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    • 31. 发明授权
    • Noggin-derived peptide and use thereof
    • 来源于肽的肽及其用途
    • US08729028B2
    • 2014-05-20
    • US13145390
    • 2009-11-24
    • Young Ji ChungYoung Deug KimEun Mi KimSang Su SongIl HongKyoung Mi ChoSu Mi KimSang Min Han
    • Young Ji ChungYoung Deug KimEun Mi KimSang Su SongIl HongKyoung Mi ChoSu Mi KimSang Min Han
    • A61K38/03C07K4/00
    • C07K14/475A61K38/00C07K5/1019C07K2319/00
    • Disclosed are a noggin-derived peptide and a composition containing the same for promoting hair growth, improving skin conditions, providing anti-inflammatory function, or preventing or treating bone diseases. The disclosed noggin-derived peptide performs a function identical or similar to that of natural human noggin and is superior in stability and skin permeability as compared thereto. The composition containing the peptide of the present disclosure as an active ingredient exhibits remarkably superior effects in treating, preventing or improving growth factor-related symptoms, e.g. hair loss, skin conditions or cut, or treating, preventing or improving growth factor overexpression-related symptoms. Therefore, the superior activity and stability of the peptide of the present disclosure are greatly advantageous in application to medicine, quasi-drugs and cosmetics.
    • 公开了一种头蛋白衍生肽和含有其的组合物,其用于促进毛发生长,改善皮肤状况,提供抗炎功能,或预防或治疗骨骼疾病。 所公开的头蛋白衍生肽具有与天然人头蛋白相同或相似的功能,并且与其相比具有优异的稳定性和皮肤渗透性。 含有本公开的肽作为活性成分的组合物在治疗,预防或改善生长因子相关症状方面表现出显着的优异效果,例如, 脱发,皮肤状况或切割,或治疗,预防或改善生长因子过表达相关症状。 因此,本公开的肽的优异的活性和稳定性在应用于医药,准药物和化妆品方面是非常有利的。
    • 38. 发明授权
    • Method for fabricating recess gate in semiconductor device
    • 在半导体器件中制造凹槽的方法
    • US07838361B2
    • 2010-11-23
    • US12239492
    • 2008-09-26
    • Yong-Tae ChoEun-Mi Kim
    • Yong-Tae ChoEun-Mi Kim
    • H01L21/336
    • H01L21/28114H01L29/4236H01L29/42372H01L29/66621
    • A method for fabricating a recess gate in a semiconductor device includes etching a silicon substrate to form a trench that defines an active region, forming a device isolation layer that gap-fills the trench, forming a hard mask layer over the silicon substrate, the hard mask layer comprising a stack of an oxide layer and an amorphous carbon layer, wherein the hard mask layer exposes a channel target region of the active region, and forming a recess region with a dual profile by first etching and second etching the channel target region using the hard mask layer as an etch barrier, wherein the second etching is performed after removing the amorphous carbon layer.
    • 一种在半导体器件中制造凹陷栅的方法,包括蚀刻硅衬底以形成限定有源区的沟槽,形成间隙填充沟槽的器件隔离层,在硅衬底上形成硬掩模层,硬的 掩模层,其包括氧化物层和非晶碳层的堆叠,其中所述硬掩模层暴露所述有源区的沟道目标区域,并且通过第一蚀刻形成具有双轮廓的凹陷区域,并且使用 所述硬掩模层作为蚀刻阻挡层,其中所述第二蚀刻在去除所述无定形碳层之后进行。