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21. 发明授权

US5569812A Nude mouse model for human neoplastic disease 失效
标题翻译：人类肿瘤性疾病的裸鼠模型
公开(公告)号：US5569812A
公开(公告)日：1996-10-29
申请号：US459730
申请日：1995-06-02
申请人： Ann Monosov , Xinyu Fu
发明人： Ann Monosov , Xinyu Fu
IPC分类号： A01K67/027 , C12N5/09 , C12N15/85 , A61K35/00 , A61K49/00
CPC分类号： A01K67/0271 , C12N5/0693
摘要： A nude mouse model for human neoplastic disease having histologically intact human neoplastic tissue transplanted onto an organ of the mouse which corresponds to the human organ from which the tissue is obtained.
摘要翻译：用于人肿瘤性疾病的裸小鼠模型，其具有移植到小鼠器官上的组织学上完整的人肿瘤组织，其对应于获得组织的人器官。

22. 发明授权

US08637410B2 Method for metal deposition using hydrogen plasma 失效
标题翻译：使用氢等离子体的金属沉积方法
公开(公告)号：US08637410B2
公开(公告)日：2014-01-28
申请号：US13082968
申请日：2011-04-08
申请人： Anantha K. Subramani , John C. Forster , Seshadri Ganguli , Michael S. Jackson , Xinliang Lu , Wei W. Wang , Xinyu Fu , Yu Lei
发明人： Anantha K. Subramani , John C. Forster , Seshadri Ganguli , Michael S. Jackson , Xinliang Lu , Wei W. Wang , Xinyu Fu , Yu Lei
IPC分类号： H01L21/31
CPC分类号： C23C16/08 , C23C16/45542 , H01L21/28079 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/76843 , H01L29/495 , H01L29/513 , H01L29/517
摘要： Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.
摘要翻译：提供了使用CVD和ALD技术形成和处理纯金属层的方法。在一个或多个实施方案中，该方法包括形成金属前体层并将金属前体层处理成氢等离子体以还原金属前体层以形成金属层。在一个或多个实施方案中，处理金属前体层包括将金属前体层暴露于高频产生的氢等离子体。还提供了防止氢等离子体渗透金属前体层的方法。

23. 发明授权

US08168543B2 Methods of forming a layer for barrier applications in an interconnect structure 有权
标题翻译：在互连结构中形成屏障应用层的方法
公开(公告)号：US08168543B2
公开(公告)日：2012-05-01
申请号：US12562607
申请日：2009-09-18
申请人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
发明人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
IPC分类号： H01L21/311
CPC分类号： H01L21/76846 , C23C14/0057 , C23C14/5853 , H01L21/2855 , H01L21/76856
摘要： Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.
摘要翻译：提供形成阻挡层的方法。在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）室中，将至少两种反应性气体和惰性气体供应到PVD室中，在存在的情况下从设置在处理室中的靶溅射源材料的由所述气体混合物形成的等离子体，并且从所述源材料在所述衬底上形成含金属的电介质层。在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。

24. 发明授权

US07615489B1 Method for forming metal interconnects and reducing metal seed layer overhang 失效
标题翻译：用于形成金属互连和还原金属种子层悬垂的方法
公开(公告)号：US07615489B1
公开(公告)日：2009-11-10
申请号：US12256243
申请日：2008-10-22
申请人： Xinyu Fu
发明人： Xinyu Fu
IPC分类号： H01L23/522
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76804 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L23/53223 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method for forming metal interconnects on a substrate is described. A substrate with a dielectric layer is positioned within a processing chamber. A first barrier layer is deposited on the dielectric layer and within a plurality of vias of the dielectric layer, wherein the first barrier layer includes beveled edges extending from a field of the substrate to a sidewall surface of each via. The first barrier layer and the dielectric layer are etched to form a recess at each beveled edge. A second barrier layer is deposited over the recess. A metal seed layer deposited over the first barrier layer, the second barrier layer, and within the recess.
摘要翻译：描述了在基板上形成金属互连的方法。具有电介质层的衬底位于处理室内。第一阻挡层沉积在电介质层上并且在电介质层的多个通孔内，其中第一阻挡层包括从衬底的场延伸到每个通孔的侧壁表面的斜边。蚀刻第一阻挡层和电介质层以在每个斜边处形成凹部。第二阻挡层沉积在凹部上。沉积在第一阻挡层，第二阻挡层和凹部内的金属籽晶层。

25. 发明申请

US20090227105A1 METHODS OF FORMING A LAYER FOR BARRIER APPLICATIONS IN AN INTERCONNECT STRUCTURE 有权
标题翻译：在互连结构中形成障碍物应用层的方法
公开(公告)号：US20090227105A1
公开(公告)日：2009-09-10
申请号：US12041804
申请日：2008-03-04
申请人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
发明人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
IPC分类号： H01L21/44 , H01L21/285
CPC分类号： H01L21/76846 , C23C14/0057 , C23C14/5853 , H01L21/2855 , H01L21/76856
摘要： Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD processing chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.
摘要翻译：提供形成阻挡层的方法。在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）腔室中，将至少两种反应性气体和惰性气体供应到PVD处理腔室中，将来自设置在处理室中的靶的源材料溅射在存在由气体混合物形成的等离子体，并且从源材料在衬底上形成含金属的电介质层。在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。

26. 发明申请

US20070190266A1 Water vapor passivation of a wall facing a plasma 有权
标题翻译：面对等离子体的水的水蒸气钝化
公开(公告)号：US20070190266A1
公开(公告)日：2007-08-16
申请号：US11351676
申请日：2006-02-10
申请人： Xinyu Fu
发明人： Xinyu Fu
IPC分类号： B08B6/00 , B08B9/00 , C23C16/00 , H05H1/24
CPC分类号： H01L21/76814 , H01L21/02063
摘要： A chamber passivation method particularly useful for hydrogen plasma cleaning of low-k dielectrics prior to coating a barrier layer into a via hole with hydrogen radicals are provided from a remote plasma source. For each wafer, the chamber is passivated with water vapor (or other gas even more chemabsorbed on plasma facing walls) passed through the remote plasma source prior to the ignition of the hydrogen plasma. The water vapor is absorbed on walls, such as alumina and quartz parts of the remote plasma source, and forms a protective mono-layer that endures sufficiently long to protect the walls during the generation of the hydrogen plasma. Thereby, the plasma facing walls, particularly of a dielectric such as alumina, are protected from etching.
摘要翻译：从远程等离子体源提供在将阻挡层涂覆到具有氢自由基的通孔中之前特别可用于低k电介质的氢等离子体清洗的室钝化方法。对于每个晶片，在氢等离子体点燃之前，通过远程等离子体源的水蒸气（或者在面向等离子体的壁上更多化学吸附的其它气体）钝化室。水蒸汽被吸收在诸如远距离等离子体源的氧化铝和石英部分的壁上，并且形成足够长的保护单层，以在氢等离子体的产生期间保护壁。因此，保护等离子体面对的壁，特别是电介质如氧化铝，防止蚀刻。

27. 发明授权

US5491284A Nude mouse model for neoplastic disease 失效
标题翻译：裸鼠模型为肿瘤性疾病
公开(公告)号：US5491284A
公开(公告)日：1996-02-13
申请号：US169735
申请日：1993-12-17
申请人： Ann Monosov , Xinyu Fu
发明人： Ann Monosov , Xinyu Fu
IPC分类号： A01K67/027 , C12N5/09 , C12N15/85 , A61K35/00 , A61K49/00
CPC分类号： A01K67/0271 , C12N5/0693
摘要： A nude mouse model for human neoplastic disease having histologically intact human neoplastic tissue transplanted onto an organ of the mouse which corresponds to the human organ from which the tissue is obtained.
摘要翻译：用于人肿瘤性疾病的裸小鼠模型，其具有移植到小鼠器官上的组织学上完整的人肿瘤组织，其对应于获得组织的人器官。

28. 发明授权

US09834840B2 Process kit shield for improved particle reduction 有权
公开(公告)号：US09834840B2
公开(公告)日：2017-12-05
申请号：US13106392
申请日：2011-05-12
申请人： Muhammad Rasheed , Rongjun Wang , Zhendong Liu , Xinyu Fu , Xianmin Tang
发明人： Muhammad Rasheed , Rongjun Wang , Zhendong Liu , Xinyu Fu , Xianmin Tang
IPC分类号： C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34
CPC分类号： C23C14/35 , C23C14/564 , H01J37/32853 , H01J37/32871 , H01J37/34 , H01J37/3411
摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

29. 发明授权

US08871064B2 Electromagnet array in a sputter reactor 有权
标题翻译：溅射反应器中的电磁体阵列
公开(公告)号：US08871064B2
公开(公告)日：2014-10-28
申请号：US12695643
申请日：2010-01-28
申请人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
发明人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
IPC分类号： C23C14/34 , H01J37/32 , C23C14/35 , C23C14/04 , H01L21/768 , H01J37/34 , C23C14/16 , H01L21/285 , C23F4/00 , C23C14/06
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
摘要翻译：在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间等离子体。首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。以更高的晶片偏压进行氩蚀刻。应用闪光步骤，降低目标功率和晶片偏置。

30. 发明授权

US08455352B1 Method for removing native oxide and associated residue from a substrate 失效
公开(公告)号：US08455352B1
公开(公告)日：2013-06-04
申请号：US13480091
申请日：2012-05-24
申请人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
发明人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , H01J37/32082 , H01L21/02057 , H01L21/0206 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/743 , H01L21/768
摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

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