etch process permits use of an electromagnetically coupled plasma generator, which in turn permits the etch process to be performed at low pressures of between 1 and 30 milliTorr, resulting the etching of vertical sidewalls in the oxide layer.
摘要翻译：一种用于蚀刻氧化物并具有对硅的高选择性的等离子体工艺，包括流入等离子体反应室中的含氟蚀刻气体，并将所述室内的暴露的硅表面的温度保持在200℃至300℃的温度蚀刻气体的实例包括SiF 4和碳氟化合物气体。等离子体可以由电容放电型等离子体发生器或电磁耦合等离子体发生器（诸如电感耦合等离子体发生器）产生。通过蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在1至30毫托之间的低压下进行蚀刻工艺，导致蚀刻氧化物层中的垂直侧壁。

34. 发明授权

US06352938B2 Method of removing photoresist and reducing native oxide in dual damascene copper process 有权
标题翻译：在双镶嵌铜工艺中去除光致抗蚀剂和还原天然氧化物的方法
公开(公告)号：US06352938B2
公开(公告)日：2002-03-05
申请号：US09457561
申请日：1999-12-09
申请人： Tong-Yu Chen , Hsi-Ta Chuang , Chan-Lon Yang
发明人： Tong-Yu Chen , Hsi-Ta Chuang , Chan-Lon Yang
IPC分类号： H01L21302
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/31138 , H01L21/76838 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L21/76879
摘要： A method of manufacturing metallic interconnects. A substrate has a copper line formed therein. An inter-metal dielectric layer is formed over the substrate and the copper line. A patterned photoresist layer is formed over the inter-metal dielectric layer. The inter-metal dielectric layer is etched to form a trench and a contact opening that exposes a portion of the copper line, wherein the contact opening is under the trench. At a low temperature and using a plasma derived from a gaseous mixture N2H2 (H2:4%)/O2, the photoresist layer is removed. Any copper oxide layer formed on the copper line in the process of removing photoresist material is reduced back to copper using gaseous N2H2 (H2:4%). A barrier layer conformal to the trench and the contact opening profile is formed. Copper is deposited to form a conformal first copper layer over the trench and the contact opening. Using the first copper layer as a seeding layer, a copper or a copperless electroplating is carried out so that a second copper layer is grown anisotropically over the first copper layer.
摘要翻译：一种制造金属互连的方法。基板上形成有铜线。在衬底和铜线之上形成金属间介电层。在金属间介电层上形成图案化的光致抗蚀剂层。蚀刻金属间电介质层以形成暴露铜线的一部分的沟槽和接触开口，其中接触开口在沟槽下方。在低温下并使用来自气态混合物N 2 H 2（H 2：4％）/ O 2）的等离子体，除去光致抗蚀剂层。在除去光致抗蚀剂材料的工艺中在铜线上形成的任何铜氧化物层都使用气态N 2 H 2（H 2：4％）还原成铜。形成与沟槽一致的阻挡层和形成接触开口轮廓。沉积铜以在沟槽和接触开口上形成共形的第一铜层。使用第一铜层作为接种层，进行铜或无铜电镀，使得第二铜层在第一铜层上各向异性地生长。

35. 发明授权

US06303482B1 Method for cleaning the surface of a semiconductor wafer 失效
标题翻译：清洁半导体晶片表面的方法
公开(公告)号：US06303482B1
公开(公告)日：2001-10-16
申请号：US09597762
申请日：2000-06-19
申请人： Chih-Ning Wu , Chan-Lon Yang
发明人： Chih-Ning Wu , Chan-Lon Yang
IPC分类号： H01L213205
CPC分类号： H01L21/02071 , H01L21/02052 , H01L21/31138 , H01L21/32137
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A plasma ashing process is performed on the surface of the semiconductor wafer. The plasma ashing process is performed in a chamber that contains oxygen and carbon tetrafluoride (CF4). An ozone-containing deionized (DI) water cleaning procedure, an amine-based solvent cleaning procedure and a fluoride-based solvent cleaning procedure are then performed to clean the surface of the semiconductor wafer without over-etching the silicon oxide of the street. Finally, an oxygen plasma cleaning process is performed to remove any residual photo-resist.
摘要翻译：公开了一种用于清洁半导体晶片表面的方法。在半导体晶片的表面上进行等离子体灰化处理。等离子体灰化过程在包含氧和四氟化碳（CF4）的室中进行。然后执行含臭氧的去离子水（DI）水清洗程序，胺基溶剂清洗程序和基于氟化物的溶剂清洗程序，以清洁半导体晶片的表面，而不会过度蚀刻街道的氧化硅。最后，进行氧等离子体清洁处理以除去任何残留的光刻胶。

36. 发明授权

US06218312B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06218312B1
公开(公告)日：2001-04-17
申请号：US08987509
申请日：1998-10-08
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

37. 发明授权

US6036877A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6036877A
公开(公告)日：2000-03-14
申请号：US648256
申请日：1996-05-13
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , C23C16/517 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32871 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

38. 发明授权

US5994233A Oxide etching method 有权
标题翻译：氧化物蚀刻法
公开(公告)号：US5994233A
公开(公告)日：1999-11-30
申请号：US172507
申请日：1998-10-14
申请人： Tong-Yu Chen , Chan-Lon Yang , Tsu-An Lin
发明人： Tong-Yu Chen , Chan-Lon Yang , Tsu-An Lin
IPC分类号： H01L21/311 , H01L21/00 , H01L21/3065
CPC分类号： H01L21/31116
摘要： An oxide etching method using low-medium density plasma includes a first etching step to pre-etch the oxide layer with low etching selectivity etchant to pre-form a contact opening and a monitoring opening. The low etching selectivity etchant can also etch the photoresist layer and the photoresist reaction residue. Then, a second etching with high etching selectivity on the oxide is performed to completely form the contact opening with a SAC property and the monitoring opening. The openings expose the substrate.
摘要翻译：使用低介质密度等离子体的氧化物蚀刻方法包括用低蚀刻选择性蚀刻剂预蚀刻氧化物层以预先形成接触开口和监测开口的第一蚀刻步骤。低蚀刻选择性蚀刻剂也可以蚀刻光致抗蚀剂层和光致抗蚀剂反应残余物。然后，执行对氧化物具有高蚀刻选择性的第二蚀刻，以完全形成具有SAC特性和监测开口的接触开口。开口露出基板。

39. 发明授权

US5888414A Plasma reactor and processes using RF inductive coupling and scavenger temperature control 失效
标题翻译：等离子体反应器和使用射频感应耦合和清除温度控制的工艺
公开(公告)号：US5888414A
公开(公告)日：1999-03-30
申请号：US936777
申请日：1997-09-24
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
IPC分类号： C23C16/517 , H01L21/311 , C23F1/00
CPC分类号： H01J37/32458 , C23C16/517 , H01J37/321 , H01J37/32165 , H01J37/32522 , H01J37/3266 , H01J37/32706 , H01L21/31116 , H01F2029/143
摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.
摘要翻译：等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

40. 发明授权

US5210466A VHF/UHF reactor system 失效
标题翻译： VHF / UHF反应堆系统
公开(公告)号：US5210466A
公开(公告)日：1993-05-11
申请号：US852826
申请日：1992-03-13
申请人： Kenneth S. Collins , Craig A. Roderick , Chan-Lon Yang , David N. K. Wang , Dan Maydan
发明人： Kenneth S. Collins , Craig A. Roderick , Chan-Lon Yang , David N. K. Wang , Dan Maydan
IPC分类号： C23C16/509 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32091 , H05H1/46 , H05K2201/10015 , H05K2201/10689
摘要： A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.
摘要翻译：公开了一种等离子体处理反应器，其包括整体的同轴传输线结构，其将低功率损耗，非常短的传输线耦合到等离子体室，因此允许有效地使用VHF / UHF频率来产生等离子体。在常规频率（如13.56 MHz）下，VHF / UHF频率在50-800兆赫兹范围内的使用提供了商业上可行的处理速率（分离和同步蚀刻和沉积）和皮套电压的显着降低。结果，减少了电敏感小型几何装置的损坏概率。

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