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31. 发明授权

US07646142B2 Field emission device (FED) having cathode aperture to improve electron beam focus and its method of manufacture 失效
标题翻译：具有阴极孔径以改善电子束聚焦的场发射器件（FED）及其制造方法
公开(公告)号：US07646142B2
公开(公告)日：2010-01-12
申请号：US11223031
申请日：2005-09-12
申请人： Ho-Suk Kang , Jun-Hee Choi , Byong-Gwon Song , Ha-Jong Kim
发明人： Ho-Suk Kang , Jun-Hee Choi , Byong-Gwon Song , Ha-Jong Kim
IPC分类号： H01J19/06 , H01J1/14 , H01K1/04 , H01J1/62
CPC分类号： H01J3/022 , H01J9/025 , H01J29/028 , H01J29/06 , H01J2329/00
摘要： A Field Emission Device (FED) and its method of manufacture includes: forming a substrate; forming a cathode having a cathode aperture on an upper surface of the substrate; forming a material layer having a first through hole with a smaller diameter than that of the cathode aperture on an upper surface of the cathode; forming a first insulator having a first cavity on an upper surface of the material layer; forming a gate electrode having a second through hole on an upper surface of the first insulator; and forming an emitter in a central portion of the cathode aperture.
摘要翻译：现场发射装置（FED）及其制造方法包括：形成基板; 在所述基板的上表面上形成具有阴极孔的阴极; 在所述阴极的上表面上形成具有比所述阴极孔径小的直径的第一通孔的材料层; 形成在所述材料层的上表面上具有第一空腔的第一绝缘体; 在所述第一绝缘体的上表面上形成具有第二通孔的栅电极; 并在阴极孔的中心部分形成发射极。

32. 发明申请

US20090321815A1 Non-volatile memory device and method of fabricating the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090321815A1
公开(公告)日：2009-12-31
申请号：US12453035
申请日：2009-04-28
申请人： Suk-kang Sung , Jung-dal Choi , Choong-ho Lee , Sung-hoi Hur
发明人： Suk-kang Sung , Jung-dal Choi , Choong-ho Lee , Sung-hoi Hur
IPC分类号： H01L29/792 , H01L27/092
CPC分类号： H01L21/823493 , H01L21/823456 , H01L27/11568 , H01L27/11573 , H01L29/792
摘要： A non-volatile memory device, including a substrate of a first conductivity type, the substrate including a plurality of wells of a second conductivity type, a plurality of memory cells in one of the plurality of wells of the second conductivity type, and a peripheral circuit including at least one first transistor of the second conductivity type on the substrate, and at least one second transistor of the first conductivity type in another one of the plurality of wells of the second conductivity type.
摘要翻译：一种非易失性存储器件，包括第一导电类型的衬底，所述衬底包括多个第二导电类型的阱，多个第二导电类型的阱之一中的多个存储单元，以及周边包括至少一个第一导电类型的第一晶体管和第二导电类型的另一个第二导电类型的第二导体类型的第二晶体管。

33. 发明授权

US07517710B2 Method of manufacturing field emission device 失效
标题翻译：场致发射装置的制造方法
公开(公告)号：US07517710B2
公开(公告)日：2009-04-14
申请号：US11604731
申请日：2006-11-28
申请人： Jun-Hee Choi , Ho-Suk Kang , Chan-Wook Baik , Ha-Jong Kim
发明人： Jun-Hee Choi , Ho-Suk Kang , Chan-Wook Baik , Ha-Jong Kim
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01J9/025 , H01J3/021
摘要： A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.
摘要翻译：提供了一种制造场致发射器件（FED）的方法，其减少了光掩模图案化工艺的数量并提高了FED的制造成品率。该方法包括以下步骤：在衬底上依次形成阴极层，第一绝缘层和栅极层，在栅电极层上形成保护层，蚀刻保护层和栅电极的部分，以形成多个第一开口第一绝缘层的部分通过第一开孔露出的孔，在保护层和第一开孔上形成第二绝缘层，在第二绝缘层上形成聚焦电极层，在焦点上形成光致抗蚀剂层蚀刻光致抗蚀剂层的一部分和聚焦电极层的一部分以形成第二开孔，其中第二绝缘层的一部分通过第二开孔暴露，并且形成暴露阴极的一部分的发射极通过将第二绝缘层的暴露表面蚀刻到第一绝缘层的底表面。在除去光致抗蚀剂层之后，在阴极层上形成电子发射发射体。

34. 发明授权

US07477569B2 Semiconductor memory device capable of performing page mode operation 有权
标题翻译：能够执行页面模式操作的半导体存储器件
公开(公告)号：US07477569B2
公开(公告)日：2009-01-13
申请号：US11316897
申请日：2005-12-27
申请人： Eun-Suk Kang , So-Hoe Kim
发明人： Eun-Suk Kang , So-Hoe Kim
IPC分类号： G11C8/18
CPC分类号： G11C8/04 , G11C7/1018 , G11C8/18
摘要： A semiconductor memory device adapted to perform a page mode operation comprises a first address transition detector adapted generate a first clock signal upon detecting a transition of a start address, a second address transition detector adapted to generate a second clock signal upon detecting transition of a lower bit of the start address and after the first clock signal is generated, and an address controller adapted to sequentially increment the start address in response to a transition of the second clock signal. The address controller sequentially accesses memory cells selected by the start address and the incremented start address in response to a transition of the second clock signal.
摘要翻译：适于执行页面模式操作的半导体存储器件包括：第一地址转换检测器，其适于在检测到起始地址的转变时产生第一时钟信号;第二地址转换检测器，适于在检测到较低的转换时产生第二时钟信号并且在产生第一时钟信号之后，以及地址控制器，其适于响应于第二时钟信号的转变而顺序地增加开始地址。地址控制器响应于第二时钟信号的转变，顺序地访问由起始地址和增加的开始地址选择的存储器单元。

35. 发明申请

US20080293215A1 Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions 有权
公开(公告)号：US20080293215A1
公开(公告)日：2008-11-27
申请号：US12219737
申请日：2008-07-28
申请人： Suk-Pil Kim , Yoon-Dong Park , Won-Joo Kim , Dong-Gun Park , Eun-Suk Cho , Suk-Kang Sung , Byung-Yong Choi , Tae-Yong Kim , Choong-Ho Lee
发明人： Suk-Pil Kim , Yoon-Dong Park , Won-Joo Kim , Dong-Gun Park , Eun-Suk Cho , Suk-Kang Sung , Byung-Yong Choi , Tae-Yong Kim , Choong-Ho Lee
IPC分类号： H01L21/76
CPC分类号： H01L29/785 , H01L21/28273 , H01L21/28282 , H01L21/84 , H01L27/10873 , H01L27/10879 , H01L27/1159 , H01L27/2436 , H01L29/66795
摘要： Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

36. 发明申请

US20080259006A1 Driving Circuit of Organic Light Emitting Diode Display Panel and Precharging Method Using the Same 审中-公开
标题翻译：有机发光二极管显示面板的驱动电路及使用其的预充电方法
公开(公告)号：US20080259006A1
公开(公告)日：2008-10-23
申请号：US12089505
申请日：2006-09-20
申请人： Seen Suk Kang , Seong Ik Jeong
发明人： Seen Suk Kang , Seong Ik Jeong
IPC分类号： G09G3/30
CPC分类号： G09G3/3216 , G09G3/2014 , G09G2310/0251
摘要： There is provided a driving circuit in which a voltage level can reach a full Vcc level when precharging and a precharging method using the same although a parasitic capacitance of an organic light emitting diode (OLED) panel increases.A driving circuit of an OLED panel includes according to the present invention: a precharge channel which is applied with Vcc voltage and operates when precharging; a discharge channel which is connected to the precharge channel in series and is connected to ground (GND) and is turned off when precharging; and a time shift circuit which is connected to the precharge channel and controls a voltage level according to a time setting.According to the present invention, a precharge voltage level can reach a full Vcc level according to a time setting although a parasitic capacitance of an OLED panel increases. Therefore, a driving circuit can be simply and easily implemented.
摘要翻译：提供了一种驱动电路，其中当预充电时，电压电平可以达到完全Vcc电平，并且尽管有机发光二极管（OLED）面板的寄生电容增加，但是使用该电压的预充电方法也是如此。 OLED面板的驱动电路包括：根据本发明的预充电通道，其施加Vcc电压并在预充电时工作; 放电通道串联连接到预充电通道并连接到地（GND），并在预充电时关断; 以及连接到预充电通道并根据时间设定来控制电压电平的时移电路。根据本发明，尽管OLED面板的寄生电容增加，但是根据时间设定，预充电电压电平可以达到完全Vcc电平。因此，可以简单且容易地实现驱动电路。

37. 发明授权

US07440679B2 Recording medium for storing information for still picture, recording and/or reproducing method and apparatus therefor 有权
标题翻译：用于存储用于静止图像，记录和/或再现方法及其装置的信息的记录介质
公开(公告)号：US07440679B2
公开(公告)日：2008-10-21
申请号：US10704716
申请日：2003-11-12
申请人： Seong-jin Moon , Young-nam Oh , Tae-yun Chung , Jung-suk Kang , Pan-gie Park
发明人： Seong-jin Moon , Young-nam Oh , Tae-yun Chung , Jung-suk Kang , Pan-gie Park
IPC分类号： H04N7/00 , H04N11/02 , H04N9/00 , H04N9/79 , H04N5/91 , H04N5/00 , G11B20/10
CPC分类号： G11B27/322 , G11B27/034 , G11B27/105 , G11B27/329 , G11B2220/215 , G11B2220/2562 , H04N1/212 , H04N1/2158 , H04N5/85 , H04N9/8042 , H04N9/8063 , H04N9/8205 , Y10S707/914 , Y10S707/915 , Y10S707/99945
摘要： A recording medium for storing information for still pictures, and a recording and/or reproducing method and apparatus therefor. A writeable and rewriteable recording medium stores data for a plurality of still pictures and audio data added thereto in one file or a space having a logically one-dimensional order, rather than in each file, and still picture group information for separating the still picture data into within a predetermined maximum number of groups in order to manage the still pictures at a group level is then stored on the recording medium. Thus, large-capacity still picture data and audio data added thereto can be recorded and/or reproduced using a minimum amount of information. The still picture group information includes general information for still picture groups, and information for still pictures in each still picture group. The general information for each still picture group includes the start position of a first still picture in each still picture group (the start position of each still picture group). The information for still pictures in each still picture group includes the sizes of video data and audio data for each still picture. Therefore, effective management of information is allowed.
摘要翻译：一种用于存储静止图像的信息的记录介质及其记录和/或再现方法和装置。可写入和可重写的记录介质将添加到其中的多个静止图像和音频数据的数据存储在一个文件中或者具有逻辑一维顺序的空间中，而不是在每个文件中，以及用于分离静止图像数据的静止图像组信息然后存储在记录介质上，以便将组群中的静止图像管理到预定的最大数量的组内。因此，可以使用最小量的信息来记录和/或再现大容量静态图像数据和添加到其中的音频数据。静止图像组信息包括静止图像组的一般信息和每个静止图像组中的静止图像的信息。每个静止图像组的一般信息包括每个静止图像组中的第一静止图像的开始位置（每个静止图像组的开始位置）。每个静止图像组中的静止图像的信息包括每个静止图像的视频数据和音频数据的大小。因此，信息的有效管理是允许的。

38. 发明申请

US20080141100A1 Semiconductor memory device having single-level cells and multi-level cells and method of driving the semiconductor memory device 失效
标题翻译：具有单级单元和多电平单元的半导体存储器件以及驱动半导体存储器件的方法
公开(公告)号：US20080141100A1
公开(公告)日：2008-06-12
申请号：US11891991
申请日：2007-08-14
申请人： Eun-suk Kang , Young-joon Choi , Sang-kil Lee , Dae-hyun Lee
发明人： Eun-suk Kang , Young-joon Choi , Sang-kil Lee , Dae-hyun Lee
IPC分类号： G11C29/00
CPC分类号： G11C11/5621 , G11C11/5628 , G11C16/0483 , G11C29/00 , G11C2029/0409 , G11C2211/5641
摘要： A semiconductor memory device that performs an error control operation when an error exists in an externally received command or an externally received address, and a method of driving the semiconductor memory device are provided. The semiconductor memory device includes a memory cell array having a single-level cell area and a multi-level cell area, a command decoder which receives a command from an external source and decoding the command, an area determination unit which receives an address from an external source and determines whether a memory cell corresponding to the address belongs to either the single-level cell area or the multi-level cell area, a command flag generation unit which generates at least one enable control signal according to the decoded command and the determination result, and a logic circuit which generates a control signal for driving the memory cells included in the memory cell array or performs an error control operation, in response to the enable control signal.
摘要翻译：提供了当外部接收的命令或外部接收的地址存在错误时执行错误控制操作的半导体存储器件，以及驱动半导体存储器件的方法。半导体存储器件包括具有单级单元区域和多级单元区域的存储单元阵列，从外部源接收命令并解码该命令的命令解码器，从外部源，并且确定与该地址相对应的存储单元是否属于单级单元区域或多级单元区域，命令标志生成单元，其根据解码命令和确定生成至少一个使能控制信号结果以及响应于使能控制信号产生用于驱动包括在存储单元阵列中的存储单元的控制信号或执行错误控制操作的逻辑电路。

39. 发明申请

US20080102547A1 Method of fabricating field emission array type light emitting unit 有权
标题翻译：场致发射阵列型发光单元的制造方法
公开(公告)号：US20080102547A1
公开(公告)日：2008-05-01
申请号：US11907942
申请日：2007-10-18
申请人： Sun-il Kim , Jun-hee Choi , Byong-gwon Song , Shang-hyeun Park , Ho-suk Kang , Deuk-seok Chung , Chan-wook Baik
发明人： Sun-il Kim , Jun-hee Choi , Byong-gwon Song , Shang-hyeun Park , Ho-suk Kang , Deuk-seok Chung , Chan-wook Baik
IPC分类号： H01L33/00
CPC分类号： H01J63/02 , G02F2001/133625 , H01J9/247
摘要： A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.
摘要翻译：一种制造场发射阵列型发光单元的方法，该发光阵列型发光单元包括：前表面上包括多个阴极和多个碳纳米管发射体的后基板，包括多个阳极的前基板和背面的荧光体层其特征在于，所述后基板和所述前基板被配置成彼此间隔开，并且在所述后基板与所述前基板之间配置有多个间隔件，所述多个间隔件适于保持距离恒定，所述方法包括：通过湿法蚀刻前基板的前侧的扩散图案。

40. 发明申请

US20080024223A1 Circuit for improving amplification and noise characteristics for MOSFET, and frequency mixer, amplifier and oscillator using the circuit 失效
公开(公告)号：US20080024223A1
公开(公告)日：2008-01-31
申请号：US11651809
申请日：2007-01-10
申请人： Chul Soon Park , Ho Suk Kang
发明人： Chul Soon Park , Ho Suk Kang
IPC分类号： H03F3/16
CPC分类号： H03F3/193 , H01L27/0629 , H03F1/26 , H03F3/16 , H03F2200/294
摘要： A circuit for improving amplification and noise characteristics of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), and a frequency mixer, an amplifier and an oscillator using the circuit are provided. A gate terminal of the MOSFET is connected to a body terminal of the MOSFET through a capacitor and the gate and body terminals of the MOSFET are connected to a current source to simultaneously provide a signal to both the gate terminal and the body terminal, in order to improve amplification and noise characteristics of the MOSFET. As a result, a higher level of amplification and a lower level of noise than the conventional art can be obtained.

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