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    • 34. 发明授权
    • Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof
    • 半导体异质结构的光学带隙及其产生的产品的选择性后生长调谐的方法
    • US07151061B1
    • 2006-12-19
    • US09423401
    • 1999-11-05
    • Gang LiSoo Jin Chua
    • Gang LiSoo Jin Chua
    • H01L21/388
    • H01L21/388H01L21/182H01L33/0095H01S5/4087
    • A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. According to one aspect of the invention, a metal interlayer is deposited between the heterostructure and a dielectric layer such as silica. According to another aspect of the invention, an oxidized surface is provided between a dielectric layer and the heterostructure. The presence of the oxide layer improves stability and reproducibility in the post-annealing process. In a further aspect, the oxide layer may be provided between the interlayer and the heterostructure. In one embodiment of the invention, a photoresist mask with a specific pattern is deposited on the surface of the heterostructure so that the interlayer is deposited in an unmasked region whereon post-growth tuning results. In another embodiment, multiple photolithography is performed to deposit interlayers of varying thickness and/or regions on the heterostructure, followed by thermal post-annealing of the dielectric layer. This method produces heterostructures with optical bandgaps having selectively tuned regions.
    • 控制用于半导体异质结构的光学带隙的后生长调谐的IFVEI的程度的方法。 所得到的层结构可以包含具有一个或多个具有选择性改性带隙的区域的半导体异质结构。 根据本发明的一个方面,金属中间层沉积在异质结构和介电层如二氧化硅之间。 根据本发明的另一方面,在电介质层和异质结构之间提供氧化表面。 氧化物层的存在提高了后退火工艺中的稳定性和再现性。 在另一方面,氧化物层可以设置在中间层和异质结构之间。 在本发明的一个实施例中,具有特定图案的光致抗蚀剂掩模沉积在异质结构的表面上,使得中间层沉积在未成荫的区域中,其中生长后调节结果。 在另一个实施例中,执行多次光刻以在异质结构上沉积不同厚度和/或区域的夹层,然后对介电层进行热后退火。 该方法产生具有选择性调谐区域的光学带隙的异质结构。
    • 36. 发明申请
    • Method and apparatus for washing solid substrate with ultrasonic wave after hybridization reaction
    • 杂交反应后用超声波洗涤固体底物的方法和装置
    • US20060124152A1
    • 2006-06-15
    • US10524903
    • 2002-12-10
    • Gang LiWanli XingRuige WuMin GuoJing Cheng
    • Gang LiWanli XingRuige WuMin GuoJing Cheng
    • B08B3/10
    • B08B3/12C12Q1/6813C12Q2523/301
    • A method and apparatus for washing solid substrate with ultrasonic wave after hybridization reaction are provided. The method includes (1) putting the solid substrate into a container having a washing solution, on which the hybridization reaction has been completed, (2) using an ultrasonic generator to produce a certain strength of ultrasonic wave and transmit it into the washing solution, (3) washing the substrate by means of the cavitation effect being produced in the washing solution by the ultrasonic wave. Since the cavitation bubbles in the washing solution can produce intensive efflux and local microslipstream against the solid surface, evidently reducing the liquid surface tension and friction and enhance the liquid flow, non-specific adsorbate and deposit bound weakly on the solid substrate can be washed down rapidly.
    • 提供了一种用于在杂交反应之后用超声波洗涤固体底物的方法和装置。 该方法包括:(1)将固体基质置于具有杂交反应完成的洗涤液的容器中,(2)使用超声波发生器产生一定强度的超声波并将其输送到洗涤液中, (3)通过超声波在洗涤液中产生的空化作用洗涤基板。 由于洗涤液中的气穴气泡能够对固体表面产生强烈的流出和局部微滑流,明显降低了液面张力和摩擦力,增强了液体流动,固体基质上弱结合的非特异性吸附物和沉积物可以被冲洗掉 迅速