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31. 发明专利

JP2015043083A 可変倍率を有するウィン−ダイソン光学システム有权
标题翻译：具有可变放大的WYNNE-DYSON光学系统
公开(公告)号：JP2015043083A
公开(公告)日：2015-03-05
申请号：JP2014164915
申请日：2014-08-13
申请人：ウルトラテックインク , Ultratech Inc , ウルトラテックインク
发明人： DAVID G STITES
IPC分类号： G02B13/26 , G02B17/08 , G03F7/20 , H01L21/027
CPC分类号： G02B15/14
摘要：【課題】可変倍率を有するマイクロリソグラフィー用の1?倍率ウィン−ダイソン光学システムを提供する。【解決手段】第1及び第2のプリズムPA、PBと、正レンズ群12とを備える。正レンズ群12は、第1及び第2の分割レンズ要素20A、20Bを有する分割レンズ20を含む。第1及び第2の分割レンズ要素20A、20Bは、第1及び第2のプリズムPA、PBにそれぞれ隣接している。第1及び第2の分割レンズ要素20A、20Bは、軸方向に可動であり、1?ウィン−ダイソン光学システム10の倍率を、約500部/ミリオンまで変化させる。1?ウィン−ダイソン光学システム用の調整可能な正レンズ群も開示され、正レンズ群は、光学システム倍率の軽微な変化を許容する。【選択図】図1
摘要翻译：要解决的问题：提供具有可变放大倍数的用于微光刻的1×Wynne-Dyson光学系统。解决方案：1×Wynne-Dyson光学系统10具有第一和第二棱镜PA，PB和正透镜组12，其包括分离透镜20具有分别与第一和第二棱镜PA，PB相邻的第一和第二分割透镜元件20A，20B。第一和第二分割透镜元件20A，20B可轴向移动，以使1×Wynne-Dyson光学系统10的放大倍数高达约百万分之500。还公开了用于1×Wynne-Dyson光学系统的可调整的正透镜组，其中正透镜组允许光学系统放大率的小的变化。

32. 发明专利

JP2014013890A Laser annealing systems and methods with ultra-short dwell times 有权
标题翻译：激光退火系统和超短时间的方法
公开(公告)号：JP2014013890A
公开(公告)日：2014-01-23
申请号：JP2013118693
申请日：2013-06-05
申请人： Ultratech Inc , ウルトラテックインク
发明人： SERGUEI ANIKITCHEV , HAWRYLUK M ANDREW
IPC分类号： H01L21/265 , H01L21/268
CPC分类号： H01L21/324 , B23K26/0006 , B23K26/0081 , B23K26/032 , B23K26/0608 , B23K26/0648 , B23K26/0736 , B23K26/082 , B23K2201/40 , B23K2203/56 , H01L21/02675 , H01L21/02691 , H01L21/268 , H01L21/67115 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times.SOLUTION: A laser annealing system can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process.
摘要翻译：要解决的问题：提供具有超短停留时间的半导体晶片退火的激光退火系统和方法。解决方案：激光退火系统可以包括至少部分重叠的一个或两个激光束。其中一个激光束是预热激光束，另一个激光束是退火激光束。退火激光束扫描足够快，使得停留时间在约1μs至约100μs的范围内。这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。

33. 发明专利

JP2013157600A Two-beam laser annealing with improved temperature performance 有权
标题翻译：具有改善温度性能的双光束激光退火
公开(公告)号：JP2013157600A
公开(公告)日：2013-08-15
申请号：JP2012287204
申请日：2012-12-28
申请人： Ultratech Inc , ウルトラテックインク
发明人： SHEN XIAOHUA , WANG YUN , WANG XIAORU
IPC分类号： H01L21/268 , H01L21/265
CPC分类号： H01L21/2636 , B23K26/0608 , B23K26/0732 , B23K26/08 , B23K2201/40 , G01N21/55 , H01L21/268 , H01L21/324 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide systems and methods for performing laser annealing in a manner that reduces wafer surface temperature variations during the laser annealing process.SOLUTION: The systems and methods include annealing the wafer surface with first and second laser beams as preheat and anneal laser beams having first and second intensity, respectively. The preheat laser beam brings the wafer surface temperate close to the annealing temperature, and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are used to achieve good uniformity of anneal temperature.
摘要翻译：要解决的问题：提供用于在激光退火过程中降低晶片表面温度变化的方式进行激光退火的系统和方法。解决方案：系统和方法包括用第一和第二激光束退火晶片表面作为预热和退火分别具有第一和第二强度的激光束。预热激光束使晶片表面温度接近退火温度，退火激光束使晶片表面温度达到退火温度。在预热和退火波长处的晶片表面的反射率图用于实现退火温度的均匀性。

34. 发明专利

JP2013120935A Method of characterizing semiconductor light-emitting device on the basis of features of product wafer 有权
标题翻译：基于产品特征的半导体发光器件表征方法
公开(公告)号：JP2013120935A
公开(公告)日：2013-06-17
申请号：JP2012249254
申请日：2012-11-13
申请人： Ultratech Inc , ウルトラテックインク
发明人： HAWRYLUK M ANDREW , DAVID OWEN
IPC分类号： H01L21/66 , H01L33/00
CPC分类号： G01R31/2635
摘要： PROBLEM TO BE SOLVED: To provide a method of characterizing a semiconductor light-emitting device (LED) on the basis of the characteristics of a product wafer.SOLUTION: The method of characterizing a semiconductor light-emitting device includes a step for measuring at least one characteristic, such as the curvature or the device layer stress, of a product wafer. The relationship of at least one characteristic and the emission wavelength of an LED die formed of a product wafer is established. According to the relationship, emission wavelength from an LED structure formed on the device layer of a product wafer formed similarly is predicted. This method may also be used for characterizing a product wafer, more specifically an LED structure formed on the product wafer, and may be used for process control when manufacturing a large capacity LED.
摘要翻译：要解决的问题：提供基于产品晶片的特性来表征半导体发光器件（LED）的方法。解决方案：表征半导体发光器件的方法包括用于测量产品晶片的至少一个特性（例如曲率或器件层应力）的步骤。建立由产品晶片形成的LED管芯的至少一个特性与发射波长的关系。根据该关系，预测了形成在类似地形成的产品晶片的器件层上的LED结构的发射波长。该方法还可以用于表征产品晶片，更具体地说是形成在产品晶片上的LED结构，并且可以在制造大容量LED时用于过程控制。版权所有（C）2013，JPO＆INPIT

35. 发明专利

JP2013048236A FAST THERMAL ANNEALING FOR GaN LEDS 审中-公开
标题翻译： GaN LED的快速热退火
公开(公告)号：JP2013048236A
公开(公告)日：2013-03-07
申请号：JP2012179993
申请日：2012-08-15
申请人： Ultratech Inc , ウルトラテックインク
发明人： WANG YUN , HAWRYLUK M ANDREW
IPC分类号： H01L33/36 , H01L21/265 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN light-emitting diode which realizes enhanced output power, lower turn-on voltage and reduced series resistance.SOLUTION: A method includes forming a GaN multilayer structure 30 having an n-GaN layer 40 and a p-GaN layer 50 between which an active layer 60 is sandwiched. The method also includes performing fast thermal annealing, having time duration of 10 seconds or shorter, of the p-GaN layer 50 using either a laser or a flash lamp. The method further includes forming a transparent conducting layer 70 on the GaN multilayer structure 30, and adding a p-contact 90p to the transparent conducting layer 70 and an n-contact 90n to the n-GaN layer 40.
摘要翻译：解决的问题：提供一种实现增强输出功率，降低接通电压和降低串联电阻的GaN发光二极管的制造方法。解决方案：一种方法包括形成具有n-GaN层40和p-GaN层50的GaN多层结构30，其间夹有有源层60。该方法还包括使用激光或闪光灯执行p-GaN层50的持续时间为10秒或更短的快速热退火。该方法还包括在GaN多层结构30上形成透明导电层70，并将p型接触90p加到n-GaN层40上的透明导电层70和n型接触90n上。 C）2013，JPO＆INPIT

36. 发明专利

JP2012231158A Laser thermal annealing of lightly doped silicon substrates 审中-公开
标题翻译：轻质硅基材的激光热退火
公开(公告)号：JP2012231158A
公开(公告)日：2012-11-22
申请号：JP2012143310
申请日：2012-06-26
申请人： Ultratech Inc , ウルトラテックインク
发明人： SOMIT TALWAR , THOMPSON MICHAEL O , BORIS GREK , DAVID A MARKLE
IPC分类号： H01L21/268 , B23K26/06 , B23K26/42 , H01L21/20
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/60 , H01L21/2026 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is substantially not absorbed in the substrate at room temperature.SOLUTION: The method takes advantage of the fact that absorption of long wavelength radiation 20 (1 μm or greater) in undoped silicon substrates 10 etc. strongly depends on temperature. The method includes heating the substrate to a critical temperature where long-wavelength annealing radiation is substantially absorbed, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.
摘要翻译：要解决的问题：提供一种使用在室温下基本上不被吸收在基板中的退火辐射束来进行基板的激光热退火（LTA）的装置和方法。解决方案：该方法利用了未掺杂的硅衬底10等中长波长辐射20（1μm或更大）的吸收强烈地取决于温度的事实。该方法包括将衬底加热至基本吸收长波长退火辐射的临界温度，然后用退火辐射照射衬底以产生能够对衬底退火的温度。版权所有（C）2013，JPO＆INPIT

37. 发明专利

JP2012129500A System and method for forming time averaged line image 有权
标题翻译：用于形成时间平均线图像的系统和方法
公开(公告)号：JP2012129500A
公开(公告)日：2012-07-05
申请号：JP2011226264
申请日：2011-10-13
申请人： Ultratech Inc , ウルトラテックインク
发明人： SERGUEI ANIKITCHEV , JAMES T MCWHIRTER , JOSEPH E GORTYCH
IPC分类号： H01L21/268 , H01L21/265
CPC分类号： H01L21/268 , B23K26/006 , B23K26/0066 , B23K26/0738
摘要： PROBLEM TO BE SOLVED: To provide a system and method for forming a time averaged line image having a relatively high uniformity in intensity of laer light in the length direction.SOLUTION: A line image 36 having nonuniformity in intensity of first quantity in a major axis direction is formed on an image plane, and a secondary image 66 which at least partially overlaps with the line image 36 is formed. The method includes scanning the secondary image 66 at least at a part of the line image in the major axis direction according to a scanning profile to form a time averaged correction line image 36' having the intensity nonuniformity of second quantity in the major axis direction which is less than the first quantity. When performing laser annealing on a semiconductor wafer 40, the line image overlap amount of a scanning route part which adjoins a wafer scanning route is substantially reduced for increased wafer throughput.
摘要翻译：要解决的问题：提供一种用于形成在长度方向上具有较高亮度的均匀度的时间平均线图像的系统和方法。解决方案：在图像平面上形成在长轴方向上具有第一量的强度不均匀的线图像36，并且形成与线图像36至少部分重叠的次级图像66。该方法包括根据扫描轮廓至少在长轴方向上的一部分行图像上扫描二次图像66，以形成具有长轴方向上的第二数量的强度不均匀性的时间平均校正线图像36' 小于第一数量。当在半导体晶片40上进行激光退火时，与晶片扫描路径相邻的扫描路径部分的行图像重叠量大大降低以增加晶片生产量。版权所有（C）2012，JPO＆INPIT

38. 发明专利

JP2012009824A Line imaging system and laser annealing method 有权
标题翻译：线成像系统和激光退火方法
公开(公告)号：JP2012009824A
公开(公告)日：2012-01-12
申请号：JP2011094008
申请日：2011-04-20
申请人： Ultratech Inc , ウルトラテックインク
发明人： SERGUEI ANIKITCHEV
IPC分类号： H01L21/268 , H01L21/265 , H01S3/00
CPC分类号： B23K26/0643 , B23K26/066 , B23K26/0738 , B23K26/0853 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To pass more light than a conventional line imaging system by cutting beyond a knife-edge aperture 50.SOLUTION: A line imaging system includes a laser 20, first and second cylindrical optical systems CL1, CL2 that include a first spatial filter SF1 therebetween, the knife-edge aperture 50, a cylindrical relay system, and a cylindrical condenser lens CFL. The first spatial filter SF1 is configured to cut a line focus LF1 in a center lobe, and generates a first light beam. The second cylindrical lens system CL2 is arranged in a remote field, and configured to perform spatial filter processing for passing a center intensity lobe of the first light beam and cutting an intensity lobe outside a range. A light beam having been subjected to the filter processing eventually twice has a relatively tip-flat intensity distribution with respect to a length of a line image LI.
摘要翻译：要解决的问题：通过切割刀刃孔50以外，比传统的线成像系统传递更多的光。解决方案：线成像系统包括激光器20，第一和第二圆柱形光学系统CL1， CL2，其间包括第一空间滤波器SF1，刀刃孔50，圆柱形中继系统和圆柱形聚光透镜CFL。第一空间滤波器SF1被配置为在中心波瓣处切割线对焦LF1，并且产生第一光束。第二柱面透镜系统CL2布置在远程场中，并被配置为执行用于使第一光束的中心强度波瓣通过并将强度波瓣切除在范围之外的空间滤波处理。已经经过过滤处理的光束最终两次相对于线图像L1的长度具有相对尖端平坦的强度分布。版权所有（C）2012，JPO＆INPIT

39. 发明专利

JP2010263218A Led-based uv illuminator, and lithography system using same 审中-公开
标题翻译：基于LED的紫外线照明器，以及使用它的光刻系统
公开(公告)号：JP2010263218A
公开(公告)日：2010-11-18
申请号：JP2010105420
申请日：2010-04-30
申请人： Ultratech Inc , ウルトラテックインク
发明人： HAWRYLUK ANDREW M
IPC分类号： H01L21/027
CPC分类号： G03F7/7005 , G03F7/70075
摘要： PROBLEM TO BE SOLVED: To give a high irradiating output to an LED-type UV irradiating device by efficiently using UV light-emitting diodes efficiently to collect the output light.
SOLUTION: The LED-type UV-irradiating device has a plurality of LED light sources for emitting UV light and having a plurality of dichroic mirrors. The dichroic mirrors are disposed opposite to the LED light sources, and the UV light is directed along the common optical axis. Homogenizers of light pipes are disposed along the common optical axis, and homogenize the UV light. The UV irradiating device has light-collecting efficiency of 50% or more, and has an irradiating output of 850 mW/mm
2 or more. A lithographic system using the LED-type UV-irradiating device is also disclosed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过有效地使用UV发光二极管有效地收集输出光，向LED型UV照射装置提供高照射输出。解决方案：LED型紫外线照射装置具有用于发射UV光并具有多个分色镜的多个LED光源。分色镜与LED光源相对设置，并且UV光沿着公共光轴被引导。光管的均质器沿共同的光轴设置，使紫外光均匀化。紫外线照射装置具有50％以上的聚光效率，并且具有850mW / mm 2以上的照射输出。还公开了使用LED型紫外线照射装置的光刻系统。版权所有（C）2011，JPO＆INPIT

40. 发明公开

KR20180065949A 재구성된 웨이퍼의 리소그래피 처리에서 포커스 제어를 위한 스캐닝 방법 审中-公开
公开(公告)号：KR20180065949A
公开(公告)日：2018-06-18
申请号：KR20170167602
申请日：2017-12-07
申请人： ULTRATECH INC
发明人： BISCHOFF PAUL M , TRUE EMILY M , ELLIS RAYMOND , CRESPIN A J
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： H01L22/20 , G03F1/36 , G03F7/20 , G03F9/7034 , G03F9/7046 , H01L21/0274 , H01L21/67259 , H01L21/681 , H01L22/12 , H01L23/00 , H01L24/02 , H01L24/05 , H01L24/13 , H01L24/96 , H01L2224/0231 , H01L2224/0401 , H01L2224/12105 , H01L2224/13024 , H01L2224/13025
摘要： IC 칩들을지지하는재구성된웨이퍼를처리하는방법은, 초점심도및 초점평면을갖고재구성된웨이퍼상에노광필드들을형성하는리소그래피툴 내에재구성된웨이퍼를조작가능하게배치하는단계를포함하며, 각각의노광필드는 IC 칩들중 하나이상을포함한다. 본발명의방법은또한 IC 칩들에의해형성된재구성된웨이퍼의표면토포그래피를측정하기위해라인스캐너로재구성된웨이퍼를스캐닝하는단계를포함한다. 본발명의방법은또한, 주어진노광필드에대해: i) 상기주어진노광필드내의 IC 칩들의포토레지스트층들이초점심도내에있도록재구성된웨이퍼의위치및 배향중 적어도하나를조정하는단계; 및 ii) 주어진노광필드내의 IC 칩들의포토레지스트층들을패터닝하기위해리소그래피툴로노광을수행하는단계;를포함한다.

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