会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 27. 发明专利
    • Porous capacitor, and method of manufacturing the same
    • 多孔电容器及其制造方法
    • JP2013161931A
    • 2013-08-19
    • JP2012022287
    • 2012-02-03
    • Taiyo Yuden Co Ltd太陽誘電株式会社
    • MASUDA HIDETOSHI
    • H01G4/33
    • H01G4/01H01G4/018H01G4/302H01G9/048H01G13/06
    • PROBLEM TO BE SOLVED: To provide a porous capacitor designed to improve mechanical strength, and a method of manufacturing the same.SOLUTION: The porous capacitor includes a first conductor layer (21) and a second conductor layer (22) facing each other with a prescribed distance kept between, a dielectric layer (23) made of the oxide of a valve metal that is interposed between the first conductor layer and the second conductor layer, a large number of holes (24) formed so as to reach the first conductor layer and the second conductor layer respectively in a direction almost perpendicular to the first conductor layer and the second conductor layer, a first electrode (25) and a second electrode (26) formed by filling a conductive material in the holes, and insulating parts (24a, 24b) for electrically disconnecting the first electrode from the second conductor layer, and electrically disconnecting the second electrode from the first conductor layer. The positions of the terminals of the first and/or second electrode on the side that is not electrically connected to the first conductor layer or the second conductor layer are made uneven.
    • 要解决的问题:提供设计用于提高机械强度的多孔电容器及其制造方法。解决方案:多孔电容器包括第一导体层(21)和第二导体层(22),所述第一导体层(21)和第二导体层(22) 由介于第一导体层和第二导体层之间的阀金属的氧化物构成的电介质层(23),形成有多个孔(24),以形成为达到第一导体层 和第二导体层分别在与第一导体层和第二导体层大致垂直的方向上,通过在孔中填充导电材料形成的第一电极(25)和第二电极(26)以及绝缘部(24a ,24b),用于将第一电极与第二导体层电断开,以及将第二电极与第一导体层电断开。 第一和/或第二电极的不与第一导体层或第二导体层电连接的一侧的端子的位置不均匀。
    • 28. 发明专利
    • Manufacturing method of film for film capacitor, film, and film capacitor
    • 薄膜电容器,薄膜和薄膜电容器薄膜的制造方法
    • JP2013026390A
    • 2013-02-04
    • JP2011158987
    • 2011-07-20
    • Daikin Ind Ltdダイキン工業株式会社
    • OTSUKA KEISUKE
    • H01G4/18
    • H01G4/18H01G13/06Y02T10/7022
    • PROBLEM TO BE SOLVED: To allow for removal of a metal film around an insulation defective part while forming a metal film on both surfaces of a film for a film capacitor by a relatively simple step.SOLUTION: A manufacturing method of a film for a film capacitor comprises: a first deposition step of forming a metal film (23) by depositing a metal on one surface (22a) of a film body (22); a removal step of removing the metal film (23) around an insulation defective part (30) existing in the film body (22) by applying voltage to the other surface (22b) of the film body (22) after the first deposition step; and a second deposition step of forming a metal film (24) by depositing the metal on the other surface (22b) of the film body (22) after the removal step.
    • 要解决的问题:为了允许在绝缘缺陷部分周围去除金属膜,同时通过相对简单的步骤在用于薄膜电容器的膜的两个表面上形成金属膜。 薄膜电容器薄膜的制造方法包括:通过在薄膜体(22)的一个表面(22a)上沉积金属来形成金属薄膜(23)的第一沉积步骤; 去除步骤,通过在第一沉积步骤之后向膜体(22)的另一个表面(22b)施加电压,去除存在于膜体(22)中的绝缘缺陷部分(30)周围的金属膜(23) 以及第二沉积步骤,通过在去除步骤之后将金属沉积在膜体(22)的另一个表面(22b)上来形成金属膜(24)。 版权所有(C)2013,JPO&INPIT
    • 29. 实用新型
    • 금속화 플라스틱 필름으로부터 금속막을 벗겨내는 장치
    • 从金属化塑料薄膜剥离金属薄膜的设备
    • KR2019930019535U
    • 1993-09-23
    • KR2019930002365
    • 1993-02-20
    • 가이또매뉴팩처링코우.,엘티디.
    • 마사오가이또
    • B29B17/00
    • C23C14/562B29C63/0013C23C14/14C23C14/58H01G13/06
    • 본고안은종래의장치에비해경제적으로작동하며, 금속막을벗겨낼때벗겨진금속막의잔여량이외부로확산되지않는, 금속화플라스틱필름에서금속막을벗겨내는장치에관한것이본 장치는금속화플라스틱필름의축과권취축사이에서, 음극전압(또는양극전압) 공급롤러및 양극전압(또는음극전압) 인가용전극봉을구비하고, 상기전극봉하부에서압축롤러를구비하며, 매번의벗김단계에서 360/(는 10, 20, 30, 40, 60, 90 또는 180임개의벗김수단; 플라스틱필름을가압하는압축롤러를포함하는압축수단; 금속막의잔여량을제거하는연마수단; 및상부에서개구부를하부에서분진흡인구를지니며, 상기벗김수단및 상기연마수단을수납하는하우징으로구성된다.
    • 纸内并比常规设备经济运行,金属膜的剩余量剥离naelttae关闭金属薄膜不会扩散到外部,即本发明的装置涉及一种装置,剥离在金属化的塑料膜的金属膜是金属化的塑料膜轴和 (或阳极电压)供应辊和用于施加正电压(或负电极电压)的电极,以及位于电极底部的压缩辊,其中360 / ,30,40,60,90或180次,包括用于压制塑料膜的压缩辊的压缩装置,用于除去金属膜的剩余量的抛光装置, ,剥离装置以及用于容纳抛光装置的壳体。
    • 30. 发明公开
    • 커패시터 형성 방법 및 이를 이용한 반도체 장치 제조 방법
    • 形成电容器的方法和使用其制造半导体器件的方法
    • KR1020120028509A
    • 2012-03-23
    • KR1020100090390
    • 2010-09-15
    • 삼성전자주식회사
    • 오정민윤보언최규완이근택강대혁박임수이동석김영후
    • H01L21/8242H01L27/108
    • H01G13/06
    • PURPOSE: A method for forming a capacitor and a method for manufacturing a semiconductor device using the same are provided to prevent a short circuit between bottom electrodes by forming a bowing preventing film having a lower etching rate than that of a mold film in forming a capacitor. CONSTITUTION: A first mold film, a supporting film, a second mold film, a bowing preventing film, and a third mold film are successively formed on a top side of a substrate. The third mold film, the bowing preventing film, the second mold film, the supporting film, and the first mold film are etched partly and a first opening(150b) is formed which to expose a conductive region. A bottom electrode(190) electrically connected to the conductive region is formed on an inner wall of the first opening. The third mold film, the bowing preventing film, and the second mold film are removed. A supporting film pattern(150a) is formed by eliminating a part of the supporting film.
    • 目的:提供一种用于形成电容器的方法和使用该电容器的半导体器件的制造方法,以通过在形成电容器中形成具有比模具膜蚀刻速率低的蚀刻速率的弓形防止膜来防止底部电极之间的短路 。 构成:在基板的上侧依次形成第一模膜,支撑膜,第二模膜,防弓膜,第三模膜。 部分地蚀刻第三模具薄膜,防弓薄膜,第二模具薄膜,支撑薄膜和第一模具薄膜,并形成露出导电区域的第一开口(150b)。 电连接到导电区域的底部电极(190)形成在第一开口的内壁上。 去除第三模具薄膜,防弓薄膜和第二模具薄膜。 通过消除支撑膜的一部分来形成支撑膜图案(150a)。