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31. 发明授权

US06335152B1 Use of RTA furnace for photoresist baking 有权
标题翻译：使用RTA炉进行光刻胶烘烤
公开(公告)号：US06335152B1
公开(公告)日：2002-01-01
申请号：US09564408
申请日：2000-05-01
申请人： Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
发明人： Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
IPC分类号： G03F738
CPC分类号： G03F7/38
摘要： In one embodiment, the present invention relates to a method of processing an irradiated photoresist involving the steps of placing a substrate having the irradiated photoresist thereon at a first temperature in a rapid thermal anneal furnace; heating the substrate having the irradiated photoresist thereon to a second temperature within about 0.1 seconds to about 10 seconds; cooling the substrate having the irradiated photoresist thereon to a third temperature in a rapid thermal annealing furnace within about 0.1 seconds to about 10 seconds; and developing the irradiated photoresist, wherein the second temperature is higher than the first temperature and the third temperature. In another embodiment, the present invention relates to a system of processing a photoresist, containing a source of actinic radiation and a mask for selectively irradiating a photoresist; a rapid thermal annealing furnace for rapidly heating and rapidly cooling a selectively irradiated photoresist, wherein the rapid heating and rapid cooling are independently conducted within about 0.1 seconds to about 10 seconds; and a developer for developing a rapid thermal annealing furnace heated and selectively irradiated photoresist into a patterned photoresist.
摘要翻译：在一个实施方案中，本发明涉及一种处理被照射的光致抗蚀剂的方法，包括以下步骤：在快速热退火炉中将具有照射光致抗蚀剂的基底在第一温度下放置; 将其上具有照射的光致抗蚀剂的基板加热至约0.1秒至约10秒的第二温度; 将快速热退火炉中具有照射光致抗蚀剂的基板冷却至约0.1秒至约10秒的第三温度; 并且显影所述被照射的光致抗蚀剂，其中所述第二温度高于所述第一温度和所述第三温度。在另一个实施方案中，本发明涉及一种处理含有光化辐射源的光致抗蚀剂的系统和用于选择性地照射光致抗蚀剂的掩模; 快速热退火炉，用于快速加热和快速冷却选择性照射的光致抗蚀剂，其中快速加热和快速冷却在约0.1秒至约10秒内独立进行; 以及用于将快速热退火炉加热并选择性地照射光致抗蚀剂的显影剂加工成图案化的光致抗蚀剂。

32. 发明授权

US06322009B1 Common nozzle for resist development 有权
标题翻译：普通喷嘴用于抗蚀剂开发
公开(公告)号：US06322009B1
公开(公告)日：2001-11-27
申请号：US09429992
申请日：1999-10-29
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh
IPC分类号： B05B900
CPC分类号： H01L21/6708 , H01L21/67051
摘要： A combination nozzle for applying a developer material and a washing solution material at different time intervals to a photoresist material layer disposed on a wafer is provided. The combination nozzle includes a number of developer nozzle tips connected to a developer supply line and a number of washing solution nozzle tips connected to a washing solution supply line. The developer supply line and the washing solution supply line ensure that the developer material and the washing solution material are always substantially isolated from one another. Furthermore, the developer nozzle tips and the washing solution nozzle tips are arranged so that developer material and washing solution material do not come into contact with one another. The volume of the material and the volume flow of the material can be controlled by electronically controlled valves.
摘要翻译：提供了用于将显影剂材料和洗涤液材料以不同的时间间隔施加到设置在晶片上的光致抗蚀剂材料层的组合喷嘴。组合喷嘴包括连接到显影剂供应管线的多个显影剂喷嘴尖端和连接到洗涤溶液供应管线的多个洗涤溶液喷嘴尖端。显影剂供应管线和洗涤溶液供应管线确保显影剂材料和洗涤液材料总是基本上彼此隔离。此外，显影剂喷嘴尖端和洗涤溶液喷嘴尖端被布置成使得显影剂材料和洗涤液材料彼此不接触。材料的体积和材料的体积流量可以通过电子控制阀来控制。

33. 发明授权

US07251033B1 In-situ reticle contamination detection system at exposure wavelength 有权
标题翻译：曝光波长处原位标线污染检测系统
公开(公告)号：US07251033B1
公开(公告)日：2007-07-31
申请号：US10858757
申请日：2004-06-02
申请人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01N21/00
CPC分类号： G01N21/94 , G01N2021/95676 , G03F1/84 , G03F7/70916
摘要： A system and method are provided for detecting contaminants or defects on a reticle in-situ. The system and method provide a system that measures the optical transmission through clear areas on a reticle and determines whether the optical transmission of a reticle has been degraded by contaminants or other defects.
摘要翻译：提供了一种系统和方法来现场检测标线上的污染物或缺陷。该系统和方法提供一种系统，其通过掩模版上的清晰区域测量光学透射，并确定掩模版的光学传输是否已被污染物或其他缺陷降解。

34. 发明授权

US07084988B1 System and method for creation of semiconductor multi-sloped features 失效
标题翻译：用于创建半导体多倾斜特征的系统和方法
公开(公告)号：US07084988B1
公开(公告)日：2006-08-01
申请号：US09893803
申请日：2001-06-28
申请人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G01B11/24
CPC分类号： H01L22/26
摘要： A system and method for monitoring the creation of semiconductor features with multi-slope profiles by employing scatterometry is provided. The system includes a wafer partitioned into one or more portions and one or more light sources, each light source directing light to one or more devices etched on a wafer, the devices having multi-sloped profiles. Reflected light is collected and converted into data by a measuring system. The data is indicative of the etching at the one or more portions of the wafer. The measuring system provides the data to a process analyzer that determines whether adjustments to etching components are necessary by comparing the data to stored etch parameter values. The system also includes etching components. At least one etch component corresponds to a portion of the wafer and performs the etching thereof. The process analyzer selectively controls the etch components to promote consistent etching of multi-slope profiles/features to compensate for wafer to wafer variations.
摘要翻译：提供了一种通过采用散射法来监测具有多斜率分布的半导体特征的创建的系统和方法。该系统包括分为一个或多个部分和一个或多个光源的晶片，每个光源将光引导到在晶片上蚀刻的一个或多个器件，该器件具有多倾斜轮廓。反射光被测量系统收集并转换成数据。数据表示在晶片的一个或多个部分处的蚀刻。测量系统将数据提供给过程分析仪，通过将数据与存储的蚀刻参数值进行比较来确定是否需要对蚀刻部件进行调整。该系统还包括蚀刻部件。至少一个蚀刻部件对应于晶片的一部分并执行其蚀刻。过程分析器选择性地控制蚀刻部件以促进多斜率分布/特征的一致蚀刻以补偿晶片到晶片的变化。

35. 发明授权

US06879406B1 Use of scatterometry as a control tool in the manufacture of extreme UV masks 失效
标题翻译：使用散射测量作为制造极端紫外线掩模的控制工具
公开(公告)号：US06879406B1
公开(公告)日：2005-04-12
申请号：US10677041
申请日：2003-10-01
申请人： Bharath Rangarajan , Ramkumar Subramanian , Bhanwar Singh
发明人： Bharath Rangarajan , Ramkumar Subramanian , Bhanwar Singh
IPC分类号： G01B11/24 , G03F1/00 , G03F1/14
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84
摘要： One aspect of the present invention relates to a system and method for controlling an EUV mask fabrication process using a scatterometer. The system includes an EUV mask fabrication system comprising a translucent substrate having one or more layers of reflective material formed thereon and a patterned photoresist layer as the uppermost layer, a mask inspection system operatively connected to the mask fabrication system for examining the layers as they are being etched and developed by the mask fabrication system and generating data related thereto, and an EUV mask fabrication control system coupled to the mask inspection system for receiving data from the inspection system in order to regulate the mask fabrication system to facilitate obtaining desired critical dimensions. The method involves monitoring the etching of the features, generating data related to the features, and relaying the data to a control system to optimize the EUV mask fabrication process.
摘要翻译：本发明的一个方面涉及使用散射仪控制EUV掩模制造工艺的系统和方法。该系统包括EUV掩模制造系统，该系统包括其上形成有一层或多层反射材料的半透明基材和作为最上层的图案化光致抗蚀剂层，与该掩模制造系统可操作地连接的掩模检查系统，以便像它们一样检查这些层由掩模制造系统蚀刻和显影并产生与之相关的数据，以及耦合到掩模检查系统的EUV掩模制造控制系统，用于从检查系统接收数据，以便调节掩模制造系统以便于获得期望的临界尺寸。该方法包括监测特征的蚀刻，产生与特征有关的数据，以及将数据中继到控制系统以优化EUV掩模制造工艺。

36. 发明授权

US06844206B1 Refractive index system monitor and control for immersion lithography 失效
$Refractive index system monitor and control for immersion lithography$
标题翻译：折射率系统监测和控制浸没光刻
公开(公告)号：US06844206B1
公开(公告)日：2005-01-18
申请号：US10645363
申请日：2003-08-21
申请人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G03F7/20 , H01L21/00 , G03C5/00
CPC分类号： G03F7/70341
摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。已知的光栅结构被构建在衬底上。折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

37. 发明授权

US06813574B1 Topographically aligned layers and method for adjusting the relative alignment of layers and apparatus therefor 有权
标题翻译：用于调整层的相对对准的方法和用于其的设备的方法
公开(公告)号：US06813574B1
公开(公告)日：2004-11-02
申请号：US09992599
申请日：2001-11-06
申请人： Sanjay K. Yedur , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Sanjay K. Yedur , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01N2186
CPC分类号： H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Patterned layers in an integrated circuit (IC) or other device are aligned in conjunction with the detection of the topology of the layers. The topology can be used to determine the location of a metrology mark and/or to compensate for a horizontal shift in the apparent location of the metrology mark. Precise detection of topography can be achieved without physical contact with the IC or other device with an atomic force microscope.
摘要翻译：集成电路（IC）或其他设备中的图案层与层的拓扑结构的检测结合对齐。拓扑结构可用于确定计量标记的位置和/或补偿计量标记的表观位置的水平位移。无需使用原子力显微镜与IC或其他器件物理接触即可实现精确的形貌检测。

38. 发明授权

US06808591B1 Model based metal overetch control 有权
标题翻译：基于型号的金属防腐控制
公开(公告)号：US06808591B1
公开(公告)日：2004-10-26
申请号：US10021531
申请日：2001-12-12
申请人： Khoi A. Phan , Bharath Rangarajan , Christopher F. Lyons , Steven C. Avanzino , Ramkumar Subramanian , Bhanwar Singh , Cyrus E. Tabery
发明人： Khoi A. Phan , Bharath Rangarajan , Christopher F. Lyons , Steven C. Avanzino , Ramkumar Subramanian , Bhanwar Singh , Cyrus E. Tabery
IPC分类号： H01L21302
CPC分类号： H01L21/67253 , H01L21/32136
摘要： A systems and methodologies are provided for metal overetch control. Metal overetch processes are controlled by utilizing overetch device models to determine overetch times or overetch endpoints. The systems and methodologies reduce the need for manual testing and manual overetch characterization. An overetch system includes a metal etcher, a target device and an overetch controller. The target device is located in or on the metal etcher. The overetch controller is coupled to the metal etcher. The overetch controller controls overetching of the target device by the metal etcher. The overetch controller includes an overetch time controller, a set of etch control models and a control system.
摘要翻译：提供了用于金属过程控制的系统和方法。通过利用过滤设备模型来确定金属过蚀刻过程以确定过蚀刻时间或过程延伸端点。系统和方法减少了手动测试和手动过程表征的需要。一种过蚀系统包括金属蚀刻机，目标装置和过程控制器。目标设备位于金属蚀刻机中或其上。该过程控制器耦合到金属蚀刻器。过程控制器通过金属蚀刻器控制目标器件的过蚀刻。该过程控制器包括一个过时延时间控制器，一组蚀刻控制模型和一个控制系统。

39. 发明授权

US06758612B1 System and method for developer endpoint detection by reflectometry or scatterometry 有权
标题翻译：用于通过反射测量或散点测量进行开发人员端点检测的系统和方法
公开(公告)号：US06758612B1
公开(公告)日：2004-07-06
申请号：US10050471
申请日：2002-01-16
申请人： Cyrus E. Tabery , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Cyrus E. Tabery , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G03D500
CPC分类号： G03F7/3028
摘要： A system for regulating (e.g., terminating) a development process is provided. The system includes one or more light sources, each light source directing light to one or more patterns and/or gratings on a wafer. Light reflected from the patterns and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides development related data to a processor that determines the acceptability of the development of the respective portions of the wafer. The collected light may be analyzed by scatterometry and/or reflectometry systems to produce development related data and the development related data may be examined to determine whether a development process end point has been reached, at which time the system can control the development process and terminate development.
摘要翻译：提供了一种用于调节（例如，终止）显影过程的系统。该系统包括一个或多个光源，每个光源将光引导到晶片上的一个或多个图案和/或光栅。从图案和/或光栅反射的光被测量系统收集，该系统处理所收集的光。所收集的光指示在晶片的相应部分处获得的尺寸。该测量系统将开发相关数据提供给处理器，该处理器确定晶片各个部分的可接受性。所收集的光可以通过散射法和/或反射测量系统进行分析以产生开发相关数据，并且可以检查开发相关数据以确定是否已经达到开发过程终点，此时系统可以控制开发过程并终止发展。

40. 发明授权

US06641963B1 System and method for in situ control of post exposure bake time and temperature 失效
标题翻译：曝晒后烘烤时间和温度的现场控制系统和方法
公开(公告)号：US06641963B1
公开(公告)日：2003-11-04
申请号：US09845239
申请日：2001-04-30
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh , Ramkumar Subramanian
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G03F900
CPC分类号： G03F7/38 , G03B27/52
摘要： A system for regulating temperature of a post exposure baking process is provided. The system includes one or more light sources, each light source directing light to one or more gratings being baked and hardened on a wafer. Light reflected from the gratings is collected by a measuring system, which processes the collected light. Light passing through the gratings may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the baking and hardening of the respective portions of the wafer. The measuring system provides baking and hardening related data to a processor that determines the baking and hardening of the respective portions of the wafer. The system also includes a plurality of temperature controlling devices, each such device corresponds to a respective portion of the wafer and provides for the heating and/or cooling thereof. The processor selectively controls the temperature controlling devices so as to regulate temperature of the respective portions of the wafer.
摘要翻译：提供了一种用于调节后曝光烘烤处理温度的系统。该系统包括一个或多个光源，每个光源将光引导到在晶片上被烘烤和硬化的一个或多个光栅。从光栅反射的光被测量系统收集，该系统处理收集的光。通过光栅的光可以类似地由处理所收集的光的测量系统收集。所收集的光表示晶片的各个部分的烘烤和硬化。测量系统向处理器提供烘烤和硬化相关数据，该处理器确定晶片的相应部分的烘烤和硬化。该系统还包括多个温度控制装置，每个这样的装置对应于晶片的相应部分并提供其加热和/或冷却。处理器选择性地控制温度控制装置，以调节晶片各部分的温度。

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