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21. 发明授权

US06716718B2 Method of producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US06716718B2
公开(公告)日：2004-04-06
申请号：US09972147
申请日：2001-10-09
申请人： Hiroyuki Nagatani , Kouji Taniguchi
发明人： Hiroyuki Nagatani , Kouji Taniguchi
IPC分类号： H01L2176
CPC分类号： H01L21/76235
摘要： A trench is formed by performing an anisotropic etching treatment on a silicon substrate with the use of a mask pattern including a pad oxide film, a polysilicon film, and a silicon nitride film formed on the silicon substrate, as a mask. Next, the side surface of the polysilicon film is retreated by etching so that the part of an oxide film formed on the side surface of the polysilicon film may not be hung over the part of an oxide film formed on the side surface of the pad oxide film. Next, an oxide film is formed by performing a thermal oxidation treatment on the inner wall surface of the trench including the exposed side surface of the polysilicon film. This produces a semiconductor device that prevents voids from being formed in a trench isolation structure.
摘要翻译：通过使用包括形成在硅衬底上的衬垫氧化物膜，多晶硅膜和氮化硅膜的掩模图案作为掩模，在硅衬底上进行各向异性蚀刻处理来形成沟槽。接下来，通过蚀刻来回退多晶硅膜的侧表面，使得形成在多晶硅膜的侧表面上的氧化膜的部分不会悬挂在形成在衬垫氧化物的侧表面上的氧化膜的部分上电影。接下来，通过对包括多晶硅膜的暴露侧表面的沟槽的内壁表面进行热氧化处理来形成氧化物膜。这产生了防止在沟槽隔离结构中形成空隙的半导体器件。

22. 发明授权

US5444011A Method for forming a thin film capacitive memory deivce with a high dielectric constant 失效
标题翻译：用于形成具有高介电常数的薄膜电容式存储器的方法
公开(公告)号：US5444011A
公开(公告)日：1995-08-22
申请号：US253296
申请日：1994-06-03
申请人： Kouji Taniguchi
发明人： Kouji Taniguchi
IPC分类号： H01L27/04 , H01L21/02 , H01L21/28 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/43 , H01L29/92 , H01L21/70
CPC分类号： H01L29/43 , H01L27/10808 , H01L28/60 , H01L28/55 , H01L28/84
摘要： A method is disclosed for making a thin film capacitive memory device with a high dielectric constant. A lower electrode of yttrium or hafnium is formed on a semiconductor substrate. A dielectric insulating film is formed on the lower electrode, and the dielectric insulating film is annealed such that at thinner portions the dielectric insulating film, the lower electrode is oxidized more heavily than at thicker portions of the dielectric insulating film. An upper electrode is formed on the dielectric insulating film.
摘要翻译：公开了制造具有高介电常数的薄膜电容式存储器件的方法。在半导体衬底上形成钇或铪的下电极。在下部电极上形成介电绝缘膜，并且在电介质绝缘膜的较薄部分，电介质绝缘膜的下部电极比介电绝缘膜的较厚部分氧化得更为严重。在电介质绝缘膜上形成上电极。

23. 发明授权

US5356657A Method of manufacturing an electroluminescent device 失效
标题翻译：制造电致发光器件的方法
公开(公告)号：US5356657A
公开(公告)日：1994-10-18
申请号：US779235
申请日：1991-10-18
申请人： Kousuke Terada , Akiyoshi Mikami , Kouji Taniguchi , Koichi Tanaka , Masaru Yoshida , Shigeo Nakajima
发明人： Kousuke Terada , Akiyoshi Mikami , Kouji Taniguchi , Koichi Tanaka , Masaru Yoshida , Shigeo Nakajima
IPC分类号： C09K11/57 , C09K11/88 , H05B33/10 , H05B33/14 , H01J9/12
CPC分类号： H05B33/14 , C09K11/574 , C09K11/883 , H05B33/10 , Y10S428/917
摘要： Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.
摘要翻译：公开了一种电致发光器件，其在衬底上包括衬底和电致发光膜，其中电致发光膜由II-VI族化合物半导体衬底和电致发光中心元件构成; 存在的改进在于电致发光膜具有六方晶系的晶体结构，并且含有浓度（Ci）为0.5-4atm的电致发光中心元件。的厚度为0.2微米，并且浓度（Cr）为0.15〜0.7at。％，并且C 1大于Cr，以及其制备方法。

24. 发明授权

US5346776A Electroluminescent panel 失效
标题翻译：电致发光面板
公开(公告)号：US5346776A
公开(公告)日：1994-09-13
申请号：US853938
申请日：1992-03-19
申请人： Kouji Taniguchi , Koichi Tanaka , Kousuke Terada , Akiyoshi Mikami , Masaru Yoshida
发明人： Kouji Taniguchi , Koichi Tanaka , Kousuke Terada , Akiyoshi Mikami , Masaru Yoshida
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22
CPC分类号： H05B33/22 , H05B33/10 , H05B33/12 , H05B33/14 , Y10S428/917
摘要： A multi-color electroluminescent panel comprising common electrodes and a plurality of transparent electrodes, an EL light emitting layer disposed between the common and transparent electrodes and capable of exhibiting a hysteresis in light emission luminance versus applied voltage characteristic, and band-pass color filters provided on the EL light emitting layer for passing therethrough light of a particular color emitted from the EL light emitting layer.
摘要翻译：一种包括公共电极和多个透明电极的多色电致发光面板，设置在公共电极和透明电极之间并且能够在发光亮度与施加电压特性方面呈现滞后性的EL发光层和提供的带通滤色器在EL发光层上通过从EL发光层发射的特定颜色的光。

25. 发明授权

US5116640A Process for preparing an electroluminescent device 失效
标题翻译：制备电致发光器件的方法
公开(公告)号：US5116640A
公开(公告)日：1992-05-26
申请号：US594139
申请日：1990-10-10
申请人： Akiyoshi Mikami , Takashi Ogura , Kousuke Terada , Masaru Yoshida , Takuo Yamashita , Koichi Tanaka , Katsushi Okibayashi , Shigeo Nakajima , Hiroaki Nakaya , Kouji Taniguchi
发明人： Akiyoshi Mikami , Takashi Ogura , Kousuke Terada , Masaru Yoshida , Takuo Yamashita , Koichi Tanaka , Katsushi Okibayashi , Shigeo Nakajima , Hiroaki Nakaya , Kouji Taniguchi
IPC分类号： C23C16/30 , C23C16/34 , C23C16/40 , C23C16/54 , H01L21/205 , H05B33/10
CPC分类号： H05B33/10 , C23C16/306 , C23C16/345 , C23C16/402 , C23C16/54
摘要： A process for preparing an electroluminescent device includes the steps of forming an insulating layer and a luminescent layer on a substrate, wherein the insulating and luminescent layers are respectively formed at different forming areas in the same deposition chamber.
摘要翻译：制备电致发光器件的方法包括在衬底上形成绝缘层和发光层的步骤，其中绝缘层和发光层分别形成在同一淀积室中的不同形成区域。

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