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21. 发明申请

WO2017066023A1 CONTROLLING AN ION BEAM IN A WIDE BEAM CURRENT OPERATION RANGE 审中-公开
标题翻译：在宽光束电流操作范围内控制离子束
公开(公告)号：WO2017066023A1
公开(公告)日：2017-04-20
申请号：PCT/US2016/055125
申请日：2016-10-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： CHANG, Shengwu , ROUNDS, Kristen , LEAVITT, William , BROSNAN, Daniel
IPC分类号： H01J37/317 , H01J27/02 , H01J37/30
CPC分类号： H01J37/3002 , H01J37/12 , H01J37/3171 , H01J2237/047 , H01J2237/04735 , H01J2237/04756 , H01J2237/04924
摘要： Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. The system further includes a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply. In an exemplary approach, the lens is electrically insulated from the terminal suppression electrode and independently driven, thus allowing for an increased beam current operation range.
摘要翻译：本文提供用于控制加速器/减速器内的离子束的方法。在示例性方法中，离子注入系统包括用于产生离子束的离子源和耦合到端子的端子抑制电极，其中端子抑制电极被配置为通过端子抑制电极的孔传导离子束，以及从第一电压源向离子束施加第一电位。该系统还包括耦合到端子并且邻近端子抑制电极设置的透镜，其中透镜被配置为通过透镜的孔传导离子束并且将第二电势从第二电压源提供给离子束。在示例性方法中，透镜与终端抑制电极电绝缘且独立驱动，因此允许增加电子束电流操作范围。

22. 发明申请

WO2017040039A1 GAS INJECTION SYSTEM FOR ION BEAM DEVICE 审中-公开
标题翻译：离子束装置气体注入系统
公开(公告)号：WO2017040039A1
公开(公告)日：2017-03-09
申请号：PCT/US2016/047236
申请日：2016-08-17
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： WALLACE, Jay , ALLEN, Ernest , HERTEL, Richard , DANIELS, Kevin , GILCHRIST, Glen
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/3244 , H01J37/02 , H01J37/3056 , H01J2237/006 , H01J2237/20228 , H01L21/68764
摘要： A gas injection system for an ion beam device, the gas injection system including an extraction plate, an extraction aperture formed in the extraction plate for allowing passage of an ion beam, a first gas distributor removably fastened to the extraction plate on a first side of the extraction aperture, the first gas distributor having a gas orifice formed therein, a second gas distributor removably fastened to the extraction plate on a second side of the extraction aperture opposite the first side, the second gas distributor having a gas orifice formed therein, a first gas conduit extending through the extraction plate between the first gas distributor and a gas manifold mounted to the extraction plate, and a second gas conduit extending through the extraction plate between the second gas distributor the gas manifold, and a residue removal gas source connected to the gas manifold.
摘要翻译：一种用于离子束装置的气体注入系统，所述气体注入系统包括提取板，形成在所述提取板中用于允许离子束通过的提取孔，在所述提取板的第一侧上可移除地紧固到所述提取板的第一气体分配器所述提取孔，所述第一气体分配器具有形成在其中的气体孔口;第二气体分配器，其在所述提取孔的与所述第一侧相对的第二侧上可拆卸地紧固到所述提取板，所述第二气体分配器具有形成在其中的气体孔口; 第一气体管道，其延伸穿过第一气体分配器和安装到提取板的气体歧管之间的提取板，以及第二气体导管，其延伸穿过第二气体分配器之间的提取板，气体歧管和残留物去除气体源连接到气体歧管。

23. 发明申请

WO2017019335A1 CONTROLLING CONTAMINATION PARTICLE TRAJECTORY FROM A BEAM-LINE ELECTROSTATIC ELEMENT 审中-公开
标题翻译：从光束静电元件控制污染颗粒物
公开(公告)号：WO2017019335A1
公开(公告)日：2017-02-02
申请号：PCT/US2016/042493
申请日：2016-07-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： LEE, William Davis , LIKHANSKII, Alexandre
IPC分类号： H01L21/265 , H01J37/317 , H01L21/683
CPC分类号： H01J37/05 , H01J37/12 , H01J37/3171 , H01J2237/022 , H01J2237/028
摘要： Provided herein are approaches for controlling particle trajectory from a beam-line electrostatic element. A beam-line electrostatic element is disposed along a beam-line of an electrostatic filter (EF), and a voltage is supplied to the beam-line electrostatic element to generate an electrostatic field surrounding the beam-line electrostatic element, agitating a layer of contamination particles formed on the beam-line electrostatic element. A trajectory of a set of particles from the layer of contamination particles is then modified to direct the set of particles to a desired location within the EF. The trajectory is controlled by providing an additional electrode adjacent the beam-line electrostatic element, and supplying a voltage to the additional electrode to control a local electrostatic field in proximity to the beam-line electrostatic element. In another approach, the trajectory is influenced by one or more geometric features of the beam-line electrostatic element.
摘要翻译：本文提供了用于从束线静电元件控制粒子轨迹的方法。沿着静电滤波器（EF）的光束线设置光束线静电元件，并且向束线静电元件供应电压以产生围绕光束线静电元件的静电场，搅动一层形成在束线静电元件上的污染颗粒。然后修改来自污染颗粒层的一组颗粒的轨迹，以将该组颗粒引导到EF内的期望位置。通过在光束线静电元件附近提供附加电极来控制轨迹，并且向附加电极提供电压以控制靠近光束线静电元件的局部静电场。在另一种方法中，轨迹受到束线静电元件的一个或多个几何特征的影响。

24. 发明申请

WO2017014948A1 SELECTIVE PROCESSING OF A WORKPIECE 审中-公开
标题翻译：选择性处理工作
公开(公告)号：WO2017014948A1
公开(公告)日：2017-01-26
申请号：PCT/US2016/041101
申请日：2016-07-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： AMATO, Mark R. , LEE, William Davis , RENO, Jillian
IPC分类号： H01L21/265 , H01L21/02 , H01L21/3065 , H01L21/324
CPC分类号： H01J37/3171 , C23C14/48 , H01J37/08 , H01J37/20 , H01J37/3026 , H01J2237/20214 , H01J2237/31761 , H01J2237/31766 , H01L21/265 , H01L21/425
摘要： Systems and methods for the selective processing of a particular portion of a workpiece are disclosed. For example, the outer portion may be processed by directing an ion beam toward a first position on the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two first locations. The workpiece is then rotated relative to the ion beam about its center so that certain regions of the outer portion are exposed to the ion beam. The workpiece is then moved relative to the ion beam to a second position and rotated in the opposite direction so that all regions of the outer portion are exposed to the ion beam. This process may be repeated a plurality of times. The ion beam may perform any process, such as ion implantation, etching or deposition.
摘要翻译：公开了用于选择性处理工件的特定部分的系统和方法。例如，可以通过将离子束引导到工件上的第一位置来处理外部部分，其中离子束在两个第一位置处延伸超过工件的外边缘。然后工件相对于离子束绕其中心旋转，使得外部部分的某些区域暴露于离子束。然后将工件相对于离子束移动到第二位置并沿相反方向旋转，使得外部部分的所有区域暴露于离子束。该过程可以重复多次。离子束可以执行任何过程，例如离子注入，蚀刻或沉积。

25. 发明申请

WO2017003866A1 VACUUM COMPATIBLE LED SUBSTRATE HEATER 审中-公开
标题翻译：真空兼容LED基板加热器
公开(公告)号：WO2017003866A1
公开(公告)日：2017-01-05
申请号：PCT/US2016/039262
申请日：2016-06-24
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： VOPAT, Robert Brent , WYKA, Gary E. , BLAHNIK, David , SCHALLER, Jason M. , WEAVER, William T.
IPC分类号： H01L21/67 , H01L33/00
CPC分类号： H01L21/67115 , H01L21/67109 , H05B3/0047
摘要： A system for heating substrates within a chamber, which may be maintained at vacuum conditions, is disclosed. The LED substrate heater comprises a base having a recessed portion surrounded by sidewalls. A plurality of light emitting diodes (LEDs) are disposed within the recessed portion. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon or a coating on the silicon, thus efficiently and quickly heating the substrate. A transparent window is disposed over the recessed portion, forming a sealed enclosure in which the LEDs are disposed. A sealing gasket may be disposed between the sidewalls and the window.
摘要翻译：公开了一种用于加热可在真空条件下保持的室内基体的系统。 LED基板加热器包括具有由侧壁包围的凹部的基座。多个发光二极管（LED）设置在凹部内。 LED可以是GaN或GaP LED，其以在硅上易于吸收的波长发射光，或者在硅上发射光，从而有效且快速地加热衬底。透明窗口设置在凹部上方，形成其中设置有LED的密封外壳。密封垫片可以设置在侧壁和窗户之间。

26. 发明申请

WO2016186913A1 A SOURCE HOUSING ASSEMBLY FOR CONTROLLING ION BEAM EXTRACTION STABILITY AND ION BEAM CURRENT 审中-公开
标题翻译：用于控制离子束提取稳定性和离子束电流的源壳体组件
公开(公告)号：WO2016186913A1
公开(公告)日：2016-11-24
申请号：PCT/US2016/031752
申请日：2016-05-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： CHANG, Shengwu , BURGESS, Jeff , LEAVITT, William , ST PETER, Michael , MOSHER, Matthew , OLSON, Joseph, C. , SINCLAIR, Frank
IPC分类号： H01L21/265 , H01J37/317
CPC分类号： H01J27/08 , H01J3/04 , H01J5/02 , H01J9/18 , H01J9/385 , H01J27/024 , H01J37/08
摘要： Provided herein are approaches for improving ion beam extraction stability and ion beam current for an ion extraction system. In one approach, a source housing assembly may include a source housing surrounding an ion source including an arc chamber, the source housing having an extraction aperture plate mounted at a proximal end thereof. The source housing assembly further includes a vacuum liner disposed within an interior of the source housing to form a barrier around a set of vacuum pumping apertures. As configured, openings in the source housing assembly, other than an opening in the extraction aperture plate, are enclosed by the extraction aperture plate and the vacuum liner, thus ensuring appendix arcs or extraneous ions produced outside the arc chamber remain within the source housing. Just those ions produced within the arc chamber exit the source housing through the opening of the extraction aperture plate.
摘要翻译：本文提供了用于提高离子提取系统的离子束提取稳定性和离子束电流的方法。在一种方法中，源壳体组件可以包括围绕包括电弧室的离子源的源壳体，源壳体具有安装在其近端处的抽吸孔板。源壳体组件还包括设置在源壳体的内部中以在一组真空泵浦孔周围形成屏障的真空衬套。根据构造，源壳体组件中除了提取孔板中的开口之外的开口被提取孔板和真空衬套包围，从而确保在电弧室外产生的附加电弧或外来离子保留在源壳体内。恰好在电弧室内产生的那些离子通过提取孔板的开口离开源壳体。

27. 发明申请

WO2016172034A1 METHOD FOR FABRICATING THREE DIMENSIONAL DEVICE 审中-公开
标题翻译：制作三维装置的方法
公开(公告)号：WO2016172034A1
公开(公告)日：2016-10-27
申请号：PCT/US2016/028082
申请日：2016-04-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： SUN, Shiyu , YOSHIDA, Naomi , COLOMBEAU, Benjamin , GROSSMANN, Hans-Joachim L.
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/66803 , H01L21/26586 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L29/1054 , H01L29/4238
摘要： A method for forming a three dimensional device. The method may include directing ions to an end surface of an extension region of a fin structure, the fin structure extending perpendicularly from a substrate plane and having a fin axis parallel to the substrate plane, wherein the ions have trajectories extending in a plane perpendicular to the substrate plane and parallel to the fin axis, wherein a portion of the fin structure is covered by a gate structure defining a channel region, and wherein the end surface is not covered by the gate structure.
摘要翻译：一种形成三维装置的方法。该方法可以包括将离子引导到翅片结构的延伸区域的端表面，翅片结构从衬底平面垂直延伸并且具有平行于衬底平面的鳍轴线，其中离子具有在垂直于衬底的平面中延伸的轨迹基板平面并平行于翅片轴线，其中翅片结构的一部分由限定沟道区域的栅极结构覆盖，并且其中端面不被栅极结构覆盖。

28. 发明申请

WO2016061430A1 SYSTEM FOR MEASURING MATERIAL THICKNESSES AT HIGH TEMPERATURES 审中-公开
标题翻译：在高温下测量材料厚度的系统
公开(公告)号：WO2016061430A1
公开(公告)日：2016-04-21
申请号：PCT/US2015/055877
申请日：2015-10-16
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： KELLERMAN, Peter L. , MORADIAN, Ala , SINCLAIR, Frank
IPC分类号： H01L21/66
CPC分类号： C30B15/206 , C30B15/002 , C30B15/06 , C30B15/20 , C30B29/06 , C30B29/64 , G01N29/07 , G01N29/2462 , G01N29/28 , G01N2291/02854
摘要： A sheet-forming apparatus including a crucible for holding a melt of material and a solid sheet of the material disposed within the melt, a crystallizer disposed above the crucible and configured to form the sheet from the melt, and an ultrasonic measurement system disposed adjacent the crystallizer, the ultrasonic measurement system comprising at least one ultrasonic measurement device including a waveguide coupled to an ultrasonic transducer for directing an ultrasonic pulse through the melt.
摘要翻译：一种片材成形设备，包括用于保持材料熔体的坩埚和设置在熔体内的材料的固体片，结晶器，其设置在坩埚上方并构造成从熔体形成片材;以及超声波测量系统，所述超声波测量系统包括至少一个超声波测量装置，所述超声波测量装置包括耦合到超声换能器的波导，用于引导超声脉冲通过熔体。

29. 发明申请

WO2015142552A1 THERMISTOR BASED MEASUREMENT SYSTEM 审中-公开
标题翻译：基于热敏电阻的测量系统
公开(公告)号：WO2015142552A1
公开(公告)日：2015-09-24
申请号：PCT/US2015/019451
申请日：2015-03-09
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： NELSON, Larry G.
IPC分类号： G01R31/26 , G01R19/32
CPC分类号： G01K7/22 , G01F1/6847 , G01F1/6888 , G01F1/6965 , G01F1/698 , G01K13/02 , G01K2013/024 , G01K2201/02 , G01P5/12
摘要： A measurement system for monitoring ambient temperature and airspeed is disclosed. The measurement system uses a single temperature sensor, disposed in the environment under test, in communication with a controller. The controller supplies a first current to the temperature sensor to measure the ambient temperature of the environment. This first current is selected so that it results in little or no self-heating of the temperature sensor. After the ambient temperature is determined, a second, higher current is applied to the temperature sensor. This higher current serves to heat the temperature sensor be a predetermined amount. Based on the expected temperature rise, the ambient temperature and the actual monitored temperature, the airspeed may be determined.
摘要翻译：公开了一种用于监测环境温度和空速的测量系统。测量系统使用安装在被测环境中的单个温度传感器与控制器通信。控制器向温度传感器提供第一电流以测量环境的环境温度。选择该第一电流，使得其几乎不导致温度传感器的自加热。在确定环境温度之后，向温度传感器施加第二较高的电流。该较高的电流用于将温度传感器加热到预定量。根据预期的温度上升，环境温度和实际监测温度，可以确定空速。

30. 发明申请

WO2015123074A1 METHOD AND APPARATUS FOR THREE DIMENSIONAL ION IMPLANTATION 审中-公开
标题翻译：用于三维离子植入的方法和装置
公开(公告)号：WO2015123074A1
公开(公告)日：2015-08-20
申请号：PCT/US2015/014533
申请日：2015-02-05
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： CHANG, Shengwu
IPC分类号： H01L21/265
CPC分类号： H01J37/1474 , H01J37/3007 , H01J37/3171 , H01J2237/15 , H01J2237/30483 , H01J2237/31701
摘要： A scan system for processing a substrate with an ion beam may include a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis.
摘要翻译：用于用离子束处理衬底的扫描系统可以包括用于接收具有带状束形状的离子束的扫描器，所述带状束具有沿第一轴的波束宽度和沿着垂直于第一轴的第二轴的波束高度第一轴，梁宽度比梁高度至少大三倍; 以及扫描电源，用于向扫描仪发送信号以产生偏转磁场，所述偏转场沿着第二轴线偏转带状光束。

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