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31. 发明专利

FR2925978A1 PROCEDE ET DISPOSITIF DE SEPARATION D'UNE STRUCTURE. 未知
公开(公告)号：FR2925978A1
公开(公告)日：2009-07-03
申请号：FR0760437
申请日：2007-12-28
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： ZUSSY MARC , DI CIOCCIO LEA , MORALES CHRISTOPHE , MORICEAU HUBERT
IPC分类号： H01L21/304 , B28D5/04 , H01L21/461
摘要： L'invention concerne un procédé de séparation d'une structure comprenant une zone fragile délimitant dans cette structure deux sous-structures à séparer,selon lequel on fait avancer au moins une lame plane suivant une direction d'avance dans un plan de séparation correspondant à un plan moyen de la zone fragile, depuis un bord d'entrée de la structure en direction d'un bord de sortie de la structure, en sorte de provoquer une séparation progressive des deux sous-structures,le procédé étant caractérisé en ce qu'on fait varier l'inclinaison de la lame dans le plan de séparation vis-à vis de la direction d'avance.

32. 发明专利

FR2893750B1 未知
公开(公告)号：FR2893750B1
公开(公告)日：2008-03-14
申请号：FR0511798
申请日：2005-11-22
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： TEMPLIER FRANCOIS , MORICEAU HUBERT , MOUREY BRUNO , DI CIOCCIO LEA
IPC分类号： G09F9/30 , G02F1/1362 , G02F1/167 , H01L27/32

33. 发明专利

DE60210452T2 未知
公开(公告)号：DE60210452T2
公开(公告)日：2006-11-09
申请号：DE60210452
申请日：2002-06-20
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： FOURNEL FRANCK , ASPAR BERNARD , MORICEAU HUBERT
IPC分类号： C30B13/34 , H01L23/373 , C30B25/18 , C30B33/00 , C30B33/06 , G01B15/00 , H01L21/02 , H01L23/544
摘要： This invention relates to a process for controlling the orientation of secondary structures (A 1 , A 2 ) with at least a crystalline part during the transfer of secondary structures from a primary structure (A) on which the secondary structures have an initial crystalline orientation identical to the orientation of the primary structure, onto at least one support structure (B), the process comprising: a) the formation of at least one orientation mark (Va, Va 1 , Va 2 ) when the secondary structures are fixed to the primary structure (A), the mark having an arbitrary orientation with respect to the said initial crystalline orientation, but identical for each secondary structure, and b) when a set of secondary structures is transferred onto at least one support structure (B), an arrangement of the secondary structures so that their orientation marks can be oriented in a controlled manner.

34. 发明专利

FR2877091A1 PROCEDE ET DISPOSITIF DE MESURE DE L'ENERGIE D'ADHESION 未知
公开(公告)号：FR2877091A1
公开(公告)日：2006-04-28
申请号：FR0452442
申请日：2004-10-26
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： RIEUTORD FRANCOIS , MORICEAU HUBERT , BATAILLOU BENOIT
IPC分类号： G01N13/00 , B82B3/00 , G01N23/00
摘要： L'adhérence entre deux couches, en particulier deux couches minces d'un dispositif microélectronique, est une donnée importante. Il a été trouvé que le taux de fermeture de l'interface permettait de déterminer, de façon non destructrice, une mesure de l'énergie d'adhésion.Un procédé et un dispositif utilisant une grandeur caractéristique de ce taux sont décrits, en particulier utilisant la réflexion des rayons X à faible incidence et la densité électronique à l'interface.

35. 发明专利

FR2872625A1 ASSEMBLAGE PAR ADHESION MOLECULAIRE DE DEUX SUBSTRATS, L'UN AU MOINS SUPPORTANT UN FILM CONDUCTEUR ELECTRIQUE 未知
公开(公告)号：FR2872625A1
公开(公告)日：2006-01-06
申请号：FR0451376
申请日：2004-06-30
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： MORICEAU HUBERT , FEUILLET GUY , POCAS STEPHANE
IPC分类号： H01L21/30 , H01L21/18 , H01L21/98 , H01L25/065
摘要： L'invention concerne un procédé d'assemblage par adhésion moléculaire d'un premier substrat et d'un deuxième substrat selon des faces de contact, la face de contact du premier substrat présentant une couche d'un matériau électriquement conducteur sur au moins une partie de sa surface, le procédé comprenant les étapes suivantes :- dépôt d'une couche de liaison sur au moins une partie de la couche de matériau électriquement conducteur, ladite couche de liaison étant en un matériau apte à assurer une adhésion moléculaire avec une zone de la face de contact du deuxième substrat et apte à se combiner avec ledit matériau électriquement conducteur pour former un alliage conducteur,- mise en contact et collage par adhésion moléculaire de la couche de liaison du premier substrat avec la zone de la face de contact du deuxième substrat,- transformation de tout ou partie de la couche de liaison avec tout ou partie de la couche de matériau électriquement conducteur pour former un alliage conducteur.

36. 发明专利

FR2848336B1 未知
公开(公告)号：FR2848336B1
公开(公告)日：2005-10-28
申请号：FR0215550
申请日：2002-12-09
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： FOURNEL FRANCK , MORICEAU HUBERT , LAGAHE CHRYSTELLE
IPC分类号： H01L21/304 , H01L21/762
摘要： The method for making a complex structure by assembling two substrates (5,6) by linking two respective faces includes, prior to assembling, the creation of a difference in the states of tangential constraints between the two faces to assemble. The difference is chosen so to obtain in the assembled structure a state of predetermined constraint at the instant of dissociation, in particular to minimize the constraints at the level of the separation zone (5') at that instant. The two substrates (5,6) are curved so that the two faces to assemble are respectively convex and concave, in order to obtain the difference in tangential constraints. The two substrates are curved so that the faces are complementary, in particular spherically convex and spherically concave. The curvature of two substrates is obtained by the application of mechanical forces on each substrate, in a manner to create a pressure difference between the two faces of the substrates. The pressure difference is obtained by suction on a concave preform or inside a cavity, and a complementary convex preform. The second preform is with suction channels so that the substrate can be maintained curved when the first preform is lifted. The preform is a mould, a porous mould, or a deformable body. The assembling of the two substrates is by molecular bonding, and the two faces are treated to facilitate the bonding. The assembling of the two substrates is by direct contact, and the surfaces are adjusted so to avoid air trapping. At least one of the substrates is with an opening, in particular at its centre. At least one substrate comprises a channel opening up at the edge of the substrate. The assembling is carried out at a temperature above the ambient temperature, in particular by heating the substrates by contact with heated preforms, possibly at different temperatures. A method (claimed) for transferring a thin layer from a source substrate to a target substrate comprises the steps of ionic implantation through the face of the source substrate to create a fragility zone at a determined depth, assembling the source substrate and the target substrate to obtain the assembled structure, and the dissociation of the thin layer with the remaining source substrate at the level of fragility zone.

37. 发明专利

FR2855910B1 未知
公开(公告)号：FR2855910B1
公开(公告)日：2005-07-15
申请号：FR0350207
申请日：2003-06-06
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： MORICEAU HUBERT , LAGAHE CHRYSTELLE , BATAILLOU BENOIT
IPC分类号： H01L21/762 , H01L21/304 , H01L21/265
摘要： The production of a thin layer of a first material on a final substrate of a second material comprises: (a) fixing a thick layer of the first material on the final substrate along an interface; (b) implanting a gaseous species in the thick layer of first material to create a fragile zone delimiting, between the interface and the fragile zone, the thin layer; (c) depositing on the thick layer of first material a layer of a third material as a self-carrying layer; (d) fracturing the structure made up of the final substrate, the thick layer of first material and the layer of third material, at the level of the fragile zone to provide the substrate supporting the thin layer.

38. 发明专利

FR2823599B1 未知
公开(公告)号：FR2823599B1
公开(公告)日：2004-12-17
申请号：FR0105130
申请日：2001-04-13
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： ASPAR BERNARD , MORICEAU HUBERT , RAYSSAC OLIVIER , GHYSELEN BRUNO
IPC分类号： B81C99/00 , H01L21/02 , H01L21/762 , H01L27/12 , H01L23/32 , H01L21/30
摘要： The invention relates to a method for production of a detachable substrate, comprising a method step for the production of an interface by means of fixing, using molecular adhesion, one face of a layer on one face of a substrate, in which, before fixing, a treatment stage for at least one of said faces is provided, rendering the mechanical hold at the interface at such a controlled level to be compatible with a subsequent detachment.

39. 发明专利

FR2848337A1 Pre-stressed substrate manufacturing method for use in microelectronics involves bonding sequence of layers to meet pre-determined constraints 未知
公开(公告)号：FR2848337A1
公开(公告)日：2004-06-11
申请号：FR0215552
申请日：2002-12-09
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： FOURNEL FRANCK , MORICEAU HUBERT , MONTMAYEUL PHILIPPE
IPC分类号： H01L21/18 , H01L21/20 , H01L21/68 , H01L21/762 , H01L21/304
摘要： The method for making pre-stressed substrate by bonding structures (1,3) once the creation of a difference in the state of tangential constraints between the two faces to be assembled is achieved. The difference is chosen so to obtain a predetermined state of stress within the assembled structure in given conditions with respect to assembling conditions, in particular to reduce a jump in stresses at higher temperatures. The difference in the state of tangential constraints is obtained by curving or bending the two elementary structures to assemble, so to make the faces concave and convex, complementary, in particular spherically concave and spherically convex. The curvature of the two structures is obtained by the application of mechanical forces, in particular by deforming the two structures (1,3) between two preforms (2,4) of profiles chosen as a function of the two faces to assemble. The application of mechanical forces results in the creation of a pressure difference between the two faces, where the pressure difference is obtained by suction on a concave preform (2) or inside a cavity with a peripheral joint. The preform (2) is with a suction channel (5) for maintaining the structure (1) curved even when the preform (4) is lifted. The preform is a mould, a porous mould, or a deformable membrane. The assembling of the two structures is by molecular bonding, and the faces to assemble are treated to facilitate the bonding. The assembling of the two structures is by molecular bonding, and the faces to assemble are treated to facilitate the bonding. The assembling of substrates is by direct contact, and the substrates are adjusted so to avoid air trapping between the surfaces. At least one substrate is with an opening, which is at its center. At least one substrate comprises a channel opening up at the substrate edge. The assembling is implemented by a layer of material which becomes fluid at a higher temperature. The assembling is carried out at a temperature higher than the ambient temperature, and the substrates are heated by contact with heated preforms, possibly at different temperatures. The method includes a technological step of changing the temperature, and the difference in the state of tangential constraints is chosen so that the stresses inside the assembled structure remain below a predetermined threshold. The method also includes, after assembling the two structures, a step of thinning one of the structures, and the thin film can be assembled with another elementary structure. The method includes a step of epitaxial growth to obtain an epitaxial film on the external face of the complex structure. The lattice parameter of the thin film is chosen compatible with the epitaxial growth of additional material.

40. 发明专利

FR2848336A1 Method for making a constrained structure designed to be dissociated at the level of separation zone in order to minimize the jump of constraints at dissociation 未知
公开(公告)号：FR2848336A1
公开(公告)日：2004-06-11
申请号：FR0215550
申请日：2002-12-09
申请人： COMMISSARIAT ENERGIE ATOMIQUE
发明人： FOURNEL FRANCK , MORICEAU HUBERT , LAGAHE CHRYSTELLE
IPC分类号： H01L21/304 , H01L21/762
摘要： The method for making a complex structure by assembling two substrates (5,6) by linking two respective faces includes, prior to assembling, the creation of a difference in the states of tangential constraints between the two faces to assemble. The difference is chosen so to obtain in the assembled structure a state of predetermined constraint at the instant of dissociation, in particular to minimize the constraints at the level of the separation zone (5') at that instant. The two substrates (5,6) are curved so that the two faces to assemble are respectively convex and concave, in order to obtain the difference in tangential constraints. The two substrates are curved so that the faces are complementary, in particular spherically convex and spherically concave. The curvature of two substrates is obtained by the application of mechanical forces on each substrate, in a manner to create a pressure difference between the two faces of the substrates. The pressure difference is obtained by suction on a concave preform or inside a cavity, and a complementary convex preform. The second preform is with suction channels so that the substrate can be maintained curved when the first preform is lifted. The preform is a mould, a porous mould, or a deformable body. The assembling of the two substrates is by molecular bonding, and the two faces are treated to facilitate the bonding. The assembling of the two substrates is by direct contact, and the surfaces are adjusted so to avoid air trapping. At least one of the substrates is with an opening, in particular at its centre. At least one substrate comprises a channel opening up at the edge of the substrate. The assembling is carried out at a temperature above the ambient temperature, in particular by heating the substrates by contact with heated preforms, possibly at different temperatures. A method (claimed) for transferring a thin layer from a source substrate to a target substrate comprises the steps of ionic implantation through the face of the source substrate to create a fragility zone at a determined depth, assembling the source substrate and the target substrate to obtain the assembled structure, and the dissociation of the thin layer with the remaining source substrate at the level of fragility zone.

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