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    • 21. 发明申请
    • Antifuse element and method of manufacture
    • 防腐元件及其制造方法
    • US20060292754A1
    • 2006-12-28
    • US11169951
    • 2005-06-28
    • Won MinRobert BairdJiang-Kai ZuoGordon Lee
    • Won MinRobert BairdJiang-Kai ZuoGordon Lee
    • H01L29/04H01L21/82
    • H01L23/5252H01L27/112H01L27/11206H01L2924/0002Y10S438/981H01L2924/00
    • An antifuse element (102, 152, 252, 302, 352, 402, 602, 652, 702) and method of fabricating the antifuse element, including a substrate material (101) having an active area (106) formed in an upper surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a gate oxide layer (110) disposed between the gate electrode (104) and the active area (106). The gate oxide layer (110) including the fabrication of one of a gate oxide dip (128) or a gate oxide undercut (614). During operation a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the gate oxide layer (110) and a rupture of the gate oxide layer (110) in a rupture region (130). The rupture region (130) defined by the oxide structure and the gate oxide dip (128) or the gate oxide undercut (614).
    • 反熔断元件(102,152,252,302,352,402,602,652,702)以及制造反熔丝元件的方法,包括在上表面形成有有效区域(106)的基板材料(101) 具有位于有源区(106)上方的至少一部分的栅电极(104)和设置在栅电极(104)和有源区(106)之间的栅极氧化层(110)。 栅极氧化物层(110)包括制造栅极氧化物浸渍(128)或栅极氧化物底切(614)之一。 在操作期间,施加在栅极电极(104)和有源区域(106)之间的电压产生穿过栅极氧化物层(110)的电流路径以及在破裂区域(130)中的栅极氧化物层(110)的破裂。 由氧化物结构和栅极氧化物浸渍(128)或栅极氧化物底切(614)限定的断裂区域(130)。