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31. 发明授权

US07212288B2 Position modulated optical reflectance measurement system for semiconductor metrology 有权
标题翻译：用于半导体测量的位置调制光反射测量系统
公开(公告)号：US07212288B2
公开(公告)日：2007-05-01
申请号：US10886110
申请日：2004-07-07
申请人： Jon Opsal , Lena Nicolaides , Alex Salnik
发明人： Jon Opsal , Lena Nicolaides , Alex Salnik
IPC分类号： G01N21/55
CPC分类号： G01N21/9501 , G01N21/1717 , G01N21/9505
摘要： A system for evaluating semiconductor wafers includes illumination sources for generating probe and pump beams. The pump beam is focused on the surface of a sample and a beam steering mechanism is used to modulate the point of focus in a predetermined pattern. The moving pump beam introduces thermal and plasma waves in the sample causing changes in the reflectivity of the surface of the sample. The probe beam is focused within or adjacent to the area illuminated by the pump beam. The reflected probe beam is gathered and used to measure the changes in reflectivity induced by the pump beam. By analyzing changes in reflectivity, a processor is able to deduce structure and chemical details of the sample.
摘要翻译：用于评估半导体晶片的系统包括用于产生探针和泵浦光束的照明源。泵浦光束聚焦在样品的表面上，并且使用光束转向机构以预定图案调制聚焦点。移动的泵浦光束在样品中引入热和等离子体波，导致样品表面的反射率的变化。探测光束聚焦在由泵浦光束照射的区域内或附近。反射的探测光束被聚集并用于测量由泵浦光引起的反射率的变化。通过分析反射率的变化，处理器能够推断样品的结构和化学细节。

32. 发明申请

US20070008541A1 Modulated reflectance measurement system using UV probe 有权
标题翻译：使用紫外探测器的调制反射测量系统
公开(公告)号：US20070008541A1
公开(公告)日：2007-01-11
申请号：US11520512
申请日：2006-09-13
申请人： Jon Opsal , Lena Nicolaides , Alex Salnik , Allan Rosencwaig
发明人： Jon Opsal , Lena Nicolaides , Alex Salnik , Allan Rosencwaig
IPC分类号： G01N21/55
CPC分类号： G01N21/636 , G01N21/1717
摘要： A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.
摘要翻译：调制反射测量系统包括用于产生强度调制泵浦光束和UV探测光束的激光器。泵和探针光束聚焦在样品内的测量位置。泵浦光束周期性地激发测量位置，并且调制被赋予探测光束。对于一个实施例，选择探针光束的波长以对应于样品的温度反射系数的局部最大值。对于第二实施例，探针激光器被调谐以使对热探测波束调制的热波贡献最小化，或者使得等离子体波对探测光束调制的贡献均衡。

33. 发明申请

US20060262314A1 Modulated reflectance measurement system with multiple wavelengths 有权
公开(公告)号：US20060262314A1
公开(公告)日：2006-11-23
申请号：US11492583
申请日：2006-07-25
申请人： Lena Nicolaides , Jeffrey Fanton , Alex Salnik , Jon Opsal
发明人： Lena Nicolaides , Jeffrey Fanton , Alex Salnik , Jon Opsal
IPC分类号： G01N21/55
CPC分类号： G01N21/39 , G01N21/1717 , G01N21/55 , G01N21/636 , G01N21/9501 , G01N2201/0612 , G01N2201/0691
摘要： A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.

34. 发明授权

US07126690B2 Modulated reflectance measurement system using UV probe 有权
标题翻译：使用紫外探测器的调制反射测量系统
公开(公告)号：US07126690B2
公开(公告)日：2006-10-24
申请号：US10659626
申请日：2003-09-10
申请人： Jon Opsal , Lena Nicolaides , Alex Salnik , Allan Rosencwaig
发明人： Jon Opsal , Lena Nicolaides , Alex Salnik , Allan Rosencwaig
IPC分类号： G01N21/55
CPC分类号： G01N21/636 , G01N21/1717
摘要： A modulated reflectance measurement system includes lasers for generating an intensity modulated pump beam and a UV probe beam. The pump and probe beams are focused on a measurement site within a sample. The pump beam periodically excites the measurement site and the modulation is imparted to the probe beam. For one embodiment, the wavelength of the probe beam is selected to correspond to a local maxima of the temperature reflectance coefficient of the sample. For a second embodiment, the probe laser is tuned to either minimize the thermal wave contribution to the probe beam modulation or to equalize the thermal and plasma wave contributions to the probe beam modulation.
摘要翻译：调制反射测量系统包括用于产生强度调制泵浦光束和UV探测光束的激光器。泵和探针光束聚焦在样品内的测量位置。泵浦光束周期性地激发测量位置，并且调制被赋予探测光束。对于一个实施例，选择探针光束的波长以对应于样品的温度反射系数的局部最大值。对于第二实施例，探针激光器被调谐以使对热探测波束调制的热波贡献最小化，或者使得等离子体波对探测光束调制的贡献均衡。

35. 发明授权

US06989899B2 Ion implant monitoring through measurement of modulated optical response 有权
标题翻译：通过测量调制光学响应的离子注入监测
公开(公告)号：US06989899B2
公开(公告)日：2006-01-24
申请号：US10387259
申请日：2003-03-12
申请人： Alex Salnik , Lena Nicolaides , Jon Opsal
发明人： Alex Salnik , Lena Nicolaides , Jon Opsal
IPC分类号： G01N21/00 , G01N21/55
CPC分类号： G01N21/276 , G01N21/1717 , G01N21/55 , G01N2021/3568
摘要： A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.
摘要翻译：在离子注入的半导体中同时监测离子注入剂量，损伤和/或掺杂剂深度分布的方法包括校准步骤，其中在I-Q空间中识别已知损伤谱的光调制反射率。在随后的测量步骤中，经验地测量受试者的光调制反射率以获得同相和正交值。然后在I-Q空间中将同相和正交值与已知的损伤特征进行比较，以表征受试者的损伤特征。

36. 发明申请

US20120256559A1 LED Solar Illuminator 失效
标题翻译： LED太阳能照明器
公开(公告)号：US20120256559A1
公开(公告)日：2012-10-11
申请号：US13081734
申请日：2011-04-07
申请人： Guoheng Zhao , Ady Levy , Alex Salnik , Mehdi Vaez-Iravani , Lena Nicolaides , Samuel S.H. Ngai
发明人： Guoheng Zhao , Ady Levy , Alex Salnik , Mehdi Vaez-Iravani , Lena Nicolaides , Samuel S.H. Ngai
IPC分类号： H05B37/02
CPC分类号： H05B33/0803
摘要： An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.
摘要翻译：一种用于照射目标表面的装置，该装置具有多个LED阵列，其中每个阵列具有多个独立可寻址的LED，并且其中至少一个阵列以大约四十五度之间的角度设置并且相对于目标表面大约九十度，其中所有的阵列将光提供到光管中，光管具有由反射材料制成的内壁，其中离开光管的光照射目标表面，以及用于调节的控制器独立寻址光源的强度。

37. 发明授权

US08415961B1 Measuring sheet resistance and other properties of a semiconductor 有权
标题翻译：测量薄膜电阻等半导体性能
公开(公告)号：US08415961B1
公开(公告)日：2013-04-09
申请号：US12961932
申请日：2010-12-07
申请人： Guoheng Zhao , Alex Salnik , Lena Nicolaides , Ady Levy
发明人： Guoheng Zhao , Alex Salnik , Lena Nicolaides , Ady Levy
IPC分类号： G01R27/08 , G01R31/308
CPC分类号： G01R31/2656 , G01R31/2648
摘要： A method may include illuminating a first area of a semiconductor utilizing a light source. The method may also include measuring at least one characteristic of electrical energy transmission utilizing a probe for placing at least one of at or near the illuminated first area of the semiconductor. The method may further include varying the measured at least one characteristic of the electrical energy transmission generated by the light from the light source incident upon the semiconductor while maintaining an intensity of the light source. Further, the method may include determining a sheet resistance for the junction of the semiconductor utilizing the varied at least one characteristic of the electrical energy transmission.
摘要翻译：一种方法可以包括利用光源照射半导体的第一区域。该方法还可以包括利用探针来测量电能传输的至少一个特征，所述探针用于放置半导体照明的第一区域中或其附近的至少一个。该方法还可以包括改变由入射到半导体上的来自光源的光产生的电能传输的测量的至少一个特性，同时保持光源的强度。此外，该方法可以包括利用电能传输的变化的至少一个特性来确定半导体的结的薄层电阻。

38. 发明授权

US08120776B1 Measuring characteristics of ultra-shallow junctions 失效
标题翻译：超浅结点的测量特性
公开(公告)号：US08120776B1
公开(公告)日：2012-02-21
申请号：US12545015
申请日：2009-08-20
申请人： Alex Salnik , Lena Nicolaides
发明人： Alex Salnik , Lena Nicolaides
IPC分类号： G01N21/55
CPC分类号： G01N21/1717 , G01N2021/1725
摘要： Carrier activation and end-of-range defect density of ultra-shallow junctions in integrated circuits are determined using modulated optical reflectance signals, DC reflectances of pump or probe laser beams, and in-phase and quadrature signal processing. A method for determining characteristics of an ultra-shallow junction includes periodically exciting a region of the substrate using a pump laser beam, and reflecting a probe laser beam from the excited region. A modulated optical reflectance signal is measured along with DC reflectance of the probe laser beam. The modulated optical reflectance signal and DC reflectance are compared with reference signals generated from calibration substrates to determine carrier activation and end-of-range defect density in the junction.
摘要翻译：使用调制的光反射信号，泵浦或探针激光束的直流反射以及同相和正交信号处理来确定集成电路中超浅结的载流子激活和终端缺陷密度。用于确定超浅结的特性的方法包括使用泵浦激光束周期性地激励基板的区域，并且反射来自激发区域的探测激光束。测量调制的光反射信号与探测激光束的直流反射率一起测量。将调制的光反射信号和DC反射率与从校准基板产生的参考信号进行比较，以确定接合处的载流子激活和端部范围缺陷密度。

39. 发明授权

US08436554B2 LED solar illuminator 失效
标题翻译： LED太阳能照明灯
公开(公告)号：US08436554B2
公开(公告)日：2013-05-07
申请号：US13081734
申请日：2011-04-07
申请人： Guoheng Zhao , Ady Levy , Alex Salnik , Mehdi Vaez-Iravani , Lena Nicolaides , Samuel S. H. Ngai
发明人： Guoheng Zhao , Ady Levy , Alex Salnik , Mehdi Vaez-Iravani , Lena Nicolaides , Samuel S. H. Ngai
IPC分类号： G05F1/00 , H05B37/02 , H05B39/04 , H05B41/36
CPC分类号： H05B33/0803
摘要： An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.
摘要翻译：一种用于照射目标表面的装置，该装置具有多个LED阵列，其中每个阵列具有多个独立可寻址的LED，并且其中至少一个阵列以大约四十五度之间的角度设置并且相对于目标表面大约九十度，其中所有的阵列将光提供到光管中，光管具有由反射材料制成的内壁，其中离开光管的光照射目标表面，以及用于调节的控制器独立寻址光源的强度。

40. 发明授权

US06917039B2 Method and system for combined photothermal modulated reflectance and photothermal IR radiometric system 有权
公开(公告)号：US06917039B2
公开(公告)日：2005-07-12
申请号：US10315588
申请日：2002-12-10
申请人： Lena Nicolaides , Alex Salnik
发明人： Lena Nicolaides , Alex Salnik
IPC分类号： G01N21/17 , G01N21/95 , G01N25/72 , G01N21/88
CPC分类号： G01N21/1717 , G01N21/171 , G01N21/9501
摘要： A method and apparatus for evaluating a semiconductor wafer. A combination of a photothermal modulated reflectance method and system with a photothermal IR radiometry system and method is utilized to provide information which can be used to determine properties of semiconductor wafers being evaluated. The system and method can provide for utilizing a common probe source and a common intensity modulated energy source. The system and method further provide an infrared detector for monitoring changes in infrared radiation emitted from a sample, and photodetector for monitoring changes in beam reflected from the sample.

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