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    • 32. 发明授权
    • Flash storage system with write-erase abort detection mechanism
    • 闪存存储系统具有写擦除中止检测机制
    • US07669004B2
    • 2010-02-23
    • US11936440
    • 2007-11-07
    • Jason T. LinKevin M. ConleyRobert C. Chang
    • Jason T. LinKevin M. ConleyRobert C. Chang
    • G06F12/00
    • G11C16/0416G11C16/10G11C16/105G11C2216/16
    • The present invention presents a non-volatile memory and method for its operation that ensures reliable mechanism for write and erase abort detection in the event of lost of power during non-volatile memory programming and erasing with minimized system performance penalty. During a multi-sector write process, an indication of a successful write in one sector is written into the overhead of the following sector at the same time as the following sector's data content is written. The last sector written will additionally have an indication of its own successful write written into its overhead. For erase, an erase abort flag in the first sector of the block can be marked after a successful erase operation.
    • 本发明提供了一种用于其操作的非易失性存储器和方法,其确保在非易失性存储器编程和擦除期间由于在最小化的系统性能损失下的擦除而导致的写入和擦除中止检测的可靠机制。 在多扇区写入过程中,在写入下一个扇区的数据内容的同时,在一个扇区中成功写入的指示被写入下一个扇区的开销。 写入的最后一个部分将另外显示自己的成功写入写入其开销。 为了擦除,可以在成功擦除操作之后标记块的第一个扇区中的擦除中止标志。
    • 33. 发明授权
    • Methods of end of life calculation for non-volatile memories
    • 非易失性存储器寿命计算方法
    • US07523013B2
    • 2009-04-21
    • US11383384
    • 2006-05-15
    • Sergey Anatolievich GorobetsKevin M. Conley
    • Sergey Anatolievich GorobetsKevin M. Conley
    • G06F3/01
    • G06F11/008G11C16/349G11C16/3495
    • A system and methods are given for providing information on the amount of life remaining for a memory having a limited lifespan, such as a flash memory card. For example, it can provide a user with the amount of the memory's expected remaining lifetime in real time units (i.e., hours or days) or as a percentage of estimated initial life. An end of life warning can also be provided. In a particular embodiment, the amount of remaining life (either as a percentage or in real time units) can be based on the average number of erases per block, but augmented by the number of spare blocks or other parameters, so that an end of life warning is given if either the expected amount of remaining life falls below a certain level or the number of spare blocks falls below a safe level.
    • 给出了提供关于具有有限寿命的存储器(例如闪存卡)的剩余寿命的信息的系统和方法。 例如,它可以向用户提供实时单位(即,小时或天)中的存储器的预期剩余寿命的量,或作为估计的初始寿命的百分比。 也可以提供生命警告的结束。 在特定实施例中,剩余寿命的量(以百分比或实时单位计)可以基于每个块的平均擦除次数,但是增加了备用块的数量或其他参数,使得结束 如果预期的剩余生命量低于一定水平或备用块数量低于安全水平,则会发出生命警告。
    • 37. 发明授权
    • Writable tracking cells
    • 可追踪单元格
    • US07301807B2
    • 2007-11-27
    • US11064529
    • 2005-02-22
    • Shahzad B. KhalidDaniel C. GutermanGeoffrey S. GongwerRichard SimkoKevin M. Conley
    • Shahzad B. KhalidDaniel C. GutermanGeoffrey S. GongwerRichard SimkoKevin M. Conley
    • G11C11/34G11C16/04
    • G11C7/14G11C7/06G11C11/5642G11C27/005G11C2211/5634
    • The present invention presents several techniques for using writable tracking cells. Multiple tracking cells are provided for each write block of the memory. These cells are re-programmed each time the user cells of the associated write block are written, preferably at the same time, using the same fixed, global reference levels to set the tracking and user cell programmed thresholds. The threshold voltages of the tracking cells are read every time the user cells are read, and these thresholds are used to determine the stored logic levels of the user cells. In one set of embodiments, populations of one or more tracking cells are associated with different logic levels of a multi-state memory. These tracking cell populations may be provided for only a subset of the logic levels. The read points for translating the threshold voltages are derived for all of the logic levels based upon this subset. In one embodiment, two populations each consisting of multiple tracking cells are associated with two logic levels of the multi-bit cell. In an analog implementation, the user cells are read directly using the analog threshold values of the tracking cell populations without their first being translated to digital values. A set of alternate embodiments provide for using different voltages and/or timing for the writing of tracking cells to provide less uncertainty in the tracking cells' final written thresholds.
    • 本发明提出了使用可写跟踪单元的几种技术。 为存储器的每个写入块提供多个跟踪单元。 每当相关联的写入块的用户单元被优选地同时使用相同的固定的全局参考电平来写入时,这些单元被重新编程,以设置跟踪和用户单元编程的阈值。 每次读取用户单元时,读取跟踪单元的阈值电压,并且这些阈值用于确定用户单元的存储的逻辑电平。 在一组实施例中,一个或多个跟踪单元的群体与多状态存储器的不同逻辑电平相关联。 这些跟踪单元群可以仅提供逻辑电平的子集。 基于该子集,针对所有逻辑电平导出用于转换阈值电压的读取点。 在一个实施例中,由多个跟踪单元组成的两个群组与多位单元的两个逻辑电平相关联。 在模拟实现中,使用跟踪单元格群体的模拟阈值直接读取用户单元,而不首先将其转换为数字值。 一组替代实施例提供使用不同的电压和/或定时来跟踪单元的写入,以便在跟踪单元的最终写入阈值中提供较小的不确定性。
    • 38. 发明授权
    • Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
    • 闪存EEPROM系统具有同时多个数据扇区编程和存储其他指定块中的物理块特性
    • US07184306B2
    • 2007-02-27
    • US11323576
    • 2005-12-29
    • Kevin M. ConleyJohn S. ManganJeffrey G. Craig
    • Kevin M. ConleyJohn S. ManganJeffrey G. Craig
    • G11C16/04
    • G11C16/107G06F12/0246G06F2212/7203G06F2212/7207G06F2212/7208G11C16/10G11C16/3459G11C29/82G11C2216/14
    • A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These characteristics for user data blocks being accessed may, during operation of the memory system by its controller, be stored in a random access memory for ease of access and updating. According to another feature, multiple sectors of user data are stored at one time by alternately streaming chunks of data from the sectors to multiple memory blocks. Bytes of data in the stream may be shifted to avoid defective locations in the memory such as bad columns. Error correction codes may also be generated from the streaming data with a single generation circuit for the multiple sectors of data. The stream of data may further be transformed in order to tend to even out the wear among the blocks of memory. Yet another feature, for memory systems having multiple memory integrated circuit chips, provides a single system record that includes the capacity of each of the chips and assigned contiguous logical address ranges of user data blocks within the chips which the memory controller accesses when addressing a block, making it easier to manufacture a memory system with memory chips having different capacities. A typical form of the memory system is as a card that is removably connectable with a host system but may alternatively be implemented in a memory embedded in a host system. The memory cells may be operated with multiple states in order to store more than one bit of data per cell.
    • 非易失性存储器系统由以块为单位布置的浮动栅极存储单元形成为可以一起可擦除的最小单元的存储器单元。 该系统包括可以单独地或以各种协作组合实现的多个特征。 一个特征是在单独的块中存储其中存储用户数据的大量小区块的特性。 正在访问的用户数据块的这些特征可以在存储器系统由其控制器操作期间被存储在随机存取存储器中以便于访问和更新。 根据另一特征,通过将来自扇区的数据块交替地流向多个存储块,一次存储多个扇区的用户数据。 可以移动流中的数据字节以避免存储器中的不良位置,例如不良列。 也可以通过用于多扇区数据的单一生成电路从流数据生成纠错码。 可以进一步转换数据流,以便趋向于均匀地消除存储器块之间的磨损。 对于具有多个存储器集成电路芯片的存储器系统,又一特征提供了单个系统记录,该系统记录包括每个芯片的容量,并且在寻址块时存储器控制器访问的芯片内分配的用户数据块的连续逻辑地址范围 ,使得容易制造具有不同容量的存储器芯片的存储器系统。 存储器系统的典型形式是可拆卸地与主机系统连接的卡,但是也可以在嵌入在主机系统中的存储器中实现。 存储器单元可以以多种状态操作,以便存储每个单元的多于一位的数据。
    • 40. 发明授权
    • Writable tracking cells
    • 可追踪单元格
    • US06538922B1
    • 2003-03-25
    • US09671793
    • 2000-09-27
    • Shahzad B. KhalidDaniel C. GutermanGeoffrey S. GongwerRichard SimkoKevin M. Conley
    • Shahzad B. KhalidDaniel C. GutermanGeoffrey S. GongwerRichard SimkoKevin M. Conley
    • G11C1604
    • G11C16/28G11C7/06G11C11/56G11C11/5621G11C11/5628G11C11/5642G11C27/005G11C2211/5621G11C2211/5634
    • The present invention presents several techniques for using writable tracking cells. Multiple tracking cells are provided for each write block of the memory. These cells are re-programmed each time the user cells of the associated write block are written, preferably at the same time, using the same fixed, global reference levels to set the tracking and user cell programmed thresholds. The threshold voltages of the tracking cells are read every time the user cells are read, and these thresholds are used to determine the stored logic levels of the user cells. In one set of embodiments, populations of one or more tracking cells are associated with different logic levels of a multi-state memory. These tracking cell populations may be provided for only a subset of the logic levels. The read points for translating the threshold voltages are derived for all of the logic levels based upon this subset. In one embodiment, two populations each consisting of multiple tracking cells are associated with two logic levels of the multi-bit cell. In an analog implementation, the user cells are read directly using the analog threshold values of the tracking cell populations without their first being translated to digital values. A set of alternate embodiments provide for using different voltages and/or timing for the writing of tracking cells to provide less uncertainty in the tracking cells' final written thresholds.
    • 本发明提出了使用可写跟踪单元的几种技术。 为存储器的每个写入块提供多个跟踪单元。 每当相关联的写入块的用户单元被优选地同时使用相同的固定的全局参考电平来写入时,这些单元被重新编程,以设置跟踪和用户单元编程的阈值。 每次读取用户单元时,读取跟踪单元的阈值电压,并且这些阈值用于确定用户单元的存储的逻辑电平。 在一组实施例中,一个或多个跟踪单元的群体与多状态存储器的不同逻辑电平相关联。 这些跟踪单元群可以仅提供逻辑电平的子集。 基于该子集,针对所有逻辑电平导出用于转换阈值电压的读取点。 在一个实施例中,由多个跟踪单元组成的两个群组与多位单元的两个逻辑电平相关联。 在模拟实现中,使用跟踪单元格群体的模拟阈值直接读取用户单元,而不首先将其转换为数字值。 一组替代实施例提供使用不同的电压和/或定时来跟踪单元的写入,以便在跟踪单元的最终写入阈值中提供较小的不确定性。