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    • 33. 发明申请
    • Heterojunction bipolar transistor
    • 异质结双极晶体管
    • US20050037587A1
    • 2005-02-17
    • US10914482
    • 2004-08-09
    • Bertrand MartinetMichel MartyPascal ChevalierAlain Chantre
    • Bertrand MartinetMichel MartyPascal ChevalierAlain Chantre
    • H01L21/331H01L29/08H01L21/8222
    • H01L29/66287H01L29/0817H01L29/66242
    • A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of the collector area a silicon/germanium layer of a second doping type forming a base area; forming above the silicon/germanium layer a sacrificial emitter formed of a material selectively etchable with respect to the silicon/germanium layer and with respect to the layers and consecutively-formed insulating spacers; forming first insulating spacers on the sides of the sacrificial emitter; growing by epitaxy a silicon layer above the exposed portions of the silicon/germanium layer; forming second insulating spacers adjacent to the first spacers and laid on the silicon layer; covering the entire structure with an insulating layer; partially removing the insulating layer above the sacrificial emitter and removing the sacrificial emitter; filling the space previously taken up by the sacrificial emitter with a semiconductor material of the first doping type.
    • 一种用于形成异质结双极晶体管的方法,包括以下步骤:在半导体衬底中形成第一掺杂类型的集电极区域; 通过在集电区域的一部分上方的外延生长形成基区的第二掺杂类型的硅/锗层; 在硅/锗层之上形成由相对于硅/锗层可选择性地蚀刻的材料以及相对于层和连续形成的绝缘间隔物形成的牺牲发射体; 在所述牺牲发射体的侧面上形成第一绝缘间隔物; 通过将硅/锗层的暴露部分上的硅层外延生长; 形成与所述第一间隔物相邻的第二绝缘间隔物并铺设在所述硅层上; 用绝缘层覆盖整个结构; 部分去除牺牲发射体上方的绝缘层并去除牺牲发射极; 用第一掺杂类型的半导体材料填充先前由牺牲发射极占据的空间。