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31. 发明申请

WO2005073429A2 METHOD AND APPARATUS FOR SELECTIVELY CHANGING THIN FILM COMPOSITION DURING ELECTROLESS DEPOSITION IN A SINGLE CHAMBER 审中-公开
标题翻译：在一个单室中电沉积期间选择性地改变薄膜组合物的方法和装置
公开(公告)号：WO2005073429A2
公开(公告)日：2005-08-11
申请号：PCT/US2005/002284
申请日：2005-01-25
申请人： APPLIED MATERIALS, INC. , WEIDMAN, Timothy W. , PANCHAM, Ian , LUBOMIRSKY, Dmitry , SHANMUGASUNDRAM, Arulkumar , SHACHAM-DIAMAND, Yosef , MOGHADAM, Farhad
发明人： WEIDMAN, Timothy W. , PANCHAM, Ian , LUBOMIRSKY, Dmitry , SHANMUGASUNDRAM, Arulkumar , SHACHAM-DIAMAND, Yosef , MOGHADAM, Farhad
IPC分类号： C23C18/16
CPC分类号： C23C18/1683 , C23C18/1619 , C23C18/1651 , C23C18/50 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76874 , Y10T428/12
摘要： A method and apparatus for electrolessly depositing a multilayer film using a processing solution(s) to clean and then electrolessly deposit a metal film having discrete or varying composition onto a conductive surface using a single processing cell. The process includes an in-situ cleaning step to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen between the cleaning and electroless deposition process steps. In one aspect, the chemical components used in the processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids. The continuous electroless deposition process may be used to form a first layer containing at least two of the following elements cobalt, tungsten, phosphorus or boron; and a second layer contains at least two of the following elements cobalt, boron or phosphorus.
摘要翻译：一种使用处理溶液无电沉积多层膜的方法和装置，以使用单个处理池清洁然后将具有离散或变化组成的金属膜无电沉积到导电表面上。该方法包括通过最小化或防止在清洁和无电沉积工艺步骤之间将导电表面暴露于氧气来最小化导电表面上的氧化物形成的原位清洁步骤。在一个方面，选择在处理溶液中使用的化学组分，使得各种化学组分的相互作用不会急剧地改变每种相互作用流体的期望性质。连续无电沉积工艺可用于形成含有至少两种以下元素钴，钨，磷或硼的第一层; 并且第二层含有钴，硼或磷中的至少两种元素。

32. 发明申请

WO2010006279A2 CHAMBER COMPONENTS FOR CVD APPLICATIONS 审中-公开
标题翻译：用于CVD应用的腔室组件
公开(公告)号：WO2010006279A2
公开(公告)日：2010-01-14
申请号：PCT/US2009/050282
申请日：2009-07-10
申请人： APPLIED MATERIALS, INC. , HINCKLEY, Kimberly , ZHANG, Yizhen , HERNANDEZ, Manuel , BANG, Won , LUBOMIRSKY, Dmitry
发明人： HINCKLEY, Kimberly , ZHANG, Yizhen , HERNANDEZ, Manuel , BANG, Won , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/452 , C23C16/4481 , C23C16/45512 , C23C16/45591
摘要： Apparatus for use with a processing chamber are provided. In one aspect a blocker plate is provided including an annular plate having an inner portion of a first thickness and the annular plate having an aperture pattern including a center portion, a first patterned portion concentrically disposed around the center portion and comprising a first plurality of apertures having a first number of apertures, an second patterned portion concentrically disposed around the first patterned portion and comprising a second plurality of apertures having a second number of apertures greater than the first number of apertures, a perimeter portion concentrically disposed around the second patterned portion, and an outer portion comprising a raised concentric portion disposed on a perimeter of the annular plate. In another aspect, a second, third, and fourth blocker plates are provided. Additionally, a mixing apparatus and a liquid evaporating apparatus for use in a processing chamber are provided.
摘要翻译：提供了与处理室一起使用的设备。在一个方面中，提供一种阻挡板，其包括具有第一厚度的内部的环形板，并且环形板具有包括中心部分的孔图案，第一图案部分同心地围绕中心部分设置并且包括第一多个孔具有第一数量的孔，同心地设置在第一图案部分周围的第二图案部分，以及包括具有比第一数量的孔大的第二数量的孔的第二多个孔，围绕第二图案部分同心布置的周边部分，以及外部部分，其包括设置在环形板的周边上的凸起同心部分。另一方面，提供了第二，第三和第四阻挡板。另外，还提供了用于处理室的混合装置和液体蒸发装置。

33. 发明申请

WO2009137272A2 FLOWABLE DIELECTRIC EQUIPMENT AND PROCESSES 审中-公开
标题翻译：流动电介质设备和工艺
公开(公告)号：WO2009137272A2
公开(公告)日：2009-11-12
申请号：PCT/US2009/041402
申请日：2009-04-22
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
发明人： LUBOMIRSKY, Dmitry , LIANG, Qiwei , YANG, Jang Gyoo
IPC分类号： H05H1/34 , H01L21/00 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/452 , C23C16/45574 , C23C16/507 , H01J37/32082 , H01J37/32357 , H01J37/3244
摘要： Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.
摘要翻译：描述了可以包括具有能够保持不同于外部室压力的内部室压力的内部的处理室的基板处理系统。该系统还可以包括可操作以在处理室内部产生等离子体的远程等离子体系统。此外，系统可以包括可操作以将第一处理气体从远程等离子体系统输送到处理室的内部的第一处理气体通道，以及可操作以输送未被处理室处理的第二处理气体的第二处理气体通道远程等离子体系统。第二工艺气体通道具有通向处理室内部的远端，并且至少部分地被第一工艺气体通道包围。

34. 发明申请

WO2009061737A1 COUNTER-BALANCED SUBSTRATE SUPPORT 审中-公开
标题翻译：计数平衡基板支持
公开(公告)号：WO2009061737A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/082365
申请日：2008-11-04
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , TRAN, Toan, Q. , TSUEI, Lun , HERNANDEZ, Manuel, A. , FLOYD, Kirby, H. , YIEH, Ellie Y.
发明人： LUBOMIRSKY, Dmitry , TRAN, Toan, Q. , TSUEI, Lun , HERNANDEZ, Manuel, A. , FLOYD, Kirby, H. , YIEH, Ellie Y.
IPC分类号： H01L21/00 , G03F7/20
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/68742 , H01L21/68792
摘要： A semiconductor processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure and a pumping system coupled to the chamber and adapted to remove material from trie processing chamber, and a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the chamber is rigidly or rotatably coupled to the substrate support shaft. A motor coupled to the bracket vertically translates the substrate support pedestal, shaft and bracket closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support, thereby reducing the deflection of the bracket and the substrate support.
摘要翻译：具有能够将内部室压力保持在低于环境大气压力的内部的半导体处理室以及耦合到该室并适于从三维处理室移除材料的泵送系统以及衬底支撑基座，其中衬底支撑基座刚性地联接通过延伸穿过处理室的壁的衬底支撑轴。位于室外的支架刚性或可旋转地联接到基板支撑轴。耦合到支架的马达将基板支撑基座，轴和支架垂直地平移到更靠近处理板。安装在托架的端部上的活塞提供与由内部室压力变化产生的倾斜力的反平衡力并引起支架和基板支撑件位置的偏转，从而减小支架的偏转和基板支撑。

35. 发明申请

WO2007140421A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A9
公开(公告)日：2008-12-31
申请号：PCT/US2007069996
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201).
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前置分布系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。可以包括原位等离子体产生系统以在从沉积腔（201）提供的电介质前体在沉积室（201）中产生等离子体。

36. 发明申请

WO2007140426A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140426A3
公开(公告)日：2008-12-11
申请号：PCT/US2007070001
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201), a substrate stage in the deposition chamber (201) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising a dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201). An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber (201) from the dielectric precursors supplied to the deposition chamber (201)
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前体分配系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。还可以包括原位等离子体产生系统，以从沉积室（201）中提供的电介质前体在沉积室（201）中产生等离子体，

37. 发明申请

WO2007140421A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A3
公开(公告)日：2008-10-30
申请号：PCT/US2007069996
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201)
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前置分布系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。可以包括原位等离子体产生系统以在从沉积腔（201）提供的电介质前体在沉积室（201）中产生等离子体，

38. 发明申请

WO2007140425A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质填料工艺室
公开(公告)号：WO2007140425A9
公开(公告)日：2008-03-27
申请号：PCT/US2007070000
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： H01L21/76
CPC分类号： C23C16/509 , C23C16/401 , C23C16/452 , C23C16/45514 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J2237/2001
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了由电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，在沉积室中的衬底台以保持衬底，以及耦合到沉积室的远程等离子体产生系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以定位在基板台上方并且侧入口可以径向分布在基板台周围。反应性自由基前体可以通过顶部入口供应到沉积室。还可以包括原位等离子体发生系统以从供应到沉积室的电介质前体在沉积室中产生等离子体。

39. 发明申请

WO2007149991A2 DIELECTRIC DEPOSITION AND ETCH BACK PROCESSES FOR BOTTOM UP GAPFILL 审中-公开
标题翻译：用于底盖的介电沉积和回填工艺
公开(公告)号：WO2007149991A2
公开(公告)日：2007-12-27
申请号：PCT/US2007/071804
申请日：2007-06-21
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , NEMANI, Srinivas, D. , YIEH, Ellie
发明人： LUBOMIRSKY, Dmitry , NEMANI, Srinivas, D. , YIEH, Ellie
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.
摘要翻译：描述了减少电介质层中的膜破裂的方法。所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

40. 发明申请

WO2005038094A2 APPARATUS FOR ELECTROLESS DEPOSITION 审中-公开
标题翻译：用于化学沉积的装置
公开(公告)号：WO2005038094A2
公开(公告)日：2005-04-28
申请号：PCT/US2004/034456
申请日：2004-10-15
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , SHANMUGASUNDRAM, Arulkumar , PANCHAM, Ian, A. , LOPATIN, Sergey
发明人： LUBOMIRSKY, Dmitry , SHANMUGASUNDRAM, Arulkumar , PANCHAM, Ian, A. , LOPATIN, Sergey
IPC分类号： C25D7/12
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译：本发明的实施例通常提供流体处理平台。该平台包括具有基板传送机器人的主框架，在主框架上的至少一个基板清洁单元以及至少一个处理外壳。处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，定位在外壳内的第一流体处理单元，定位成支撑用于在第一流体处理单元中处理的基板的第一基板头组件，位于所述外壳中的流体处理单元，定位成支撑用于在所述第二流体处理单元中处理的基板的第二头部组件以及定位在所述第一和第二流体处理单元之间并且被配置为在所述流体处理单元和大型机器人。

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