专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20150068594A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20150068594A1
公开(公告)日：2015-03-12
申请号：US14399018
申请日：2012-10-15
申请人： Aya Nishiyama , Hiroyuki Fuchigami , Hidetada Tokioka
发明人： Aya Nishiyama , Hiroyuki Fuchigami , Hidetada Tokioka
IPC分类号： H01L31/0236 , H01L31/0368 , H01L31/18 , H01L31/0216
CPC分类号： H01L31/02363 , H01L31/02168 , H01L31/03685 , H01L31/0747 , H01L31/186 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： To provide a solar cell that reduces occurrence of a defect and has high photoelectric conversion efficiency. The solar cell includes a silicon substrate such as an n-type single-crystal silicon substrate single crystal with pyramid-shaped irregularities P formed thereon, and an amorphous or microcrystal semiconductor layer formed on the single-crystal silicon substrate. A flat part F is formed in a valley portion of the pyramid-shaped irregularities P provided on a surface of the single-crystal silicon substrate. With this configuration, a steep angle of 70° to 85° of a concave portion formed by a substantially (111) surface can be widened to between 115° and 135°. Accordingly, a change of atomic step morphology attributable to a rounded shape can be eliminated, thereby enabling to reduce epitaxial growth and defects in the amorphous or microcrystal semiconductor layer.
摘要翻译：提供减少缺陷发生并具有高光电转换效率的太阳能电池。太阳能电池包括形成在其上的金字塔形凹凸P的n型单晶硅衬底单晶硅，以及形成在单晶硅衬底上的非晶或微晶半导体层的硅衬底。在设置在单晶硅基板的表面上的棱锥状的凹凸P的谷部形成有平坦部F. 利用这种构造，由大致（111）表面形成的凹部的70°至85°的陡峭角度可以加宽到115°和135°之间。因此，可以消除归因于圆形形状的原子台阶形态的变化，从而能够减少非晶或微晶半导体层中的外延生长和缺陷。

32. 发明申请

US20150007867A1 PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOELECTRIC CONVERSION MODULE 有权
标题翻译：光电转换装置及其制造方法及光电转换模块
公开(公告)号：US20150007867A1
公开(公告)日：2015-01-08
申请号：US14373759
申请日：2013-01-31
申请人： Hidetada Tokioka , Takehiko Sato
发明人： Hidetada Tokioka , Takehiko Sato
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035272 , H01L31/02167 , H01L31/022441 , H01L31/0682 , H01L31/1804 , H01L31/1824 , Y02E10/547 , Y02P70/521
摘要： A photoelectric conversion device includes an n-type semiconductor layer and a p-type semiconductor layer, a collecting electrode formed on the n-type semiconductor layer, and a collecting electrode formed on the p-type semiconductor layer, on a back surface opposite to a light receiving surface of an n-type crystalline silicon substrate, and an n-type semiconductor region on a surface on a light receiving surface side of the n-type crystalline silicon substrate, wherein in the n-type semiconductor region, an n-type semiconductor region that is opposed to the n-type semiconductor layer with the n-type crystalline silicon substrate therebetween and an n-type semiconductor region that is opposed to the p-type semiconductor layer with the n-type crystalline silicon substrate therebetween have different average impurity concentrations.
摘要翻译：光电转换装置包括n型半导体层和p型半导体层，形成在n型半导体层上的集电电极和形成在p型半导体层上的集电电极， n型晶体硅衬底的光接收表面和n型晶体硅衬底的受光面侧表面上的n型半导体区域，其中在n型半导体区域中，与其间具有n型晶体硅衬底的n型半导体层相对的n型半导体区域和与其间具有n型晶体硅衬底的p型半导体层相对的n型半导体区域具有不同的平均杂质浓度。

33. 发明授权

US08546682B2 Photoelectric converter and manufacturing method thereof, and photoelectric conversion module 有权
标题翻译：光电转换器及其制造方法以及光电转换模块
公开(公告)号：US08546682B2
公开(公告)日：2013-10-01
申请号：US13334892
申请日：2011-12-22
申请人： Kyozo Kanamoto , Hirofumi Konishi , Hidetada Tokioka , Mikio Yamamuka , Hiroyuki Fuchigami
发明人： Kyozo Kanamoto , Hirofumi Konishi , Hidetada Tokioka , Mikio Yamamuka , Hiroyuki Fuchigami
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/056 , H01L31/1884 , Y02E10/52 , Y02E10/548
摘要： A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts. A width of a low carrier concentration region in a film thickness direction, in which a concentration of a free carrier formed near at least one of an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the n-type-transparent-conductive-oxide-film and an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the second p-type-semiconductor-layer is equal to or lower than 1×1018 cm−3, is equal to or less than 5 nanometers.
摘要翻译：一种光电转换器，其中在包括第一p型半导体层和第一n型半导体层的第一光电转换层和包括第二p型半导体层的第二光电转换层之间设置中间层型半导体层和第二n型半导体层。中间层包括与第一n型半导体层接触的n型透明导电氧化物膜和与第二p型半导体层接触的p型透明导电氧化物膜，层分别具有等于或高于1.5电子伏特的带隙。在膜厚度方向上的低载流子浓度区域的宽度，其中形成在p型透明导电氧化物膜与n相接触的界面中的至少一个附近形成的自由载流子的浓度 p型透明导电氧化物膜和p型透明导电氧化物膜与第二p型半导体层接触的界面等于或低于1×1018cm -3，等于或小于5纳米。

34. 发明申请

US20110079272A1 THIN-FILM PHOTOELECTRIC CONVERTER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜光电转换器及其制造方法
公开(公告)号：US20110079272A1
公开(公告)日：2011-04-07
申请号：US12997027
申请日：2009-06-03
申请人： Hidetada Tokioka , Hiroya Yamarin
发明人： Hidetada Tokioka , Hiroya Yamarin
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/02366 , H01L31/03685 , H01L31/046 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A thin-film photoelectric converter in which a first electrode layer formed of a transparent conductive material, a photoelectric conversion layer for photoelectric conversion, and a second electrode layer formed of a conductive material that reflects light are stacked in that order on an insulating light-transmitting substrate. The photoelectric conversion layer and the second electrode layer are divided by dividing grooves into islands that form a plurality of photoelectric conversion cells separated from each other, adjacent ones of the plurality of photoelectric conversion cells separated by the dividing grooves being electrically connected in series. The photoelectric conversion layer includes: a first semiconductor layer including a microcrystalline structure; and a second semiconductor layer including an amorphous structure, the second semiconductor layer being disposed so as to surround all side wall portions of the first semiconductor layer that extend in in-plane directions of the insulating light-transmitting substrate.
摘要翻译：一种薄膜光电转换器，其中由透明导电材料形成的第一电极层，用于光电转换的光电转换层和由反射光的导电材料形成的第二电极层依次层叠在绝缘发光层上，透射基板。光电转换层和第二电极层被划分成岛，形成多个彼此分离的光电转换单元的岛，由分隔槽分离的相邻的多个光电转换单元串联电连接。光电转换层包括：包含微晶结构的第一半导体层; 以及包括非晶结构的第二半导体层，所述第二半导体层被布置为围绕在所述绝缘透光基板的面内方向上延伸的所述第一半导体层的所有侧壁部分。

35. 发明申请

US20070241336A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20070241336A1
公开(公告)日：2007-10-18
申请号：US11734390
申请日：2007-04-12
申请人： Hidetada TOKIOKA , Naoki Nakagawa , Masafumi Agari
发明人： Hidetada TOKIOKA , Naoki Nakagawa , Masafumi Agari
IPC分类号： H01L29/04
CPC分类号： H01L27/1214 , H01L29/78645
摘要： In first and second gate electrodes constituting a gate electrode, the gate length of the second gate electrode is set shorter than the gate length of the first gate electrode and short enough to produce the short channel effect. The threshold voltage of a second transistor corresponding to the second gate electrode can thereby be made lower than the threshold voltage of a first transistor corresponding to the first gate electrode. When the same voltage is applied to the first and second gate electrodes, an electric field concentration at the channel edge on the drain side is reduced. This in result reduces the channel length modulation effect.
摘要翻译：在构成栅电极的第一和第二栅电极中，第二栅电极的栅极长度被设定为短于第一栅电极的栅极长度，并且足够短以产生短沟道效应。可以使与第二栅电极对应的第二晶体管的阈值电压低于与第一栅电极对应的第一晶体管的阈值电压。当对第一和第二栅极施加相同的电压时，漏极侧的沟道边缘处的电场浓度降低。这在结果中减少了通道长度调制效应。

36. 发明授权

US07242378B2 Image display device supplied with digital signal and image display method 有权
标题翻译：具有数字信号和图像显示方式的图像显示装置
公开(公告)号：US07242378B2
公开(公告)日：2007-07-10
申请号：US10838248
申请日：2004-05-05
申请人： Masashi Okabe , Masafumi Agari , Hidetada Tokioka , Ryuichi Hashido
发明人： Masashi Okabe , Masafumi Agari , Hidetada Tokioka , Ryuichi Hashido
IPC分类号： G09G3/30
CPC分类号： G09G3/3283 , G09G3/2018 , G09G3/2022 , G09G3/2081 , G09G3/325 , G09G2300/0842 , G09G2300/0861 , G09G2310/027 , G09G2330/028
摘要： A current supply circuit includes a bit select circuit selectively providing even-numbered bits or odd-numbered bits of eight bit image data, and supplies a gray-scale current corresponding to the bits provided from the bit select circuit to a pixel. In a one-frame period, a time length for supplying a current corresponding to the even-numbered bits to the light-emitting element is set twice as large as a time length for supplying a current corresponding to the odd-numbered bits. By setting 16 levels of the gray-scale current for four bits, a current-time product of a current passing through the light-emitting element during the one-frame period can be controlled to 256 levels for eight bits. Thereby, an image display device provided at each of the pixels with the light-emitting element can reduce sizes of circuits generating the gray-scale current in accordance with a digital signal.
摘要翻译：电流供给电路包括选择性地提供八位图像数据的偶数位或奇数位的位选择电路，并且将与从比特选择电路提供的比特相对应的灰度级电流提供给像素。在一帧周期中，将与偶数位对应的电流提供给发光元件的时间长度被设置为用于提供与奇数位相对应的电流的时间长度的两倍。通过将灰度电流的16个电平设置为四位，在一帧周期期间通过发光元件的电流的当前时间积可被控制为256位，为8位。由此，在每个像素上设置有发光元件的图像显示装置可以根据数字信号减小产生灰度电流的电路的尺寸。

37. 发明申请

US20060051943A1 Method and producing thin-film semicoductor and production device 失效
标题翻译：方法生产薄膜半导体和生产装置
公开(公告)号：US20060051943A1
公开(公告)日：2006-03-09
申请号：US10530026
申请日：2004-08-17
申请人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
发明人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
IPC分类号： H01L21/20 , B23K26/00
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/78675
摘要： A method for manufacturing a thin-film semiconductor includes polycrystallization to focus visible light pulse laser into a line shape on a surface of an object to be irradiated, and repeat irradiation with displacing the visible light pulse laser such that a line-shaped irradiated region is overlapped with a region irradiated at a next timing in a width direction of the line-shaped irradiated region, to form a polycrystalline silicon film on the surface of the object. The step of polycrystallization applies ultraviolet light pulse laser onto a second irradiated region partially overlapping the first irradiated region while or before the visible light pulse laser is applied to the first irradiated region.
摘要翻译：薄膜半导体的制造方法包括多晶化，将可见光脉冲激光聚焦成被照射物体的表面上的线状，并且通过使可见光脉冲激光器移位，使得线状照射区域为与在线状照射区域的宽度方向的下一定时照射的区域重叠，以在物体的表面上形成多晶硅膜。在将可见光脉冲激光器施加到第一照射区域之前或之前，多晶化步骤将紫外光脉冲激光施加到与第一照射区域部分重叠的第二照射区域上。

38. 发明申请

US20060038800A1 Current supply circuit and display device having the current supply circuit 有权
标题翻译：电流供应电路和具有电流供应电路的显示装置
公开(公告)号：US20060038800A1
公开(公告)日：2006-02-23
申请号：US10529175
申请日：2004-05-20
申请人： Hidetada Tokioka , Masafumi Agari , Ryuichi Hashido , Masashi Okabe
发明人： Hidetada Tokioka , Masafumi Agari , Ryuichi Hashido , Masashi Okabe
IPC分类号： G09G5/00
CPC分类号： G09G3/3283 , G09G3/20 , G09G3/325 , G09G2310/0248 , G09G2310/027
摘要： A current supply circuit providing a data line with a current corresponding to a digital signal composed of data bits includes a current control circuit, a precharge switch and a precharge regulating circuit. The current control circuit responds to control signal reflecting respective data bits to control the amount of current along the data line (DL). The precharge switch precharges the data line to a predetermined voltage prior to current supply. The precharge regulating circuit exchanges with the data line electric charge corresponding to the control signals to move the voltage on the data line closer to a steady voltage corresponding to the data bits. In this way, an analog current corresponding to digital data can be promptly produced.
摘要翻译：向数据线提供与由数据位组成的数字信号相对应的电流的电流供给电路包括电流控制电路，预充电开关和预充电调节电路。电流控制电路响应反映各个数据位的控制信号来控制沿数据线（DL）的电流量。预充电开关在电流供应之前将数据线预充电到预定电压。预充电调节电路与对应于控制信号的数据线电荷交换，以将数据线上的电压移动到与数据位相对应的稳定电压。以这种方式，可以及时地产生对应于数字数据的模拟电流。

39. 发明授权

US06566683B1 Laser heat treatment method, laser heat treatment apparatus, and semiconductor device 有权
标题翻译：激光热处理方法
公开(公告)号：US06566683B1
公开(公告)日：2003-05-20
申请号：US09708608
申请日：2000-11-09
申请人： Tetsuya Ogawa , Hidetada Tokioka , Yukio Sato , Mitsuo Inoue , Tomohiro Sasagawa , Mitsutoshi Miyasaka
发明人： Tetsuya Ogawa , Hidetada Tokioka , Yukio Sato , Mitsuo Inoue , Tomohiro Sasagawa , Mitsutoshi Miyasaka
IPC分类号： H01L2904
CPC分类号： H01L27/1285 , B23K26/0732 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/268 , H01L27/1296
摘要： The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.
摘要翻译：通过将具有350nm至800nm波长的脉冲激光源产生的激光束形成为具有宽度和长度的直线光束来进行非晶或多晶硅膜材料的激光热处理，并且引导线性光束在形成在基板上的薄膜材料上。

40. 发明授权

US06437284B1 Optical system and apparatus for laser heat treatment and method for producing semiconductor devices by using the same 有权
标题翻译：用于激光热处理的光学系统和设备以及使用该半导体器件的半导体器件的制造方法
公开(公告)号：US06437284B1
公开(公告)日：2002-08-20
申请号：US09599645
申请日：2000-06-23
申请人： Tatsuki Okamoto , Tetsuya Ogawa , Keisuke Furuta , Hidetada Tokioka , Tomohiro Sasagawa , Junichi Nishimae , Mitsuo Inoue , Yukio Sato
发明人： Tatsuki Okamoto , Tetsuya Ogawa , Keisuke Furuta , Hidetada Tokioka , Tomohiro Sasagawa , Junichi Nishimae , Mitsuo Inoue , Yukio Sato
IPC分类号： B23K2606
CPC分类号： B23K26/0732 , B23K2101/40 , H01L21/02675 , H01L21/2026
摘要： An optical system that controls laser beam spot profile for forming a high performance thin film by a laser heat treatment process is provided. In the optical system that irradiates a rectangular laser beam on a film formed on a substrate, intensity distribution forming, apparatus makes the intensity distribution uniform in the longitudinal direction while maintaining the properties of the laser beam 2 such as directivity in the direction of shorter side, making it possible to concentrate the light to a limit permitted by the nature of the laser beam and achieve the maximum intensity gradient on the film disposed on the substrate. Thus a steep temperature distribution can be generated on the film disposed on the substrate and, as a result, high performance thin film can be formed.
摘要翻译：提供了通过激光热处理工艺控制用于形成高性能薄膜的激光束光斑轮廓的光学系统。在形成在基板上的膜上照射矩形激光束的光学系统中，强度分布形成装置使得强度分布沿长度方向均匀，同时保持激光束2的特性，例如沿短边方向的方向性，使得可以将光集中到由激光束的性质允许的极限，并且在设置在基板上的膜上实现最大强度梯度。因此，可以在设置在基板上的膜上产生陡峭的温度分布，结果，可以形成高性能的薄膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式