专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

WO2004049399A3 LATERALLY DIFUSSED MOS TRANSISTOR (LDMOS) AND METHOD OF MAKING SAME 审中-公开
公开(公告)号：WO2004049399A3
公开(公告)日：2004-06-10
申请号：PCT/US2003/037210
申请日：2003-11-19
申请人： CREE MICROWAVE, INC.
发明人： DARMAWAN, Johan , MASON, John
IPC分类号： H01L21/74
摘要： An improved laterally diffused MOS (LDMOS) transistor architecture is provided by using a nitride cap on a gate structure and forming a spacer around the gate structure and then self-aligning a source contact and drain contact with a gate by using the same mask for source and drain dopant implantation and for silicide formation with all source and drain areas being silicided. The reduced source/drain on resistance (Rdson), shorter distance from channel to source contact, and better gate oxide integrity improves operating linearity, increases Ft and GM and reduces the drift in Idq and Rdson.

32. 发明申请

WO2004032188A3 PACKAGED RF POWER TRANSISTOR HAVING RF BYPASSING/OUTPUT MATCHING NETWORK 审中-公开
公开(公告)号：WO2004032188A3
公开(公告)日：2004-04-15
申请号：PCT/US2003/029719
申请日：2003-09-17
申请人： CREE MICROWAVE, INC.
发明人： CRESCENZI, JR., Emil, James
IPC分类号： H04N9/00
摘要： The linearity of a wideband RF power transistor amplifier is improved by including output matching circuit and an integrated bias/RF diplexer with RF and video bypassing capacitor network within the transistor package and connected directly to the transistor. By placing the RF and video bypass power supply circuitry within the package and close to the transistor, the input impedance resonance can be increased from approximately 50 MHz to over 125 MHz, thereby reducing AM/PM distortion in the output signal.

33. 发明申请

WO2003009414A1 INVERTED COPLANAR WAVEGUIDE COUPLER WITH INTEGRAL MICROSTRIP CONNECTION PORTS 审中-公开
标题翻译：具有整体微波连接端口的反相共振波导耦合器
公开(公告)号：WO2003009414A1
公开(公告)日：2003-01-30
申请号：PCT/US2002/023045
申请日：2002-07-18
申请人： CREE MICROWAVE, INC.
发明人： CRESCENZI, Emil, James, Jr.
IPC分类号： H01P5/18
CPC分类号： H01P5/186 , H05K1/0237
摘要： A coplanar coupler (14) for use with microstrip input and output ports includes a printed circuit substrate in which first and second metal input ports are formed on a top surface and cooperate with a metal layer on the bottom surface as microstrip lines, and a first and second metal output ports formed on the top surface which cooperate with the metal layer on the bottom surface as microstrip lines. The metal layer (24) on the bottom surface functions as a ground plane for the input ports and output ports, the metal layer being removed in a coupler region underlying at least portions of the metal input and output ports and extending therebetween. First and second metal lines (31, 32) are formed on the bottom surface in the coupler region and function as a coplanar coupler for the input and output ports. Electrical vias in the substrate interconnect the ports and the coplanar coupler.
摘要翻译：用于微带输入和输出端口的共面耦合器（14）包括印刷电路基板，其中第一和第二金属输入端口形成在顶表面上，并与底面上的金属层作为微带线配合，并且第一以及形成在顶表面上的与金属层在底面上配合的第二金属输出端口，作为微带线。底表面上的金属层（24）用作输入端口和输出端口的接地平面，金属层在金属输入和输出端口的至少一部分下方的耦合器区域中移除并在其间延伸。第一和第二金属线（31,32）形成在耦合器区域的底表面上，并且用作用于输入和输出端口的共面耦合器。衬底中的电气通孔互连端口和共面耦合器。

34. 发明申请

WO2004049399A2 LATERALLY DIFUSSED MOS TRANSISTOR (LDMOS) AND METHOD OF MAKING SAME 审中-公开
标题翻译：横向扩散MOS晶体管（LDMOS）及其制造方法
公开(公告)号：WO2004049399A2
公开(公告)日：2004-06-10
申请号：PCT/US0337210
申请日：2003-11-19
申请人： CREE MICROWAVE INC
发明人： DARMAWAN JOHAN , MASON JOHN
IPC分类号： H01L21/336 , H01L29/10 , H01L29/45 , H01L29/49 , H01L29/78 , H01L
CPC分类号： H01L29/66659 , H01L29/1045 , H01L29/456 , H01L29/4933 , H01L29/7835
摘要： An improved laterally diffused MOS (LDMOS) transistor architecture is provided by using a nitride cap on a gate structure and forming a spacer around the gate structure and then self-aligning a source contact and drain contact with a gate by using the same mask for source and drain dopant implantation and for silicide formation with all source and drain areas being silicided. The reduced source/drain on resistance (Rdson), shorter distance from channel to source contact, and better gate oxide integrity improves operating linearity, increases Ft and GM and reduces the drift in Idq and Rdson.
摘要翻译：通过在栅极结构上使用氮化物盖并在栅极结构周围形成间隔物，然后通过使用相同的源极掩模对栅极进行源极接触和漏极接触来自对准，来提供改进的横向扩散MOS（LDMOS）晶体管结构漏极掺杂剂注入和硅化物形成，所有的源极和漏极区域被硅化。电阻降低（Rdson），沟道到源极接触距离更短，栅极氧化物完整性提高了工作线性，增加了Ft和GM，并减少了Idq和Rdson的漂移。

35. 发明申请

WO2003041168A1 SILICON ON INSULATOR DEVICE WITH IMPROVED HEAT REMOVAL AND METHOD OF MANUFACTURE 审中-公开
标题翻译：具有改进的热去除的绝缘体装置上的硅和制造方法
公开(公告)号：WO2003041168A1
公开(公告)日：2003-05-15
申请号：PCT/US2002/034860
申请日：2002-10-30
申请人： CREE MICROWAVE, INC.
发明人： DARMAWAN, Johan, Agus
IPC分类号： H01L27/01
CPC分类号： H01L29/78603 , H01L23/3677 , H01L2924/0002 , H01L2924/10158 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device is fabricated in a silicon on insulator “SOI” substrate including a supporting silicon substrate (10), a silicon oxide layer supported by the substrate, and a silicon layer overlying the silicon oxide layer. An electrical component is fabricated in the silicon layer over a portion of the silicon oxide layer (12), and then the substrate opposite from the component is masked and etched. A metal layer (20) is then formed in the portion of the substrate which has been removed by etching with the metal layer providing heat removal from the component. In an alternative embodiment, the silicon oxide layer overlying the portion of the substrate is removed with the metal layer abutting the silicon layer. In fabricating the device, preferential etching is employed to remove the silicon in the substrate with the silicon oxide functioning as an etchant stop. A two step process can be employed including a first oxide etch to etch the bulk of the silicon and then a more selective but slower etch. Then, the exposed silicon oxide can then be removed, as in the alternative embodiment, by a preferential etchant of silicon oxide.
摘要翻译：在包括支撑硅衬底10的硅绝缘体“SOI”衬底，由衬底支撑的氧化硅层和覆盖氧化硅层的硅层上制造半导体器件。在氧化硅层12的一部分上的硅层中制造电气部件，然后对与元件相对的基板进行掩模蚀刻。然后在衬底的部分中形成金属层20，该部分已经通过蚀刻除去金属层，从该部件提供热量去除。在替代实施例中，覆盖衬底部分的氧化硅层被去除，金属层邻接硅层。在制造该器件时，采用优先蚀刻来去除衬底中的硅，氧化硅起蚀刻剂停止的作用。可以采用两步法，包括第一氧化物蚀刻来蚀刻大部分硅，然后进行更多选择性但更慢的蚀刻。然后，如在替代实施例中那样，可以通过优选的氧化硅蚀刻剂去除暴露的氧化硅。

36. 发明申请

WO2003010833A3 FLIP CHIP BONDING OF LIGHT EMITTING DEVICES AND LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING 审中-公开
公开(公告)号：WO2003010833A3
公开(公告)日：2003-02-06
申请号：PCT/US2002/023120
申请日：2002-07-22
申请人： CREE, INC. , CREE MICROWAVE, INC.
发明人： SLATER, David , BHARATHAN, Jayesh , EDMOND, John , RAFFETTO, Mark , MOHAMMED, Anwar , NEGLEY, Gerry , ANDREWS, Peter
IPC分类号： H01L33/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

37. 发明申请

WO2004045070A1 IMPROVED RF TRANSISTOR AMPLIFIER LINEARITY USING SUPPRESSED THIRD ORDER TRANSCONDUCTANCE 审中-公开
标题翻译：改进的射频晶体管放大器线性使用禁止的第三命令交叉
公开(公告)号：WO2004045070A1
公开(公告)日：2004-05-27
申请号：PCT/US2003/035415
申请日：2003-11-04
申请人： CREE MICROWAVE, INC.
发明人： PENGELLY, Raymond, S. , WOOD, Simon, M. , QUINN, John, P.
IPC分类号： H03F3/68
CPC分类号： H03F3/602 , H03F1/3205 , H03F3/211
摘要： The linearity of a transistor amplifier comprising a plurality of transistors operating parallel is improved by reducing the odd order transconductance derivatives of signals generated by the transistors. The transistors can be provided in groups with each group having a different bias voltage applied thereto or each group of transistors can have a different input signal applied thereto. The groups of transistors can have different physical parameters suchas the width to length ratio of gates in field effect transistors and threshold voltages for the transistors.
摘要翻译：通过减少由晶体管产生的信号的奇数阶跨导导数，包括多个并联工作的晶体管的晶体管放大器的线性度得到改善。晶体管可以分组提供，每个组具有施加到其上的不同的偏置电压，或者每组晶体管可以具有施加到其上的不同的输入信号。晶体管组可以具有不同的物理参数，例如场效应晶体管中的栅极的宽比对于晶体管的阈值电压。

38. 发明申请

WO2004032188A2 PACKAGED RF POWER TRANSISTOR HAVING RF BYPASSING/OUTPUT MATCHING NETWORK 审中-公开
标题翻译：具有射频旁路/输出匹配网络的封装射频功率晶体管
公开(公告)号：WO2004032188A2
公开(公告)日：2004-04-15
申请号：PCT/US0329719
申请日：2003-09-17
申请人： CREE MICROWAVE INC
发明人： CRESCENZI JR EMIL JAMES
IPC分类号： H01L23/66 , H03F1/56 , H01L
CPC分类号： H03F3/195 , H01L23/66 , H01L2223/665 , H01L2224/48091 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H03F1/56 , H01L2924/00014 , H01L2924/00
摘要： The linearity of a wideband RF power transistor amplifier is improved by including output matching circuit and an integrated bias/RF diplexer with RF and video bypassing capacitor network within the transistor package and connected directly to the transistor. By placing the RF and video bypass power supply circuitry within the package and close to the transistor, the input impedance resonance can be increased from approximately 50 MHz to over 125 MHz, thereby reducing AM/PM distortion in the output signal.
摘要翻译：宽带RF功率晶体管放大器的线性度通过在晶体管封装内包含输出匹配电路和集成偏置/射频双工器以及RF和视频旁路电容器网络并直接连接至晶体管而得到改善。通过将RF和视频旁路电源电路放置在封装内并靠近晶体管，输入阻抗谐振可以从大约50MHz增加到超过125MHz，由此减少输出信号中的AM / PM失真。

39. 发明申请

WO2006102466A3 HIGH POWER DOHERTY AMPLIFIER USING MULTI-STAGE MODULES 审中-公开
标题翻译：使用多级模块的高功率放大器
公开(公告)号：WO2006102466A3
公开(公告)日：2007-04-05
申请号：PCT/US2006010498
申请日：2006-03-16
申请人： CREE MICROWAVE INC , CREE INC , PENGELLY RAYMOND S , CRESCENZI JAMES E JR , WOOD SIMON M , DEKKER TOM STEWART
发明人： PENGELLY RAYMOND S , CRESCENZI JAMES E JR , WOOD SIMON M , DEKKER TOM STEWART
IPC分类号： H03F3/68
CPC分类号： H03F1/0288
摘要： A high power Doherty RF amplifier utilizes multi-stage amplifier modules for both the main amplifier and the peak amplifiers. In one embodiment of a two way two stage amplifier, the first stage of each amplifier module can include signal pre-distortion whereby the first stage compensates for distortion in both the first and second stages. The design is simple and results in a high efficiency amplifier with high gain. In one embodiment, a commercially available CREE PFM19030SM power module is used in both the main amplifier and the peak amplifier.
摘要翻译：高功率Doherty RF放大器利用主放大器和峰值放大器的多级放大器模块。在双向两级放大器的一个实施例中，每个放大器模块的第一级可以包括信号预失真，由此第一级补偿第一级和第二级的失真。设计简单，产生了高增益的高效率放大器。在一个实施例中，市售的CREE PFM19030SM功率模块用于主放大器和峰值放大器。

40. 发明申请

WO2006102466A2 HIGH POWER DOHERTY AMPLIFIER USING MULTI-STAGE MODULES 审中-公开
标题翻译：使用多级模块的高功率放大器
公开(公告)号：WO2006102466A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/010498
申请日：2006-03-16
申请人： CREE MICROWAVE, INC. , CREE, INC. , PENGELLY, Raymond, S. , CRESCENZI, James, E., Jr. , WOOD, Simon, M. , DEKKER, Tom, Stewart
发明人： PENGELLY, Raymond, S. , CRESCENZI, James, E., Jr. , WOOD, Simon, M. , DEKKER, Tom, Stewart
IPC分类号： H03F3/68
CPC分类号： H03F1/0288
摘要： A high power Doherty RF amplifier utilizes multi-stage amplifier modules for both the main amplifier and the peak amplifiers. In one embodiment of a two way two stage amplifier, the first stage of each amplifier module can include signal pre-distortion whereby the first stage compensates for distortion in both the first and second stages. The design is simple and results in a high efficiency amplifier with high gain. In one embodiment, a commercially available CREE PFM19030SM power module is used in both the main amplifier and the peak amplifier.
摘要翻译：高功率Doherty RF放大器利用主放大器和峰值放大器的多级放大器模块。在双向两级放大器的一个实施例中，每个放大器模块的第一级可以包括信号预失真，由此第一级补偿第一级和第二级的失真。设计简单，产生了高增益的高效率放大器。在一个实施例中，市售的CREE PFM19030SM功率模块用于主放大器和峰值放大器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式