专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07009759B2 Multiple channel optical frequency mixers for all-optical signal processing 失效
标题翻译：用于全光信号处理的多通道光混频器
公开(公告)号：US07009759B2
公开(公告)日：2006-03-07
申请号：US09821701
申请日：2001-03-28
申请人： Ming-Hsien Chou , Krishnan Parameswaran , Martin M. Fejer
发明人： Ming-Hsien Chou , Krishnan Parameswaran , Martin M. Fejer
IPC分类号： G02F1/365
CPC分类号： G02F1/3544 , G02F1/365
摘要： A multi-channel optical frequency mixer for all-optical signal processing and a method for engineering the same. The multi-channel mixer uses a nonlinear optical material exhibiting an effective nonlinearity deff whose spatial distribution is defined by a quasi-phase-matching grating, e.g., a QPM grating. The spatial distribution is defined such that its Fourier transform to the spatial frequency domain defines at least two wavelength channels which are quasi-phase-matched for performing optical frequency mixing. The wavelength channels correspond to dominant Fourier components and the Fourier transform is appropriately adjusted using grating parameters such as grating periods, phase reversal sequences and duty cycles to include an odd or even number of dominant Fourier components. The multi-channel mixer can perform frequency mixing operations such as second harmonic generation (SHG), difference frequency generation (DFG), sum frequency generation (SFG), and parametric amplification.
摘要翻译：一种用于全光信号处理的多通道光混频器及其工程方法。多通道混频器使用表现出有效非线性的非线性光学材料，其空间分布由准相位匹配光栅例如QPM光栅限定。定义空间分布，使得其对空间频域的傅立叶变换定义了至少两个准相位匹配用于执行光频率混合的波长通道。波长通道对应于显性傅立叶分量，并且使用诸如光栅周期，相位反转序列和占空比的光栅参数适当地调整傅立叶变换，以包括奇数或偶数数量的显性傅立叶分量。多通道混频器可以执行诸如二次谐波发生（SHG），差频产生（DFG），和频产生（SFG）和参数放大之类的混频操作。

32. 发明授权

US06972896B2 Method of amplifying optical signals using doped materials with extremely broad bandwidths 有权
标题翻译：使用具有极宽带宽的掺杂材料放大光信号的方法
公开(公告)号：US06972896B2
公开(公告)日：2005-12-06
申请号：US10885262
申请日：2004-07-06
申请人： Yannick G. Feillens , Michel J. F. Digonnet , Martin M. Fejer
发明人： Yannick G. Feillens , Michel J. F. Digonnet , Martin M. Fejer
IPC分类号： H01S3/067 , H01S3/094 , H01S3/16 , H01S3/00
CPC分类号： H01S3/06754 , H01S3/06766 , H01S3/0677 , H01S3/094011 , H01S3/094096 , H01S3/1608 , H01S3/1643
摘要： In a method of amplifying optical input signals over a wide bandwidth, the optical input signals are applied to an optical waveguide made from a rare-earth-doped amorphous material (e.g., erbium-doped Bi4Ge3O12 material). The optical input signals include optical signals having wavelengths over a range of approximately 125. Pump light is applied to the optical waveguide to cause the waveguide to provide optical gain to the optical input signals. The optical gain causes the optical signals to be amplified within the waveguide to provide amplified optical signals over the approximately 125-nanometer range, including, in particular, optical signals having wavelengths at one end of the range and optical signals having wavelengths at a second end or the range.
摘要翻译：在宽带宽放大光输入信号的方法中，光输入信号被施加到由稀土掺杂的非晶材料制成的光波导（例如，掺杂铒的Bi 4 Ge SUB> 3 12 材料）。光输入信号包括具有大约125°范围内的波长的光信号。泵浦光被施加到光波导以使波导对光输入信号提供光增益。光学增益使得光信号在波导内被放大，以在大约125纳米范围内提供放大的光信号，特别是包括在该范围的一端具有波长的光信号，以及在第二端具有波长的光信号或范围。

33. 发明授权

US06273949B1 Method for fabricating orientation-patterned gallium arsenide seeding structures 有权
标题翻译：用于制造取向图案化的砷化镓接种结构的方法
公开(公告)号：US06273949B1
公开(公告)日：2001-08-14
申请号：US09394122
申请日：1999-09-10
申请人： Loren A. Eyres , Martin M. Fejer , Christopher B. Ebert , James S. Harris
发明人： Loren A. Eyres , Martin M. Fejer , Christopher B. Ebert , James S. Harris
IPC分类号： C30B2518
CPC分类号： G02F1/3556 , B82Y20/00 , C30B25/18 , G02F1/3558 , G02F2001/3548
摘要： A method for fabricating gallium arsenide (GaAs) based structure groups with inverted crystallographic orientation to form wavelength converters that utilizes germanium as a crystallographic neutral template layer deposited on a GaAs substrate. A crystallographic inverted gallium arsenide layer is grown on top of the template layer. In a selective trench etching process areas of the substrate are exposed again for a consecutive collective deposition of GaAs.
摘要翻译：一种制造具有倒置晶体取向的基于砷化镓（GaAs）的结构基团的方法，以形成利用锗作为沉积在GaAs衬底上的晶体中性模板层的波长转换器。晶体反转的砷化镓层生长在模板层的顶部。在选择性沟槽蚀刻工艺中，衬底的区域再次暴露出GaAs的连续集中沉积。

34. 发明授权

US6156255A Electric field domain patterning 失效
标题翻译：电场域图案化
公开(公告)号：US6156255A
公开(公告)日：2000-12-05
申请号：US111058
申请日：1998-07-07
申请人： Robert L. Byer , Martin M. Fejer , Gregory D. Miller , Lawrence E. Myers
发明人： Robert L. Byer , Martin M. Fejer , Gregory D. Miller , Lawrence E. Myers
IPC分类号： G02F1/355 , G01B15/00 , H05B6/00
CPC分类号： G02F1/3558
摘要： A method of patterning domains within a body of a ferroelectric material includes the application of an electric field thereto via spaced conductors. Prior to applying the electric field to the material effects on the patterning of the existence of fringe electric field components which will be created in said body by said application of an electric field, surface treatments, and relative geometries of the body and the conductors are examined. The steps of this examination include:(a) characterizing the ferroelectric material byfirst measuring the breakdown field as a function of pulse width,determining the domain wall velocity as a function of electric field strength while simultaneously measuring the nucleation statistics,determining the hysteresis of the body relative to several candidate frequencies, andmeasuring the spontaneous polarization in the body, and the body's conductivity and permittivity;(b) characterizing various possible surface treatments bymeasuring the ferroelectric properties for the surface treatments, andidentifying a desired surface treatment with the most extreme values of .eta.v.sup.2 (E), wherein .eta. is the nucleation rate, v is the velocity at which the surface is patterned and E is the electric field,(c) selecting said relative geometries to minimize the formation of fringe electric field components formed in said body by the electric field application; and(d) applying the desired surface treatment to the body.
摘要翻译：在铁电材料的主体内构图区域的方法包括通过间隔的导体向其施加电场。在将电场应用于对通过施加电场在所述主体中产生的边缘电场分量的存在的图案化的材料效应之后，检查物体和导体的表面处理和相对几何形状。该检查的步骤包括：（a）通过首先测量击穿场作为脉冲宽度的函数来表征铁电材料，确定畴壁速度作为电场强度的函数，同时测量成核统计，确定磁滞身体相对于几个候选频率，并测量身体的自发极化，以及身体的电导率和介电常数; （b）通过测量表面处理的铁电性能来表征各种可能的表面处理，并用eta v2（E）的最极值来鉴定所需的表面处理，其中η是成核速率，v是表面被图案化并且E是电场，（c）选择所述相对几何形状以通过电场施加使形成在所述主体中的条纹电场分量的形成最小化; 和（d）对身体施加所需的表面处理。

35. 发明授权

US6013221A Electric field domain patterning 失效
标题翻译：电场域图案化
公开(公告)号：US6013221A
公开(公告)日：2000-01-11
申请号：US78301
申请日：1998-05-13
申请人： Robert L. Byer , Martin M. Fejer , Gregory D. Miller , Lawrence E. Myers
发明人： Robert L. Byer , Martin M. Fejer , Gregory D. Miller , Lawrence E. Myers
IPC分类号： G02F1/355 , B29C35/02
CPC分类号： G02F1/3558
摘要： A method of domain patterning a body of ferroelectric material is disclosed. This method includes patterning the surface of the material with conducting strips for applying an electric field of desired configuration to said body and covering the conductive strips and surface of the body with insulating material to control the fringe electric field components in the body of ferromagnetic material.
摘要翻译：公开了一种对铁电体材料进行构图的方法。该方法包括用导电条图案化材料的表面，用于将所需构造的电场施加到所述主体并用绝缘材料覆盖主体的导电条和表面以控制铁磁材料主体中的边缘电场分量。

36. 发明授权

US5530541A Atomic absorption apparatus using a phase-modulated light beam 失效
标题翻译：使用相位调制光束的原子吸收装置
公开(公告)号：US5530541A
公开(公告)日：1996-06-25
申请号：US396215
申请日：1995-02-28
申请人： Charles H. Ahn , Malcolm R. Beasley , Steven J. Benerofe , Martin M. Fejer , Robert H. Hammond , Weizhi Wang
发明人： Charles H. Ahn , Malcolm R. Beasley , Steven J. Benerofe , Martin M. Fejer , Robert H. Hammond , Weizhi Wang
IPC分类号： G01J3/433 , G01N21/31 , G01N21/39
CPC分类号： G01N21/3103 , G01J3/4338
摘要： An atomic absorption apparatus using a laser for producing a light beam having a characteristic frequency f, typically ranging from several MHz to several GHz, and a characteristic polarization for measuring the absorption of that light beam by atoms of interest. The apparatus has a modulator to generate a modulating signal to modulate the characteristic frequency f and produce a phase-modulated light beam. The apparatus includes a domain where the specific atoms are located. This domain is positioned in the path of the phase-modulated light beam such that the phase-modulated light beam encounters the specific atoms when passing through the domain and some of the specific atoms absorb a portion of the phase-modulated light beam. Typically, the domains containing the atoms of interest include process chambers for vacuum coating, ion milling, sputtering, mass spectroscopy vapor coating or deposition, and the like. The amount of light absorbed depends on the motion of the atoms relative to the phase-modulated light beam.
摘要翻译：一种使用激光产生具有特征频率f（通常为几MHz至几GHz）的光束的原子吸收装置，以及用于测量该光束被感兴趣原子吸收的特征极化。该装置具有调制器以产生调制信号以调制特征频率f并产生相位调制光束。该装置包括特定原子所在的区域。该域位于相位调制光束的路径中，使得相位调制光束在通过畴时遇到特定原子，并且一些特定原子吸收相位调制光束的一部分。通常，包含感兴趣原子的结构域包括用于真空涂覆，离子研磨，溅射，质谱法蒸镀或沉积的处理室。吸收的光量取决于原子相对于相位调制光束的运动。

37. 发明授权

US5227911A Monolithic total internal reflection optical resonator 失效
标题翻译：单片全内反射光谐振器
公开(公告)号：US5227911A
公开(公告)日：1993-07-13
申请号：US843132
申请日：1992-02-28
申请人： Stephan Schiller , Martin M. Fejer , Andreas Sizmann , Robert L. Byer
发明人： Stephan Schiller , Martin M. Fejer , Andreas Sizmann , Robert L. Byer
IPC分类号： G01J3/00 , G01J3/42 , G01J9/00 , G01R23/17 , G02B6/34 , G02F1/35 , G02F1/37 , G02F1/39
CPC分类号： G02F1/37 , G01J3/42 , G01R23/17 , G02B6/34 , G01J3/0205 , G02F1/39 , G02F2001/3542
摘要： The combination of a resonator having total internal reflection with a coupler providing coupling via frustrated total internal reflection. Both linear and non-linear embodiments are described. The linear embodiment is a spectrum analyzer. The non-linear embodiment is a second harmonic generator, although modifications are described for turning the same into an optical parametric oscillator.
摘要翻译：具有全内反射的共振器与耦合器的耦合通过沮丧的全内反射而提供耦合。描述线性和非线性实施例。线性实施例是频谱分析仪。非线性实施例是二次谐波发生器，尽管描述了将其转换成光参量振荡器的修改。

38. 发明授权

US4880297A Quantum well optical electric field biased nonlinear method and apparatus 失效
标题翻译：量子阱光电场偏置非线性方法和装置
公开(公告)号：US4880297A
公开(公告)日：1989-11-14
申请号：US109054
申请日：1987-10-15
申请人： Martin M. Fejer , Robert L. Byer
发明人： Martin M. Fejer , Robert L. Byer
IPC分类号： G02F1/355
CPC分类号： B82Y20/00 , G02F1/3556
摘要： Optically transparent quantum well structures, such as GaAs/Al.sub.0.5 Ga.sub.0.5 As, are electrically biased to produce a quadratic nonlinear optical susceptibility, the sign of which depends on the direction of the applied electric bias field. This quadratic nonlinear optical susceptibility is particularly useful for enhancing three-wave interactions especially when the applied bias field is made spatially periodic to obtain quasiphasematched interaction. Also, the quantum well material is preferably arranged in an optical waveguide for guiding the interacting waves to reduce unwanted diffraction effects.
摘要翻译：诸如GaAs / Al0.5Ga0.5As的光学透明量子阱结构被电偏置以产生二次非线性光学敏感性，其符号取决于施加的电偏置场的方向。这种二次非线性光学敏感性对于增强三波相互作用特别有用，特别是当施加的偏置场在空间周期性地获得准共振相互作用时。此外，量子阱材料优选地布置在光波导中，用于引导相互作用的波以减少不想要的衍射效应。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式