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31. 发明申请

US20130051615A1 APPARATUS AND METHOD FOR PROVIDING APPLICATIONS ALONG WITH AUGMENTED REALITY DATA 审中-公开
标题翻译：用于提供应用程序的设备和方法与已实现的实际数据
公开(公告)号：US20130051615A1
公开(公告)日：2013-02-28
申请号：US13336748
申请日：2011-12-23
申请人： Sang-Hyeok LIM , Gum-Ho KIM , Yu-Seung KIM
发明人： Sang-Hyeok LIM , Gum-Ho KIM , Yu-Seung KIM
IPC分类号： G06K9/00
CPC分类号： G06K9/00671 , A63F13/65 , A63F2300/1093 , A63F2300/6009 , A63F2300/6045 , A63F2300/69 , G06F3/005 , G06F8/61 , G06Q30/0261 , H04L67/38 , H04M1/72525 , H04M2250/52 , H04W12/08
摘要： A mobile terminal to execute an application, the application being retrieved by a search term generated from augmented reality data, and a method thereof is provided. A method for filtering, determining and displaying the applications as icons on a mobile terminal is also provided. A method for displaying and providing access for retrieving applications is also provided.
摘要翻译：提供了一种用于执行应用的移动终端，该应用程序是通过从增强现实数据生成的搜索项检索的，及其方法。还提供了一种用于在移动终端上过滤，确定和显示应用程序作为图标的方法。还提供了用于显示和提供用于检索应用程序的访问的方法。

32. 发明授权

US08383763B2 ION-conducting sulfonated polymeric materials 有权
标题翻译：离子导电磺化聚合材料
公开(公告)号：US08383763B2
公开(公告)日：2013-02-26
申请号：US12845874
申请日：2010-07-29
申请人： James E. McGrath , Michael Hickner , Feng Wang , Yu-Seung Kim
发明人： James E. McGrath , Michael Hickner , Feng Wang , Yu-Seung Kim
IPC分类号： C08G75/20
CPC分类号： B01D71/82 , B01D69/141 , B01D71/64 , B01D71/68 , C08G73/10 , C08G75/23
摘要： Sulfonated polymers are made by the direct polymerization of a sulfonated monomer to form the sulfonated polymers. The types of sulfonated polymers may include polysulfones or polyimides. The sulfonated polymers can be formed into membranes that may be used in proton exchange membrane fuel cells or as ion exchange membranes. The membranes formed from the sulfonated polymers exhibit improved properties over that of Nafion®. A heteropoly acid may be added to the sulfonated polymer to form a nanocomposite membrane in which the heteropoly acid is highly dispersed. The addition of a heteropoly acid to the sulfonated polymer increases the thermal stability of the membrane, enhances the conductivity above 100° C., and reduces the water uptake of the membrane.
摘要翻译：磺化聚合物通过磺化单体的直接聚合制成磺化聚合物。磺化聚合物的类型可以包括聚砜或聚酰亚胺。磺化聚合物可以形成为可用于质子交换膜燃料电池或作为离子交换膜的膜。由磺化聚合物形成的膜表现出比Nafion®改善的性能。可以将杂多酸加入到磺化聚合物中以形成杂多酸高度分散的纳米复合膜。向磺化聚合物中加入杂多酸增加了膜的热稳定性，提高了100℃以上的电导率，并降低了膜的吸水率。

33. 发明授权

US08236207B2 Non-aqueous liquid compositions comprising ion exchange polymers reference to related application 有权
标题翻译：包含离子交换聚合物的非水液体组合物参考相关申请
公开(公告)号：US08236207B2
公开(公告)日：2012-08-07
申请号：US12938087
申请日：2010-11-02
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q. T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q. T. Rockward
IPC分类号： H01B1/00 , H01B1/12 , H01B1/02 , H01B1/22 , H01M4/02 , H01M4/88 , H01M4/36 , H01M4/92 , H01M8/00 , C09K3/00 , B01J31/00 , B01J37/00 , B01J23/40 , B01J23/74 , B01J23/00 , C08F4/02 , C08F4/60
CPC分类号： H01B1/122 , H01G11/48 , H01M4/8663 , H01M4/881 , H01M4/8828 , H01M4/92 , Y02E60/13
摘要： Compositions, and methods of making thereof, comprising from about 1% to about 5% of a perfluorinated sulfonic acid ionomer or a hydrocarbon-based ionomer; and from about 95% to about 99% of a solvent, said solvent consisting essentially of a polyol; wherein said composition is substantially free of water and wherein said ionomer is uniformly dispersed in said solvent.
摘要翻译：组合物及其制备方法，包含约1％至约5％的全氟磺酸离聚物或基于烃的离聚物; 和约95％至约99％的溶剂，所述溶剂基本上由多元醇组成; 其中所述组合物基本上不含水，并且其中所述离聚物均匀地分散在所述溶剂中。

34. 发明申请

US20110278538A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110278538A1
公开(公告)日：2011-11-17
申请号：US13104487
申请日：2011-05-10
申请人： Hyung Duk KO , Jung Ja YANG , Yu Seung KIM , Youn Joon SUNG , Soo Jin JUNG , Dae Cheon KIM , Byung Kwun LEE
发明人： Hyung Duk KO , Jung Ja YANG , Yu Seung KIM , Youn Joon SUNG , Soo Jin JUNG , Dae Cheon KIM , Byung Kwun LEE
IPC分类号： H01L33/06 , H01L33/58
CPC分类号： H01L33/20 , H01L33/38 , H01L33/42 , H01L33/44 , H01L2933/0091
摘要： Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件包括发光结构和图案。发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。该图案形成在发光结构的表面中的至少一个发光表面上。该图案具有形状相似的多个凸部或凹部。具有形成在其上的图案的发光面具有多个尺寸相等并以规则排列的虚拟参考区域。凸部或凹部设置在参考区域中，使得其边缘的一部分与多个虚拟参考区域之一的轮廓接触。

35. 发明申请

US20110049441A1 NON-AQUEOUS LIQUID COMPOSITIONS COMPRISING ION EXCHANGE POLYMERS CROSS REFERENCE TO RELATED APPLICATION 有权
标题翻译：包含离子交换聚合物的非水性液体组合物相关申请的交叉引用
公开(公告)号：US20110049441A1
公开(公告)日：2011-03-03
申请号：US12938087
申请日：2010-11-02
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
IPC分类号： H01B1/22 , H01B1/12
CPC分类号： H01B1/122 , H01G11/48 , H01M4/8663 , H01M4/881 , H01M4/8828 , H01M4/92 , Y02E60/13
摘要： Compositions, and methods of making thereof, comprising from about 1% to about 5% of a perfluorinated sulfonic acid ionomer or a hydrocarbon-based ionomer; and from about 95% to about 99% of a solvent, said solvent consisting essentially of a polyol; wherein said composition is substantially free of water and wherein said ionomer is uniformly dispersed in said solvent.
摘要翻译：组合物及其制备方法，包含约1％至约5％的全氟磺酸离聚物或基于烃的离聚物; 和约95％至约99％的溶剂，所述溶剂基本上由多元醇组成; 其中所述组合物基本上不含水，并且其中所述离聚物均匀地分散在所述溶剂中。

36. 发明申请

US20100183804A1 Methods of making membrane electrode assemblies 有权
标题翻译：制造膜电极组件的方法
公开(公告)号：US20100183804A1
公开(公告)日：2010-07-22
申请号：US12321466
申请日：2009-01-20
申请人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
发明人： Yu Seung Kim , Kwan-Soo Lee , Tommy Q.T. Rockward
IPC分类号： B05D5/12
CPC分类号： H01M8/1004 , H01M4/8814 , H01M4/8828 , H01M4/8842 , H01M4/8882 , H01M4/8896 , H01M8/1023 , H01M8/1039 , Y02E60/522 , Y02P70/56
摘要： Method of making a membrane electrode assembly comprising: providing a membrane comprising a perfluorinated sulfonic acid; providing a first transfer substrate; applying to a surface of the first transfer substrate a first ink, said first ink comprising an ionomer and a catalyst; applying to the first ink a suitable non-aqueous swelling agent; forming an assembly comprising: the membrane; and the first transfer substrate, wherein the surface of the first transfer substrate comprising the first ink and the non-aqueous swelling agent is disposed upon one surface of the membrane; and heating the assembly at a temperature of 150° C. or less and at a pressure of from about 250 kPa to about 3000 kPa or less for a time suitable to allow substantially complete transfer of the first ink and the second ink to the membrane; and cooling the assembly to room temperature and removing the first transfer substrate and the second transfer substrate.
摘要翻译：制造膜电极组件的方法，包括：提供包含全氟化磺酸的膜; 提供第一转印衬底; 向所述第一转印基板的表面施加第一墨，所述第一墨包含离聚物和催化剂; 向第一油墨施加合适的非水溶胀剂; 形成组件，其包括：所述膜; 和第一转印衬底，其中包含第一油墨和非水溶胀剂的第一转印衬底的表面设置在膜的一个表面上; 并且在150℃或更低的温度和约250kPa至约3000kPa或更低的压力下加热所述组件适合允许所述第一油墨和所述第二油墨基本上完全转移到所述膜的时间; 并将组件冷却至室温并除去第一转移衬底和第二转移衬底。

37. 发明申请

US20090159922A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090159922A1
公开(公告)日：2009-06-25
申请号：US12209644
申请日：2008-09-12
申请人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
发明人： Hyun Soo KIM , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.
摘要翻译：提供一种氮化物半导体发光器件，包括：具有n型和p型氮化物半导体层的发光结构和在其间形成的有源层; 分别与n型和p型氮化物半导体电连接的n型和p型电极; 以及形成在n型氮化物半导体层和n型电极之间的n型欧姆接触层，并且具有由含有In的材料形成的第一层和形成在第一层上的由包含W的材料形成的第二层根据本发明的一个方面，提供一种氮化物半导体发光器件，其具有不具有热稳定性的热稳定性和优异的电特性的n型电极。根据本发明的另一方面，提供了一种制造优化以获得优异的热和电特性的氮化物半导体发光器件的方法。

38. 发明授权

US07460579B2 Multi-wavelength semiconductor laser device 失效
标题翻译：多波长半导体激光器件
公开(公告)号：US07460579B2
公开(公告)日：2008-12-02
申请号：US11159350
申请日：2005-06-23
申请人： Jong Ik Park , Yu Seung Kim , Ki Won Moon , Hye Ran Oh
发明人： Jong Ik Park , Yu Seung Kim , Ki Won Moon , Hye Ran Oh
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01S3/08086 , H01S3/0809
摘要： A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.
摘要翻译：半导体激光装置包括：基板，其具有分为第一区域和第二区域的顶表面; 包括依次形成在所述基板的所述第一区域上的包括具有第一脊结构的上部的第一导电型覆盖层，有源层和第二导电型覆盖层的高输出LD，以及依次形成在所述基板的第二区域上的包括第一导电型覆盖层，有源层和包括具有第二脊结构的上部的第二导电型覆盖层的低输出LD，其中，并且第二脊结构形成为使得它们彼此相对延伸到两个端部，第一脊结构在两个或更多个弯曲位置弯曲，并且第二脊结构是直线的。

39. 发明授权

US09312249B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09312249B2
公开(公告)日：2016-04-12
申请号：US14338225
申请日：2014-07-22
申请人： Pun Jae . Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
发明人： Pun Jae . Choi , Sang Bum Lee , Jin Bock Lee , Yu Seung Kim , Sang Yeob Song
IPC分类号： H01L33/56 , H01L25/13 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/44 , H01L33/48 , H01L33/54 , H05B33/08 , H01L25/075 , H01L33/50
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
摘要翻译：在半导体发光器件中，发光结构包括依次形成在导电基板上的第一导电型半导体层，有源层和第二导电型半导体层。第二导电型电极包括导电孔和电连接部。导电通孔穿过第一导电类型半导体层和有源层，并连接到第二导电类型半导体层的内部。电连接部分从导电通孔延伸并暴露于发光结构的外部。绝缘体将第二导电型电极与导电基板，第一导电型半导体层和有源层电隔离。形成钝化层以覆盖发光结构中的有源层的至少一个侧表面。在从有源层发射的光的路径上形成不均匀结构。

40. 发明申请

US20150147835A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20150147835A1
公开(公告)日：2015-05-28
申请号：US14612244
申请日：2015-02-02
申请人： Pun Jae CHOI , Yu Seung KIM , Jin Bock LEE
发明人： Pun Jae CHOI , Yu Seung KIM , Jin Bock LEE
IPC分类号： H01L33/00 , H01L33/42 , H01L33/40
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
摘要： There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
摘要翻译：提供一种半导体发光器件，其包括依次堆叠的导电衬底，第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层。第一电极层和第一半导体层之间的接触面积为半导体发光元件的总面积的3〜13％，实现了高的发光效率。

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