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31. 发明申请

US20120095740A1 SIMULATION DEVICE, SIMULATION METHOD, AND RECORDING MEDIUM STORING SIMULATION PROGRAM 审中-公开
标题翻译：模拟设备，模拟方法和记录中间存储模拟程序
公开(公告)号：US20120095740A1
公开(公告)日：2012-04-19
申请号：US13337792
申请日：2011-12-27
申请人： Eiji KITAGAWA , Takuro Ikeda , Hiroshi Yamada
发明人： Eiji KITAGAWA , Takuro Ikeda , Hiroshi Yamada
IPC分类号： G06G7/48 , G06G7/70
CPC分类号： G06Q10/04 , G08G1/0112
摘要： A simulation device is accessible to a recording unit in which simulation data including status data and environmental data is recorded. The simulation device comprises: a plurality of status updaters to refer to the simulation data, and to execute a process of hierarchies into which a status updating process updating the status data is divided, the plurality of status updaters, in accordance with reference range information, referring to simulation data and updating the status data of the movable body for each of the hierarchies; and a drive decision unit to instruct the status updaters to update the status data according to update control information.
摘要翻译：记录单元可访问模拟装置，其中记录包括状态数据和环境数据的模拟数据。模拟装置包括：多个状态更新器，用于参考模拟数据，并且执行根据参考范围信息来对状态数据进行更新状态数据的状态更新处理被划分的层次过程，多个状态更新器，参考模拟数据和更新每个层级的可移动体的状态数据; 以及驱动决定单元，其根据更新控制信息指示状态更新者更新状态数据。

32. 发明申请

US20120068285A1 MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGNETORESISTIVE EFFECT ELEMENT 有权
标题翻译：磁阻效应元件，磁记忆和制造磁阻效应元件的方法
公开(公告)号：US20120068285A1
公开(公告)日：2012-03-22
申请号：US13234720
申请日：2011-09-16
申请人： Eiji KITAGAWA , Tadaomi Daibou , Yutaka Hashimoto , Masaru Tokou , Tadashi Kai , Makoto Nagamine , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Eiji KITAGAWA , Tadaomi Daibou , Yutaka Hashimoto , Masaru Tokou , Tadashi Kai , Makoto Nagamine , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： H01L29/82 , H01L21/20
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/133 , H01F10/3286 , H01F41/307 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.
摘要翻译：根据一个实施例，磁阻效应元件包括第一磁性层，其包括对膜表面的垂直各向异性和不变的磁化方向，第一磁性层具有包括从包括Tb，Gd和Dy的第一组中选择的元素的磁性膜以及从包括Co和Fe的第二组中选择的元素，对膜表面具有垂直磁各向异性的第二磁性层和可变磁化方向，以及在第一磁性层和第二磁性层之间的非磁性层。磁性膜包括非晶相和粒径为0.5nm以上的晶体。

33. 发明申请

US20120068284A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁电效应元件和磁记忆
公开(公告)号：US20120068284A1
公开(公告)日：2012-03-22
申请号：US13233420
申请日：2011-09-15
申请人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda
发明人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.
摘要翻译：根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

34. 发明申请

US20110313740A1 VEHICLE BEHAVIOR ESTIMATION DEVICE 有权
标题翻译：车辆行为估计装置
公开(公告)号：US20110313740A1
公开(公告)日：2011-12-22
申请号：US13158630
申请日：2011-06-13
申请人： Takuro IKEDA , Eiji Kitagawa
发明人： Takuro IKEDA , Eiji Kitagawa
IPC分类号： G06G7/70 , G06F17/10
CPC分类号： G05B17/02 , G08G1/01
摘要： A vehicle behavior estimation device includes: a storage unit configured to store a restriction condition at a point of a vehicle for which behavior is estimated; vehicle state data that includes position information and speed information of the vehicle; behavior parameters that include speed information and acceleration information of the vehicle; and physical restriction conditions that include an upper limit and a lower limit of the acceleration information; and a processor configured to obtain the vehicle state data by using the restriction condition at the point; calculate behavior parameters of a vehicle model that satisfy a physical restriction condition from the vehicle state data and the restriction condition at the point; update the vehicle state data of the vehicle model based on the behavior parameters; and repeat processing to calculate behavior parameters by using the updated vehicle state data and to update the vehicle state data.
摘要翻译：车辆行为估计装置包括：存储单元，被配置为在估计行为的车辆的某一点处存储限制条件; 车辆状态数据，其包括车辆的位置信息和速度信息; 包括车辆的速度信息和加速度信息的行为参数; 以及包括加速度信息的上限和下限的物理限制条件; 以及处理器，被配置为通过使用该点处的限制条件来获得车辆状态数据; 从车辆状态数据和该点的限制条件计算满足物理限制条件的车辆模型的行为参数; 基于行为参数来更新车辆模型的车辆状态数据; 并且通过使用更新的车辆状态数据来重复处理以计算行为参数并更新车辆状态数据。

35. 发明申请

US20110222335A1 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME 有权
标题翻译：磁性元件和磁阻随机存取存储器
公开(公告)号：US20110222335A1
公开(公告)日：2011-09-15
申请号：US13112260
申请日：2011-05-20
申请人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
摘要翻译：本发明提供一种自旋注入型的低电阻磁阻元件。形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面。通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

36. 发明申请

US20110073970A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20110073970A1
公开(公告)日：2011-03-31
申请号：US12879544
申请日：2010-09-10
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

37. 发明申请

US20100244163A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20100244163A1
公开(公告)日：2010-09-30
申请号：US12716582
申请日：2010-03-03
申请人： Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
发明人： Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L43/08 , H01L27/115
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.
摘要翻译：磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向上具有磁各向异性的自旋极化层和设置在该磁性层的一侧的磁性层非磁性层与设置有自旋极化层的一侧相反。稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

38. 发明授权

US07756897B2 Topic net generation method and apparatus 失效
标题翻译：主题网生成方法及装置
公开(公告)号：US07756897B2
公开(公告)日：2010-07-13
申请号：US11121001
申请日：2005-05-04
申请人： Ryosuke Miyata , Toshiyuki Fukuoka , Eiji Kitagawa
发明人： Ryosuke Miyata , Toshiyuki Fukuoka , Eiji Kitagawa
IPC分类号： G06F17/30
CPC分类号： G06F17/30598 , Y10S707/944 , Y10S707/961
摘要： A topic net management unit 1 reads one record from a table to generate the topic net (S1). Subsequently, from among the field data in the record, the unit 1 generates nodes corresponding to the field data for which a corresponding topic class exists (S2). Topics corresponding to those nodes are generated. If a node having the same topic is already generated, then the unit 1 does not newly generate a node having a duplicate topic (S2). The unit 1 mutually links the generated topics in accordance with the definitions between the topic classes (S3). Further, using a dialog information template, the unit 1 generates dialog information associated with the generated link (S4). The unit 1 performs Steps S1-S4 processing for all records in the table (S5). If there is a plurality of tables Steps S1-S5 processing is performed for all tables (S6).
摘要翻译：主题净管理单元1从表中读取一条记录以生成主题网（S1）。随后，从记录中的现场数据中，单元1生成与存在相应主题类的场数据相对应的节点（S2）。生成与这些节点对应的主题。如果已经生成了具有相同主题的节点，则单元1不新生成具有重复主题的节点（S2）。单元1根据主题类之间的定义相互链接生成的主题（S3）。此外，使用对话信息模板，单元1生成与生成的链接相关联的对话信息（S4）。单元1对表中的所有记录执行步骤S1-S4处理（S5）。如果存在多个表，则对所有表执行步骤S1-S5处理（S6）。

39. 发明授权

US07742924B2 System and method for updating information for various dialog modalities in a dialog scenario according to a semantic context 有权
标题翻译：根据语义上下文在对话方案中更新各种对话模式的信息的系统和方法
公开(公告)号：US07742924B2
公开(公告)日：2010-06-22
申请号：US10952807
申请日：2004-09-30
申请人： Ryosuke Miyata , Toshiyuki Fukuoka , Eiji Kitagawa
发明人： Ryosuke Miyata , Toshiyuki Fukuoka , Eiji Kitagawa
IPC分类号： G06F17/27 , G10L11/00 , G10L21/00
CPC分类号： G10L15/1822 , G06F17/2785
摘要： The present invention provides a dialog system, a dialog execution method and a computer program which are capable of easily updating input information and output information of a dialog scenario and easily changing a plurality of modalities by using a general-purpose dialog scenario. In a dialog system that receives information from outside, controls the pursuit of dialog along the stored dialog scenario and outputs information along the dialog scenario to the outside, a dialog scenario written by using information for identifying the meaning of words/phrases used in the input information and the output information is stored, one or a plurality of words/phrases are stored in association with information for identifying the meaning of words/phrases, input information is analyzed, a corresponding word/phrase is extracted based on the derived information for identifying the meaning of words/phrases, and output information along a dialog scenario stored, based on the extracted word/phrase is outputted.
摘要翻译：本发明提供一种对话系统，对话执行方法和计算机程序，其能够容易地更新输入信息并输出对话方案的信息，并且通过使用通用对话方案容易地改变多种模态。在从外部接收信息的对话系统中，控制沿着所存储的对话框场景的对话的追踪，并将对话方案中的信息输出到外部，通过使用用于识别输入中使用的单词/短语的含义的信息而写入的对话方案存储信息和输出信息，与用于识别单词/短语的含义的信息相关联地存储一个或多个单词/短语，分析输入信息，基于导出的用于识别的信息提取相应的单词/短语输出基于所提取的字/短语存储的对话方案中的单词/短语的含义和输出信息。

40. 发明申请

US20090251951A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 审中-公开
标题翻译：磁性元件和磁性随机存取存储器
公开(公告)号：US20090251951A1
公开(公告)日：2009-10-08
申请号：US12409654
申请日：2009-03-24
申请人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00 , H01L29/82 , G11C11/416 , G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/307 , H01L43/08
摘要： A magnetoresistive element includes a foundation layer, a first magnetic layer on the foundation layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer is made of a ferromagnetic metal containing one or more elements selected from a first group consisting of Co, Fe, and Ni, and one or more elements selected from a second group consisting of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir, and Os. The foundation layer is made of a metal containing one or more elements selected from a third group consisting of Al, Ni, Co, Fe, Mn, Cr, and V.
摘要翻译：磁阻元件包括基础层，基础层上的第一磁性层，第一磁性层上的隧道势垒层，以及隧道势垒层上的第二磁性层。第一磁性层由含有选自Co，Fe和Ni的第一组中的一种或多种元素的铁磁性金属和选自由Cu，Ag，Au，Pd，Pt组成的第二组中的一种或多种元素，Ru，Rh，Ir和Os。基底层由含有选自由Al，Ni，Co，Fe，Mn，Cr和V组成的第三组中的一种或多种元素的金属制成。

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