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21. 发明授权

US10375318B2 Apparatuses and methods for optical calibration 有权
公开(公告)号：US10375318B2
公开(公告)日：2019-08-06
申请号：US15696791
申请日：2017-09-06
申请人： Xuesong Li , Siyi Dai
发明人： Xuesong Li , Siyi Dai
IPC分类号： G01N21/64 , H04N5/247 , G06F17/50 , H04N5/225
摘要： An apparatus for optical calibration includes a calibration target simulating a combustion. The calibration target further includes a first light-emitting pattern and a first light-emitting mechanism effecting the first light-emitting pattern. The apparatus includes two optical cameras aiming at the calibration target, wherein each optical camera has an observation axis and there is an angle between the two observation axes.

22. 发明授权

US09324634B2 Semiconductor interconnect structure having a graphene-based barrier metal layer 有权
标题翻译：具有石墨烯阻挡金属层的半导体互连结构
公开(公告)号：US09324634B2
公开(公告)日：2016-04-26
申请号：US13291470
申请日：2011-11-08
申请人： Junjing Bao , Shaoning Yao , Xuesong Li , Samuel S. S. Choi
发明人： Junjing Bao , Shaoning Yao , Xuesong Li , Samuel S. S. Choi
IPC分类号： H01L23/482 , H01L23/532 , H01L21/768 , H01L23/48 , B82Y40/00
CPC分类号： H01L23/4827 , B82Y40/00 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/481 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interconnect structure into the dielectric layer, are disclosed. At least one opening is formed in a dielectric layer. A graphene-based barrier metal layer disposed on the dielectric layer is formed. A seed layer disposed on the graphene-based barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the graphene-based barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.
摘要翻译：一种用于制造具有增强的性能和可靠性的互连结构的互连结构和方法，所述互连结构和方法通过利用基于石墨烯的阻挡金属层来阻挡从电介质层渗入互连结构中的氧，并阻止从互连结构到电介质层的铜扩散，被披露。在电介质层中形成至少一个开口。形成设置在电介质层上的基于石墨烯的阻挡金属层。形成设置在石墨烯阻挡金属层上的种子层。形成设置在种子层上的电镀铜层。形成平坦化表面，其中除去石墨烯基阻挡金属层，籽晶层和电镀铜层的一部分。此外，形成设置在平坦化表面上的覆盖层。

23. 发明申请

US20140370189A1 Method for synthesis of Graphene Films With Large Area and High Throughput 审中-公开
标题翻译：用于合成具有大面积和高通量的石墨烯膜的方法
公开(公告)号：US20140370189A1
公开(公告)日：2014-12-18
申请号：US13916611
申请日：2013-06-13
申请人： Xuesong Li , Jia-Hung Wu , Hao Ning
发明人： Xuesong Li , Jia-Hung Wu , Hao Ning
IPC分类号： C23C16/26 , C23C16/54
CPC分类号： C23C16/26 , C23C16/458
摘要： Improved methods for synthesizing large area thin films are disclosed, which result in films of enhanced width. The methods comprise providing a separator material which is rolled or wound up, along with the metallic foil substrate on which the thin film is to be deposited, to form a coiled composite which is then subjected to conventional chemical vapor deposition. Optionally, a winding tool may be used to aid in the rolling process. The methods enable a many-fold increase in the effective width of the substrate to be achieved.
摘要翻译：公开了用于合成大面积薄膜的改进方法，这导致宽度增加的膜。所述方法包括提供与要沉积薄膜的金属箔基材一起卷起或卷起的隔板材料，以形成螺旋复合材料，然后将该复合材料进行常规化学气相沉积。可选地，卷绕工具可用于帮助轧制过程。这些方法使待实现的基底的有效宽度增加多倍。

24. 发明申请

US20140076738A1 ELECTROCHEMICAL ETCHING APPARATUS 审中-公开
标题翻译：电化学蚀刻装置
公开(公告)号：US20140076738A1
公开(公告)日：2014-03-20
申请号：US13618564
申请日：2012-09-14
申请人： Shu-Jen Han , Lian Guo , Xuesong Li
发明人： Shu-Jen Han , Lian Guo , Xuesong Li
IPC分类号： C25F3/02
CPC分类号： C25F7/00 , B32B38/10 , C01B32/186 , C25F3/02 , C25F5/00
摘要： An electroplating etching apparatus includes a power supply to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.
摘要翻译：电镀蚀刻装置包括用于输出电流的电源和构造成容纳电解质的容器。阴极耦合到容器并且构造成与电解液流体连通。阳极电连接到输出端，并且包括石墨烯层。在石墨烯层上形成金属基底层，并响应于流过阳极的电流从石墨烯层中蚀刻出金属基底层。

25. 发明申请

US20130344246A1 Dual-Chamber Reactor for Chemical Vapor Deposition 审中-公开
标题翻译：用于化学气相沉积的双室反应器
公开(公告)号：US20130344246A1
公开(公告)日：2013-12-26
申请号：US13529070
申请日：2012-06-21
申请人： Xuesong Li
发明人： Xuesong Li
IPC分类号： C23C16/455
CPC分类号： F27B17/0025 , C23C16/46 , C23C16/54
摘要： An apparatus for performing film deposition includes one or more processing tubes, a heat source, one or more reactant gas manifolds, and one or more exhaust gas manifolds. The one or more processing tubes define a first reaction space and a second reaction space that are not in gaseous communication. The heat source is translatable so as to direct energy into the first reaction space when the energy source is in a first position, and to direct energy into the second reaction space when the energy source is in a second position. The one or more reactant gas manifolds are operative to introduce a first reactant gas flow into the first reaction space, and to introduce a second reactant gas flow into the second reaction space. The one or more exhaust gas manifolds are operative to exhaust gases from the first reaction space and from the second reaction space.
摘要翻译：用于进行膜沉积的装置包括一个或多个处理管，热源，一个或多个反应气体歧管以及一个或多个排气歧管。一个或多个处理管限定不与气体连通的第一反应空间和第二反应空间。热源是可平移的，以便当能量源处于第一位置时将能量引导到第一反应空间中，并且当能量源处于第二位置时将能量引导到第二反应空间中。一个或多个反应物气体歧管可操作以将第一反应气流引入第一反应空间，并将第二反应气流引入第二反应空间。一个或多个废气歧管可操作以从第一反应空间和第二反应空间排出气体。

26. 发明授权

US08470400B2 Graphene synthesis by chemical vapor deposition 有权
标题翻译：石墨烯化学气相沉积合成
公开(公告)号：US08470400B2
公开(公告)日：2013-06-25
申请号：US12774342
申请日：2010-05-05
申请人： Luigi Colombo , Xuesong Li , Rodney S. Ruoff
发明人： Luigi Colombo , Xuesong Li , Rodney S. Ruoff
IPC分类号： C23C16/00
CPC分类号： C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/186
摘要： Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.
摘要翻译：合成石墨烯薄膜的方法。石墨烯膜可以通过将基板上的金属或电介质加热到400℃和1400℃之间的温度来合成。将金属或电介质暴露于有机化合物，从而从金属或电介质上的有机化合物生长石墨烯。然后将金属或电介质冷却至室温。作为上述方法的结果，独立的石墨烯膜可以合成具有相当于天然石墨剥离的石墨烯的性质，该石墨烯的尺寸远大于在碳化硅，单晶硅衬底或天然石墨上可获得的尺寸。

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