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21. 发明授权

US07242459B2 Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated Eigen decomposition model 有权
标题翻译：使用校准的特征分解模型预测和最小化由于曝光工具的混合/匹配造成的OPC偏差的方法
公开(公告)号：US07242459B2
公开(公告)日：2007-07-10
申请号：US11044711
申请日：2005-01-28
申请人： Xuelong Shi , Jang Fung Chen
发明人： Xuelong Shi , Jang Fung Chen
IPC分类号： G03B27/32
CPC分类号： G03F7/705 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/70441 , G03F7/70516 , G03F7/70525
摘要： A method for generating models for simulating the imaging performance of a plurality of exposure tools. The method includes the steps of: generating a calibrated model for a first exposure tool capable of estimating an image to be produced by the first exposure tool for a given photolithography process, where the calibrated model includes a first set of basis functions; generating a model of a second exposure tool capable of estimating an image to be produced by the second exposure tool for the photolithography process, where the model includes a second set of basis functions; and representing the second set of basis functions as a linear combination of the first set of basis functions so as to generate an equivalent model function corresponding to the second exposure tool, where the equivalent model function produces a simulated image corresponding to the image generated by the second exposure tool for the photolithography process.
摘要翻译：一种用于产生用于模拟多个曝光工具的成像性能的模型的方法。该方法包括以下步骤：产生用于第一曝光工具的校准模型，该第一曝光工具能够对于给定的光刻工艺估计由第一曝光工具产生的图像，其中校准模型包括第一组基础函数; 生成第二曝光工具的模型，其能够估计由用于光刻工艺的第二曝光工具产生的图像，其中模型包括第二组基础功能; 并且将所述第二组基函数表示为所述第一组基函数的线性组合，以便生成与所述第二曝光工具相对应的等效模型函数，其中所述等效模型函数产生与由所述第二曝光工具生成的图像相对应的模拟图像用于光刻工艺的第二曝光工具。

22. 发明申请

US20060080633A1 Method for performing full-chip manufacturing reliability checking and correction 有权
标题翻译：执行全芯片制造可靠性检查和校正的方法
公开(公告)号：US20060080633A1
公开(公告)日：2006-04-13
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt Wampler , Duan-Fu Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt Wampler , Duan-Fu Hsu , Xuelong Shi
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译：一种生成用于成像处理模式的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

23. 发明申请

US20050149902A1 Eigen decomposition based OPC model 失效
标题翻译：基于特征分解的OPC模型
公开(公告)号：US20050149902A1
公开(公告)日：2005-07-07
申请号：US10981750
申请日：2004-11-05
申请人： Xuelong Shi , Robert Socha , Thomas Laidig , Douglas Broeke
发明人： Xuelong Shi , Robert Socha , Thomas Laidig , Douglas Broeke
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G06F17/50 , G06K9/00 , H01L21/027
CPC分类号： G03F1/36 , G03F7/705
摘要： Model OPC is developed based on eigen decomposition of an aerial image expected to be produced by a mask pattern on a surface of a resist. With the eigen decomposition method the aerial image intensity distribution around a point (x, y) is accurately described in the model. A scalar approach may be used in the eigen decomposition model which treats the light wave through the mask as a scalar quantity. A eigen decomposition alternatively may use a vector approach which utilizes a vector to describe the light wave and the pupil function. A predicted SPIF may be generated from the aerial image which may be used to verify the mask modeling process by comparing the predicted SPIF to an experimentally determined SPIF. The model OPC, once calibrated, may be used to evaluate performance of a mask and refine features of the mask.
摘要翻译：基于通过抗蚀剂表面上的掩模图案预期产生的空间图像的特征分解开发OPC模型。利用特征分解方法，在模型中准确描述了点（x，y）周围的空间图像强度分布。在本征分解模型中可以使用标量法，其将通过掩模的光波视为标量。本征分解可以使用向量来描述光波和瞳孔函数的矢量方法。可以从空间图像生成预测的SPIF，其可以用于通过将预测的SPIF与实验确定的SPIF进行比较来验证掩模建模过程。模型OPC，一旦校准，可以用于评估掩模的性能和细化掩模的特征。

24. 发明授权

US06519760B2 Method and apparatus for minimizing optical proximity effects 有权
公开(公告)号：US06519760B2
公开(公告)日：2003-02-11
申请号：US09840305
申请日：2001-04-24
申请人： Xuelong Shi , Jang Fung Chen , Stephen Hsu
发明人： Xuelong Shi , Jang Fung Chen , Stephen Hsu
IPC分类号： G06F1750
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

25. 发明授权

US07434195B2 Method for performing full-chip manufacturing reliability checking and correction 有权
标题翻译：执行全芯片制造可靠性检查和校正的方法
公开(公告)号：US07434195B2
公开(公告)日：2008-10-07
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
IPC分类号： G06F17/50 , G06K9/00 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译：一种生成用于成像处理模式的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

26. 发明授权

US07175940B2 Method of two dimensional feature model calibration and optimization 有权
公开(公告)号：US07175940B2
公开(公告)日：2007-02-13
申请号：US10266922
申请日：2002-10-09
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

27. 发明授权

US06245491B1 Photo-assisted post exposure bake for chemically amplified photoresist process 有权
标题翻译：用于化学放大光刻胶工艺的光辅助后曝光烘烤
公开(公告)号：US06245491B1
公开(公告)日：2001-06-12
申请号：US09245604
申请日：1999-02-05
申请人： Xuelong Shi
发明人： Xuelong Shi
IPC分类号： G03F738
CPC分类号： G03F7/38 , G03F7/0045
摘要： Acid diffusion induced critical dimension change in a chemically amplified photoresist process is suppressed by lowering the reaction activation energy barrier. Energy required to overcome the reaction activation energy barrier is provided directly to the chemical bonds that are involved in the chemical reactions, rather than providing energy solely by thermal heating, thereby significantly increasing reaction rate without increasing acid diffusion.
摘要翻译：通过降低反应活化能垒可以抑制化学放大的光致抗蚀剂工艺中的酸扩散引起的临界尺寸变化。克服反应活化能势垒所需的能量直接提供给化学反应中涉及的化学键，而不是仅通过热加热提供能量，从而显着提高反应速率而不增加酸扩散。

28. 发明授权

US07440082B2 Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated eigen decomposition model 有权
标题翻译：使用校准的特征分解模型预测和最小化由于曝光工具的混合/匹配造成的OPC偏差的方法
公开(公告)号：US07440082B2
公开(公告)日：2008-10-21
申请号：US11819366
申请日：2007-06-27
申请人： Xuelong Shi , Jang Fung Chen
发明人： Xuelong Shi , Jang Fung Chen
IPC分类号： G03B27/32
CPC分类号： G03F7/705 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/70441 , G03F7/70516 , G03F7/70525
摘要： A method for generating models for simulating the imaging performance of a plurality of exposure tools. The method includes the steps of: generating a calibrated model for a first exposure tool capable of estimating an image to be produced by the first exposure tool for a given photolithography process, where the calibrated model includes a first set of basis functions; generating a model of a second exposure tool capable of estimating an image to be produced by the second exposure tool for the photolithography process, where the model includes a second set of basis functions; and representing the second set of basis functions as a linear combination of the first set of basis functions so as to generate an equivalent model function corresponding to the second exposure tool, where the equivalent model function produces a simulated image corresponding to the image generated by the second exposure tool for the photolithography process.
摘要翻译：一种用于产生用于模拟多个曝光工具的成像性能的模型的方法。该方法包括以下步骤：产生用于第一曝光工具的校准模型，该第一曝光工具能够对于给定的光刻工艺估计由第一曝光工具产生的图像，其中校准模型包括第一组基础函数; 生成第二曝光工具的模型，其能够估计由用于光刻工艺的第二曝光工具产生的图像，其中模型包括第二组基础功能; 并且将所述第二组基函数表示为所述第一组基函数的线性组合，以便生成与所述第二曝光工具相对应的等效模型函数，其中所述等效模型函数产生与由所述第二曝光工具生成的图像相对应的模拟图像用于光刻工艺的第二曝光工具。

29. 发明授权

US07100145B2 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs 有权
公开(公告)号：US07100145B2
公开(公告)日：2006-08-29
申请号：US10938510
申请日：2004-09-13
申请人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
发明人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

30. 发明授权

US6100012A Infra-red radiation post-exposure bake process for chemically amplified resist lithography 失效
标题翻译：用于化学放大抗蚀剂光刻的红外辐射曝光后烘烤工艺
公开(公告)号：US6100012A
公开(公告)日：2000-08-08
申请号：US110642
申请日：1998-07-06
申请人： Xuelong Shi
发明人： Xuelong Shi
IPC分类号： G03F7/004 , G03F7/38 , G03C5/00
CPC分类号： G03F7/38 , G03F7/0045
摘要： A photolithographic process for use in semiconductor device manufacturing that includes an infrared radiation-based post exposure bake (PEB) of a chemically amplified resist layer and that improves critical dimension control of a patterned resist layer. The use of infrared radiation with a wavenumber that is preferentially absorbed in the DUV-exposed regions of the chemically amplified resist selectively increases the temperature of the DUV-exposed regions, while maintaining the temperature in the DUV-unexposed regions relatively low. The increased temperature initiates and accelerates acid catalyzed chemical transformation of the resist polymer in the DUV-exposed regions. The lower temperature in the DUV-unexposed regions suppresses the diffusion/migration of acid catalyst into those regions from the DUV-exposed regions.
摘要翻译：一种用于半导体器件制造的光刻工艺，其包括化学放大抗蚀剂层的基于红外辐射的后曝光烘烤（PEB），并且改善了图案化抗蚀剂层的临界尺寸控制。在化学放大型抗蚀剂的抗蚀剂曝光区域中优先吸收的波数的红外辐射的使用选择性地增加了DUV曝光区域的温度，同时保持DUV未曝光区域中的温度相对较低。升高的温度启动并加速了DUV曝光区域中抗蚀剂聚合物的酸催化化学转化。 DUV未曝光区域中的较低温度抑制了酸性催化剂从DUV暴露区域扩散/迁移到那些区域。

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