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31. 发明申请

US20110032644A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 有权
标题翻译：用于提供具有通过覆盖层改善的性能的磁性隧道结构元件的方法和系统使用这种磁性元件诱导的各向异性和记忆
公开(公告)号：US20110032644A1
公开(公告)日：2011-02-10
申请号：US12538489
申请日：2009-08-10
申请人： Steven M. Watts , Zhitao Diao , Xueti Tang
发明人： Steven M. Watts , Zhitao Diao , Xueti Tang
IPC分类号： G11B5/127
CPC分类号： G01R33/098 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/325 , H01F41/34 , H01L43/08
摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。该方法和系统包括提供固定，非磁性间隔物和自由层。自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。非磁性间隔层位于被钉扎层和自由层之间。该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

32. 发明授权

US07859034B2 Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer 有权
标题翻译：具有邻近自由铁磁层的氧化物反铁磁层的磁性器件
公开(公告)号：US07859034B2
公开(公告)日：2010-12-28
申请号：US12425370
申请日：2009-04-16
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

33. 发明授权

US07851840B2 Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier 有权
标题翻译：基于利用多层屏障的磁隧道结的装置和电路
公开(公告)号：US07851840B2
公开(公告)日：2010-12-14
申请号：US11520868
申请日：2006-09-13
申请人： Zhitao Diao , Yiming Huai
发明人： Zhitao Diao , Yiming Huai
IPC分类号： H01L29/96 , H01L43/08
CPC分类号： H01L43/08 , G11C11/16
摘要： Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.
摘要翻译：具有磁或磁阻隧道结（MTJS）的器件具有多层绝缘体阻挡层，以在器件电路中产生平衡的写入开关电流，或者产生具有自旋转矩传递感应开关磁化所需的平衡临界自旋电流的磁性器件，或对于正向和反向偏置方向的MTJ都是这样。

34. 发明授权

US07777261B2 Magnetic device having stabilized free ferromagnetic layer 有权
标题翻译：具有稳定的自由铁磁层的磁性装置
公开(公告)号：US07777261B2
公开(公告)日：2010-08-17
申请号：US11232356
申请日：2005-09-20
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。

35. 发明申请

US20100072524A1 Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free Ferromagnetic Layer 有权
标题翻译：具有接近自由铁磁层的氧化物反铁磁层的磁性器件
公开(公告)号：US20100072524A1
公开(公告)日：2010-03-25
申请号：US12425370
申请日：2009-04-16
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

36. 发明申请

US20080273380A1 METHOD AND SYSTEM FOR PROVIDING FIELD BIASED MAGNETIC MEMORY DEVICES 有权
标题翻译：用于提供现场偏磁磁记录装置的方法和系统
公开(公告)号：US20080273380A1
公开(公告)日：2008-11-06
申请号：US11692090
申请日：2007-03-27
申请人： Zhitao Diao , Lien-Chang Wang , Yiming Huai
发明人： Zhitao Diao , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C11/00 , H01S4/00
CPC分类号： G11C11/16 , Y10T29/49002
摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.
摘要翻译：公开了一种用于提供磁存储器的方法和系统。该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。多个位线对应于多个磁存储单元。所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

37. 发明授权

US07369427B2 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US07369427B2
公开(公告)日：2008-05-06
申请号：US10938219
申请日：2004-09-09
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：一种方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

38. 发明申请

US20070246787A1 On-plug magnetic tunnel junction devices based on spin torque transfer switching 审中-公开
标题翻译：基于自旋转矩转换的插头磁隧道结装置
公开(公告)号：US20070246787A1
公开(公告)日：2007-10-25
申请号：US11394056
申请日：2006-03-29
申请人： Lien-Chang Wang , Eugene Chen , Yiming Huai , Zhitao Diao
发明人： Lien-Chang Wang , Eugene Chen , Yiming Huai , Zhitao Diao
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.
摘要翻译：与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。描述了插头MTJ设计和制造技术。

39. 发明申请

US20070171694A1 Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density 有权
标题翻译：具有降低的自旋转移开关电流密度的电流切换自旋转移磁性器件
公开(公告)号：US20070171694A1
公开(公告)日：2007-07-26
申请号：US11318337
申请日：2005-12-23
申请人： Yiming Huai , Zhitao Diao , Alex Panchula , Eugene Chen , Lien-Chang Wang
发明人： Yiming Huai , Zhitao Diao , Alex Panchula , Eugene Chen , Lien-Chang Wang
IPC分类号： G11C11/22
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.
摘要翻译：诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

40. 发明申请

US20070063236A1 Magnetic device having stabilized free ferromagnetic layer 有权
标题翻译：具有稳定的自由铁磁层的磁性装置
公开(公告)号：US20070063236A1
公开(公告)日：2007-03-22
申请号：US11232356
申请日：2005-09-20
申请人： Yiming Huai , Zhitao Diao , Eugene Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Chen
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。

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