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    • 21. 发明申请
    • Apparatus for transferring a tray
    • 用于传送托盘的装置
    • US20060147298A1
    • 2006-07-06
    • US11325465
    • 2006-01-05
    • Sung JungMin Hwang
    • Sung JungMin Hwang
    • B65G1/133
    • H01L21/67751B65G1/133
    • An apparatus for transferring an upright tray at high speeds that can sense an entrance and discharge of the tray. The apparatus includes a transferring unit with pulleys driven by a driving source to form a transferring path. The pulleys contact a fixing member, which is attached to a lower edge of a substrate and mask fixed to the tray. The apparatus also includes a sensing unit with a sensor installed beneath the transferring path to detect the entrance and discharge of the tray. The apparatus may also include rollers disposed to contact both sides of the upper portion of the tray, and the rollers may be coupled with moveable members encased within rails along the transferring path so that the rollers can translate when a tray passes between two rollers. The rollers along both sides of the tray can be arranged symmetrically or alternately in a zigzag pattern.
    • 一种用于高速传送直立托盘的装置,其可感测托盘的进入和排出。 该装置包括一转印单元,该转印单元具有由驱动源驱动的带轮,以形成转印路径。 滑轮接触固定构件,固定构件附接到基板的下边缘并且掩模固定到托盘。 该装置还包括感测单元,其具有安装在传送路径下方的传感器,以检测托盘的进入和排出。 该设备还可以包括设置成接触托盘上部两侧的滚子,并且滚子可与沿着传送路径包围在轨道内的可移动部件联接,使得当托盘通过两个滚筒之间时,辊可以平移。 沿托盘两侧的辊可以以锯齿形图案对称地或交替地布置。
    • 24. 发明申请
    • Non-volatile memory device and fabricating method thereof
    • 非易失性存储器件及其制造方法
    • US20050139900A1
    • 2005-06-30
    • US11019304
    • 2004-12-23
    • Sung JungJum Kim
    • Sung JungJum Kim
    • H01L21/8247H01L27/115H01L29/423H01L29/788H01L29/76H01L21/336
    • H01L27/11521H01L27/115H01L29/42336H01L29/7883
    • The present invention provides a non-volatile memory device and fabricating method thereof, in which a height of a floating gate conductor layer pattern is sustained without lowering a degree of integration and by which a coupling ratio is raised. The present invention includes a trench type device isolation layer defining an active area within a semiconductor substrate, a recess in an upper part of the device isolation layer to have a prescribed depth, a tunnel oxide layer on the active area of the semiconductor substrate, a floating gate conductor layer pattern on the tunnel oxide layer, a conductive floating spacer layer provided to a sidewall of the floating gate conductor layer pattern and a sidewall of the recess, a gate-to-gate insulating layer on the floating fate conductor layer pattern and the conductive floating spacer layer, and a control gate conductor layer on the gate-to-gate insulating layer.
    • 本发明提供了一种非易失性存储器件及其制造方法,其中浮动栅极导体层图案的高度在不降低积分度的情况下被维持并且耦合比率被提高。 本发明包括限定半导体衬底内的有源区域的沟槽型器件隔离层,在器件隔离层的上部具有规定深度的凹部,半导体衬底的有源区上的隧道氧化物层, 在所述隧道氧化物层上的浮栅导体层图案,设置在所述浮栅导体层图案的侧壁和所述凹部的侧壁的导电浮动间隔层,所述浮置导体层图案上的栅极至栅极绝缘层,以及 导电浮动间隔层,以及栅极至栅极绝缘层上的控制栅极导体层。