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31. 发明授权

US08707999B2 Method for fabricating solid body having superhydrophobic surface structure and superhydrophobic tube using the same method 有权
标题翻译：使用相同的方法制造具有超疏水表面结构的固体的超疏水管的方法
公开(公告)号：US08707999B2
公开(公告)日：2014-04-29
申请号：US12442321
申请日：2007-09-19
申请人： Dong-Hyun Kim , Sang-Min Lee , Il-Sin Bae , Dong-Seob Kim , Duk-Hyun Choi , Chang-Woo Lee , Ji-Hoon Jeon , Seong-Ho Son , Tae-Chul Moon , Woon-Bong Hwang , Joon-Won Kim , Hyun-Chul Park , Kun-Hong Lee
发明人： Dong-Hyun Kim , Sang-Min Lee , Il-Sin Bae , Dong-Seob Kim , Duk-Hyun Choi , Chang-Woo Lee , Ji-Hoon Jeon , Seong-Ho Son , Tae-Chul Moon , Woon-Bong Hwang , Joon-Won Kim , Hyun-Chul Park , Kun-Hong Lee
IPC分类号： F15D1/02
CPC分类号： B29C33/52
摘要： The present invention relates to a method for manufacturing a solid body having a superhydrophobic surface structure formed by using a surface treatment of a metal body, a replication process, and a polymer sticking phenomenon to increase efficiency of fluid transfer and prevent foreign materials from being accumulated in the tube, and a superhydrophobic fluid transfer tube using the method. The superhydrophobic fluid transfer tube includes a fluid guider and a solid body provided on a fluid contact surface of the fluid guider and has micrometer-scaled unevenness and nanometer-scaled protrusions. In the method, a plurality of nanometer-scaled holes are formed on a surface of a metal body through an anodizing process, a replica is formed by immersing the metal body provided with the nanometer-scaled holes in a non-wetting polymer material and solidifying the non-wetting polymer material, the solid body having the superhydrophobic surface is formed by removing the metal body and an anode oxide from the replica, and the solid body is provided to a fluid contact surface of a fluid guider for guiding a fluid.
摘要翻译：本发明涉及通过使用金属体的表面处理形成的具有超疏水性表面结构的固体的制造方法，复制工序和聚合物粘贴现象，以提高流体转移的效率，防止异物的累积在管中，以及使用该方法的超疏水流体输送管。超疏水流体输送管包括流体引导器和设置在流体引导器的流体接触表面上的实心体，并且具有微米级的凹凸和纳米级的突起。在该方法中，通过阳极氧化处理在金属体的表面上形成多个纳米级的孔，通过将设置有纳米级孔的金属体浸渍在非湿润性聚合物材料中并固化而形成复制品通过从复制品中除去金属体和阳极氧化物形成具有超疏水表面的固体，并且将固体提供到用于引导流体的流体导向器的流体接触表面。

32. 发明申请

US20140027025A1 WIRE ROD HAVING GOOD SUPERIOR SURFACE PROPERTIES, HIGH STRENGTH, AND HIGH TOUGHNESS, AND A METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有良好的超级表面特性，高强度和高韧性的线材及其制造方法
公开(公告)号：US20140027025A1
公开(公告)日：2014-01-30
申请号：US14110924
申请日：2012-05-11
申请人： Dong-Hyun Kim , You-Hwan Lee , Hyung-Keun Cho
发明人： Dong-Hyun Kim , You-Hwan Lee , Hyung-Keun Cho
IPC分类号： C21D8/06 , C22C38/02 , C22C38/04 , C22C38/60
CPC分类号： C21D8/065 , C21D9/525 , C21D2211/005 , C21D2211/009 , C22C38/00 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/60
摘要： Provided is a wire rod having high strength and high toughness, which suppresses the generation of surface oxide and has superior surface properties through uniform oxide formation, and to a method for manufacturing same. For this purpose, a wire rod comprising 0.005˜ to 0.02 wt. % of Sb, having superior surface properties, high strength and high toughness, and a method for manufacturing same are provided.
摘要翻译：提供一种具有高强度和高韧性的线材，其通过均匀的氧化物形成抑制了表面氧化物的产生并具有优异的表面性能及其制造方法。为此，将包含0.005〜0.02重量％提供具有优异的表面性能，高强度和高韧性的Sb的％，及其制造方法。

33. 发明授权

US08394283B2 Manufacturing method of 3D shape structure having hydrophobic external surface 有权
标题翻译：具有疏水性外表面的3D形状结构的制造方法
公开(公告)号：US08394283B2
公开(公告)日：2013-03-12
申请号：US12741058
申请日：2008-03-12
申请人： Dong-Seob Kim , Sang-Min Lee , Woon-Bong Hwang , Kun-Hong Lee , Geun-Bae Lim , Joon-Won Kim , Dong-Hyun Kim , Hyun-Chul Park
发明人： Dong-Seob Kim , Sang-Min Lee , Woon-Bong Hwang , Kun-Hong Lee , Geun-Bae Lim , Joon-Won Kim , Dong-Hyun Kim , Hyun-Chul Park
IPC分类号： B31D3/00
CPC分类号： C23F1/00 , C25D1/08 , C25D11/005 , C25D11/02
摘要： The present invention relates to a three-dimensional structure manufacturing method for performing surface treatment processes, and a replication step to provide hydrophobicity on an external surface of the three-dimensional structure. In the manufacturing method, the hydrophobicity may be provided to the external surface of the three-dimensional structure, a high cost device required in the conventional MEMS process is not used, the manufacturing cost is reduced, and the manufacturing process is simplified. In addition, it has been difficult to provide the hydrophobicity on an external surface of a three-dimensional structure having a large surface due to a spatial limitation, but in the exemplary embodiment of the present invention, the hydrophobicity may be provided to the external surface of the three-dimensional structure having a large surface, such as a torpedo, a submarine, a ship, and a vehicle, without the spatial limitation.
摘要翻译：本发明涉及一种用于进行表面处理工艺的三维结构制造方法以及在三维结构的外表面上提供疏水性的复制步骤。在制造方法中，可以将疏水性提供给三维结构的外表面，不使用常规MEMS工艺中所需的高成本装置，制造成本降低，制造工艺简化。此外，由于空间限制，难以在具有大表面的三维结构的外表面上提供疏水性，但是在本发明的示例性实施方案中，可以将疏水性提供给外表面的具有大表面的三维结构，例如鱼雷，潜艇，船舶和车辆，没有空间限制。

34. 发明申请

US20110318664A1 FUEL CELL SYSTEM AND DRIVING METHOD FOR THE SAME 有权
标题翻译：燃料电池系统及其驱动方法
公开(公告)号：US20110318664A1
公开(公告)日：2011-12-29
申请号：US12983503
申请日：2011-01-03
申请人： Hyun Kim , Dong-Rak Kim , Dong-Hyun Kim , Ming-Zi Hong , Woong-Ho Cho
发明人： Hyun Kim , Dong-Rak Kim , Dong-Hyun Kim , Ming-Zi Hong , Woong-Ho Cho
IPC分类号： H01M8/04
CPC分类号： H01M8/04753 , Y02E60/50
摘要： A fuel cell system including a fuel cell stack having a plurality of unit cells is provided. A method of driving the fuel cell stack is also provided. The method may include supplying a fuel to a fuel cell stack, supplying an oxidizer to the fuel cell stack, controlling supply of the fuel and the oxidizer to operate the fuel cell stack, calculating a total operation time of the fuel cell, and/or varying a stack activation period in which the oxidizer is blocked to the fuel cell stack according to the total operation time and a stack activation cycle of which the stack activation period is generated.
摘要翻译：提供一种燃料电池系统，其包括具有多个单电池的燃料电池堆。还提供了驱动燃料电池堆的方法。该方法可以包括向燃料电池堆供应燃料，向燃料电池堆供应氧化剂，控制燃料和氧化剂的供应以操作燃料电池堆，计算燃料电池的总运行时间和/或根据总操作时间和产生堆栈激活周期的堆栈激活周期，改变其中氧化剂被阻挡到燃料电池堆的堆活化时段。

35. 发明授权

US07727893B2 Method of forming a dielectric layer pattern and method of manufacturing a non-volatile memory device using the same 失效
标题翻译：形成电介质层图案的方法和使用其制造非易失性存储器件的方法
公开(公告)号：US07727893B2
公开(公告)日：2010-06-01
申请号：US12336863
申请日：2008-12-17
申请人： Jae-Ho Min , Dong-Hyun Kim
发明人： Jae-Ho Min , Dong-Hyun Kim
IPC分类号： H01L21/311
CPC分类号： H01L27/115 , H01L21/31105 , H01L21/31116 , H01L21/31122 , H01L27/11521
摘要： In a method of forming a dielectric layer pattern, lower patterns are formed on a substrate. A first dielectric layer is formed on sidewalls and upper surfaces of the lower patterns and a surface of the substrate. A mask pattern is formed on the first dielectric layer to partially expose the first dielectric layer. The exposed first dielectric layer on upper surfaces and upper sidewalls of the lower patterns is partially removed and the removed first dielectric layer is deposited on surfaces of the first dielectric layer between the lower patterns, to form a second dielectric layer having a thickness greater than that of the first dielectric layer. The second dielectric layer on the sidewalls of the lower patterns and the substrate is etched to form a dielectric layer pattern. Accordingly, damage to the underlying layer may be reduced, and an unnecessary dielectric layer may be completely removed.
摘要翻译：在形成电介质层图案的方法中，在基板上形成下图案。第一电介质层形成在下图案的侧壁和上表面以及基板的表面上。在第一电介质层上形成掩模图案以部分地暴露第一介电层。部分地去除在下图案的上表面和上侧壁上的暴露的第一电介质层，并且将去除的第一介电层沉积在下图案之间的第一介电层的表面上，以形成厚度大于其的厚度的第二电介质层。的第一介电层。在下图案和衬底的侧壁上的第二电介质层被蚀刻以形成电介质层图案。因此，可能减少对下层的损伤，并且可以完全去除不需要的介电层。

36. 发明申请

US20090155968A1 METHOD OF FORMING A DIELECTRIC LAYER PATTERN AND METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE USING THE SAME 失效
标题翻译：形成介质层图案的方法和使用其制造非易失性存储器件的方法
公开(公告)号：US20090155968A1
公开(公告)日：2009-06-18
申请号：US12336863
申请日：2008-12-17
申请人： Jae-Ho Min , Dong-Hyun Kim
发明人： Jae-Ho Min , Dong-Hyun Kim
IPC分类号： H01L21/336 , H01L21/311
CPC分类号： H01L27/115 , H01L21/31105 , H01L21/31116 , H01L21/31122 , H01L27/11521
摘要： In a method of forming a dielectric layer pattern, lower patterns are formed on a substrate. A first dielectric layer is formed on sidewalls and upper surfaces of the lower patterns and a surface of the substrate. A mask pattern is formed on the first dielectric layer to partially expose the first dielectric layer. The exposed first dielectric layer on upper surfaces and upper sidewalls of the lower patterns is partially removed and the removed first dielectric layer is deposited on surfaces of the first dielectric layer between the lower patterns, to form a second dielectric layer having a thickness greater than that of the first dielectric layer. The second dielectric layer on the sidewalls of the lower patterns and the substrate is etched to form a dielectric layer pattern. Accordingly, damage to the underlying layer may be reduced, and an unnecessary dielectric layer may be completely removed.
摘要翻译：在形成电介质层图案的方法中，在基板上形成下图案。第一电介质层形成在下图案的侧壁和上表面以及基板的表面上。在第一电介质层上形成掩模图案以部分地暴露第一介电层。部分地去除在下图案的上表面和上侧壁上的暴露的第一电介质层，并且将去除的第一介电层沉积在下图案之间的第一介电层的表面上，以形成厚度大于其的厚度的第二电介质层。的第一介电层。在下图案和衬底的侧壁上的第二电介质层被蚀刻以形成电介质层图案。因此，可能减少对下层的损伤，并且可以完全去除不需要的介电层。

37. 发明授权

US07534708B2 Recessed-type field effect transistor with reduced body effect 有权
标题翻译：嵌入式场效应晶体管具有降低的体效
公开(公告)号：US07534708B2
公开(公告)日：2009-05-19
申请号：US11452867
申请日：2006-06-14
申请人： Dong-Hyun Kim , Du-Heon Song , Sang-Hyun Lee , Hyeoung-Won Seo , Dae-Joong Won
发明人： Dong-Hyun Kim , Du-Heon Song , Sang-Hyun Lee , Hyeoung-Won Seo , Dae-Joong Won
IPC分类号： H01L21/3205
CPC分类号： H01L29/66537 , H01L21/823437 , H01L21/823487 , H01L27/10852 , H01L27/10876 , H01L29/1041 , H01L29/42376 , H01L29/66621
摘要： For fabricating a field effect transistor, an extra-doped channel region is formed below a surface of a semiconductor substrate. An opening is formed in the semiconductor substrate into the extra-doped channel region. A gate insulator is formed at walls of the opening such that the extra-doped channel region abuts the gate insulator at a bottom portion of the opening. The opening is filled with a gate electrode. Such an extra-doped channel region prevents undesired body effect in the field effect transistor.
摘要翻译：为了制造场效应晶体管，在半导体衬底的表面的下方形成了掺杂杂质的沟道区。在半导体衬底中形成开口，形成超掺杂沟道区。在开口的壁处形成栅极绝缘体，使得超掺杂沟道区在开口的底部邻接栅极绝缘体。开口填充有栅电极。这种超掺杂沟道区域防止场效应晶体管中的不期望的体效应。

38. 发明申请

US20080199975A1 METHODS OF FORMING A METAL OXIDE LAYER PATTERN HAVING A DECREASED LINE WIDTH OF A PORTION THEREOF AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：形成具有其部分的下降线宽度的金属氧化物层图案的方法和使用其制造半导体器件的方法
公开(公告)号：US20080199975A1
公开(公告)日：2008-08-21
申请号：US12032018
申请日：2008-02-15
申请人： Min-Joon Park , Chang-Jin Kang , Dong-Hyun Kim
发明人： Min-Joon Park , Chang-Jin Kang , Dong-Hyun Kim
IPC分类号： H01L21/18 , H01L21/3065
CPC分类号： H01L27/11521 , H01L21/0206 , H01L21/31116 , H01L21/31122 , H01L21/32136 , H01L27/115 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L29/40117
摘要： Provided herein are methods of forming a metal oxide layer pattern on a substrate including providing a preliminary metal oxide layer on a substrate; etching the preliminary metal oxide layer to provide a preliminary metal oxide layer pattern, wherein the line width of the preliminary metal oxide layer pattern gradually increases in a vertically downward direction; and etching the preliminary metal oxide layer pattern to form a metal oxide layer pattern in a manner so as to decrease the line width of a lower portion of the preliminary metal oxide layer. The present invention also provides methods of manufacturing a semiconductor device including forming a metal oxide layer and a first conductive layer on a substrate; etching the metal oxide layer to provide a preliminary metal oxide layer pattern, wherein the line width of the preliminary metal oxide layer pattern gradually increase in a vertically downward direction; etching the first conductive layer to provide a first conductive layer pattern; and etching the preliminary metal oxide layer pattern to provide a metal oxide layer pattern in a manner so as to decrease the line width of a lower portion of the preliminary metal oxide layer pattern.
摘要翻译：本文提供了在衬底上形成金属氧化物层图案的方法，包括在衬底上提供初步金属氧化物层; 蚀刻初始金属氧化物层以提供初步金属氧化物层图案，其中预备金属氧化物层图案的线宽在垂直向下的方向上逐渐增加; 并且以使得预备金属氧化物层的下部的线宽减小的方式蚀刻初步金属氧化物层图案以形成金属氧化物层图案。本发明还提供了制造半导体器件的方法，包括在衬底上形成金属氧化物层和第一导电层; 蚀刻金属氧化物层以提供初步金属氧化物层图案，其中初始金属氧化物层图案的线宽在垂直向下的方向上逐渐增加; 蚀刻第一导电层以提供第一导电层图案; 并且蚀刻初步金属氧化物层图案以提供金属氧化物层图案，以便减小初步金属氧化物层图案的下部的线宽度。

39. 发明申请

US20080150008A1 Non-volatile memory devices and methods of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080150008A1
公开(公告)日：2008-06-26
申请号：US12004985
申请日：2007-12-21
申请人： Dong-Hyun Kim , Chang-Jin Kang
发明人： Dong-Hyun Kim , Chang-Jin Kang
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L21/28282
摘要： Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern on the charge-trapping layer pattern. Second blocking layer patterns are on the tunnel insulating layer proximate sidewalls of the charge-trapping layer pattern. The second blocking layer patterns are configured to limit lateral diffusion of electrons trapped in the charge-trapping layer pattern. A gate electrode is on the first blocking layer pattern. The second blocking layer patterns may prevent lateral diffusion of the electrons trapped in the charge-trapping layer pattern.
摘要翻译：非易失性存储器件包括在衬底的沟道区上的隧道绝缘层，隧道绝缘层上的电荷俘获层图案和电荷俘获层图案上的第一阻挡层图案。第二阻挡层图案位于邻近电荷俘获层图案侧壁的隧道绝缘层上。第二阻挡层图案被配置为限制捕获在电荷俘获层图案中的电子的横向扩散。栅电极位于第一阻挡层图案上。第二阻挡层图案可以防止捕获在电荷俘获层图案中的电子的横向扩散。

40. 发明申请

US20070120490A1 Plasma display panel 审中-公开
标题翻译：等离子显示面板
公开(公告)号：US20070120490A1
公开(公告)日：2007-05-31
申请号：US11604548
申请日：2006-11-27
申请人： Dong-Hyun Kim
发明人： Dong-Hyun Kim
IPC分类号： H01J17/02
CPC分类号： H01J11/38 , H01J11/12 , H01J2211/245
摘要： Provided is a plasma display panel that includes a first substrate, a second substrate facing the first substrate, a pair of discharge electrode lines which are disposed between the first substrate and the second substrate and comprise a first discharge electrode line formed by connecting a plurality of sub-electrode lines and a second discharge electrode line that faces the first discharge electrode line and is formed by connecting a plurality of sub-electrode lines, and dielectric layers that bury the discharge electrode lines. Since the dielectric layers include B2O3 and BaO, yellowness caused by the migration of a metal component included in the discharge electrode lines into the dielectric layers during a firing process can be prevented.
摘要翻译：提供了一种等离子体显示面板，其包括第一基板，面向第一基板的第二基板，一对放电电极线，设置在第一基板和第二基板之间，并且包括通过连接多个子电极线和与第一放电电极线相对并且通过连接多个子电极线而形成的第二放电电极线以及掩埋放电电极线的电介质层。由于介电层包括B 2 O 3和BaO，在烧制过程中由包含在放电电极线中的金属成分迁移到电介质层中引起的黄色可以被阻止

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