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31. 发明授权

US09490298B2 Magnetic memory devices having a perpendicular magnetic tunnel junction 有权
标题翻译：具有垂直磁隧道结的磁存储器件
公开(公告)号：US09490298B2
公开(公告)日：2016-11-08
申请号：US14264049
申请日：2014-04-28
申请人： Woojin Kim , Ki Woong Kim , Woo Chang Lim
发明人： Woojin Kim , Ki Woong Kim , Woo Chang Lim
IPC分类号： H01L29/82 , H01L21/8239 , H01L27/105 , H01L27/22 , H01L43/08 , G11C11/16 , H01F10/32
CPC分类号： H01L27/222 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.
摘要翻译：磁存储器件可以包括通过隧道势垒彼此分离的自由磁结构和参考磁性结构。自由磁结构可以包括交换耦合层，以及通过交换耦合层彼此分离的第一和第二自由层。第一自由层可以设置在第二自由层和隧道势垒之间。第一自由层的厚度可以大于第一最大各向异性厚度，即第一自由层具有最大垂直各向异性的厚度。第二自由层的厚度可以小于第二最大各向异性厚度，即第二自由层具有最大垂直各向异性的厚度。具有两个具有不同厚度的自由层的磁性隧道结可实现具有增加的MR比和降低的开关电流的磁存储器件。

32. 发明授权

US09276198B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US09276198B2
公开(公告)日：2016-03-01
申请号：US13967340
申请日：2013-08-14
申请人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
发明人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
IPC分类号： H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659
摘要： A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.
摘要翻译：根据实施例的磁存储器件包括衬底上的第一参考磁性层，第一参考磁性层上的第二参考磁性层，第一参考磁性层和第二参考磁性层之间的自由层，第一隧道势垒层在第一参考磁性层和自由层之间，以及在第二参考磁性层和自由层之间的第二隧道势垒层。第一参考磁性，第二参考磁性和自由层各自具有基本上垂直于衬底顶表面的磁化方向。第一隧道势垒层的电阻面积乘积（RA）值大于第二隧道势垒层的电阻面积积（RA）值。

33. 发明授权

US09048412B2 Magnetic memory devices including magnetic layers separated by tunnel barriers 有权
标题翻译：磁存储器件包括由隧道屏障隔开的磁性层
公开(公告)号：US09048412B2
公开(公告)日：2015-06-02
申请号：US14206053
申请日：2014-03-12
申请人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L29/82 , H01L43/02 , B82Y25/00 , G11C11/16 , H01F10/32 , H01L43/08 , H01L43/10 , H01F10/12
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
摘要翻译：磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间和第一结磁性层。隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间和第二垂直磁性层。

34. 发明申请

US20150115380A1 MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：磁记忆装置
公开(公告)号：US20150115380A1
公开(公告)日：2015-04-30
申请号：US14583831
申请日：2014-12-29
申请人： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
发明人： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
IPC分类号： H01L43/10 , H01L43/02
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
摘要翻译：提供磁存储器件。所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层，第一垂直磁性层和第一垂直磁性层的第二子层。

35. 发明授权

US08772846B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices 有权
标题翻译：磁隧道结设备，存储器，存储器系统和电子设备
公开(公告)号：US08772846B2
公开(公告)日：2014-07-08
申请号：US13398640
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： H01L21/14
CPC分类号： H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
摘要： Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
摘要翻译：本发明提供一种包括具有磁性层的第一结构的磁性隧道接合装置; 包括至少两个外在垂直磁化结构的第二结构，每个包括磁性层; 磁性层上的垂直磁化诱导层; 以及第一和第二结构之间的隧道屏障。

36. 发明授权

US08405173B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US08405173B2
公开(公告)日：2013-03-26
申请号：US13159236
申请日：2011-06-13
申请人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
发明人： Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10
摘要： A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.
摘要翻译：一种磁存储器件包括具有固定的磁化方向的参考磁性层，参考磁性层上的隧道势垒层，在与参考磁性层相对的隧道势垒层上具有可变的磁化方向的自由层和磁化反转辅助层在自由层上。磁化反转辅助层具有固定的磁化方向，其基本上垂直于沿着隧道势垒层和参考层之间的界面的平面。磁化反转辅助层可以直接在自由层上，或者可以在磁化反转辅助层和自由层之间提供交换耦合控制层。

37. 发明授权

US08288289B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08288289B2
公开(公告)日：2012-10-16
申请号：US13016228
申请日：2011-01-28
申请人： Jun-Ho Jeong , Jang-Eun Lee , Se-Chung Oh , Suk-Hun Choi , Jea-Hyoung Lee , Woo-Jin Kim , Woo-Chang Lim
发明人： Jun-Ho Jeong , Jang-Eun Lee , Se-Chung Oh , Suk-Hun Choi , Jea-Hyoung Lee , Woo-Jin Kim , Woo-Chang Lim
IPC分类号： H01L21/302
CPC分类号： H01L21/28
摘要： A method of fabricating a semiconductor device, the method including providing a substrate; forming an underlying layer on the substrate; forming a sacrificial layer on the underlying layer; forming an opening in the sacrificial layer by patterning the sacrificial layer such that the opening exposes a predetermined region of the underlying layer; forming a mask layer in the opening; forming an oxide mask by partially or completely oxidizing the mask layer; removing the sacrificial layer; and etching the underlying layer using the oxide mask as an etch mask to form an underlying layer pattern.
摘要翻译：一种制造半导体器件的方法，所述方法包括提供衬底; 在衬底上形成下层; 在下层上形成牺牲层; 通过图案化所述牺牲层在所述牺牲层中形成开口，使得所述开口暴露所述下层的预定区域; 在开口中形成掩模层; 通过部分或完全氧化掩模层形成氧化物掩模; 去除牺牲层; 并使用氧化物掩模作为蚀刻掩模蚀刻下层以形成下层图案。

38. 发明申请

US20120018825A1 MAGNETIC MEMORY DEVICES, ELECTRONIC SYSTEMS AND MEMORY CARDS INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, AND METHODS OF FORMING A PERPENDICULAR MAGNETIC FILM OF THE SAME 有权
标题翻译：磁记录装置，电子系统和包括其的记忆卡，其制造方法以及形成其相应磁性膜的方法
公开(公告)号：US20120018825A1
公开(公告)日：2012-01-26
申请号：US13177115
申请日：2011-07-06
申请人： Woo Chang Lim , Jangeun Lee , SeChung Oh , Woojin Kim
发明人： Woo Chang Lim , Jangeun Lee , SeChung Oh , Woojin Kim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161
摘要： Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及形成垂直磁膜的方法。磁存储器件可以包括在具有第一晶体结构的衬底上的种子图案，具有第二晶体结构的种子图案上的垂直磁图案，以及种子图案和垂直磁图案之间的层间图案。层间图案可以减小由第一和第二晶体结构的水平晶格常数之间的差引起的应力。

39. 发明申请

US20120018824A1 MAGNETIC MEMORY LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME 有权
标题翻译：磁记忆层和磁记忆体装置，包括它们
公开(公告)号：US20120018824A1
公开(公告)日：2012-01-26
申请号：US13170870
申请日：2011-06-28
申请人： Woo-chang LIM , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
发明人： Woo-chang LIM , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the crystal direction with respect to a surface of the second seed layer.
摘要翻译：磁存储层和包括该磁存储器的磁存储器件，所述磁存储层包括第一晶种层; 在所述第一种子层上的第二种子层，所述第二种子层相对于所述第一种子层的表面根据晶体方向生长; 以及在所述第二种子层上的主磁性层，所述主磁性层相对于所述第二晶种层的表面根据所述晶体方向生长。

40. 发明申请

US20110062537A1 Magnetic Memory Devices 有权
标题翻译：磁存储器件
公开(公告)号：US20110062537A1
公开(公告)日：2011-03-17
申请号：US12862074
申请日：2010-08-24
申请人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
摘要翻译：磁存储器件可以包括第一垂直磁性层，第一垂直磁性层上的非磁性层和非磁性层上的第一结磁性层，其中非磁性层位于第一垂直磁性层之间和第一结磁性层。隧道势垒可以在第一结磁性层上，其中第一结磁性层位于非磁性层和隧道势垒之间。第二结磁性层可以在隧道势垒上，其中隧道势垒在第一和第二结磁层之间，第二垂直磁性层可以在第二结磁性层上，第二结磁性层位于隧道势垒之间和第二垂直磁性层。

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