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31. 发明申请

US20070052041A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070052041A1
公开(公告)日：2007-03-08
申请号：US10558671
申请日：2004-05-31
申请人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Yoshihiko Kanzawa , Kouji Katayama , Junko Iwanaga
发明人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Yoshihiko Kanzawa , Kouji Katayama , Junko Iwanaga
IPC分类号： H01L29/94
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/78687
摘要： A semiconductor device according to this invention includes: a first insulating layer (11); a first body section (13) including an island-shaped semiconductor formed on the first insulating layer; a second body section (14) including an island-shaped semiconductor formed on the first insulating layer; a ridge-shaped connecting section (15) formed on the first insulating layer to interconnect the first body section and the second body section; a channel region (15a) formed by at least a part of the connecting section in lengthwise direction of the connecting section; a gate electrode (18) formed to cover a periphery of the channel region, with a second insulating layer intervening therebetween; a source region formed to extend over the first body section and a portion of the connecting section between the first body section and the channel region; and a drain region formed to extend over the second body section and a portion of the connecting section between the second body section and the channel region, wherein a semiconductor forming the channel region has a lattice strain.
摘要翻译：根据本发明的半导体器件包括：第一绝缘层（11）; 第一主体部分（13），其包括形成在所述第一绝缘层上的岛状半导体; 包括形成在所述第一绝缘层上的岛状半导体的第二主体部分（14）形成在第一绝缘层上以互连第一主体部分和第二主体部分的脊形连接部分（15）; 由所述连接部的至少一部分在所述连接部的长度方向上形成的通路区域（15a）形成为覆盖沟道区域的周边的栅极电极（18），其间插入有第二绝缘层; 形成为在第一主体部分上延伸的源极区域和在第一主体部分和沟道区域之间的连接部分的一部分; 以及形成为在第二主体部分上延伸的漏极区域和在第二主体部分和沟道区域之间的连接部分的一部分，其中形成沟道区域的半导体具有晶格应变。

32. 发明申请

US20060054944A1 Semiconductor device and process for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060054944A1
公开(公告)日：2006-03-16
申请号：US11260197
申请日：2005-10-28
申请人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Akira Inoue
发明人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Akira Inoue
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/78696 , H01L21/76264 , H01L21/76281 , H01L29/1054 , H01L29/66742 , H01L29/78687 , Y10S438/933 , Y10S438/938
摘要： The present invention provides a semiconductor device comprising: a semiconductor layer (3); a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10); and a first insulation film (13) formed at one or more of sidewalls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11); wherein the first insulation film (13) overlies a part of the gate insulation film (10) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.
摘要翻译：本发明提供一种半导体器件，包括：半导体层（3）; 经由栅极绝缘膜（10）形成在所述半导体层（3）上的栅电极（11）; 以及形成在所述半导体层（3），所述栅极绝缘膜（10）和所述栅电极（11）的侧壁的一个或多个的第一绝缘膜（13）。其中所述第一绝缘膜（13）覆盖所述栅极绝缘膜（10）表面的一部分。根据半导体装置，可以抑制隔离边缘处的漏电流，从而可以提高可靠性。

33. 发明授权

US06893934B2 Bipolar transistor device having phosphorous 失效
标题翻译：具有磷的双极晶体管器件
公开(公告)号：US06893934B2
公开(公告)日：2005-05-17
申请号：US10603737
申请日：2003-06-26
申请人： Teruhit Ohnishi , Akira Asai
发明人： Teruhit Ohnishi , Akira Asai
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/165 , H01L29/732 , H01L29/737
CPC分类号： H01L29/66242 , H01L29/7378
摘要： A Si1-xGex layer 111b functioning as the base composed of an i—Si1-xGex layer and a p+ Si1-xGex layer is formed on a collector layer 102, and a Si cap layer 111a as the emitter is formed on the p+ Si1-xGex layer. An emitter lead electrode 129, which is composed of an n− polysilicon layer 129b containing phosphorus in a concentration equal to or lower than the solid-solubility limit for single-crystal silicon and a n+ polysilicon layer 129a containing phosphorus in a high concentration, is formed on the Si cap layer 111a in a base opening 118. The impurity concentration distribution in the base layer is properly maintained by suppressing the Si cap layer 111a from being doped with phosphorus (P) in an excessively high concentration. The upper portion of the Si cap layer 111a may contain a p-type impurity. The p-type impurity concentration distribution in the base layer of an NPN bipolar transistor is thus properly maintained.
摘要翻译：作为由i-Si 1-x Ge x x构成的基底的Si 1-x Ge 2 x层111b， / SUB层，并且在集电极层102上形成有Si + 1-xSi Ge层，并且Si覆盖层111a 因为发射极形成在p + 1 Si 1-x Ge层上。发射极引线电极129，其由含有等于或低于单晶硅的固溶度极限的磷的N +和/或多个多晶硅层129b组成，在基底开口118中的Si覆盖层111a上形成含有高浓度磷的多晶硅层129a。通过抑制Si覆盖层111a以过高的浓度掺杂磷（P）来适当地维持基层中的杂质浓度分布。 Si覆盖层111a的上部可以含有p型杂质。因此，适当地维持NPN双极晶体管的基极层中的p型杂质浓度分布。

34. 发明申请

US20050092230A1 Method for fabricating a semiconductor crystal 失效
标题翻译：半导体晶体的制造方法
公开(公告)号：US20050092230A1
公开(公告)日：2005-05-05
申请号：US11009020
申请日：2004-12-13
申请人： Yoshihiko Kanzawa , Teruhito Ohnishi , Ken Idota , Tohru Saitoh , Akira Asai
发明人： Yoshihiko Kanzawa , Teruhito Ohnishi , Ken Idota , Tohru Saitoh , Akira Asai
IPC分类号： C30B1/00 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/205 , H01L21/31 , H01L21/322 , H01L21/324
CPC分类号： H01L21/324 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/02664 , H01L21/322 , Y10S438/933
摘要： A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (202), and a third step for removing the carbon atoms contained in the semiconductor crystal layer (202) by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.
摘要翻译：一种制造半导体晶体的方法，其具有在基板（201）上形成含有碳原子的半导体晶体层（202）和除了碳以外的至少一种第IV族元素的第一工序，第二工序用于添加能够与氧反应的半导体晶体层（202）的杂质，以及通过使碳与杂质反应来除去半导体结晶层（202）中所含的碳原子的第三工序。该方法可以制造其中间隙碳原子的浓度令人满意地降低的半导体晶体衬底，从而当将衬底应用于半导体器件时获得优异的电性能。

35. 发明授权

US06869971B1 UCS1025 derivatives 失效
标题翻译： UCS1025衍生品
公开(公告)号：US06869971B1
公开(公告)日：2005-03-22
申请号：US10110964
申请日：2000-10-19
申请人： Tsutomu Akama , Akira Asai , Tsutomu Agatsuma , Shinji Nara , Yoshinori Yamashita , Tamio Mizukami , Shun-ichi Ikeda , Yutaka Saitoh , Yutaka Kanda
发明人： Tsutomu Akama , Akira Asai , Tsutomu Agatsuma , Shinji Nara , Yoshinori Yamashita , Tamio Mizukami , Shun-ichi Ikeda , Yutaka Saitoh , Yutaka Kanda
IPC分类号： A61P31/04 , A61P35/00 , C07D487/04 , C07D487/14 , C07D487/16 , C07D491/14 , C07D491/147 , C07D491/16 , C07D498/08 , A61K31/403 , A61K31/4453 , C07D209/52 , C07D401/06
CPC分类号： C07D487/04 , C07D487/14 , C07D491/14
摘要： UCS 1025 derivatives having antitumor activity or antibacterial activity which are represented by formula (I): wherein R1 represents hydrogen, lower alkyl, etc.; R2 represents hydrogen, or is combined with R3 to represent a bond, etc., or is combined with R4 to represent —O(C═O)—, etc.; R3 represents hydrogen, etc., or is combined with R2 to represent a bond, etc.; R4 represents hydrogen, etc., or is combined with R2 to represent —(C═O)O—, etc.; R5 represents hydrogen or is combined with R6 to represent a bond; R6 represents hydrogen, etc., or is combined with R5 to represent a bond; R7 represents hydrogen or is combined with R8 to represent ═O; R8 represents hydroxy or is combined with R7 to represent ═O; ---- represents a single bond or a double bond, and a represents a single bond (two carbon atoms to which a is bound are combined to form a single bond) or an oxygen atom, or pharmaceutically acceptable salts thereof.
摘要翻译：由式（I）表示的具有抗肿瘤活性或抗菌活性的UCS 1025衍生物：其中R 1表示氢，低级烷基等; R 2表示氢，或与R 3结合以表示键等，或与R 4结合以表示-O（C = O） - 等; R 3表示氢等，或与R 2结合以表示键等; R 4表示氢等，或与R 2结合代表 - （C = O）O-等; R 5表示氢或与R 6结合以表示键; R 6表示氢等，或与R 5结合以表示键; R 7表示氢或与R 8结合以代表= O; R 8表示羟基或与R 7结合代表= O; ----表示单键或双键，a表示单键（被结合形成单键的两个碳原子）或氧原子，或其药学上可接受的盐。

36. 发明授权

US06674149B2 Bipolar transistor device having phosphorous 失效
标题翻译：具有磷的双极晶体管器件
公开(公告)号：US06674149B2
公开(公告)日：2004-01-06
申请号：US10009201
申请日：2001-12-10
申请人： Teruhito Ohnishi , Akira Asai
发明人： Teruhito Ohnishi , Akira Asai
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L29/7378
摘要： A Si1-xGex layer 111b functioning as the base composed of an i-Si1-xGex layer and a p+ Si1-xGex layer is formed on a collector layer 102, and a Si cap layer 111a as the emitter is formed on the p+ Si1-xGex layer. An emitter lead electrode 129, which is composed of an n− polysilicon layer 129b containing phosphorus in a concentration equal to or lower than the solid-solubility limit for single-crystal silicon and a n+ polysilicon layer 129a containing phosphorus in a high concentration, is formed on the Si cap layer 111a in a base opening 118. The impurity concentration distribution in the base layer is properly maintained by suppressing the Si cap layer 111a from being doped with phosphorus (P) in an excessively high concentration. The upper portion of the Si cap layer 111a may contain a p-type impurity. The p-type impurity concentration distribution in the base layer of an NPN bipolar transistor is thus properly maintained.
摘要翻译：在集电极层102上形成用作由i-Si1-xGex层和ap + Si1-xGex层构成的基底的Si1-xGex层111b，在p上形成作为发射极的Si覆盖层111a Si1-xGex层。发射极引线电极129，其由含有等于或低于单晶硅的固溶度极限的磷的n +多晶硅层129b和含有磷的多晶硅层129a组成在基底开口118中的Si覆盖层111a上形成高浓度。通过抑制Si覆盖层111a以过高的浓度掺杂磷（P）来适当地保持基底层中的杂质浓度分布。 Si覆盖层111a的上部可以含有p型杂质。因此，适当地维持NPN双极晶体管的基极层中的p型杂质浓度分布。

37. 发明授权

US06642607B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06642607B2
公开(公告)日：2003-11-04
申请号：US10061365
申请日：2002-02-04
申请人： Teruhito Ohnishi , Takeshi Takagi , Akira Asai , Taizo Fujii , Mitsuo Sugiura , Yoshihisa Minami
发明人： Teruhito Ohnishi , Takeshi Takagi , Akira Asai , Taizo Fujii , Mitsuo Sugiura , Yoshihisa Minami
IPC分类号： H01L2993
CPC分类号： H01L29/93 , H01L27/0664 , H01L27/0808
摘要： A variable capacitor includes an N+ layer including a variable capacitance region, a P+ layer epitaxially grown on the N+ layer and formed from a SiGe film and a Si film, and a P-type electrode. An NPN-HBT (Hetero-junction Bipolar Transistor) includes a collector diffusion layer formed simultaneously with the N+ layer of the variable capacitor, a collector layer, and a Si/SiGe layer epitaxially grown simultaneously with the P+ layer of the variable capacitor. Since a depletion layer formed in a PN junction of the variable capacitor can extend entirely across the N+ layer, reduction in variation range of the capacitance can be suppressed.
摘要翻译：可变电容器包括N +层，包括可变电容区，在N +层上外延生长并由SiGe膜和Si膜形成的P +层和P型电极。 NPN-HBT（异质结双极晶体管）包括与可变电容器的N +层同时形成的集电极扩散层，集电极层和与P +层同时外延生长的Si / SiGe层的可变电容器。由于形成在可变电容器的PN结中的耗尽层可以完全延伸穿过N +层，所以可以抑制电容的变化范围的减小。

38. 发明授权

US06595625B2 Liquid discharging method accompanied by the displacement of a movable member, a liquid jet head for implementing such method, and a liquid jet apparatus for the implementation thereof 失效
标题翻译：伴随可移动部件的移动的液体排出方法，用于实施这种方法的液体喷射头和用于实现该方法的液体喷射装置
公开(公告)号：US06595625B2
公开(公告)日：2003-07-22
申请号：US08889184
申请日：1997-07-07
申请人： Sadayuki Sugama , Akira Asai , Hiroyuki Ishinaga , Toshio Kashino , Kiyomitsu Kudo , Hiroyuki Sugiyama
发明人： Sadayuki Sugama , Akira Asai , Hiroyuki Ishinaga , Toshio Kashino , Kiyomitsu Kudo , Hiroyuki Sugiyama
IPC分类号： B41J205
CPC分类号： B41J2/14048 , B41J2/14129 , B41J2202/21
摘要： A liquid discharging method comprises the step of displacing the free end of the movable member following the creation of air bubble in the air bubble generating area. For this method, the fulcrum of the movable member is positioned on the side different from liquid discharging side with respect to the displacement area for the free end of the movable member to be displaceable, and at the same time, the free end thereof is arranged to face the effective bubbling area positioned on the downstream side of the central portion of the length of the effective bubbling area that forms the bubble generating area in the direction of the movable member from the fulcrum to the free end thereof, and a part of the effective bubbling area positioned to face the free end of the movable member on the downstream side of the effective bubbling area is arranged to face the displacement area directly. Thus, the initiation of the displacement of the free end of the movable member is effectuated quickly and reliably, and the pressure exerted by the air bubble creation is led to the discharge port side and the fulcrum side of the movable member sufficiently at the time of bubbling, and the development of air bubble that follows is directed to the discharge port side more reliably and efficiently.
摘要翻译：液体排放方法包括在气泡生成区域中产生气泡之后移动可动构件的自由端的步骤。对于该方法，可移动部件的支点相对于可移动部件的自由端的位移区域位于不同于液体排出侧的一侧上，并且同时其自由端被布置面对有效起泡区域，该有效起泡区域位于有效起泡区域的长度的中心部分的下游侧，该有效起泡区域在可动构件的方向上从支点到其自由端形成气泡产生区域，并且部分与有效起泡区域的下游侧的可动构件的自由端相对配置的有效鼓泡区域被配置为直接面对移动区域。因此，快速可靠地实现可动构件的自由端的移动的开始，并且由气泡产生所施加的压力在可动构件的排出口侧和支点侧充分地被引导到鼓泡，并且随后的气泡的发展更可靠和高效地引导到排出口侧。

39. 发明授权

US06447103B1 Liquid ejecting method, liquid ejecting head, head cartridge and liquid ejecting apparatus using same 失效
标题翻译：液体喷射方法，液体喷射头，头盒和使用其的液体喷射装置
公开(公告)号：US06447103B1
公开(公告)日：2002-09-10
申请号：US09617849
申请日：2000-07-17
申请人： Sadayuki Sugama , Akira Asai , Hiroyuki Ishinaga , Toshio Kashino , Kiyomitsu Kudo , Hiroyuki Sugiyama
发明人： Sadayuki Sugama , Akira Asai , Hiroyuki Ishinaga , Toshio Kashino , Kiyomitsu Kudo , Hiroyuki Sugiyama
IPC分类号： B41J205
CPC分类号： B41J2/14048 , B41J2002/14362
摘要： A liquid ejecting method includes displacing a movable member having a free end by bubble generation in a bubble generating region; the improvement residing in: that a fulcrum of said movable member is disposed adjacent to one side of a displacement region where the free end of said movable member displaces, and an ejection outlet through which the liquid is ejected is disposed adjacent to the opposite side of the displacement region; that there is provided a first period in which a displacing speed of the free end of the movable member is higher than a growing speed of the bubble generated in the bubble generating region toward the movable member, before the bubble reaches its maximum size.
摘要翻译：一种液体喷射方法，包括通过在气泡生成区域中产生气泡来移动具有自由端的可动件; 改进在于：所述可移动部件的支点设置成邻近所述可移动部件的自由端位移的位移区域的一侧，并且喷射出液体的喷射出口邻近于位移区域提供了在气泡达到其最大尺寸之前，可动构件的自由端的移动速度高于在气泡生成区域中朝向可动构件产生的气泡的生长速度的第一时段。

40. 发明授权

US06179279B2 Gripping device 失效
标题翻译：夹紧装置
公开(公告)号：US06179279B2
公开(公告)日：2001-01-30
申请号：US09271901
申请日：1999-03-18
申请人： Akira Asai , Takashi Asai , Yoshiro Asai
发明人： Akira Asai , Takashi Asai , Yoshiro Asai
IPC分类号： B25B102
CPC分类号： B25B1/103 , B25B1/10 , B25B1/20 , B25B1/241 , Y10S269/902
摘要： A gripper which is structurally simple and can reliably and quickly grip small articles of various different shapes. The gripper has a base including a fixed portion and a movable portion movable longitudinally toward and away from the fixed portion, a first gripper portion provided on the fixed portion, a second gripper portion provided on the movable portion, and a moving/fixing mechanism for gripping a small article of an indefinite shape by moving the second gripper portion toward the first gripper portion.
摘要翻译：夹具结构简单，能够可靠且快速地抓住各种不同形状的小物品。夹持器具有基部，其包括固定部分和可纵向移动和远离固定部分的可移动部分，设置在固定部分上的第一夹持器部分，设置在可移动部分上的第二夹持器部分，以及用于通过将第二夹持器部分朝向第一夹持器部分移动来夹紧不定形状的小物品。

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