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31. 发明授权

US07678605B2 Method for chemical mechanical planarization of chalcogenide materials 失效
标题翻译：硫族化物材料的化学机械平面化方法
公开(公告)号：US07678605B2
公开(公告)日：2010-03-16
申请号：US12190882
申请日：2008-08-13
申请人： James Allen Schlueter , Bentley J. Palmer
发明人： James Allen Schlueter , Bentley J. Palmer
IPC分类号： H01L21/00
CPC分类号： C09G1/02
摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.
摘要翻译：描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。组合物和方法在CMP处理期间在含硫属化物的衬底上提供低缺陷水平以及低的凹陷和局部侵蚀水平。

32. 发明授权

US07429338B2 Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization 失效
标题翻译：表面改性胶体研磨剂，包括用于化学机械平面化的稳定的双金属表面涂层硅溶胶
公开(公告)号：US07429338B2
公开(公告)日：2008-09-30
申请号：US11487443
申请日：2006-07-17
申请人： Junaid Ahmed Siddiqui
发明人： Junaid Ahmed Siddiqui
IPC分类号： B44C1/22
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stabilizer. The composition can further include a medium containing the abrasive and an oxidizing agent (e.g., hydrogen peroxide), wherein the at least one catalyst is adapted to catalyze oxidation of a substrate by the oxidizing agent. Preferably, the abrasive is alumina, titania, zirconia, germania, silica, ceria and/or mixtures thereof, the stabilizer is B, W and/or Al, and the catalyst is Cu, Fe, Mn, Ti, W and/or V. Both the stabilizer and the catalyst are immobilized on the abrasive surface. The method includes applying the composition to a substrate to be polished, such as substrates containing W, Cu and/or dielectrics.
摘要翻译：描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。该组合物包括用至少一种稳定剂和至少一种不同于至少一种稳定剂的催化剂改性的表面改性磨料。组合物还可以包括含有研磨剂和氧化剂（例如过氧化氢）的介质，其中所述至少一种催化剂适于催化由氧化剂氧化底物。优选地，研磨剂是氧化铝，二氧化钛，氧化锆，氧化锗，二氧化硅，二氧化铈和/或其混合物，稳定剂是B，W和/或Al，催化剂是Cu，Fe，Mn，Ti，W和/或V 稳定剂和催化剂都固定在磨料表面上。该方法包括将组合物施加到待抛光的基底，例如含有W，Cu和/或电介质的基底。

33. 发明授权

US07427305B2 Free radical-forming activator attached to solid and used to enhance CMP formulations 失效
标题翻译：自由基形成活化剂连接到固体上并用于增强CMP配方
公开(公告)号：US07427305B2
公开(公告)日：2008-09-23
申请号：US11405485
申请日：2006-04-18
申请人： Brandon Shane Scott , Robert J. Small
发明人： Brandon Shane Scott , Robert J. Small
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , B24B37/044 , C03C19/00 , C09G1/02 , C09K3/1436 , C09K3/1445 , C09K3/1463 , C23F3/00 , C23F3/04 , G11B5/3163 , G11B5/3169 , Y02P20/582
摘要： This invention relates to a method of making selected oxidizers or other free radical-producing compounds become more effective chemical etchants and/or oxidizers for CMP activities by promoting the formation of the free radicals in a CMP composition with one or more activators. The activator comprises iron, copper or combinations thereof. The activator coated abrasive is particularly effective as it brings the activator in close proximity to the targeted material on the substrate surface, and thus facilitates or accelerates the removal reaction substantially at the site of the targeted material. The activator reacts with the per-type oxidizer to form at least one oxygen-containing free radical. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced by this method.
摘要翻译：本发明涉及使用一种或多种活化剂促进在CMP组合物中形成自由基，使选择的氧化剂或其它产生自由基的化合物变成更有效的化学蚀刻剂和/或氧化剂用于CMP活性的方法。活化剂包括铁，铜或其组合。活化剂涂覆的磨料是特别有效的，因为其使活化剂紧邻基材表面上的目标材料，因此基本上在目标材料的位置促进或加速除去反应。活化剂与每种类型的氧化剂反应以形成至少一种含氧自由基。本发明进一步提供了一种在基底表面上抛光特征或层如金属膜的组合物的方法。本发明另外提供了通过该方法制造的基板。

34. 发明授权

US07344988B2 Alumina abrasive for chemical mechanical polishing 失效
标题翻译：用于化学机械抛光的氧化铝磨料
公开(公告)号：US07344988B2
公开(公告)日：2008-03-18
申请号：US10972616
申请日：2004-10-26
申请人： Philippe H. Chelle
发明人： Philippe H. Chelle
IPC分类号： H01L21/302
CPC分类号： C23F3/00 , B24B37/044 , C09G1/02 , C09K3/1463
摘要： Methods of manufacturing alumina abrasive for use in chemical mechanical polishing are described, wherein the abrasive is in a slurry having gamma alumina formed in a low temperature fuming process, water, an acid sufficient to maintain the pH below about 7, wherein the slurry does not settle appreciably in an 8 to 24 hour period. Advantageously, the alumina is wet-milled without the use of wet-milling salt additives.
摘要翻译：描述了用于化学机械抛光的制造氧化铝磨料的方法，其中磨料是在低温发烟法中形成的具有γ氧化铝的浆料，水，足以将pH维持在约7以下的酸，其中浆料不在8至24小时的时间内明显地定居。有利地，氧化铝在不使用湿研磨盐添加剂的情况下被湿磨。

35. 发明授权

US07316976B2 Polishing method to reduce dishing of tungsten on a dielectric 有权
标题翻译：抛光方法可减少电介质上钨的凹陷
公开(公告)号：US07316976B2
公开(公告)日：2008-01-08
申请号：US11132315
申请日：2005-05-19
申请人： Haruki Nojo , Yoshibumi Suzuki
发明人： Haruki Nojo , Yoshibumi Suzuki
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02074 , B24B37/044 , C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The present invention relates generally to compositions and associated methods for chemical-mechanical polishing of substrate surfaces having at least one feature thereon comprising tungsten and at least one feature thereon comprising a dielectric material. The compositions and associated methods of the invention result in similar removal rates of both the tungsten and the dielectric material. Compositions used in the methods of the present invention typically have a pH from about 1.5 to about 3.5 and comprise periodic acid and colloidal silica.
摘要翻译：本发明一般涉及用于化学机械抛光基底表面的组合物和相关方法，所述基底表面具有其上至少一个特征，其上包括钨及其上的至少一个特征，其上包括电介质材料。本发明的组合物和相关方法导致钨和电介质材料的相似去除速率。用于本发明方法的组合物通常具有约1.5至约3.5的pH并且包含高碘酸和胶体二氧化硅。

36. 发明授权

US07276180B2 Chemical mechanical polishing composition and process 有权
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US07276180B2
公开(公告)日：2007-10-02
申请号：US10401405
申请日：2003-03-27
申请人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
发明人： Robert J. Small , Laurence McGhee , David J. Maloney , Maria L. Peterson
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要翻译：用于化学机械抛光的组合物包括浆料。在组合物中提供足够量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和介电材料的差异去除的pH。用于化学机械抛光的组合物通过包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，过乙酸或高碘酸的化学机械抛光来改善。用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除，以及用于化学机械抛光羟胺化合物，过硫酸铵，化合物为过氧化氢的间接来源，过乙酸或高碘酸。

37. 发明申请

US20120329279A1 CMP Slurry/Method for Polishing Ruthenium and Other Films 有权
标题翻译： CMP浆料/抛光钌和其他膜的方法
公开(公告)号：US20120329279A1
公开(公告)日：2012-12-27
申请号：US13325459
申请日：2011-12-14
申请人： Xiaobo Shi
发明人： Xiaobo Shi
IPC分类号： H01L21/306 , C09K13/04
CPC分类号： H01L21/306 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A method and associated composition for CMP processing of noble metal-containing substrates (such as ruthenium-containing substrates) afford both high removal rates of the noble metal and are tunable with respect to rate of noble metal removal in relation to removal of other films. Low levels of an oxidizing agent containing one or more peroxy-functional group(s) can be used along with a novel ligand to effectively polish noble metal substrates.
摘要翻译：含有贵金属的衬底（例如含钌衬底）的CMP处理方法和相关组合物提供贵金属的高去除率，相对于除去其它膜而言，贵金属除去速率可调。含有一个或多个过氧官能团的氧化剂的低含量可与新配体一起使用以有效地抛光贵金属基底。

38. 发明授权

US08114775B2 Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers 有权
标题翻译：用于具有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
公开(公告)号：US08114775B2
公开(公告)日：2012-02-14
申请号：US12352700
申请日：2009-01-13
申请人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo , Steven Masami Aragaki , Robin Edward Richards
发明人： Junaid Ahmed Siddiqui , Daniel Hernandez Castillo , Steven Masami Aragaki , Robin Edward Richards
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/02074 , H01L21/3212 , H01L21/32125
摘要： A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
摘要翻译：化学机械抛光组合物包含1）水，2）任选的研磨材料，3）氧化剂，优选每种型氧化剂，4）少量可溶性金属离子氧化剂/抛光促进剂，金属离子抛光促进剂与颗粒结合，例如磨料颗粒或两者; 和5）选自a）少量螯合剂中的至少一种，b）少量的二羟基烯醇化合物，和c）少量的有机促进剂。少于800ppm，优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的，但对钨尤其有用。本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物，特别是用于化学机械平面化的相关方法，其中浆料包含低水平的螯合自由基猝灭剂，非螯合自由基猝灭剂或二者。

39. 发明申请

US20110300710A1 Method for Forming Through-Base Wafer Vias for Fabrication of Stacked Devices 有权
标题翻译：用于形成用于堆叠设备的基底晶片通孔的形成方法
公开(公告)号：US20110300710A1
公开(公告)日：2011-12-08
申请号：US12959452
申请日：2010-12-03
申请人： James Matthew Henry , Daniel Hernandez Castillo, II
发明人： James Matthew Henry , Daniel Hernandez Castillo, II
IPC分类号： H01L21/306 , C09K13/00 , H01L21/304
CPC分类号： H01L23/147 , C09G1/02 , H01L21/30625 , H01L21/3212 , H01L21/486 , H01L21/6835 , H01L21/76898 , H01L25/0657 , H01L2221/68327 , H01L2221/6834 , H01L2225/06541 , H01L2924/0002 , H01L2924/10253 , H01L2924/00
摘要： An effective chemical mechanical planarization (CMP) method is provided for forming vias in silicon wafers for the fabrication of stacked devices using TSV (through-silicon via) technology. The method affords high removal rates of both metal (e.g., copper) and silicon such that a need for a grinding step prior to CMP processing may not be necessary. The method affords an approximately 1:1 Cu:Si selectivity for removal of silicon and copper under appropriate conditions and the Cu:Si selectivity is tunable by adjustment of levels of some key components.
摘要翻译：提供了一种有效的化学机械平面化（CMP）方法，用于在硅晶片中形成通孔，用于制造使用TSV（通过硅通孔）技术的堆叠器件。该方法提供金属（例如铜）和硅两者的高去除率，使得在CMP处理之前需要研磨步骤可能不是必需的。该方法在合适的条件下提供约1：1的Cu：Si选择性去除硅和铜，并且通过调整一些关键组分的水平来调节Cu：Si选择性。

40. 发明申请

US20110237079A1 METHOD FOR EXPOSING THROUGH-BASE WAFER VIAS FOR FABRICATION OF STACKED DEVICES 审中-公开
标题翻译：用于制造用于制造堆叠设备的通过基底波形六角形的方法
公开(公告)号：US20110237079A1
公开(公告)日：2011-09-29
申请号：US12888872
申请日：2010-09-23
申请人： Hyoung Sik Kim , Jung Hee Lee , Daniel Hernandez Castillo, II , James Matthew Henry
发明人： Hyoung Sik Kim , Jung Hee Lee , Daniel Hernandez Castillo, II , James Matthew Henry
IPC分类号： H01L21/306 , H01L21/304
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/31053 , H01L21/76898
摘要： An effective method for forming through-base wafer vias for the fabrication of stacked devices, such as electronic devices, is described. The base wafer can be a silicon wafer, in which case the method relates to TSV (through-silicon via) technology. The method affords high removal rates of silicon under appropriate conditions.
摘要翻译：描述了用于形成用于制造诸如电子装置的堆叠装置的通孔晶圆通孔的有效方法。基底晶片可以是硅晶片，在这种情况下，该方法涉及TSV（穿硅通孔）技术。该方法在合适的条件下提供高的硅去除率。

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