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31. 发明申请

US20110084301A1 PACKAGE-INTEGRATED THIN FILM LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US20110084301A1
公开(公告)日：2011-04-14
申请号：US12969709
申请日：2010-12-16
申请人： John Epler , Paul S. Martin , Michael R. Krames
发明人： John Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L33/48 , H01L33/36
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

32. 发明授权

US07875984B2 Complaint bonding structures for semiconductor devices 有权
标题翻译：用于半导体器件的投诉结合结构
公开(公告)号：US07875984B2
公开(公告)日：2011-01-25
申请号：US12397392
申请日：2009-03-04
申请人： John E. Epler , Michael R. Krames , James G. Neff
发明人： John E. Epler , Michael R. Krames , James G. Neff
IPC分类号： H01L23/48
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/62 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403
摘要： A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.
摘要翻译：在半导体发光器件和安装件之间设置有兼容的结合结构。当半导体发光器件例如通过向半导体发光器件提供压力，加热和/或超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌缩以部分地填充半导体发光器件和安装。在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。在一些实施例中，柔性结合结构是多孔金属层。

33. 发明申请

US20110012147A1 WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A FILTER AND A SCATTERING STRUCTURE 审中-公开
标题翻译：波长转换半导体发光器件，包括滤光片和散射结构
公开(公告)号：US20110012147A1
公开(公告)日：2011-01-20
申请号：US12503506
申请日：2009-07-15
申请人： Serge J. Bierhuizen , Michael R. Krames
发明人： Serge J. Bierhuizen , Michael R. Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , G03B15/05 , G03B2215/0567 , G03B2215/0592 , H01L33/50 , H01L2933/0091
摘要： A semiconductor structure comprises a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting material is disposed over the semiconductor structure. The wavelength converting material is configured to absorb light emitted by the semiconductor structure and emit light of a different wavelength. A filter configured to reflect blue ambient light is disposed over the wavelength converting material. A scattering structure is disposed over the wavelength converting layer. The scattering structure is configured to scatter light. In some embodiments, the scattering structure is a transparent material having a rough surface, containing non-wavelength-converting particles that appear substantially white in ambient light, or including both a rough surface and white particles.
摘要翻译：半导体结构包括设置在n型区域和p型区域之间的发光层。波长转换材料设置在半导体结构上。波长转换材料被配置为吸收由半导体结构发射的光并发射不同波长的光。布置成反射蓝色环境光的滤光器设置在波长转换材料上。散射结构设置在波长转换层上。散射结构被配置为散射光。在一些实施例中，散射结构是具有粗糙表面的透明材料，其包含在环境光中基本上呈白色的非波长转换颗粒，或包括粗糙表面和白色颗粒。

34. 发明申请

US20100264454A1 SEMICONDUCTOR LIGHT EMITTING DEVICE GROWING ACTIVE LAYER ON TEXTURED SURFACE 有权
标题翻译：半导体发光器件在纹理表面上生长活性层
公开(公告)号：US20100264454A1
公开(公告)日：2010-10-21
申请号：US12830885
申请日：2010-07-06
申请人： Sungsoo YI , Nathan F. GARDNER , Michael R. KRAMES , Linda T. ROMANO
发明人： Sungsoo YI , Nathan F. GARDNER , Michael R. KRAMES , Linda T. ROMANO
IPC分类号： H01L33/02 , H01L33/00
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.
摘要翻译：根据本发明的实施例，III族氮化物发光器件的发光层中的至少部分应变消除通过配置其上至少一层器件的表面生长使得该层横向膨胀的表面来提供至少部分放松。该层被称为应变消除层。在一些实施例中，发光层本身是应变消除层，这意味着发光层在允许发光层横向膨胀以减轻应变的表面上生长。在一些实施例中，在发光层之前生长的层是应变消除层。在第一组实施方案中，应变消除层在纹理表面上生长。

35. 发明申请

US20100224902A1 COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的合适的结合结构
公开(公告)号：US20100224902A1
公开(公告)日：2010-09-09
申请号：US12397392
申请日：2009-03-04
申请人： John E. Epler , Michael R. Krames , James G. Neff
发明人： John E. Epler , Michael R. Krames , James G. Neff
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/62 , H01L2224/0401 , H01L2224/0603 , H01L2224/1403
摘要： A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.
摘要翻译：在半导体发光器件和安装件之间设置有兼容的结合结构。当半导体发光器件例如通过向半导体发光器件提供压力，加热和/或超声能量而将半导体发光器件附接到安装件时，柔性结合结构塌缩以部分地填充半导体发光器件和安装。在一些实施例中，柔性接合结构是在接合期间经历塑性变形的多个金属凸块。在一些实施例中，柔性结合结构是多孔金属层。

36. 发明申请

US20100176490A1 METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME 有权
标题翻译：形成半导体材料的松散层的方法，半导体结构，器件和包括其中的工程衬底
公开(公告)号：US20100176490A1
公开(公告)日：2010-07-15
申请号：US12563953
申请日：2009-09-21
申请人： Fabrice LETERTRE , Bruce FAURE , Michael R. Krames , Nathan F. GARDNER
发明人： Fabrice LETERTRE , Bruce FAURE , Michael R. Krames , Nathan F. GARDNER
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02639 , H01L21/02367 , H01L21/02389 , H01L21/02458 , H01L21/0254
摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.
摘要翻译：制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。在沉积第二层半导体材料期间，柔性材料可以回流。可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。还公开了制造半导体结构和器件的方法。在这种方法中形成了新的中间结构。工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

37. 发明申请

US20100109030A1 SERIES CONNECTED FLIP CHIP LEDS WITH GROWTH SUBSTRATE REMOVED 有权
标题翻译：系列连接的切片芯片，带有生长基板去除
公开(公告)号：US20100109030A1
公开(公告)日：2010-05-06
申请号：US12266162
申请日：2008-11-06
申请人： Michael R. KRAMES , John E. EPLER , Daniel A. STEIGERWALD , Tal MARGALITH
发明人： Michael R. KRAMES , John E. EPLER , Daniel A. STEIGERWALD , Tal MARGALITH
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/2654 , H01L27/153
摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.
摘要翻译： LED层生长在蓝宝石衬底上。单个倒装芯片LED通过挖沟或掩模离子注入形成。包含多个LED的模块被切割并安装在底座晶片上。在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。然后去除生长衬底，例如通过激光剥离。在安装之前或之后形成半绝缘层，将LED机械连接在一起。半绝缘层可以通过在衬底和LED层之间离子注入层来形成。可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。然后将底座切成块，以创建包含串联LED的LED模块。

38. 发明申请

US20100032793A1 METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTURES FABRICATED THEREBY 有权
标题翻译：松弛和转移应变层和结构的方法
公开(公告)号：US20100032793A1
公开(公告)日：2010-02-11
申请号：US12341852
申请日：2008-12-22
申请人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
发明人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
IPC分类号： H01L27/00 , H01L21/02 , H01L21/46
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
摘要翻译：本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

39. 发明授权

US07601989B2 LED with porous diffusing reflector 有权
标题翻译： LED带多孔漫反射器
公开(公告)号：US07601989B2
公开(公告)日：2009-10-13
申请号：US11692132
申请日：2007-03-27
申请人： John E. Epler , Hanmin Zhao , Michael R. Krames
发明人： John E. Epler , Hanmin Zhao , Michael R. Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/382 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： In one embodiment, an AlInGaP LED includes a bottom n-type layer, an active layer, a top p-type layer, and a thick n-type GaP layer over the top p-type layer. The thick n-type GaP layer is then subjected to an electrochemical etch process that causes the n-type GaP layer to become porous and light-diffusing. Electrical contact is made to the p-GaP layer under the porous n-GaP layer by providing metal-filled vias through the porous layer, or electrical contact is made through non-porous regions of the GaP layer between porous regions. The LED chip may be mounted on a submount with the porous n-GaP layer facing the submount surface. The pores and metal layer reflect and diffuse the light, which greatly increases the light output of the LED. Other embodiments of the LED structure are described.
摘要翻译：在一个实施例中，AlInGaP LED包括顶部p型层上的底部n型层，有源层，顶部p型层和厚n型GaP层。然后对厚的n型GaP层进行电化学蚀刻工艺，其使得n型GaP层变得多孔和光扩散。通过提供通过多孔层的金属填充的通孔，在多孔n-GaP层下面的p-GaP层进行电接触，或者通过多孔区域之间的GaP层的无孔区域进行电接触。 LED芯片可以安装在多孔n-GaP层面向底座表面的基座上。孔和金属层反射和扩散光，这大大增加了LED的光输出。描述LED结构的其它实施例。

40. 发明申请

US20090155943A1 Luminescent Ceramic Element For A Light Emitting Device 有权
标题翻译：发光陶瓷元件用于发光装置
公开(公告)号：US20090155943A1
公开(公告)日：2009-06-18
申请号：US12390564
申请日：2009-02-23
申请人： Michael R. Krames , Peter J. Schmidt
发明人： Michael R. Krames , Peter J. Schmidt
IPC分类号： H01L21/02
CPC分类号： C09K11/7774 , C04B35/44 , C04B35/597 , C04B35/63416 , C04B35/645 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/5445 , C04B2235/6025 , C04B2235/6581 , C04B2235/662 , C09K11/0883 , C09K11/7721 , C09K11/7731 , C09K11/7734 , C09K11/7792 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 μm.
摘要翻译：包括设置在n型区域和p型区域之间的发光层的半导体结构附着到包括向器件提供机械支撑的主体的复合衬底和包括发光材料的陶瓷层。在一些实施方案中，化合物基底包括其上生长半导体结构的结晶晶种层。陶瓷层设置在种子层和主体之间。在一些实施方案中，在常规生长衬底上的结构生长之后，化合物衬底附着到半导体结构。在一些实施例中，复合衬底与半导体结构间隔开，并且不提供对结构的机械支撑。在一些实施例中，陶瓷层的厚度小于500μm。

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