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    • 28. 发明授权
    • Read only memory capable of writing data and method of writing/reading
data therefor
    • 只读能够写入数据的存储器和写入/读取数据的方法
    • US5426609A
    • 1995-06-20
    • US202241
    • 1994-02-25
    • Yasuhiro Okuda
    • Yasuhiro Okuda
    • G11C17/00G11C16/02G11C16/10G11C16/26G11C7/00
    • G11C16/26G11C16/10
    • A read only memory capable of writing data, which is provided with a number of "0" judging circuit (8) judging whether or not the number of bits of "0" of data to be written in the memory cell array (1) is more than a half or more of a predetermined bit length, a monitor bit cell group (9) storing the above judge result by corresponding it to the respective data, and with a data inverting select circuit (12) outputting the values of the respective bits of the data after inverting them to a data writing/reading circuit (2) when the number of bits of "0" in the data to be written is judged to be a half or more of the predetermined bit length, and outputting the values of the respective bits of data read from the memory cell array (1) after inverting them when the monitor bit cell group (9) stored that the number of bits of "0" in the data to be read is a half or more of the predetermined bit length, and is capable of reducing an aluminum width of a power source of a PROM, and, when the data length to be written by one writing operation is enlarged, is no need to enlarge the aluminum width of the power source line and is capable of reducing electric current to be consumed for there.
    • 具有能够写入数据的只读存储器,其被提供有多个“0”判断电路(8),判断要写入存储单元阵列(1)的数据的“0”的位数是否为 超过预定位长度的一半以上的监视比特单元组(9),通过将上述判断结果存储在各个数据中,并将数据反相选择电路(12)输出到各位的值 在将要写入的数据中的“0”的位数判定为预定位长度的一半以上时,将数据反转后的数据写入到数据写入/读取电路(2) 当监视比特单元组(9)存储时,在要读取的数据中的“0”的比特数是预定的数据的一半或更多时,从存储单元阵列(1)读出的数据的各个比特在反相之后, 并且能够减少PROM的电源的铝宽度,并且当d 通过一次写入操作来写入的长度被放大,不需要扩大电源线的铝宽度,并且能够减少要消耗的电流。
    • 30. 发明授权
    • Anisotropic conductive film
    • 各向异性导电膜
    • US08133412B2
    • 2012-03-13
    • US12918731
    • 2009-09-18
    • Masamichi YamamotoYasuhiro Okuda
    • Masamichi YamamotoYasuhiro Okuda
    • H01B1/00B32B7/12C08L29/04
    • H05K3/323C08G2650/56C08L29/14C08L71/00C09J163/00H01B1/22H05K3/361Y10T428/2857C08L2666/04
    • An anisotropic conductive film 2 contains electrically conductive particles 6 dispersed in an adhesive agent 30 for electrode connection, the adhesive agent containing an epoxy resin, which is an insulating thermosetting resin, as a main component, a phenoxy resin having a molecular weight of 30,000 or more, a latent hardener, a polyvinyl butyral resin having a glass-transition temperature of 100° C. or higher, and a polyvinyl butyral resin having a glass-transition temperature of 90° C. or lower. There is provided the high-heat-resistant anisotropic conductive film which suppresses a reduction in repairability and which can be used for electrodes having a finer pitch, i.e., having a minimum pitch of 150 μm or less, when electrodes are connected with the anisotropic conductive film.
    • 各向异性导电膜2包含分散在用于电极连接的粘合剂30中的导电颗粒6,包含作为主要成分的绝缘热固性树脂的环氧树脂的粘合剂,分子量为30,000的苯氧基树脂或 更具体地说,可以使用玻璃化转变温度为100℃以上的潜在硬化剂,聚乙烯醇缩丁醛树脂和玻璃化转变温度为90℃以下的聚乙烯醇缩丁醛树脂。 提供了抑制可修复性降低的高耐热各向异性导电膜,并且当电极与各向异性导电体连接时,可以用于具有更细间距的电极,即具有150μm或更小的最小间距的电极 电影。