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    • 33. 发明申请
    • ULTRASONIC MEASURING METHOD AND ULTRASONIC MEASURING SYSTEM
    • 超声波测量方法和超声波测量系统
    • US20120186348A1
    • 2012-07-26
    • US13356908
    • 2012-01-24
    • Seiichi MATSUMOTOHiroyuki KawakiShinya KurokiKazuhiro UchidaKiyokazu Ito
    • Seiichi MATSUMOTOHiroyuki KawakiShinya KurokiKazuhiro UchidaKiyokazu Ito
    • G01N29/024
    • G01B17/025G01B2210/44
    • In an ultrasonic measuring method for measuring the thickness of a coating material applied by coating to one surface or both surfaces of a substrate made of a metal so as to provide a coated product, a pair of first ultrasonic sensor and second ultrasonic sensor are provided such that the first ultrasonic sensor is placed on one side of the coated product, as viewed in its thickness direction, via an air layer, while the second ultrasonic sensor is placed on the other side of the coated product, via an air layer, and the thickness of the coating material is measured by transmitting ultrasonic waves between the first and the second ultrasonic sensors. A flat-type transmitting sensor that permits propagation of unfocused ultrasonic waves is used as the first ultrasonic sensor, and a flat-type receiving sensor that permits propagation of unfocused ultrasonic waves is used as the second ultrasonic sensor.
    • 在用于测量通过涂覆在由金属制成的基底的一个表面或两个表面上涂覆的涂层材料的厚度以提供涂覆产品的超声波测量方法中,提供一对第一超声波传感器和第二超声波传感器, 通过空气层将第一超声波传感器放置在涂覆产品的沿其厚度方向观察的一侧上,而第二超声波传感器经由空气层放置在涂覆产品的另一侧上,并且 通过在第一和第二超声波传感器之间传输超声波来测量涂层材料的厚度。 作为第一超声波传感器,使用允许未聚焦的超声波的传播的平面型发送传感器,作为允许未聚焦的超声波的传播的平面型接收传感器被用作第二超声波传感器。
    • 38. 发明授权
    • Thin-film transistor array and method for producing the same
    • 薄膜晶体管阵列及其制造方法
    • US06352911B1
    • 2002-03-05
    • US09619675
    • 2000-07-19
    • Seiichi Matsumoto
    • Seiichi Matsumoto
    • H01L2904
    • H01L29/78633
    • In a thin film transistor array, on a transparent insulating substrate made of glass or the like, a plurality of scanning lines is formed of a first conductive film. A plurality of signal lines is formed of a second conductive film and pixel electrodes are formed on a gate insulating film in a region enclosed with adjacent scanning lines and adjacent signal lines. Thin film transistors are coupled to the pixel electrodes, and light shielding films are formed of the first conductive film and form light shielding overlap portions with peripheral portions facing the signal lines of respective pixel electrodes via the gate insulating film. The light shielding film has portions near the both ends thereof along the signal line projected toward a side of the signal line to form correction overlap portions which overlap the signal lines via the gate insulating film. This allows a correction of an interruption in the signal lines to be effectuated without increasing load to the process and without adversely affecting display.
    • 在薄膜晶体管阵列中,在由玻璃等制成的透明绝缘基板上,多条扫描线由第一导电膜形成。 多个信号线由第二导电膜形成,并且像素电极形成在由相邻扫描线和相邻信号线包围的区域中的栅极绝缘膜上。 薄膜晶体管耦合到像素电极,并且光屏蔽膜由第一导电膜形成并且经由栅极绝缘膜形成与各个像素电极的信号线相对的周边部分的遮光重叠部分。 遮光膜沿着朝向信号线的一侧投影的信号线的两端附近具有部分,以形成经由栅极绝缘膜与信号线重叠的校正重叠部分。 这允许校正信号线中的中断,而不会增加对该过程的负担并且不会不利地影响显示。