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31. 发明申请

US20080164948A1 BIASING CURRENT TO SPEED UP CURRENT MIRROR SETTLING TIME 有权
标题翻译：偏移电流以加快电流反射时间
公开(公告)号：US20080164948A1
公开(公告)日：2008-07-10
申请号：US11619729
申请日：2007-01-04
申请人： Gabriele Pelli , Lorenzo Bedarida , Massimiliano Frulio , Andrea Bettini
发明人： Gabriele Pelli , Lorenzo Bedarida , Massimiliano Frulio , Andrea Bettini
IPC分类号： H03F3/04
CPC分类号： H03F3/343 , G09G3/20 , G09G3/3216 , G09G3/3225
摘要： A current mirror circuit includes a first current-mirror transistor coupled to a second current-mirror transistor. A load is coupled to the second current-mirror transistor. A first current source is coupled to the first current-mirror transistor to cause a bias current to flow through the first current-mirror transistor and a second current source is coupled to the second current-mirror transistor and in parallel with the load to shunt the bias current away from the load.
摘要翻译：电流镜电路包括耦合到第二电流镜晶体管的第一电流镜晶体管。负载耦合到第二电流镜晶体管。第一电流源耦合到第一电流镜晶体管以引起偏置电流流过第一电流镜晶体管，并且第二电流源耦合到第二电流镜晶体管并且与负载并联以分流偏置电流远离负载。

32. 发明申请

US20080123415A1 LOW VOLTAGE COLUMN DECODER SHARING A MEMORY ARRAY P-WELL 有权
标题翻译：低电压柱解码器共享存储阵列P-WELL
公开(公告)号：US20080123415A1
公开(公告)日：2008-05-29
申请号：US11557627
申请日：2006-11-08
申请人： Massimiliano Frulio , Stefano Surico , Andrea Sacco , Davide Manfre
发明人： Massimiliano Frulio , Stefano Surico , Andrea Sacco , Davide Manfre
IPC分类号： G11C16/14 , G11C16/04
CPC分类号： G11C16/08
摘要： A plurality of memory sub-arrays are formed in a p-well region. Each of the memory sub-arrays has at least one first-level column decoder that includes a plurality of low-voltage MOS selector transistors that are also formed within the p-well. A last-level decoder is formed outside of the p-well region and includes high-voltage MOS transistors to provide an output signal to one of an array of sense amplifiers. During a memory erase mode of operation, a high voltage is provided to bias the p-well region and a plurality of high-voltage switches are activated to provide a high voltage to gate terminals of the selector transistor in the first-level column decoders. One or more intermediate-level column decoders are formed as low-voltage selector transistors in the p-well between the first-level column decoder and the last-level column decoder. Each of the intermediate-level column decoders also has a high-voltage switch that is activated during a memory erase mode of operation to provide a high voltage to gate terminals of the intermediate-level column decoders.
摘要翻译：多个存储器子阵列形成在p阱区域中。每个存储器子阵列具有至少一个第一级列解码器，其包括也形成在p阱内的多个低压MOS选择晶体管。最后一级解码器形成在p阱区域外部，并且包括高电压MOS晶体管，以向读出放大器阵列之一提供输出信号。在存储器擦除操作模式期间，提供高电压以偏置p阱区域，并且激活多个高压开关以向第一级列解码器中的选择器晶体管的栅极端提供高电压。在第一级列解码器和最后一级列解码器之间的p阱中形成一个或多个中间级列解码器作为低电压选择晶体管。每个中间级列解码器还具有在存储器擦除操作模式期间激活的高压开关，以向中级列解码器的栅极端提供高电压。

33. 发明申请

US20070076476A1 Method and system for regulating a program voltage value during multilevel memory device programming 有权
标题翻译：用于在多级存储器件编程期间调节编程电压值的方法和系统
公开(公告)号：US20070076476A1
公开(公告)日：2007-04-05
申请号：US11635160
申请日：2006-12-07
申请人： Massimiliano Frulio , Simone Bartoli , Davide Manfre' , Andrea Sacco
发明人： Massimiliano Frulio , Simone Bartoli , Davide Manfre' , Andrea Sacco
IPC分类号： G11C16/04
CPC分类号： G11C16/12 , G11C5/145 , G11C11/5628 , G11C16/04 , G11C16/30 , G11C16/3459 , G11C29/02 , G11C29/021 , G11C29/028
摘要： Regulating a program voltage value during multilevel memory device programming includes utilizing a program path duplicate in an output pump regulator circuit. Further, the output pump regulator circuit is utilized to provide a regulated program voltage for memory cell programming, the regulated program voltage correcting for a program path voltage drop.
摘要翻译：在多级存储器件编程期间调节编程电压值包括在输出泵调节器电路中使用程序路径副本。此外，输出泵调节器电路用于为存储器单元编程提供调节的编程电压，用于编程路径电压降的调节的编程电压。

34. 发明授权

US07184311B2 Method and system for regulating a program voltage value during multilevel memory device programming 有权
标题翻译：用于在多级存储器件编程期间调节编程电压值的方法和系统
公开(公告)号：US07184311B2
公开(公告)日：2007-02-27
申请号：US11123754
申请日：2005-05-05
申请人： Massimiliano Frulio , Simone Bartoli , Davide Manfre′ , Andrea Sacco
发明人： Massimiliano Frulio , Simone Bartoli , Davide Manfre′ , Andrea Sacco
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C11/5628 , G11C7/04 , G11C16/04 , G11C16/12 , G11C16/30 , G11C29/021 , G11C29/028
摘要： Regulating a program voltage value during multilevel memory device programming includes utilizing a program path duplicate in an output pump regulator circuit. Further, the output pump regulator circuit is utilized to provide a regulated program voltage for memory cell programming, the regulated program voltage correcting for a program path voltage drop and compensating for temperature variation.
摘要翻译：在多级存储器件编程期间调节编程电压值包括在输出泵调节器电路中使用程序路径副本。此外，输出泵调节器电路用于提供用于存储器单元编程的调节编程电压，用于编程路径电压降的校准编程电压并补偿温度变化。

35. 发明申请

US20060077709A1 System and method for avoiding offset in and reducing the footprint of a non-volatile memory 有权
标题翻译：用于避免偏移和减少非易失性存储器的占用空间的系统和方法
公开(公告)号：US20060077709A1
公开(公告)日：2006-04-13
申请号：US11126473
申请日：2005-05-11
申请人： Massimiliano Frulio , Riccardo Reggiori , Andrea Sacco , Luca Figini
发明人： Massimiliano Frulio , Riccardo Reggiori , Andrea Sacco , Luca Figini
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C16/3436
摘要： A system and method for avoiding offset in and reducing the footprint of a non-volatile memory that has a plurality of memory bank circuits. Each memory bank circuit has memory cells coupled to sense amplifiers, row and column decoders coupled to the memory cells, and bias circuits coupled to the sense amplifiers. The system includes a reference cell matrix coupled to each of the plurality of memory bank circuits. The reference cell matrix is configured to provide reference cell current for each of the plurality of memory bank circuits.
摘要翻译：一种用于避免偏移并减小具有多个存储器组电路的非易失性存储器的占位面积的系统和方法。每个存储体电路具有耦合到读出放大器，耦合到存储器单元的行和列解码器以及耦合到读出放大器的偏置电路的存储单元。该系统包括耦合到多个存储体电路中的每一个的参考单元矩阵。参考单元矩阵被配置为为多个存储体电路中的每一个提供参考单元电流。

36. 发明申请

US20050189983A1 High precision digital-to-analog converter with optimized power consumption 有权
公开(公告)号：US20050189983A1
公开(公告)日：2005-09-01
申请号：US11119675
申请日：2005-05-02
申请人： Stefano Sivero , Lorenzo Bedarida , Massimiliano Frulio
发明人： Stefano Sivero , Lorenzo Bedarida , Massimiliano Frulio
IPC分类号： G05F1/10 , G05F3/02 , H02M20060101 , H02M3/07 , H02M5/42 , H03M1/76
CPC分类号： H02M3/07 , H03M1/765
摘要： A regulated charge pump circuit having two-way switching means that switches between a first feedback pathway that provides a precise and stable voltage output and a second feedback pathway that provides a regulated voltage output with low current consumption from the power source. The first feedback pathway maintains a precise voltage output by regulating a pass device that draws current to the voltage output. The second feedback pathway regulates the voltage output by controlling the connection of a clock input to the charge pump. A variable resistor is used to set the regulated level of the voltage output. A digital-to analog converter is formed by using a combination logic circuit to convert a digital input signal to a control signal for the variable resistor.

37. 发明授权

US06771200B2 DAC-based voltage regulator for flash memory array 有权
标题翻译：基于DAC的闪存阵列电压调节器
公开(公告)号：US06771200B2
公开(公告)日：2004-08-03
申请号：US10407647
申请日：2003-04-03
申请人： Massimiliano Frulio , Stefano Sivero , Simone Bartozi , Sabina Mognoni
发明人： Massimiliano Frulio , Stefano Sivero , Simone Bartozi , Sabina Mognoni
IPC分类号： H03M166
CPC分类号： H02M3/073 , G11C5/145 , G11C16/30 , H02M2001/0025
摘要： A DAC-based voltage regulator system for a non-volatile memory device comprises a charge pump circuit having an enable input and a voltage output node. A voltage-to-current converter has an input coupled to the voltage output node and an output coupled to a virtual ground node. A current source is coupled to the virtual ground node and sinks one of a plurality of currents in response to states of a plurality of digital input signals. A transconductance amplifier has an inverting input at the virtual ground node, a non-inverting input coupled to a reference voltage potential, and an output. A comparator has a first input coupled to the output of the transconductance amplifier, a second input coupled to a reference voltage potential, and an output coupled to the enable input of said charge pump.
摘要翻译：用于非易失性存储器件的基于DAC的电压调节器系统包括具有使能输入和电压输出节点的电荷泵电路。电压 - 电流转换器具有耦合到电压输出节点的输入和耦合到虚拟接地节点的输出。电流源耦合到虚拟接地节点并且响应于多个数字输入信号的状态而吸收多个电流中的一个电流。跨导放大器在虚拟接地节点处具有反相输入，耦合到参考电压电位的非反相输入和输出。比较器具有耦合到跨导放大器的输出的第一输入，耦合到参考电压电位的第二输入和耦合到所述电荷泵的使能输入的输出。

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