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31. 发明授权

US07947581B2 Formation of graphene wafers on silicon substrates 有权
标题翻译：在硅衬底上形成石墨烯晶片
公开(公告)号：US07947581B2
公开(公告)日：2011-05-24
申请号：US12538214
申请日：2009-08-10
申请人： Ce Ma
发明人： Ce Ma
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00
CPC分类号： H01L21/02381 , H01L21/02527 , H01L21/02612 , H01L29/1606 , Y10S977/734 , Y10S977/755 , Y10S977/844 , Y10S977/847
摘要： Processes for forming full graphene wafers on silicon or silicon-on-insulator substrates. The processes comprise formation of a metal carbide layer on the substrate and annealing of the metal carbide layer under high vacuum. For volatile metals, this annealing step results in volatilization of the metal species of the metal carbide layer and reformation of the carbon atoms into the desired graphene wafer. Alternatively, for non-volatile metals, the annealing step results in migration of the metal in the metal carbide layer to the top surface of the layer, thereby forming a metal rich top layer. The desired graphene layer is formed by the carbon atoms left at the interface with the metal rich top layer. The thickness of the graphene layer is controlled by the thickness of the metal carbide layer and by solid phase reactions.
摘要翻译：在硅或绝缘体上硅衬底上形成完整的石墨烯晶片的工艺。该方法包括在基底上形成金属碳化物层，并在高真空下退火金属碳化物层。对于挥发性金属，该退火步骤导致金属碳化物层的金属物质的挥发和将碳原子重新形成所需的石墨烯晶片。或者，对于非挥发性金属，退火步骤导致金属碳化物层中的金属向层的顶表面迁移，从而形成富金属顶层。所需的石墨烯层由与富金属顶层界面处留下的碳原子形成。石墨烯层的厚度由金属碳化物层的厚度和固相反应控制。

32. 发明申请

US20110048283A1 LOW-VOLATILITY COMPOUNDS FOR USE IN FORMING DEPOSITED LAYERS 审中-公开
标题翻译：用于形成沉积层的低挥发性化合物
公开(公告)号：US20110048283A1
公开(公告)日：2011-03-03
申请号：US12671594
申请日：2008-07-15
申请人： Kenneth Aitchison , Atul Athalye , Ce Ma
发明人： Kenneth Aitchison , Atul Athalye , Ce Ma
IPC分类号： C09D1/00
CPC分类号： C23C16/45553
摘要： The present invention relates to the use of low-volatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of low vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.
摘要翻译：本发明涉及低挥发性化合物在形成沉积层中的用途以及实现这种沉积的方法。特别适用于半导体器件沉积层的领域。描述了由低蒸气压溶质（原料）和溶剂组成的溶液，其中溶剂的蒸气压比溶质低几个数量级。将溶液引入蒸发装置，该蒸发装置被配置为能够以最小的溶剂蒸发和溶质的最小分解来快速且有效地蒸发溶质。

33. 发明申请

US20100055321A1 PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积的前驱体
公开(公告)号：US20100055321A1
公开(公告)日：2010-03-04
申请号：US12374414
申请日：2007-07-12
申请人： Ce Ma , Qing Min Wang
发明人： Ce Ma , Qing Min Wang
IPC分类号： C23C16/448 , C09D1/00
CPC分类号： C23C16/405 , C07F9/005 , C23C16/45525 , C23C16/45553
摘要： Stable ALD precursors that have at least one metal-nitrogen bond and a mixed ligand are presented. These ALD precursors exhibit self-limiting growth, at reduced deposition temperature and produce less contamination all with enhanced stability.
摘要翻译：提出了具有至少一个金属 - 氮键和混合配体的稳定的ALD前体。这些ALD前体在降低的沉积温度下表现出自限制的生长，并且以增强的稳定性产生更少的污染物。

34. 发明申请

US20070077778A1 Method of forming low dielectric constant layer 审中-公开
标题翻译：低介电常数层的形成方法
公开(公告)号：US20070077778A1
公开(公告)日：2007-04-05
申请号：US11243157
申请日：2005-10-04
申请人： Ce Ma , Qing Wang , Patrick Helly , Graham McFarlane
发明人： Ce Ma , Qing Wang , Patrick Helly , Graham McFarlane
IPC分类号： H01L21/31
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274
摘要： Dielectric layers having a low dielectric constant are fabricated by using an asymmetric organocyclosiloxane as a precursor gas. The carbon content of the deposited layer is reduced to less than about 50 percent by use an oxidizing agent, a silicon containing compound, or a combination thereof.
摘要翻译：通过使用不对称的有机环硅氧烷作为前体气体来制造介电常数低的介电层。通过使用氧化剂，含硅化合物或其组合将沉积层的碳含量降低至小于约50％。

35. 发明申请

US20060071213A1 Low temperature selective epitaxial growth of silicon germanium layers 审中-公开
标题翻译：硅锗层的低温选择性外延生长
公开(公告)号：US20060071213A1
公开(公告)日：2006-04-06
申请号：US10957791
申请日：2004-10-04
申请人： Ce Ma , Qing Wang
发明人： Ce Ma , Qing Wang
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： The present invention relates generally to a method and means for growing strained or relaxed or graded silicon germanium (SiGe) layers on a semiconductor substrate using a selective epitaxial growth process. In particular, the present invention provides a method for epitaxially growing SiGe layers at temperatures lower than 600° C. by using halogermane and silane precursor materials.
摘要翻译：本发明一般涉及一种使用选择性外延生长工艺在半导体衬底上生长应变或弛豫或渐变硅锗（SiGe）层的方法和装置。特别地，本发明提供了一种通过使用卤素和硅烷前体材料在低于600℃的温度下外延生长SiGe层的方法。

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