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31. 发明授权

US5328555A Reducing particulate contamination during semiconductor device processing 失效
标题翻译：减少半导体器件加工过程中的颗粒污染
公开(公告)号：US5328555A
公开(公告)日：1994-07-12
申请号：US980828
申请日：1992-11-24
申请人： Anand Gupta
发明人： Anand Gupta
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/00
CPC分类号： H01L21/02046 , Y10S438/906
摘要： A process of removing particles from the surface of a substrate to be processed in a vacuum chamber comprising forming a plasma from an inert plasma precursor gas in said chamber, thereby lifting loosely adhered particles from the surface of the substrate, and increasing the flow of said inert gas without increasing the pressure in the vacuum chamber, thereby sweeping the particles beyond the surface of the substrate, where they can be removed by the vacuum chamber exhaust system. Particles having a particle size of about 0.1 micron or larger can be removed in this fashion.
摘要翻译：一种在真空室中从待处理的基板的表面除去颗粒的方法，包括在所述室中从惰性等离子体前驱体气体形成等离子体，从而从基板的表面提起松散粘附的颗粒，并且增加所述惰性气体，而不增加真空室中的压力，从而将颗粒扫过超过衬底的表面，在那里它们可被真空室排气系统除去。可以以这种方式去除粒径为约0.1微米或更大的颗粒。

32. 发明授权

US09040816B2 Methods and apparatus for forming photovoltaic cells using electrospray 有权
标题翻译：使用电喷雾形成光伏电池的方法和装置
公开(公告)号：US09040816B2
公开(公告)日：2015-05-26
申请号：US11953758
申请日：2007-12-10
申请人： Anand Gupta
发明人： Anand Gupta
IPC分类号： H01L31/04 , C23C18/12 , H01L31/0384 , H01L31/18 , H01G9/20 , H01L27/30
CPC分类号： H01L31/18 , C23C18/1208 , H01G9/20 , H01G9/2027 , H01G9/2031 , H01G9/2036 , H01G9/2054 , H01G9/2059 , H01G9/2063 , H01G9/2068 , H01L27/304 , H01L31/0384 , Y02E10/50 , Y02E10/542 , Y02P70/521
摘要： Methods of forming a photovoltaic structures including nanoparticles are disclosed. The method includes electrospray deposition of nanoparticles. The nanoparticles can include TiO2 nanoparticles and quantum dots. In an example, the nanoparticles are formed on a flexible substrate. In various examples, the flexible substrate is light transparent. Photovoltaic structures and apparatus for forming photovoltaic structures are disclosed.
摘要翻译：公开了形成包括纳米颗粒的光伏结构的方法。该方法包括纳米颗粒的电喷雾沉积。纳米颗粒可以包括TiO 2纳米颗粒和量子点。在一个实例中，纳米颗粒形成在柔性基底上。在各种示例中，柔性基板是透光的。公开了用于形成光伏结构的光伏结构和装置。

33. 发明授权

US06214160B1 Method and apparatus for removing particulates from semiconductor substrates in plasma processing chambers 失效
标题翻译：用于从等离子体处理室中的半导体衬底去除微粒的方法和装置
公开(公告)号：US06214160B1
公开(公告)日：2001-04-10
申请号：US09074562
申请日：1998-05-07
申请人： Charles Dornfest , Anand Gupta , Gerald Girard
发明人： Charles Dornfest , Anand Gupta , Gerald Girard
IPC分类号： C23F102
CPC分类号： H01L21/67028 , B08B6/00 , B08B7/0035 , C23C16/4401 , H01J37/32082 , H01J2237/022
摘要： An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.
摘要翻译：一种用于在诸如等离子体增强化学气相沉积（PECVD）室的等离子体处理室中从半导体晶片去除颗粒物质的静电技术。在微粒去除操作阶段期间，支撑晶片的正常接地电极暂时与地离开，并且偏置电压发生器同时连接到电极，提供足够的偏压以从晶片的表面静电发射微粒。在微粒去除阶段期间维持在正常接地电极上方形成的等离子体，并且从晶片发射的微粒悬浮在围绕等离子体的护套区域中，从那里可以通过气体的吹扫流将其去除。优选地，偏置电压发生器提供极性交替的偏置电压，以确保从晶片表面去除带正电荷和带负电荷的颗粒。

34. 发明授权

US6159333A Substrate processing system configurable for deposition or cleaning 有权
标题翻译：衬底处理系统可配置为沉积或清洗
公开(公告)号：US6159333A
公开(公告)日：2000-12-12
申请号：US169058
申请日：1998-10-08
申请人： Anand Gupta , Srihari Ponnekanti , Gana A. Rimple , Laxman Murugesh
发明人： Anand Gupta , Srihari Ponnekanti , Gana A. Rimple , Laxman Murugesh
IPC分类号： C23C16/44 , H01L21/00 , C23F1/02
CPC分类号： H01L21/67028 , C23C16/4405 , H01J37/32862 , Y10S156/916
摘要： An apparatus for processing substrates that is configured for a cleaning operation by loading a cleaning process wafer onto the susceptor before forming a cleaning plasma in the processing chamber. In one embodiment, a ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of the plasma, and spreads the plasma away from the susceptor during a cleaning operation, thus reducing damage to the susceptor. The plasma may be directed towards the walls of the chamber to reduce chamber cleaning time.
摘要翻译：一种用于处理基板的装置，其被配置为通过在处理室中形成清洁等离子体之前将清洁处理晶片装载到基座上来进行清洁操作。在一个实施例中，陶瓷晶片被选择为具有足以改变等离子体的电磁场的电介质值，并且在清洁操作期间将等离子体远离基座扩散，从而减少对基座的损坏。等离子体可以被引导到室的壁以减少室清洁时间。

35. 发明授权

US6001728A Method and apparatus for improving film stability of halogen-doped silicon oxide films 失效
公开(公告)号：US6001728A
公开(公告)日：1999-12-14
申请号：US616707
申请日：1996-03-15
申请人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Viren V. S. Rana
发明人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Viren V. S. Rana
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02274 , H01L21/31629 , Y10T29/41
摘要： A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.

36. 发明授权

US5954888A Post-CMP wet-HF cleaning station 失效
标题翻译：后CMP湿HF清洗站
公开(公告)号：US5954888A
公开(公告)日：1999-09-21
申请号：US20979
申请日：1998-02-09
申请人： Anand Gupta , Chris Karlsrud , Periya Gopalan
发明人： Anand Gupta , Chris Karlsrud , Periya Gopalan
IPC分类号： H01L21/00 , H01L21/3105 , C23G1/02
CPC分类号： H01L21/67057 , H01L21/31053 , H01L21/67046 , H01L21/67051 , Y10S134/902
摘要： The present invention provides a method for cleaning semiconductor work pieces following a Chemical Mechanical Planarization ("CMP") procedure. Initially, a work piece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the work piece. Next, the work piece is transported into a HF cleaning station wherein the work piece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The work piece then is immersed in a hydrogen fluoride ("HF") solution which is circulated around the various surfaces of the work piece. The work piece is immersed in the HF solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the work piece.
摘要翻译：本发明提供了按照化学机械平面化（“CMP”）程序清洗半导体工件的方法。最初，将工件擦洗以除去工件表面上的一些浆料和其它污染物。接下来，工件被输送到HF清洗站，其中工件水平定位，使得上表面和下表面都基本上露出。然后将工件浸入在工件的各个表面周围循环的氟化氢（“HF”）溶液中。将工件浸入HF溶液中足够长的时间以除去适当的氧化物层，从而从工件的表面除去污染物和平滑微划痕。

37. 发明授权

US5827785A Method for improving film stability of fluorosilicate glass films 失效
标题翻译：提高氟硅酸盐玻璃膜的膜稳定性的方法
公开(公告)号：US5827785A
公开(公告)日：1998-10-27
申请号：US736555
申请日：1996-10-24
申请人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Virendra V. S. Rana
发明人： Mohan Krishan Bhan , Sudhakar Subrahmanyam , Anand Gupta , Virendra V. S. Rana
IPC分类号： H01L21/31 , C23C16/40 , C23C16/505 , C23C16/52 , H01L21/316
CPC分类号： H01L21/31625 , C23C16/401 , C23C16/505 , C23C16/52 , H01L21/02131 , H01L21/02274
摘要： A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing a process gas including a first halogen source and a second halogen source, different from the first halogen source, into a deposition chamber along with silicon and oxygen sources. A plasma is then formed from the process gas to deposit a halogen-doped layer over a substrate disposed in the chamber. It is believed that the introduction of the additional halogen source enhances the etching effect of the film. The enhanced etching component of the film deposition improves the film's gap-fill capabilities and helps stabilizes the film. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film, SiF.sub.4 is employed as the first halogen source, TEOS is employed as a source of silicon and the second halogen source is either F.sub.2 or NF.sub.3.
摘要翻译：一种改善卤素掺杂氧化硅层的膜稳定性的方法和装置。该方法包括将含有不同于第一卤素源的第一卤素源和第二卤素源的处理气体与硅和氧源一起引入沉积室的步骤。然后从处理气体形成等离子体，以在设置在腔室中的衬底上沉积卤素掺杂层。据信引入额外的卤素源增强了膜的蚀刻效果。膜沉积的增强的蚀刻成分改善了膜的间隙填充能力并且有助于使膜稳定化。在优选实施例中，掺杂卤素的膜是氟硅酸盐玻璃膜，SiF 4用作第一卤素源，TEOS用作硅源，第二卤素源是F2或NF3。

38. 发明授权

US5083865A Particle monitor system and method 失效
标题翻译：颗粒监测系统和方法
公开(公告)号：US5083865A
公开(公告)日：1992-01-28
申请号：US522606
申请日：1990-05-11
申请人： Patrick Kinney , Boris Fishkin , Jun Zhao , Anand Gupta , Robert Bendler
发明人： Patrick Kinney , Boris Fishkin , Jun Zhao , Anand Gupta , Robert Bendler
IPC分类号： G01N15/00 , G01N15/14 , G01N21/15 , G01N21/53 , G01N21/88 , G01N21/956 , H01L21/02 , H01L21/205 , H01L23/29 , H01L23/31
CPC分类号： G01N21/53 , G01N2021/155 , G01N2021/157 , G01N21/15
摘要： A particle monitor for a processing chamber exhaust line is disclosed which incorporates exhaust line heating, purge gas flow over surfaces such as optical windows in the exhaust gas line, and a thermally and electrically insulating particle monitor mounting arrangement. The features collectively protect the particle monitor from electrical disturbance and from the heated inlet and maintain the optical surfaces clean and free of depositions from the exhaust gas flow for an extended period. The arrangement also suppresses etching of the optical surfaces.

39. 发明授权

US08624857B2 Haptics effect controller architecture and instruction set 有权
标题翻译：触觉效果控制器架构和指令集
公开(公告)号：US08624857B2
公开(公告)日：2014-01-07
申请号：US13024042
申请日：2011-02-09
申请人： Hugo Cheung , Anand Gupta
发明人： Hugo Cheung , Anand Gupta
IPC分类号： G06F3/041
CPC分类号： G06F3/0416 , G06F3/016 , H03K2217/96062
摘要： A method for generating a desired haptics effect is provided. A haptics effect instruction is generated by a host processor responsive to a touch screen, where the haptics effect instruction corresponds to the desired haptics effect. This haptics effect instruction is received by a haptics driver, and a haptic profile from the haptics effect instruction is generated from the haptics effect instruction. The haptic profile includes at least one of a profile word, a move word, wait/halt word, and a branch word, and a sine wave is generated from the from the haptic profile that corresponds to the desired haptics effect.
摘要翻译：提供了一种产生期望的触觉效果的方法。触觉效果指令由主机处理器响应于触摸屏产生，其中触觉效果指令对应于期望的触觉效果。该触觉效果指令由触觉驱动器接收，并且从触觉效果指令生成来自触觉效果指令的触觉简档。触觉简档包括简档字，移动字，等待/停止字和分支字中的至少一个，并且从对应于期望的触觉效果的触觉简档中产生正弦波。

40. 发明申请

US20120200509A1 HAPTICS EFFECT CONTROLLER ARCHITECTURE AND INSTRUCTION SET 有权
标题翻译： HAPTICS效应控制器结构和指令集
公开(公告)号：US20120200509A1
公开(公告)日：2012-08-09
申请号：US13024042
申请日：2011-02-09
申请人： Hugo Cheung , Anand Gupta
发明人： Hugo Cheung , Anand Gupta
IPC分类号： G06F3/041
CPC分类号： G06F3/0416 , G06F3/016 , H03K2217/96062
摘要： A method for generating a desired haptics effect is provided. A haptics effect instruction is generated by a host processor responsive to a touch screen, where the haptics effect instruction corresponds to the desired haptics effect. This haptics effect instruction is received by a haptics driver, and a haptic profile from the haptics effect instruction is generated from the haptics effect instruction. The haptic profile includes at least one of a profile word, a move word, wait/halt word, and a branch word, and a sine wave is generated from the from the haptic profile that corresponds to the desired haptics effect.
摘要翻译：提供了一种产生期望的触觉效果的方法。触觉效果指令由主机处理器响应于触摸屏产生，其中触觉效果指令对应于期望的触觉效果。该触觉效果指令由触觉驱动器接收，并且从触觉效果指令生成来自触觉效果指令的触觉简档。触觉简档包括简档字，移动字，等待/停止字和分支字中的至少一个，并且从对应于期望的触觉效果的触觉简档中产生正弦波。

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