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31. 发明授权

US08749009B2 Device components with surface-embedded additives and related manufacturing methods 有权
标题翻译：具有表面嵌入添加剂的器件组件及相关制造方法
公开(公告)号：US08749009B2
公开(公告)日：2014-06-10
申请号：US13205526
申请日：2011-08-08
申请人： Michael Eugene Young , Arjun Daniel Srinivas , Matthew R. Robinson , Alexander Chow Mittal
发明人： Michael Eugene Young , Arjun Daniel Srinivas , Matthew R. Robinson , Alexander Chow Mittal
IPC分类号： H01L31/00 , H01L31/048 , H01L31/0216
CPC分类号： H05K1/09 , H01L31/02167 , H01L31/0481 , H01L31/05 , H01L31/055 , H05K1/0274 , H05K1/0313 , H05K1/115 , H05K2201/0302 , H05K2201/0326 , H05K2201/0364 , H05K2201/10977 , Y02E10/52 , Y02E10/54 , Y02E10/542
摘要： Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.
摘要翻译：活性或功能添加剂嵌入主体材料的表面，用作各种电子或光电子器件中的组件，包括太阳能装置，智能窗户，显示器等。所得到的表面嵌入式设备组件提供了改进的性能，以及由其组成和制造过程产生的成本优势。

32. 发明授权

US08466366B2 Transparent conductors incorporating additives and related manufacturing methods 有权
标题翻译：掺有添加剂的透明导体及相关制造方法
公开(公告)号：US08466366B2
公开(公告)日：2013-06-18
申请号：US13536968
申请日：2012-06-28
申请人： Arjun Daniel Srinivas , Matthew R. Robinson , Michael Eugene Young
发明人： Arjun Daniel Srinivas , Matthew R. Robinson , Michael Eugene Young
IPC分类号： H01B5/00
CPC分类号： H01B1/02 , G02F1/13439 , G06F3/044 , G06F3/045 , H01B13/30 , H01L51/0021 , H01L51/5206 , H01L2251/5369
摘要： A transparent conductor includes a film of a conductive ceramic. Additives are at least partially incorporated into the film. The additives are at least one of electrically conductive and semiconducting, and at least one of the additives has an aspect ratio of at least 3.
摘要翻译：透明导体包括导电陶瓷膜。添加剂至少部分地并入到膜中。添加剂是导电和半导体中的至少一种，并且至少一种添加剂具有至少3的纵横比。

33. 发明申请

US20130034932A1 Thin-Film Devices Formed From Solid Group IIIA Particles 审中-公开
标题翻译：由固体IIIA族颗粒形成的薄膜器件
公开(公告)号：US20130034932A1
公开(公告)日：2013-02-07
申请号：US13571685
申请日：2012-08-10
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K.J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K.J. Van Duren
IPC分类号： H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料在该温度范围内为液体。另一种材料可以是IA族材料。可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

34. 发明申请

US20110114182A1 THIN-FILM DEVICES FORMED FROM SOLID GROUP IIIA PARTICLES 审中-公开
标题翻译：从固体IIIA颗粒形成的薄膜装置
公开(公告)号：US20110114182A1
公开(公告)日：2011-05-19
申请号：US12776353
申请日：2010-05-07
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料在该温度范围内为液体。另一种材料可以是IA族材料。可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

35. 发明申请

US20110092010A1 HIGH-THROUGHPUT PRINTING OF NANOSTRUCTURED SEMICONDUCTOR PRECURSOR LAYER 审中-公开
标题翻译：纳米结构半导体前驱层的高通量印刷
公开(公告)号：US20110092010A1
公开(公告)日：2011-04-21
申请号：US12757942
申请日：2010-04-09
申请人： Jeroen K. J. Van Duren , Matthew R. Robinson , Craig Leidholm
发明人： Jeroen K. J. Van Duren , Matthew R. Robinson , Craig Leidholm
IPC分类号： H01L31/18 , C23C16/44 , C23C16/458
CPC分类号： B22F9/04 , B22F1/0055 , B22F2009/041 , B22F2999/00 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1229 , C23C18/1241 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C24/10 , C23C26/00 , C23C26/02 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549 , Y02P70/521 , B22F2202/03
摘要： Materials and devices are provided for high-throughput printing of nanostructured semiconductor precursor layer. In one embodiment, a material is provided that comprises of a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA. The microflakes may be created by milling precursor particles characterized by a precursor composition that provides sufficient malleability to form a planar shape from a non-planar starting shape when milled, and wherein overall amounts of elements from Groups IB, IIIA and/or VIA contained in the precursor particles combined are at a desired stoichiometric ratio of the elements. It should also be understood that other flakes such as but not limited to nanoflakes may also be used to form the precursor material.
摘要翻译：提供材料和器件用于纳米结构半导体前体层的高通量打印。在一个实施方案中，提供了由多个微花瓣组成的材料，其具有含有IB，IIIA和/或VIA组中至少一种元素的材料组成。微花纹可以通过研磨特征在于前体组合物的前体颗粒来产生，前体组合物在研磨时提供足够的可延展性以从非平面起始形状形成平面形状，并且其中来自IB，IIIA和/或VIA组中的元素总量组合的前体颗粒具有所需元素的化学计量比。还应当理解，也可以使用其它片，例如但不限于纳米片，以形成前体材料。

36. 发明申请

US20100291758A1 Thin-Film Devices Formed From Solid Particles 有权
标题翻译：固体颗粒形成的薄膜器件
公开(公告)号：US20100291758A1
公开(公告)日：2010-11-18
申请号：US12304683
申请日：2007-06-12
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K.J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K.J. Van Duren
IPC分类号： H01L21/18 , C09D1/00
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料在该温度范围内为液体。另一种材料可以是IA族材料。可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

37. 发明申请

US20100170564A1 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER BY USE OF CHALCOGEN-RICH CHALCOGENIDES 审中-公开
标题翻译：通过使用CHALCOGEN-CHICH CHALCOGENIDES的半导体前驱体层的高通量印刷
公开(公告)号：US20100170564A1
公开(公告)日：2010-07-08
申请号：US12553951
申请日：2009-09-03
申请人： Jeroen K. J. Van Duren , Matthew R. Robinson , Craig Leidholm
发明人： Jeroen K. J. Van Duren , Matthew R. Robinson , Craig Leidholm
IPC分类号： H01L31/0216 , H01L31/02 , H01L31/0328 , H01L31/0272 , H01L31/032
CPC分类号： H01L31/18 , B22F1/0055 , B22F9/04 , B22F2001/0033 , B22F2998/00 , B22F2999/00 , C23C18/1204 , C23C18/1279 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/1876 , Y02E10/541 , Y02P70/521 , B22F1/0022 , B22F2202/03
摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film.
摘要翻译：公开了一种通过使用富含硫属元素的硫族化合物形成半导体前体层的高通量方法。该方法包括形成包含IB-硫族化物和/或IIIA-硫族化物颗粒的前体材料，其中颗粒中的硫族元素的总量相对于由前体产生的IB-IIIA族硫族化物膜中的总硫属元素的总量材料的比例在前体材料中提供过量的硫族元素。过量的硫族元素呈现液体形式并用作助熔剂以改善元素的混合以形成所需化学计量比的IB-IIIA族硫族化合物膜，其中前体材料中过量的硫族元素的量大于或等于在IB-IIIA-硫族化物膜中发现的化学计量。

38. 发明授权

US08727112B2 Agglomerate reduction in a nanowire suspension stored in a container 有权
标题翻译：储存在容器中的纳米线悬浮液中的聚集体还原
公开(公告)号：US08727112B2
公开(公告)日：2014-05-20
申请号：US13921086
申请日：2013-06-18
申请人： Michael Eugene Young , Arjun Daniel Srinivas , Matthew R. Robinson
发明人： Michael Eugene Young , Arjun Daniel Srinivas , Matthew R. Robinson
IPC分类号： B82B3/00 , B65D85/00 , B65D81/24
CPC分类号： B65D81/22 , B65B3/04 , B65B5/00 , B65D23/02 , B65D85/70 , B82Y30/00
摘要： Methods and articles of manufacture for storage and shipping of nanowires are disclosed. One disclosed method includes: (a) providing a nanowire suspension including nanowires suspended in a liquid; and (b) disposing the nanowire suspension in a container for storage and shipping, where the container is configured to inhibit agglomeration of nanowires from the nanowire suspension.
摘要翻译：公开了用于存储和运输纳米线的方法和制品。一种公开的方法包括：（a）提供包含悬浮在液体中的纳米线的纳米线悬浮液; 和（b）将纳米线悬浮液设置在用于储存和运输的容器中，其中容器被配置为抑制纳米线从纳米线悬浮液的聚集。

39. 发明申请

US20130334075A1 AGGLOMERATE REDUCTION IN A NANOWIRE SUSPENSION STORED IN A CONTAINER 有权
标题翻译：在集装箱中存储的纳米悬架中减少
公开(公告)号：US20130334075A1
公开(公告)日：2013-12-19
申请号：US13921086
申请日：2013-06-18
申请人： Michael Eugene Young , Arjun Daniel Srinivas , Matthew R. Robinson
发明人： Michael Eugene Young , Arjun Daniel Srinivas , Matthew R. Robinson
IPC分类号： B65D85/00 , B65D81/22
CPC分类号： B65D81/22 , B65B3/04 , B65B5/00 , B65D23/02 , B65D85/70 , B82Y30/00
摘要： Methods and articles of manufacture for storage and shipping of nanowires are disclosed. One disclosed method includes: (a) providing a nanowire suspension including nanowires suspended in a liquid; and (b) disposing the nanowire suspension in a container for storage and shipping, where the container is configured to inhibit agglomeration of nanowires from the nanowire suspension.
摘要翻译：公开了用于存储和运输纳米线的方法和制品。一种公开的方法包括：（a）提供包含悬浮在液体中的纳米线的纳米线悬浮液; 和（b）将纳米线悬浮液设置在用于储存和运输的容器中，其中容器被配置为抑制纳米线从纳米线悬浮液的聚集。

40. 发明申请

US20120322197A1 Solid Group IIIA Particles Formed Via Quenching 审中-公开
标题翻译：通过淬火形成的固体IIIA族颗粒
公开(公告)号：US20120322197A1
公开(公告)日：2012-12-20
申请号：US13470287
申请日：2012-05-12
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
IPC分类号： H01L31/0264
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a process for forming solid particles is provided. The method includes providing a first suspension of solid and/or liquid particles containing at least one group IIIA element. A material may be added to substantially increase the melting point of at least one set of group IIIA-containing particles in the suspension into higher-melting solid particles comprising an alloy of the group IIIA element and at least a part of the added material. The suspension may be deposited onto a substrate to form a precursor layer on the substrate and the precursor layer is reacted in a suitable atmosphere to form a film.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在一个实施方案中，提供了形成固体颗粒的方法。该方法包括提供含有至少一种IIIA族元素的固体和/或液体颗粒的第一悬浮液。可以加入材料以将悬浮液中至少一组含IIIA族颗粒的熔点大大增加到包含IIIA族元素和至少一部分添加材料的合金的更高熔点固体颗粒中。悬浮液可以沉积在基底上以在基底上形成前体层，并且前体层在合适的气氛中反应以形成膜。

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