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    • 35. 发明授权
    • Method of fabricating thin film transistor
    • 制造薄膜晶体管的方法
    • US08420513B2
    • 2013-04-16
    • US13419757
    • 2012-03-14
    • Ji-Su AhnEui-Hoon HwangCheol-Ho YuKwang-Nam KimSung-Chul Kim
    • Ji-Su AhnEui-Hoon HwangCheol-Ho YuKwang-Nam KimSung-Chul Kim
    • H01L29/04H01L21/20
    • H01L29/78675H01L27/1248H01L27/1285H01L27/3262H01L29/66757
    • A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.
    • 一种薄膜晶体管(TFT),包括在基板上的晶体半导体图形,在晶体半导体图案上的栅极绝缘层,栅极绝缘层具有两个第一源极/漏极接触孔和半导体图案访问孔,栅电极 在栅极绝缘层上,栅电极位于两个第一源极/漏极接触孔之间,覆盖栅电极的层间绝缘层,其中具有两个第二源极/漏极接触孔的层间绝缘层,以及栅电极上的源极和漏极 层间绝缘层,源极和漏极中的每一个与栅电极绝缘,并且具有通过第一和第二源极/漏极接触孔连接到晶体半导体图案的部分。
    • 39. 发明申请
    • SEALANT CURING APPARATUS
    • 密封固化装置
    • US20120312802A1
    • 2012-12-13
    • US13313499
    • 2011-12-07
    • Beong-Ju KimSung-Chul Kim
    • Beong-Ju KimSung-Chul Kim
    • H05B1/00H05B3/02
    • H05B3/84
    • A sealant curing apparatus is disclosed. In one embodiment, the apparatus includes a processing object panel, a panel supporting unit supporting the processing object panel and a voltage applying unit including a first electrode and a second electrode positioned on the panel supporting unit via the processing object panel interposed therebetween and having different polarities. The processing object panel includes: i) a conductive layer pattern including a heating unit that includes a lattice (grid) pattern, a connecting unit coupled to the first electrode and the second electrode, and a coupling unit connecting the heating unit and the connecting unit and ii) a sealant formed according to the heating unit.
    • 公开了一种密封剂固化装置。 在一个实施例中,该装置包括处理对象面板,支撑处理对象面板的面板支撑单元和电压施加单元,该电压施加单元包括位于面板支撑单元上的第一电极和第二电极, 极性 处理对象面板包括:i)包括包括格子(格栅)图案的加热单元,耦合到第一电极和第二电极的连接单元的导电层图案,以及连接加热单元和连接单元的耦合单元 和ii)根据加热单元形成的密封剂。