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31. 发明申请

US20130126716A1 PIXEL CIRCUIT, DEPTH SENSOR AND OPERATING METHOD 有权
标题翻译：像素电路，深度传感器和操作方法
公开(公告)号：US20130126716A1
公开(公告)日：2013-05-23
申请号：US13611607
申请日：2012-09-12
申请人： YONG-JEI LEE , YOON-DONG PARK , YOUNG-GU JIN
发明人： YONG-JEI LEE , YOON-DONG PARK , YOUNG-GU JIN
IPC分类号： G01J1/44
CPC分类号： G01J1/44 , G01J1/0228 , G01J1/18 , G01S7/4914 , G01S17/89 , H04N5/3696
摘要： A pixel circuit for a depth sensor operating in a detection period and an output period in either a first operating mode (high incident light intensity) or a second operating mode (low incident light intensity). The pixel circuit includes a light receiving unit generating charge in response to the incident light, a signal generation unit accumulating charge in a FDN in response to a transmission signal, reset signal and selection signal during the detection period, and generating an analog signal having a level corresponding to a voltage apparent at the FDN during the output period, and a refresh transistor coupled between a supply voltage and the light receiving unit and discharging charge to the supply voltage in response to a refresh signal.
摘要翻译：用于在第一操作模式（高入射光强度）或第二操作模式（低入射光强度）中的检测周期和输出周期中操作的深度传感器的像素电路。像素电路包括响应于入射光而产生电荷的光接收单元，信号生成单元响应于在检测周期期间的发送信号，复位信号和选择信号在FDN中累积电荷，并且生成具有对应于在输出周期期间在FDN处显现的电压的电平，以及耦合在电源电压和光接收单元之间的刷新晶体管，并且响应于刷新信号将电荷放电到电源电压。

32. 发明授权

US08294880B2 Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
公开(公告)号：US08294880B2
公开(公告)日：2012-10-23
申请号：US13137907
申请日：2011-09-21
申请人： Young-gu Jin , Dae-kil Cha , Seung-hoon Lee , Yoon-dong Park
发明人： Young-gu Jin , Dae-kil Cha , Seung-hoon Lee , Yoon-dong Park
IPC分类号： G01C3/08
CPC分类号： G01C3/08 , G01B11/22 , H01L27/14609 , H01L27/14641
摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.

33. 发明申请

US20120012899A1 Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor 有权
标题翻译：距离测量传感器包括双传输门和三维彩色图像传感器，包括距离测量传感器
公开(公告)号：US20120012899A1
公开(公告)日：2012-01-19
申请号：US13137907
申请日：2011-09-21
申请人： Young-gu Jin , Dae-Kil Cha , Seung-hoon Lee , Yoon-dong Park
发明人： Young-gu Jin , Dae-Kil Cha , Seung-hoon Lee , Yoon-dong Park
IPC分类号： H01L27/148
CPC分类号： G01C3/08 , G01B11/22 , H01L27/14609 , H01L27/14641
摘要： Provided are a distance measuring sensor including a double transfer gate, and a three dimensional color image sensor including the distance measuring sensor. The distance measuring sensor may include first and second charge storage regions which are spaced apart from each other on a substrate doped with a first impurity, the first and second charge storage regions being doped with a second impurity; a photoelectric conversion region between the first and second charge storage regions on the substrate, being doped with the second impurity, and generating photo-charges by receiving light; and first and second transfer gates which are formed between the photoelectric conversion region and the first and second charge storage regions above the substrate to selectively transfer the photo-charges in the photoelectric conversion region to the first and second charge storage regions.
摘要翻译：提供了包括双转移门的距离测量传感器和包括距离测量传感器的三维彩色图像传感器。距离测量传感器可以包括在掺杂有第一杂质的衬底上彼此间隔开的第一和第二电荷存储区域，第一和第二电荷存储区域掺杂有第二杂质; 在基板上的第一和第二电荷存储区域之间的光电转换区域，掺杂有第二杂质，并通过接收光产生光电荷; 以及第一和第二传输门，其形成在光电转换区与衬底上方的第一和第二电荷存储区之间，以选择性地将光电转换区中的光电荷转移到第一和第二电荷存储区。

34. 发明授权

US08053822B2 Capacitorless DRAM and methods of manufacturing and operating the same 失效
标题翻译：无电容DRAM及其制造和运行方法相同
公开(公告)号：US08053822B2
公开(公告)日：2011-11-08
申请号：US12153666
申请日：2008-05-22
申请人： Suk-pil Kim , Young-gu Jin , Yoon-dong Park
发明人： Suk-pil Kim , Young-gu Jin , Yoon-dong Park
IPC分类号： H01L27/108
CPC分类号： H01L27/108 , H01L27/10802 , H01L29/7841
摘要： Example embodiments provide a capacitorless dynamic random access memory (DRAM), and methods of manufacturing and operating the same. The capacitorless DRAM according to example embodiments may include a semiconductor layer separated from a top surface of a substrate and that contains a source region, a drain region, and a channel region, a charge reserving layer formed on the channel region, and a gate formed on the substrate to contact the channel region and the charge reserving layer.
摘要翻译：示例性实施例提供无电容器动态随机存取存储器（DRAM）及其制造和操作方法。根据示例实施例的无电容器DRAM可以包括从衬底的顶表面分离并且包含源极区，漏极区和沟道区的半导体层，形成在沟道区上的电荷保留层，以及形成的栅极在基板上与沟道区和电荷保留层接触。

35. 发明申请

US20110129123A1 IMAGE SENSORS FOR SENSING OBJECT DISTANCE INFORMATION 有权
标题翻译：用于感测物体距离信息的图像传感器
公开(公告)号：US20110129123A1
公开(公告)日：2011-06-02
申请号：US12954835
申请日：2010-11-26
申请人： Ilia Ovsiannikov , Yoon-dong Park , Dong-ki Min , Young-gu Jin
发明人： Ilia Ovsiannikov , Yoon-dong Park , Dong-ki Min , Young-gu Jin
IPC分类号： G06K9/00
CPC分类号： G01B11/026 , G01S7/4912 , G01S7/4914 , G01S17/023 , G01S17/89
摘要： An image sensor includes a clock signal generator configured to generate and output at least first and second clock signals, a plurality of pixels configured to generate associated distance signals based on corresponding clock signals from among the at least first and second clock signals and light reflected by an object, and a distance information deciding unit configured to determine distance information with respect to the object by using the associated distance signals. At least one first pixel from among the plurality of pixels is configured to generate the associated distance signal based on at least the first clock signal, and at least one second pixel from among the plurality of pixels, which is adjacent to the at least one first pixel, is configured to generate the associated distance signal based on at least the second clock signal.
摘要翻译：图像传感器包括：时钟信号发生器，被配置为产生并输出至少第一和第二时钟信号;多个像素，被配置为基于来自所述至少第一和第二时钟信号中的相应时钟信号和由对象和距离信息决定单元，被配置为通过使用相关联的距离信号来确定关于对象的距离信息。所述多个像素中的至少一个第一像素被配置为基于至少所述第一时钟信号和所述多个像素中的至少一个第二像素生成所述相关距离信号，所述至少一个第二像素与所述至少一个第一像素，被配置为基于至少第二时钟信号来生成相关联的距离信号。

36. 发明授权

US07948019B2 Nonvolatile memory devices and methods of operating the same 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US07948019B2
公开(公告)日：2011-05-24
申请号：US12071451
申请日：2008-02-21
申请人： Young-gu Jin , Ki-ha Hong , Yoon-dong Park , Jai-kwang Shin , Suk-pil Kim
发明人： Young-gu Jin , Ki-ha Hong , Yoon-dong Park , Jai-kwang Shin , Suk-pil Kim
IPC分类号： H01L29/788
CPC分类号： G11C16/0416 , H01L21/28273 , H01L27/11521 , H01L29/0673 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： Example embodiments include nonvolatile memory devices that have good operation performance and may be made in a highly integrated structure, and methods of operating the same. Example embodiments of the nonvolatile memory devices include a substrate electrode, and a semiconductor channel layer on the substrate electrode, a floating gate electrode on the substrate electrode, wherein a portion of the floating gate electrode faces the semiconductor channel layer, a control gate electrode on the floating gate electrode, and wherein a distance between a portion of the floating gate electrode and the substrate electrode is smaller than a distance between the semiconductor channel layer and the substrate electrode wherein charge tunneling occurs.
摘要翻译：示例性实施例包括具有良好操作性能并且可以以高度集成的结构制造的非易失性存储器件及其操作方法。非易失性存储器件的示例性实施例包括衬底电极和衬底电极上的半导体沟道层，衬底电极上的浮置栅电极，其中浮置栅电极的一部分面向半导体沟道层，控制栅极电极所述浮置栅极电极，并且其中所述浮置栅电极的一部分与所述基板电极之间的距离小于半导体沟道层与发生电荷隧道的基板电极之间的距离。

37. 发明授权

US07929351B2 Method for reducing lateral movement of charges and memory device thereof 有权
标题翻译：减少电荷横向运动的方法及其记忆装置
公开(公告)号：US07929351B2
公开(公告)日：2011-04-19
申请号：US12382790
申请日：2009-03-24
申请人： Kwang-soo Seol , Young-gu Jin , Yoon-dong Park
发明人： Kwang-soo Seol , Young-gu Jin , Yoon-dong Park
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C16/3409 , G11C16/344 , G11C16/3454
摘要： Provided is a method and device for reducing lateral movement of charges. The method may include pre-programming at least one memory cell that is in an erased state by applying a pre-programming voltage to the at least one memory cell to have a narrower distribution of threshold voltages than the at least one erased state memory cell and verifying that the pre-programmed memory cell is in the pre-programmed state using a negative effective verifying voltage.
摘要翻译：提供一种用于减少电荷的横向移动的方法和装置。该方法可以包括通过对至少一个存储器单元施加预编程电压以使得具有比所述至少一个擦除状态存储器单元更窄的阈值电压分布来对处于擦除状态的至少一个存储器单元进行预编程，以及使用负的有效验证电压来验证预编程存储器单元是否处于预编程状态。

38. 发明授权

US07919786B2 Nanowire light emitting device 有权
标题翻译：纳米线发光装置
公开(公告)号：US07919786B2
公开(公告)日：2011-04-05
申请号：US12040686
申请日：2008-02-29
申请人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
发明人： Young-gu Jin , Sung-hoon Lee , Hyo-sug Lee , Byoung-lyong Choi , Jong-seob Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , B82Y10/00 , H01L33/06 , H01L33/18 , Y10S977/762
摘要： A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.
摘要翻译：提供了一种纳米线发光器件。纳米线发光器件包括衬底，在衬底上形成的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。从发光层发出的光的颜色根据发光材料而变化。

39. 发明申请

US20110074989A1 IMAGE SENSORS 有权
标题翻译：图像传感器
公开(公告)号：US20110074989A1
公开(公告)日：2011-03-31
申请号：US12887258
申请日：2010-09-21
申请人： Eric R. Fossum , Soo-Jung Hwang , Young-Gu Jin , Yoon-Dong Park , Dae-Kil Cha
发明人： Eric R. Fossum , Soo-Jung Hwang , Young-Gu Jin , Yoon-Dong Park , Dae-Kil Cha
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H04N5/3696 , H01L27/14621 , H01L27/14645 , H04N5/2257 , H04N5/332
摘要： Provided is an image sensor having a depth sensor. The image sensor includes a substrate including a visible light region and a non-visible light region, a first well and a second well having a first conductivity type and in the non-visible light perception region, and a first gate and a second gate configured to receive voltages of opposite phases, respectively, and apply voltages to the first well and the second well, respectively.
摘要翻译：具有深度传感器的图像传感器。图像传感器包括：包括可见光区域和不可见光区域的基板，具有第一导电类型的第一阱和第二阱以及不可见光感知区域中的第一栅极和第二栅极配置分别接收相位相的电压，并分别向第一阱和第二阱施加电压。

40. 发明申请

US20110013055A1 Optical sensor and semiconductor device 审中-公开
标题翻译：光学传感器和半导体器件
公开(公告)号：US20110013055A1
公开(公告)日：2011-01-20
申请号：US12801938
申请日：2010-07-02
申请人： Sang-Chul Sul , Myung-Bok Lee , Hoon-Sang Oh , Young-Gu Jin
发明人： Sang-Chul Sul , Myung-Bok Lee , Hoon-Sang Oh , Young-Gu Jin
IPC分类号： H04N5/335
CPC分类号： H01L27/14645 , H01L27/14621 , H01L27/14625 , H01L27/14632
摘要： Example embodiments are directed to a semiconductor device including a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; an infrared light cut filter on the light-inducing member and configured to block infrared light; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and an RGB filter on the light-inducing member and configured to allow visible light to pass. According to example embodiments, a method of manufacturing a semiconductor device may include forming a color pixel array on a substrate; forming a distance pixel array on the substrate; forming a light-inducing member on the color pixel array and the distance pixel array; forming an infrared light cut filter on the light-inducing member; forming a near infrared light filter on the light-inducing member; forming a RGB filter on the light-inducing member; and forming a plurality of lenses on the infrared light cut filter and the near infrared light filter.
摘要翻译：示例性实施例涉及在衬底上包括彩色像素阵列的半导体器件; 衬底上的距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上的导光构件; 在所述导光部件上的红外光截止滤光器，被配置为阻挡红外光; 在所述导光部件上的近红外光滤光器，其被配置为允许近红外光通过; 以及在所述光诱导构件上的RGB滤光器，并且被配置为允许可见光通过。根据示例性实施例，制造半导体器件的方法可以包括在衬底上形成彩色像素阵列; 在基板上形成距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上形成导光部件; 在所述感光构件上形成红外光截止滤光器; 在所述导光部件上形成近红外光滤波器; 在所述感光构件上形成RGB滤光器; 并且在红外线截止滤光器和近红外光滤光器上形成多个透镜。

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