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31. 发明授权

US07936591B2 Magnetoresistive random access memory 有权
标题翻译：磁阻随机存取存储器
公开(公告)号：US07936591B2
公开(公告)日：2011-05-03
申请号：US12356722
申请日：2009-01-21
申请人： Kiyotaro Itagaki , Yoshihiro Ueda
发明人： Kiyotaro Itagaki , Yoshihiro Ueda
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1673
摘要： A word line voltage is applied to a plurality of word lines. A read/write voltage is applied to a plurality of bit lines. The read/write voltage is applied to a plurality of source lines. A word line selector selects the word line and applies the word line voltage. A driver applies a predetermined voltage to the bit line and the source line, thereby supplying a current to the memory cell. A read circuit reads a first current having flowed through the memory cell, and determines data stored in the memory cell. When performing the read, the driver supplies a second current to second bit lines among other bit lines, which are adjacent to the first bit line through which the first current has flowed. The second current generates a magnetic field in a direction to suppress a write error in the memory cell from which data is to be read.
摘要翻译：字线电压被施加到多个字线。读/写电压被施加到多个位线。读/写电压被施加到多条源极线。字线选择器选择字线并施加字线电压。驱动器将预定电压施加到位线和源极线，从而向存储器单元提供电流。读取电路读取已经流过存储器单元的第一电流，并且确定存储在存储单元中的数据。当执行读取时，驱动器向与第一电流流过的第一位线相邻的其它位线中的第二位线提供第二电流。第二电流在抑制要从其读取数据的存储单元中的写入错误的方向上产生磁场。

32. 发明申请

US20110069552A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DATA READ THEREIN 有权
标题翻译：非线性半导体存储器件及其数据读取方法
公开(公告)号：US20110069552A1
公开(公告)日：2011-03-24
申请号：US12684349
申请日：2010-01-08
申请人： Kiyotaro ITAGAKI , Yoshiaki Fukuzumi , Yoshihisa Iwata
发明人： Kiyotaro ITAGAKI , Yoshiaki Fukuzumi , Yoshihisa Iwata
IPC分类号： G11C16/04
CPC分类号： H01L27/11578 , G11C16/26 , G11C16/32 , G11C16/3418 , H01L27/11582
摘要： A nonvolatile semiconductor memory device comprises: a memory cell array having a plurality of memory strings each having a plurality of memory cells connected in series; and a control circuit configured to execute a read operation for reading data from the memory cells included in a selected memory string from among the plurality of memory strings. During the read operation, the control circuit is configured to apply a first voltage to a gate of at least one of the memory cells in a non-selected memory string not subject to the read operation, and apply a second voltage lower than the first voltage to a gate of another of the memory cells in the non-selected memory string not subject to the read operation.
摘要翻译：非易失性半导体存储器件包括：具有多个存储器串的存储单元阵列，每个存储器串均具有串联连接的多个存储器单元; 以及控制电路，被配置为执行用于从所述多个存储器串中的所选择的存储器串中包括的存储单元读取数据的读取操作。在读取操作期间，控制电路被配置为将第一电压施加到不经过读取操作的未选择的存储器串中的至少一个存储器单元的栅极，并施加低于第一电压的第二电压到没有进行读取操作的未选择的存储器串中的另一个存储器单元的门。

33. 发明申请

US20090190391A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权
标题翻译：磁力随机访问存储器
公开(公告)号：US20090190391A1
公开(公告)日：2009-07-30
申请号：US12356722
申请日：2009-01-21
申请人： Kiyotaro ITAGAKI , Yoshihiro UEDA
发明人： Kiyotaro ITAGAKI , Yoshihiro UEDA
IPC分类号： G11C11/02 , G11C11/416 , G11C8/08
CPC分类号： G11C11/1675 , G11C11/1673
摘要： A word line voltage is applied to a plurality of word lines. A read/write voltage is applied to a plurality of bit lines. The read/write voltage is applied to a plurality of source lines. A word line selector selects the word line and applies the word line voltage. A driver applies a predetermined voltage to the bit line and the source line, thereby supplying a current to the memory cell. A read circuit reads a first current having flowed through the memory cell, and determines data stored in the memory cell. When performing the read, the driver supplies a second current to second bit lines among other bit lines, which are adjacent to the first bit line through which the first current has flowed. The second current generates a magnetic field in a direction to suppress a write error in the memory cell from which data is to be read.
摘要翻译：字线电压被施加到多个字线。读/写电压施加到多个位线。读/写电压被施加到多条源极线。字线选择器选择字线并施加字线电压。驱动器将预定电压施加到位线和源极线，从而向存储器单元提供电流。读取电路读取已经流过存储器单元的第一电流，并且确定存储在存储单元中的数据。当执行读取时，驱动器向与第一电流流过的第一位线相邻的其它位线中的第二位线提供第二电流。第二电流在抑制要从其读取数据的存储单元中的写入错误的方向上产生磁场。

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