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31. 发明授权

US06538271B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06538271B2
公开(公告)日：2003-03-25
申请号：US09874309
申请日：2001-06-06
申请人： Shigehiko Saida , Yoshitaka Tsunashima
发明人： Shigehiko Saida , Yoshitaka Tsunashima
IPC分类号： H01L2120
CPC分类号： H01L21/3185 , C23C16/0218 , C23C16/0272 , C23C16/345 , H01L27/10852 , H01L27/10861
摘要： A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.
摘要翻译：半导体器件包括形成在半导体衬底上的半导体衬底和氮化硅膜。氮化硅膜基本上不含Si-H键，并且每单位面积的Si-H密度为1×10 15 cm -2以下。

32. 发明授权

US06333547B1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06333547B1
公开(公告)日：2001-12-25
申请号：US09478369
申请日：2000-01-06
申请人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
IPC分类号： H01L2358
CPC分类号： H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76826 , H01L21/76831 , H01L21/76834 , H01L21/76879 , H01L21/76897 , H01L23/485 , H01L27/10873 , H01L2924/0002 , H01L2924/00
摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
摘要翻译：使用六氯二硅烷（Si 2 Cl 6）作为用于形成可能与氧化硅膜的蚀刻速率差异很大的氮化硅膜的Si原料。氮化硅膜通过LPCVD法形成。

33. 发明授权

US06326658B1 Semiconductor device including an interface layer containing chlorine 失效
标题翻译：包括含有氯的界面层的半导体装置
公开(公告)号：US06326658B1
公开(公告)日：2001-12-04
申请号：US09404594
申请日：1999-09-24
申请人： Yoshitaka Tsunashima , Katsuya Okumura , Masayuki Tanaka , Shigehiko Saida , Hirofumi Inoue , Takeshi Hamamoto
发明人： Yoshitaka Tsunashima , Katsuya Okumura , Masayuki Tanaka , Shigehiko Saida , Hirofumi Inoue , Takeshi Hamamoto
IPC分类号： H01L27108
CPC分类号： H01L27/10867
摘要： A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the buried strap (polycrystalline Si) without causing an increase in the contact resistance in the post process accompanied by high temperature after formation of the buried strap.
摘要翻译：在沟槽侧面上形成SiC层之后形成掩埋带，以抑制从沟槽的侧表面（单晶Si）到掩埋带（多晶Si）的Si的外延生长而不会增加在后处理中的接触电阻伴随着形成埋藏带的高温。

34. 发明授权

US6146938A Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6146938A
公开(公告)日：2000-11-14
申请号：US340143
申请日：1999-06-28
申请人： Shigehiko Saida , Yoshitaka Tsunashima , Tsutomu Sato
发明人： Shigehiko Saida , Yoshitaka Tsunashima , Tsutomu Sato
IPC分类号： H01L21/02 , H01L21/318 , H01L21/8242
CPC分类号： H01L27/1087 , H01L28/40 , H01L21/3185 , H01L27/1085
摘要： A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.
摘要翻译：去除在硅衬底的表面上形成的天然膜。砷被掺杂到硅衬底的表面中以形成作为下电容器电极的n型杂质扩散层。在n型杂质扩散层上形成作为电容绝缘膜的氮化硅膜，而不会在n型杂质扩散层的表面上生长任何氧化膜。在氮化硅膜上形成上部电容电极。

35. 发明授权

US06133121A Apparatus for supporting semiconductor wafers and semiconductor wafer processing method using supporting apparatus 失效
标题翻译：用于支撑半导体晶片的装置和使用支撑装置的半导体晶片处理方法
公开(公告)号：US06133121A
公开(公告)日：2000-10-17
申请号：US950913
申请日：1997-10-15
申请人： Yoshitaka Tsunashima , Katsuya Okumura , Shigeru Yonemoto
发明人： Yoshitaka Tsunashima , Katsuya Okumura , Shigeru Yonemoto
IPC分类号： C23C16/458 , H01L21/31 , H01L21/324 , H01L21/673 , C23C16/00
CPC分类号： H01L21/67303 , C23C16/4583 , H01L21/67306 , H01L21/67309
摘要： A plurality of rods are arranged between first and second plates. A plurality of support members formed of heat-resistant strings, for example, SiC are stretched between the rods and wafers are supported by the support members. The wafers are separated from the rods while they are supported on the support members.
摘要翻译：多个杆布置在第一和第二板之间。由耐热线圈例如SiC形成的多个支撑构件在杆之间拉伸，并且晶片由支撑构件支撑。当晶片被支撑在支撑构件上时，晶片与棒分离。

36. 发明授权

US6091117A Field effect transistor having elevated source and drain regions and methods of manufacturing the same 失效
标题翻译：具有升高的源极和漏极区域的场效应晶体管及其制造方法
公开(公告)号：US6091117A
公开(公告)日：2000-07-18
申请号：US373558
申请日：1999-08-13
申请人： Jun-ichi Shiozawa , Yoshitaka Tsunashima , Katsuya Okumura
发明人： Jun-ichi Shiozawa , Yoshitaka Tsunashima , Katsuya Okumura
IPC分类号： H01L29/78 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/08
CPC分类号： H01L29/66628 , H01L21/76895 , H01L29/0847
摘要： A field effect transistor is manufactured by forming an isolating structure on a semiconductor substrate to define an active area. A gate structure is formed which is insulated from a surface of the active area of the semiconductor substrate. An amorphous silicon film is formed on the gate structure, on the surface of the semiconductor substrate, and on the isolating structure. A first portion of the amorphous silicon film is converted to an epitaxial film and a second portion of the amorphous silicon film is converted to a polysilicon film. Impurities are diffused throughout the polysilicon film and into an upper surface portion of said epitaxial film. The impurity doped polysilicon film and the upper surface portion of the epitaxial film are oxidized to form oxide films and the oxide films are removed so that the epitaxial film remains at least on the active area of the semiconductor substrate. Source and drain regions of the transistor are formed in the active area of the semiconductor substrate.
摘要翻译：通过在半导体衬底上形成隔离结构来限定有源区域来制造场效应晶体管。形成与半导体衬底的有源区的表面绝缘的栅极结构。在栅极结构，半导体衬底的表面和隔离结构上形成非晶硅膜。将非晶硅膜的第一部分转变为外延膜，将非晶硅膜的第二部分转换为多晶硅膜。杂质扩散到整个多晶硅膜并进入所述外延膜的上表面部分。杂质掺杂多晶硅膜和外延膜的上表面部分被氧化以形成氧化物膜，并且去除氧化物膜，使得外延膜至少保留在半导体衬底的有源区上。晶体管的源区和漏区形成在半导体衬底的有源区中。

37. 发明授权

US5970352A Field effect transistor having elevated source and drain regions and methods for manufacturing the same 失效
标题翻译：形成具有升高的源极和漏极区域的场效应晶体管的方法
公开(公告)号：US5970352A
公开(公告)日：1999-10-19
申请号：US64716
申请日：1998-04-23
申请人： Jun-ichi Shiozawa , Yoshitaka Tsunashima , Katsuya Okumura
发明人： Jun-ichi Shiozawa , Yoshitaka Tsunashima , Katsuya Okumura
IPC分类号： H01L29/78 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/08
CPC分类号： H01L29/66628 , H01L21/76895 , H01L29/0847
摘要： A field effect transistor is manufactured by forming an isolating structure on a semiconductor substrate to define an active area. A gate structure is formed which is insulated from a surface of the active area of the semiconductor substrate. An amorphous silicon film is formed on the gate structure, on the surface of the semiconductor substrate, and on the isolating structure. A first portion of the amorphous silicon film is converted to an epitaxial film and a second portion of the amorphous silicon film is converted to a polysilicon film. Impurities are diffused throughout the polysilicon film and into an upper surface portion of said epitaxial film. The impurity doped polysilicon film and the upper surface portion of the epitaxial film are oxidized to form oxide films and the oxide films are removed so that the epitaxial film remains at least on the active area of the semiconductor substrate. Source and drain regions of the transistor are formed in the active area of the semiconductor substrate.
摘要翻译：通过在半导体衬底上形成隔离结构来限定有源区域来制造场效应晶体管。形成与半导体衬底的有源区的表面绝缘的栅极结构。在栅极结构，半导体衬底的表面和隔离结构上形成非晶硅膜。将非晶硅膜的第一部分转变为外延膜，将非晶硅膜的第二部分转换为多晶硅膜。杂质扩散到整个多晶硅膜并进入所述外延膜的上表面部分。杂质掺杂多晶硅膜和外延膜的上表面部分被氧化以形成氧化物膜，并且去除氧化物膜，使得外延膜至少保留在半导体衬底的有源区上。晶体管的源区和漏区形成在半导体衬底的有源区中。

38. 发明授权

US5605574A Semiconductor wafer support apparatus and method 失效
标题翻译：半导体晶片支撑装置及方法
公开(公告)号：US5605574A
公开(公告)日：1997-02-25
申请号：US530641
申请日：1995-09-20
申请人： Yoshitaka Tsunashima , Katsuya Okumura
发明人： Yoshitaka Tsunashima , Katsuya Okumura
IPC分类号： H01L21/683 , C01B31/36 , C23C16/458 , C30B25/12 , C30B31/14 , F16F1/02 , H01L21/673 , C23C16/00
CPC分类号： H01L21/67309 , C23C16/4583 , C30B25/12 , C30B31/14
摘要： The wafer support apparatus and method provide a plurality of elastic supports having a smooth curvature for contacting a wafer at a respective plurality of support points. Each elastic support directly contacts the wafer at a support point and expands and/or compresses independently of the other elastic supports to accommodate the bending of the wafer during processing.A wafer support apparatus includes a plurality of flexible elastic supports onto which a wafer is directly positioned, wherein each of the plurality of elastic supports holds the wafer during processing by compressing or expanding in response to bending of the wafer during processing to provide continuous even support for the wafer during processing. A wafer support method includes the steps of providing a plurality of flexible elastic supports and positioning a wafer to be processed directly on the plurality of elastic supports, wherein each of the plurality of elastic supports holds the wafer during processing by compressing or expanding in response to bending of the wafer during processing to provide continuous even support for the wafer during processing.The elastic supports may be manufactured using a method including the steps of providing a mold in the shape of a wafer elastic support; depositing a layer of an elastic material having low thermal expansion coefficient on the mold; forming a hole in the deposited layer of elastic material at the base of the mold; and burning out the mold.
摘要翻译：晶片支撑装置和方法提供了多个具有平滑曲率的弹性支撑件，用于在相应的多个支撑点处接触晶片。每个弹性支撑件在支撑点处直接接触晶片并且独立于其它弹性支撑件膨胀和/或压缩以适应处理期间晶片的弯曲。晶片支撑装置包括多个柔性弹性支撑件，晶片直接定位在该多个柔性弹性支撑件上，其中多个弹性支撑件中的每一个在处理期间通过在处理期间响应于晶片的弯曲而压缩或膨胀来保持晶片以提供连续的均匀支撑用于处理过程中的晶圆。一种晶片支撑方法包括以下步骤：提供多个柔性弹性支撑件并将待加工的晶片直接定位在所述多个弹性支撑件上，其中所述多个弹性支撑件中的每个弹性支撑件在处理期间通过压缩或扩张来响应于在处理期间晶片的弯曲以在处理期间为晶片提供连续的均匀支撑。可以使用包括以下步骤的方法制造弹性支撑件：提供具有晶片弹性支撑件形状的模具; 在模具上沉积具有低热膨胀系数的弹性材料层; 在模具底部的弹性材料的沉积层中形成孔; 并焚烧模具。

39. 发明授权

US5485034A Semiconductor device including bipolar transistor having shallowed base 失效
标题翻译：包括具有浅基极的双极晶体管的半导体器件
公开(公告)号：US5485034A
公开(公告)日：1996-01-16
申请号：US344694
申请日：1994-11-18
申请人： Takeo Maeda , Hiroshi Gojohbori , Yoshitaka Tsunashima
发明人： Takeo Maeda , Hiroshi Gojohbori , Yoshitaka Tsunashima
IPC分类号： H01L29/73 , H01L21/331 , H01L27/06 , H01L29/10 , H01L29/732 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/7322 , H01L27/0623 , H01L29/1004
摘要： A semiconductor device of this invention includes an N-type semiconductor region functioning as a collector of a bipolar transistor, a silicon dioxide film doped with boron and formed in contact with the surface of the N-type semiconductor region, a P-type semiconductor region formed in contact with the silicon dioxide film doped with boron in the N-type semiconductor region and functioning as a base of the bipolar transistor, and an N-type semiconductor region formed in the P-type semiconductor region and functioning as an emitter of the bipolar transistor.
摘要翻译：本发明的半导体器件包括用作双极晶体管的集电极的N型半导体区域，掺杂有硼并与N型半导体区域的表面接触形成的二氧化硅膜，P型半导体区域形成为与N型半导体区域中掺杂有硼的二氧化硅膜接触并用作双极晶体管的基极，并且形成在P型半导体区域中并用作发光体的N型半导体区域双极晶体管。

40. 发明申请

US20100055869A1 Semiconductor device and method of manufacturing same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100055869A1
公开(公告)日：2010-03-04
申请号：US12588087
申请日：2009-10-02
申请人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda , Yoshitaka Tsunashima
发明人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda , Yoshitaka Tsunashima
IPC分类号： H01L21/762
CPC分类号： H01L27/11521 , H01L27/11524
摘要： A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽中形成具有第一凹陷部分的第一绝缘膜，形成涂膜以便将其涂覆在第一凹部中，将涂膜转变为第二绝缘膜，平坦化第二绝缘膜以暴露第一绝缘膜和第二绝缘膜，至少从第一凹部去除第二绝缘膜，以调节形成在沟槽中的第一凹部的纵横比，由此形成在其中形成第二凹部，在半导体衬底的表面上形成第三绝缘膜，以便填充第二凹部。

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