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21. 发明授权

US5066610A Capping technique for zone-melting recrystallization of insulated semiconductor films 失效
标题翻译：绝缘半导体膜的区域熔融再结晶封盖技术
公开(公告)号：US5066610A
公开(公告)日：1991-11-19
申请号：US410921
申请日：1989-09-22
申请人： Chenson K. Chen , Bor-Yeu Tsaur
发明人： Chenson K. Chen , Bor-Yeu Tsaur
IPC分类号： C30B13/00 , H01L21/20
CPC分类号： H01L21/2022 , C30B13/00 , C30B29/60 , Y10S117/906 , Y10S148/003 , Y10S148/015 , Y10S148/071 , Y10S148/074 , Y10S148/152 , Y10S148/154 , Y10S438/909
摘要： Wetting of encapsulated silicon-on-insulator (SOI) films during a zone-melting recrystallization (ZMR) process is enhanced by a high temperature anneal of the SOI structure in a reactive nitrogen-containing ambient to introduce nitrogen atoms to the polysilicon/silicon dioxide cap interface. The technique is not only more effective in present in cap fracture and enhancing crystal quality but is also susceptible to batch processing with noncritical parameters in a highly efficient, uniform manner. Preferably, the cap is exposed to 100% ammonia at 1100.degree. C. for one to three hours followed by a pure oxygen purge for twenty minutes. The ammonia atmosphere is reintroduced at the same temperature for another one to three hour period before ZMR. The process is believed to result in less than a half monolayer of nitrogen at the interior cap interface thereby significantly lowering the contact angle and improving the wetting character of the SOI structure.
摘要翻译：在区域熔融重结晶（ZMR）工艺中封装的绝缘体上硅（SOI）膜的润湿通过SOI反应性含氮环境中的SOI结构的高温退火而增强，以将氮原子引入多晶硅/二氧化硅帽接口。该技术不仅在目前的盖断裂和提高晶体质量方面更有效，而且还以高效，均匀的方式以非关键参数进行批处理。优选地，将盖子在1100℃下暴露于100％氨，持续1至3小时，然后用纯氧气吹扫20分钟。在ZMR之前，将氨气体在相同的温度下重新引入另外一至三个小时。认为该过程在内盖界面处导致小于半单位的氮，从而显着降低接触角并改善SOI结构的润湿特性。

22. 发明授权

US4950614A Method of making a tandem type semiconductor photoelectric conversion device 失效
标题翻译：制造串联型半导体光电转换装置的方法
公开(公告)号：US4950614A
公开(公告)日：1990-08-21
申请号：US303995
申请日：1989-01-30
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L31/0224 , H01L31/076 , H01L31/18
CPC分类号： H01L31/076 , H01L31/022466 , H01L31/1864 , Y02E10/548 , Y02P70/521 , Y10S148/004 , Y10S148/154 , Y10S438/931
摘要： A method of making a tandem type semiconductor photoelectric conversion device, comprising steps of: forming laminate member on a substrate by laminating first and second PIN structure of non-single crystal semiconductor in that order (or in the reverse order); forming an electrode on the laminate member; and crystallization an I-type layer of the second PIN structure by light irradiation (a) through the electrode (in this case, the electrode is transparent), or (b) from the side opposite from the substrate before formation of the electrode (or (a) from the side opposite from the substrate before formation of the first PIN structure, or (b) through the substrate (in this case, the substrate is transparent)).
摘要翻译：一种制造串联型半导体光电转换装置的方法，包括以下步骤：通过按顺序（或以相反的顺序）层叠非单晶半导体的第一和第二PIN结构，在基板上形成层叠构件; 在层叠构件上形成电极; 并且通过光照射（a）通过电极（在这种情况下，电极是透明的），或（b）从形成电极之前的与衬底相对的一侧（或者（b））形成第二PIN结构的I型层（a）在形成第一PIN结构之前从与衬底相对的一侧，或（b）通过衬底（在这种情况下，衬底是透明的））。

23. 发明授权

US4914053A Heteroepitaxial selective-area growth through insulator windows 失效
标题翻译：通过绝缘子窗口进行异质外延选择区域生长
公开(公告)号：US4914053A
公开(公告)日：1990-04-03
申请号：US94231
申请日：1987-09-08
申请人： Richard J. Matyi , Hisashi Shichijo
发明人： Richard J. Matyi , Hisashi Shichijo
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/02463 , H01L21/02546 , H01L21/0262 , H01L21/02639 , Y10S148/026 , Y10S148/048 , Y10S148/072 , Y10S148/154 , Y10S438/933
摘要： Preferred embodiments include growth of GaAs on insulator-masked silicon; the GaAs is single crystal over the silicon but polycrystalline over the insulator. A post=growth anneal extends the single crystal region over the insulator for distances of 2-4 .mu.m.
摘要翻译：优选的实施方案包括在绝缘体掩模的硅上生长GaAs; GaAs是硅上的单晶，而在绝缘体上是多晶的。柱=生长退火将绝缘体上的单晶区延伸到2-4μm的距离。

24. 发明授权

US4132571A Growth of polycrystalline semiconductor film with intermetallic nucleating layer 失效
标题翻译：具有金属间成核层的多晶半导体膜的生长
公开(公告)号：US4132571A
公开(公告)日：1979-01-02
申请号：US765497
申请日：1977-02-03
申请人： Jerome J. Cuomo , Thomas H. DiStefano , Robert Rosenberg
发明人： Jerome J. Cuomo , Thomas H. DiStefano , Robert Rosenberg
IPC分类号： C23C14/02 , C23C16/00 , C30B11/12 , C30B23/02 , C30B25/02 , C30B25/18 , B01J17/26
CPC分类号： C30B29/06 , C23C14/02 , C23C16/003 , C30B11/12 , C30B23/02 , C30B25/18 , Y10S148/061 , Y10S148/154
摘要： A method is disclosed for fabricating a thin elemental semiconductor, e.g., Si or Ge, film with columnar grains in a filamentary structure, by the use of an intermetallic compound incorporating the elemental semiconductor to form a nucleating layer for the growth of the semiconducting film. The semiconductor is grown from vapor phase by the technique of either vacuum evaporation or chemical vapor deposition, e.g., by decomposition of SiH.sub.4. The semiconductor e.g., Si, is initially deposited onto a thin film of a specific metal, e.g., Pt or Ni, on any inert substrate, e.g., SiO.sub.2 or Al.sub.2 O.sub.3, which is held at a temperature, e.g., 900.degree. C, above the eutectic point, i.e., 830.degree. C, of an intermetallic compound and the metallic film, and below the eutectic point, i.e., 979.degree. C, of another intermetallic compound and the semiconductor.Deposition of the semiconductor onto the metallic film produces a layer of liquid comprising the semiconductor and metal, which increases in thickness until the metallic layer is completely consumed. Additional deposition of the semiconductor produces a supersaturated liquid from which large crystallites of the intermetallic precipitate. With increasing deposition of semiconductor, the crystallites of intermetallic material continue to grow until they consume all of the metal in the liquid, at which point no liquid remains. Continuing deposition of semiconductor material results in the growth of filamentary crystallites of the semiconductor out of the intermetallic surface. The result is a columnar film of the semiconductor with a filamentary structure originating from the crystallites of intermetallic nucleating material.
摘要翻译：公开了通过使用掺入元素半导体的金属间化合物形成用于半导体膜的生长的成核层来制造薄元素半导体的方法，例如具有丝状结构的柱状晶粒的Si或Ge薄膜。通过真空蒸发或化学气相沉积的技术，例如通过SiH 4的分解，从气相生长半导体。半导体例如Si最初沉积在特定金属（例如Pt或Ni）的薄膜上，任何惰性基底上，例如SiO 2或Al 2 O 3，其保持在例如900℃以上的温度共晶点，即830℃的金属间化合物和金属膜，低于另一种金属间化合物和半导体的共晶点，即979℃。

25. 发明授权

US4012235A Solid phase epitaxial growth 失效
标题翻译：固相外延生长
公开(公告)号：US4012235A
公开(公告)日：1977-03-15
申请号：US565129
申请日：1975-04-04
申请人： James W. Mayer , Marc A. Nicolet , Silvanus S. Lau
发明人： James W. Mayer , Marc A. Nicolet , Silvanus S. Lau
IPC分类号： C30B1/02 , H01L21/20 , H01L21/225 , H01L21/285
CPC分类号： H01L21/28525 , C30B1/026 , C30B29/06 , H01L21/02381 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/2251 , Y10S148/017 , Y10S148/025 , Y10S148/026 , Y10S148/106 , Y10S148/118 , Y10S148/122 , Y10S148/142 , Y10S148/154 , Y10S148/166 , Y10S438/923 , Y10S438/929
摘要： A solid phase epitaxially grown semi-conductor is described wherein a thin film of a semi-conductor material together with a thin film dopant are transported through a metal film onto a substrate, using a temperature below the eutectic temperature for the material.
摘要翻译：描述了一种固相外延生长的半导体，其中半导体材料的薄膜与薄膜掺杂剂一起通过金属膜被转移到基底上，使用低于该共晶温度的材料。

26. 发明授权

US3413157A Solid state epitaxial growth of silicon by migration from a silicon-aluminum alloy deposit 失效
标题翻译：通过从硅铝合金沉积物迁移，硅的固态外延生长
公开(公告)号：US3413157A
公开(公告)日：1968-11-26
申请号：US49918965
申请日：1965-10-21
申请人： IBM
发明人： KUIPER LUBERTUS L
IPC分类号： C30B1/02 , C30B19/02 , H01L21/00 , H01L21/20 , H01L29/00
CPC分类号： H01L21/00 , C30B1/02 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/02491 , H01L21/02532 , H01L29/00 , Y10S148/003 , Y10S148/026 , Y10S148/142 , Y10S148/154 , Y10S148/166 , Y10S148/17
摘要： 1,148,409. Epitaxial silicon deposition. INTERNATIONAL BUSINESS MACHINES CORP. 20 Oct., 1966 [21 Oct., 1965], No. 46895/66. Heading C1A. [Also in Divisions C7 and H1] An epitaxial Si layer is grown on a Si substrate by depositing Si and Al thereon (e.g. by evaporation of an Al or Si alloy on successive layers of Al and Si) and heating the coated base at a temperature below the Al-Si eutectic temperature to cause a crystalline Si layer to grow on the substrate surface (e.g. at 565‹ C.).

27. 发明授权

US5019529A Heteroepitaxial growth method 失效
标题翻译：异质外延生长法
公开(公告)号：US5019529A
公开(公告)日：1991-05-28
申请号：US346455
申请日：1989-05-02
申请人： Kanetake Takasaki
发明人： Kanetake Takasaki
IPC分类号： H01L21/20 , H01L21/324
CPC分类号： H01L21/02463 , H01L21/02381 , H01L21/02502 , H01L21/02513 , H01L21/02543 , H01L21/02546 , H01L21/0262 , Y10S148/025 , Y10S148/072 , Y10S148/097 , Y10S148/154 , Y10S438/933 , Y10S438/938
摘要： A heteroepitaxial growth method wherein a III-V group compound semiconductor is formed on a silicon substrate. A first amorphous III-V group compound semiconductor layer is formed on the silicon substrate before forming a III-V group compound semiconductor crystal layer on the amorphous III-V group compound semiconductor layer. A second amorphous III-V group semiconductor layer having a thickness greater than the crystal layer is formed on the III-V group compound semiconductor crystal layer and subjected to a solid phase epitaxial growth whereby the second amorphous III-V group compound semiconductor layer is made a single crystalline layer.

28. 发明授权

US4954856A Semiconductor photoelectric conversion device and method of making the same 失效
标题翻译：半导体光电转换装置及其制造方法
公开(公告)号：US4954856A
公开(公告)日：1990-09-04
申请号：US336550
申请日：1989-04-10
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L31/0224 , H01L31/076 , H01L31/18
CPC分类号： H01L31/076 , H01L31/022466 , H01L31/1864 , Y02E10/548 , Y02P70/521 , Y10S148/004 , Y10S148/154 , Y10S438/931
摘要： A photosensitive device including a laminate member incorporating a PIN junction where at least the portions of the I layer adjacent the P and N layers are crystallized and the P and N layers are non-single-crystalline where the degree of crystallization of the portions of the I layer is greater than that of the P and N layers. At least one of the P and N layers is made of silicon carbide and the I layer is photoannealed and contains one atom % or less oxygen. In one embodiment, the device is a tandem device including first and second photoelectric conversion devices where the second device is formed on the first device and where the first device has the same characteristics as the above described laminate member.
摘要翻译：一种感光装置，其包括结合了PIN结的层压构件，其中至少部分与P层和N层相邻的I层的结晶化，并且P层和N层是非单晶的，其中部分的结晶度 I层大于P层和N层。 P层和N层中的至少一层由碳化硅制成，I层被光退火并含有1原子％以下的氧。在一个实施例中，该装置是包括第一和第二光电转换装置的串联装置，其中第二装置形成在第一装置上，并且第一装置具有与上述层叠构件相同的特性。

29. 发明授权

US4952527A Method of making buffer layers for III-V devices using solid phase epitaxy 失效
标题翻译：使用固相外延制备III-V器件缓冲层的方法
公开(公告)号：US4952527A
公开(公告)日：1990-08-28
申请号：US157806
申请日：1988-02-19
申请人： Arthur R. Calawa , Frank W. Smith , Michael J. Manfra , Chang-Lee Chen
发明人： Arthur R. Calawa , Frank W. Smith , Michael J. Manfra , Chang-Lee Chen
IPC分类号： H01L21/20 , H01L21/285 , H01L21/335 , H01L21/337 , H01L21/338 , H01L21/8252 , H01L29/10 , H01L29/51 , H01L29/812 , H01L31/09 , H01L31/18 , H01S5/02 , H01S5/026 , H01S5/223
CPC分类号： H01L29/517 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L21/02634 , H01L21/28587 , H01L21/8252 , H01L29/1075 , H01L29/66462 , H01L29/66863 , H01L29/66924 , H01L29/8128 , H01L31/09 , H01L31/184 , H01S5/0208 , H01S5/021 , H01S5/026 , H01S5/223 , Y02E10/544 , Y02P70/521 , Y10S148/003 , Y10S148/025 , Y10S148/041 , Y10S148/056 , Y10S148/154 , Y10S438/971
摘要： A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300.degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.
摘要翻译：描述了新的III-IV缓冲材料，其通过MBE的III-V化合物的低温生长产生，其具有独特和期望的性质，特别是对于紧密间隔的亚微米栅极长度有源III-V半导体器件，例如HEMT，MESFET 和MISFET的。在III-V材料GaAs的情况下，缓冲液在砷稳定生长条件下以1微米/小时的生长速率和优选在150至约300℃的衬底温度下生长。新材料是结晶的，高度电阻的，光学上无活性的，并且可以用高质量的III-V有源层过度生长。

30. 发明授权

US4778775A Buried interconnect for silicon on insulator structure 失效
标题翻译：埋在绝缘体结构的互连
公开(公告)号：US4778775A
公开(公告)日：1988-10-18
申请号：US54806
申请日：1987-05-27
申请人： J. C. Tzeng
发明人： J. C. Tzeng
IPC分类号： H01L21/20 , H01L21/74 , H01L23/535 , H01L21/263 , H01L21/225
CPC分类号： H01L21/2026 , H01L21/743 , H01L23/535 , H01L2924/0002 , Y10S148/048 , Y10S148/071 , Y10S148/091 , Y10S148/154
摘要： Improved processing for forming an interconnect in a process where a recrystallized polysilicon layer is formed over an insulative layer and where recrystallization takes place through a plurality of seed windows formed in the insulative layer. A doped region is formed in the substrate prior to deposition of the polysilicon layer. The polysilicon layer is in contact with at least a portion of the doped region through an opening in the insulative layer. Recrystallization takes place through this opening, and, for instance, the doped region is electrically connected to a source or drain region of a semiconductor device formed in the recrystallized layer.
摘要翻译：改进了在绝缘层上形成再结晶多晶硅层并且通过形成在绝缘层中的多个种子窗发生再结晶的工艺中形成互连的处理。在沉积多晶硅层之前在衬底中形成掺杂区域。多晶硅层通过绝缘层中的开口与掺杂区域的至少一部分接触。通过该开口进行重结晶，例如，掺杂区域电连接到形成在再结晶层中的半导体器件的源极或漏极区域。

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