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    • 31. 发明申请
    • TESTING AND REPAIRING APPARATUS OF THROUGH SILICON VIA IN STACKED-CHIP
    • 通过硅胶检测和修复硅胶的装置
    • US20130093454A1
    • 2013-04-18
    • US13326331
    • 2011-12-15
    • Hsin-Chi LaiChih-Sheng LinPi-Feng ChiuZhe-Hui Lin
    • Hsin-Chi LaiChih-Sheng LinPi-Feng ChiuZhe-Hui Lin
    • G01R31/26
    • G01R31/318513G01R31/2812G01R31/31717H01L22/22
    • A testing and repairing apparatus of through silicon via (TSV) disposed between a first and a second chips is provided. First terminals of a first and a second switches are coupled to a first terminal of the TSV. First terminals of a third and a fourth switches are coupled to a second terminal of the TSV. A first terminal of a first resister is coupled to a first voltage. A first selector is coupled between second terminals of the second switch and the first resister. A second selector is coupled between a second terminal of the fourth switch and a second voltage. A first control circuit detects the second terminal of the second switch, and controls the first switch, the second switch and the first selector. A second control circuit controls the third switch, the fourth switch and the second selector.
    • 提供了设置在第一和第二芯片之间的通过硅通孔(TSV)的测试和修复设备。 第一和第二开关的第一端子耦合到TSV的第一端子。 第三和第四开关的第一端子耦合到TSV的第二端子。 第一电阻器的第一端子耦合到第一电压。 第一选择器耦合在第二开关的第二端子和第一电阻器之间。 第二选择器耦合在第四开关的第二端和第二电压之间。 第一控制电路检测第二开关的第二端子,并控制第一开关,第二开关和第一选择器。 第二控制电路控制第三开关,第四开关和第二选择器。
    • 32. 发明申请
    • MICROALGAE CULTIVATION MODULE
    • 微藻培养模块
    • US20130059369A1
    • 2013-03-07
    • US13351238
    • 2012-01-17
    • Chih-Sheng LinSheng-Yi ChiuChien-Ya Kao
    • Chih-Sheng LinSheng-Yi ChiuChien-Ya Kao
    • C12M1/42
    • C12M23/58C12M21/02C12M29/26C12M41/34C12M43/04
    • A microalgae cultivation module for carbon reduction and biomass production is provided, which includes a first photobioreactor set, a second photobioreactor set, a gas switching device and a control unit. The gas switching device is communicated to the first and the second photobioreactor sets. The control unit is coupled to and controls the gas switching device, thereby aerating a waste gas into the first photobioreactor set and aerating air into the second photobioreactor set for a first predetermined time, then aerating the waste gas into the second photobioreactor set and aerating the air into the first photobioreactor set for a second predetermined time. The first and the second photobioreactor sets include a microalgae species.
    • 提供了一种用于碳减少和生物质生产的微藻培养模块,其包括第一光生物反应器组,第二光生物反应器组,气体切换装置和控制单元。 气体切换装置与第一和第二光生物反应器组连通。 控制单元联接到并控制气体切换装置,从而将废气充气到第一光生物反应器组中,并将空气通入第二光生物反应器组中第一预定时间,然后将废气充气到第二光生物反应器组中, 进入第一光生物反应器的空气设定第二预定时间。 第一和第二光生物反应器组包括微藻种类。
    • 34. 发明申请
    • METHOD OF MAKING A ROUGH SUBSTRATE
    • 制作粗糙基板的方法
    • US20100178616A1
    • 2010-07-15
    • US12651846
    • 2010-01-04
    • Chih-Sheng LinChe-Hsiung Wu
    • Chih-Sheng LinChe-Hsiung Wu
    • G03F7/20
    • H01L33/22C30B33/00
    • A method of making a rough substrate includes: (a) forming a first oxide layer; (b) coating a photoresist layer; (c) exposing and developing the photoresist layer; (d) etching parts of the first oxide layer such that parts of the first oxide layer are formed into a plurality of sacrificial protrusions; (e) removing the photoresist regions; (f) depositing on the substrate layer and the sacrificial protrusions a second oxide layer; (g) etching the second oxide layer so as to leave portions of the second oxide layer; and (h) etching additionally the sacrificial protrusions, the substrate layer, and the portions of the second oxide layer, thereby producing a plurality of flat recess bottom faces, and substrate protrusions.
    • 制作粗糙基板的方法包括:(a)形成第一氧化物层; (b)涂覆光致抗蚀剂层; (c)曝光和显影光刻胶层; (d)蚀刻第一氧化物层的部分,使得第一氧化物层的部分形成多个牺牲突起; (e)去除光致抗蚀剂区域; (f)在所述基底层和所述牺牲突起上沉积第二氧化物层; (g)蚀刻第二氧化物层以留下第二氧化物层的部分; 以及(h)另外蚀刻所述牺牲突起,所述基底层和所述第二氧化物层的所述部分,由此产生多个平坦凹陷底面和基底突起。
    • 35. 发明授权
    • Memory accessing circuit and method
    • 存储器访问电路和方法
    • US07738289B2
    • 2010-06-15
    • US12155787
    • 2008-06-10
    • Min Chuan WangChih Sheng LinKeng Li SuWei Chun Chang
    • Min Chuan WangChih Sheng LinKeng Li SuWei Chun Chang
    • G11C11/00
    • G11C11/5607G11C11/16G11C29/08G11C2211/5634
    • The present invention relates to a memory accessing circuit, which is for accessing a memory circuit with 2N impedance states. The memory accessing circuit includes a testing signal generating circuit, for generating a testing signal by detecting the impedance state of the memory circuit; a reference signal generating circuit, for generating 2N−1 reference signals by detecting the impedance states of a reference circuit having 2N−1 impedance paths; a median signal generating circuit, for generating (2N−1)−1, median signals by receiving the 2N−1 reference signals; and a comparing circuit, for comparing the testing signal and the (2N−1) median signals. The present invention further provides a memory accessing method thereof.
    • 本发明涉及一种用于访问具有2N个阻抗状态的存储器电路的存储器存取电路。 存储器访问电路包括测试信号发生电路,用于通过检测存储器电路的阻抗状态来产生测试信号; 参考信号发生电路,用于通过检测具有2N-1个阻抗路径的参考电路的阻抗状态来产生2N-1个参考信号; 中间信号发生电路,用于通过接收2N-1个参考信号来产生(2N-1)-1个中间信号; 以及用于比较测试信号和(2N-1)个中值信号的比较电路。 本发明还提供一种其存储器访问方法。
    • 37. 发明授权
    • Multi-state sense amplifier
    • 多状态读出放大器
    • US07486546B2
    • 2009-02-03
    • US11806636
    • 2007-06-01
    • Min-Chuan WangChih-Sheng LinChia-Pao ChangKeng-Li Su
    • Min-Chuan WangChih-Sheng LinChia-Pao ChangKeng-Li Su
    • G11C11/00
    • G11C7/062G11C7/06G11C11/1673G11C11/5607G11C2207/063G11C2211/5634G11C2211/5645
    • The invention provides a multi-state sense amplifier, coupled to at least one memory cell with changeable resistance and a plurality of reference cells. The first current mirror circuit, coupled to the output terminal of the memory cell, generates a second memory cell current at a first node according to a first memory cell current through the memory cell. The second current mirror circuit, coupled to the output terminal of the reference cells, generates a plurality of second reference currents at a plurality of second nodes according to a plurality of first reference currents through the reference cells. The load circuit, coupled to the first node, the second nodes, and a ground, provides equal loads for the second memory cell current and the second reference currents to respectively generate a memory cell voltage at the first node and a plurality of reference voltages at the second nodes.
    • 本发明提供一种多状态读出放大器,耦合到具有可变电阻的至少一个存储单元和多个参考单元。 耦合到存储器单元的输出端的第一电流镜电路根据通过存储单元的第一存储单元电流在第一节点产生第二存储单元电流。 耦合到参考单元的输出端的第二电流镜电路根据通过参考单元的多个第一参考电流在多个第二节点处产生多个第二参考电流。 耦合到第一节点,第二节点和地的负载电路为第二存储器单元电流和第二参考电流提供相等的负载,以分别在第一节点处产生存储单元电压和多个参考电压 第二个节点。
    • 38. 发明申请
    • Multi-state sense amplifier
    • 多状态读出放大器
    • US20080007992A1
    • 2008-01-10
    • US11806636
    • 2007-06-01
    • Min-Chuan WangChih-Sheng LinChia-Pao ChangKeng-Li Su
    • Min-Chuan WangChih-Sheng LinChia-Pao ChangKeng-Li Su
    • G11C11/02G11C7/06
    • G11C7/062G11C7/06G11C11/1673G11C11/5607G11C2207/063G11C2211/5634G11C2211/5645
    • The invention provides a multi-state sense amplifier, coupled to at least one memory cell with changeable resistance and a plurality of reference cells. The first current mirror circuit, coupled to the output terminal of the memory cell, generates a second memory cell current at a first node according to a first memory cell current through the memory cell. The second current mirror circuit, coupled to the output terminal of the reference cells, generates a plurality of second reference currents at a plurality of second nodes according to a plurality of first reference currents through the reference cells. The load circuit, coupled to the first node, the second nodes, and a ground, provides equal loads for the second memory cell current and the second reference currents to respectively generate a memory cell voltage at the first node and a plurality of reference voltages at the second nodes.
    • 本发明提供一种多状态读出放大器,耦合到具有可变电阻的至少一个存储单元和多个参考单元。 耦合到存储器单元的输出端的第一电流镜电路根据通过存储单元的第一存储单元电流在第一节点产生第二存储单元电流。 耦合到参考单元的输出端的第二电流镜电路根据通过参考单元的多个第一参考电流在多个第二节点处产生多个第二参考电流。 耦合到第一节点,第二节点和接地的负载电路为第二存储器单元电流和第二参考电流提供相等的负载,以分别在第一节点处产生存储器单元电压和多个参考电压 第二个节点。