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21. 发明申请

US20050056210A1 Heterojunction tunneling diodes and process for fabricating same 有权
标题翻译：异质结隧道二极管及其制造方法
公开(公告)号：US20050056210A1
公开(公告)日：2005-03-17
申请号：US10911624
申请日：2004-08-05
申请人： Nada El-Zein , Jamal Ramdani , Kurt Eisenbeiser , Ravindranath Droopad
发明人： Nada El-Zein , Jamal Ramdani , Kurt Eisenbeiser , Ravindranath Droopad
IPC分类号： H01L21/20 , H01L21/8258 , H01L27/06 , H01L29/88 , C30B1/00 , C30B3/00 , C30B5/00 , C30B23/00 , C30B25/00 , C30B28/02 , C30B28/12 , C30B28/14
CPC分类号： H01L29/882 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02505 , H01L21/02521 , H01L21/8258 , H01L27/0605
摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
摘要翻译：通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

22. 发明授权

US06590236B1 Semiconductor structure for use with high-frequency signals 失效
标题翻译：用于高频信号的半导体结构
公开(公告)号：US06590236B1
公开(公告)日：2003-07-08
申请号：US09624296
申请日：2000-07-24
申请人： Nada El-Zein , Jamal Ramdani , Kurt Eisenbeiser , Ravindranath Droopad
发明人： Nada El-Zein , Jamal Ramdani , Kurt Eisenbeiser , Ravindranath Droopad
IPC分类号： H01L310328
CPC分类号： H01L21/31691 , C30B25/18 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02505 , H01L21/02521 , Y10S438/90 , Y10S438/933
摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. These semiconductor materials have applications involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems, and automotive navigation systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges for automobiles.
摘要翻译：通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。这些半导体材料具有涉及与高频信号通信的应用，包括诸如汽车雷达系统，智能巡航控制系统，防撞系统和汽车导航系统之类的智能交通系统; 以及使用微波或RF信号的电子支付系统，例如用于包括火车票价的各种交通系统的电子费用付费，以及用于汽车的收费公路，停车场和收费桥。

23. 发明授权

US06583034B2 Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure 失效
公开(公告)号：US06583034B2
公开(公告)日：2003-06-24
申请号：US09740219
申请日：2000-12-18
申请人： Jamal Ramdani , Lyndee L. Hilt
发明人： Jamal Ramdani , Lyndee L. Hilt
IPC分类号： H01L2120
CPC分类号： H01L21/02381 , H01L21/0237 , H01L21/02439 , H01L21/02447 , H01L21/0245 , H01L21/02458 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/02513 , H01L21/02521 , H01L21/02538 , H01L21/0254 , H01L21/02546 , Y10T29/41
摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer, in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

24. 发明授权

US06501121B1 Semiconductor structure 失效
标题翻译：半导体结构
公开(公告)号：US06501121B1
公开(公告)日：2002-12-31
申请号：US09712875
申请日：2000-11-15
申请人： Zhiyi Yu , Jamal Ramdani , Ravindranath Droopad
发明人： Zhiyi Yu , Jamal Ramdani , Ravindranath Droopad
IPC分类号： H01L2976
CPC分类号： H01L21/28194 , C30B25/18 , C30B25/20 , H01L21/31691 , H01L29/513 , H01L29/517
摘要： A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate and an insulating layer formed of an epitaxially grown oxide such as (A)y(TixM1-x)1-yO3, wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density.
摘要翻译：用于形成高介电常数器件结构的结构和方法包括单晶半导体衬底和由诸如（A）y（TixM1-x）1-yO3等外延生长氧化物形成的绝缘层，其中A是碱土金属或碱土金属和M的组合是金属或半金属元素。根据本发明形成的半导体器件表现出低的漏电流密度。

25. 发明授权

US06356571B1 Semiconductor laser device and method of manufacture 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06356571B1
公开(公告)日：2002-03-12
申请号：US09641003
申请日：2000-08-17
申请人： Philip Anthony Kiely , Paul Robert Claisse , Jamal Ramdani
发明人： Philip Anthony Kiely , Paul Robert Claisse , Jamal Ramdani
IPC分类号： H01B500
CPC分类号： H01S5/18308 , H01S5/18341 , H01S5/18369
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) (10) and a method for manufacturing the VCSEL (10). The VCSEL (10) includes a ridge structure (34), a first confinement layer (36) disposed adjacent to a portion of the ridge structure (34), and a second confinement layer (37) disposed on the first confinement layer (36) and disposed adjacent to a portion of the ridge structure (32). Carriers injected into the ridge structure (34) are confined by the first confinement layer (36).
摘要翻译：垂直腔面发射激光器（VCSEL）（10）和VCSEL（10）的制造方法。 VCSEL（10）包括脊结构（34），与脊结构（34）的一部分相邻设置的第一限制层（36）和设置在第一限制层（36）上的第二限制层（37）并且邻近所述脊结构（32）的一部分设置。注入到脊结构（34）中的载体被第一限制层（36）限制。

26. 发明授权

US5943357A Long wavelength vertical cavity surface emitting laser with photodetector for automatic power control and method of fabrication 失效
标题翻译：长波长垂直腔表面发射激光器，具有用于自动功率控制的光电检测器和制造方法
公开(公告)号：US5943357A
公开(公告)日：1999-08-24
申请号：US912605
申请日：1997-08-18
申请人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
发明人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
IPC分类号： H01S5/026 , H01S5/183 , H01S5/323 , H01S3/19 , H01L21/20 , H01S3/08
CPC分类号： H01S5/0264 , B82Y20/00 , H01S5/183 , H01S5/3202 , H01S5/32366 , H01S5/34306
摘要： A long wavelength VCSEL with a photodetector, wherein the VCSEL includes a first and second stack of DBRs disposed on a first surface of a first substrate element, having an active region sandwiched therebetween, and a PIN photodetector including a first doped region disposed on a second substrate element, a undoped region disposed on the first doped region, and a second doped region disposed on the undoped region. The PIN photodetector is mounted to an opposed surface of the first substrate element, thereby monitoring a back VCSEL emission. The device is fabricated to allow for automatic power control (APC) of the VCSEL.
摘要翻译：一种具有光电检测器的长波长VCSEL，其中所述VCSEL包括布置在第一衬底元件的第一表面上的第一和第二堆叠DBR，所述第一和第二叠层的DBR具有夹在其间的有源区和PIN光检测器，所述PIN光检测器包括设置在第二衬底元件上的第一掺杂区域衬底元件，设置在第一掺杂区域上的未掺杂区域，以及设置在未掺杂区域上的第二掺杂区域。 PIN光检测器安装在第一衬底元件的相对表面上，从而监测反向VCSEL发射。该器件被制造成允许VCSEL的自动功率控制（APC）。

27. 发明授权

US5832017A Reliable near IR VCSEL 失效
标题翻译：靠近IR VCSEL可靠
公开(公告)号：US5832017A
公开(公告)日：1998-11-03
申请号：US616419
申请日：1996-03-15
申请人： Jamal Ramdani , Wenbin Jiang , Paul Claisse
发明人： Jamal Ramdani , Wenbin Jiang , Paul Claisse
IPC分类号： H01S5/183 , H01S3/19 , H01L21/20
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/3434
摘要： A near IR VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of active layers of GaInAsP having barrier layers of GaAlAs sandwiched therebetween.
摘要翻译：近红外VCSEL，包括位于基板上的反射镜堆叠，由多对相对较高和较低的折射率层组成，第二反射镜叠层由多对相对较高和较低的折射率折射率层组成，主动区域夹在第一堆叠和第二堆叠之间，有源区域由具有夹在其间的GaAlAs阻挡层的GaInAsP的有源层形成。

28. 发明授权

US5741724A Method of growing gallium nitride on a spinel substrate 失效
标题翻译：在尖晶石衬底上生长氮化镓的方法
公开(公告)号：US5741724A
公开(公告)日：1998-04-21
申请号：US774819
申请日：1996-12-27
申请人： Jamal Ramdani , Michael S. Lebby , Paige M. Holm
发明人： Jamal Ramdani , Michael S. Lebby , Paige M. Holm
IPC分类号： C30B29/38 , H01L21/20 , H01L21/203 , H01L21/205 , H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , Y10S438/967
摘要： A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.
摘要翻译：一种通过提供具有表面的支撑衬底在尖晶石衬底上生长氮化镓的方法，并且在支撑衬底的表面上设置多个缓冲层。多个缓冲层包括与尖晶石衬底失配百分比低的氮氧化铝的第一缓冲层。第二缓冲层设置在第一缓冲层上，并且包括具有低位错密度的多层梯度的氮氧化铝。氮化铝的第三缓冲层设置在第二缓冲层上。氮化镓的第四缓冲层设置在第三缓冲层上。随后，在第四缓冲层上制造诸如激光，LED或检测器之类的光子器件结构，诸如场效应晶体管或调制掺杂场效应晶体管的电子器件结构或光波导。

29. 发明授权

US5638392A Short wavelength VCSEL 失效
标题翻译：短波长VCSEL
公开(公告)号：US5638392A
公开(公告)日：1997-06-10
申请号：US441270
申请日：1995-05-15
申请人： Jamal Ramdani , Michael S. Lebby , Piotr Grodzinski
发明人： Jamal Ramdani , Michael S. Lebby , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/02 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/0211 , H01S5/0212 , H01S5/3201 , H01S5/32333 , H01S5/34326
摘要： A short wavelength vertical cavity surface emitting laser (101) is provided. A substrate (102) having a surface (103), wherein the substrate (102) includes gallium arsenide phosphide is formed. A first stack of mirrors (106) overlying the first surface (103) of the substrate (102) is formed. A first cladding region (107) is formed overlying the first stack of mirrors (106). An active region (108) is formed overlying the first cladding region (107). A second cladding region (109) is formed overlying the active region (108). A second stack of mirrors (110) is formed overlying the second cladding region (109). A contact region (126) is formed overlying the second stack of mirrors (110).
摘要翻译：提供了一种短波长垂直腔面发射激光器（101）。具有表面（103）的基板（102），其中形成基板（102）包括砷化镓磷化物。形成覆盖衬底（102）的第一表面（103）的第一叠反射镜（106）。第一包层区域（107）形成在第一反射镜叠层（106）上。在第一包层区（107）上形成有源区（108）。第二包层区域（109）形成在有源区域（108）上。在第二包层区域（109）上形成第二层反射镜（110）。接触区域（126）形成在第二反射镜叠层（110）上。

30. 发明授权

US5633886A Short wavelength VCSEL with Al-free active region 失效
标题翻译：具有无Al活性区域的短波长VCSEL
公开(公告)号：US5633886A
公开(公告)日：1997-05-27
申请号：US520061
申请日：1995-08-28
申请人： Jamal Ramdani , Michael S. Lebby , Hsing-Chung Lee
发明人： Jamal Ramdani , Michael S. Lebby , Hsing-Chung Lee
IPC分类号： H01S5/00 , H01S5/183 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3406 , H01S5/34326 , H01S5/3434
摘要： A short wavelength VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of quantum well layers of GaAsP having barrier layers of GaInP sandwiched therebetween, the quantum well and barrier layers having substantially equal and opposite lattice mismatch.
摘要翻译：一种短波长VCSEL，其包括位于基板上的反射镜堆叠，由多对相对较高和较低的折射率折射率层组成，第二反射镜叠层由多对相对较高和较低的折射率折射率层组成，区域夹在第一堆叠和第二堆叠之间，有源区域由GaAsP的量子阱层形成，其中GaInP的阻挡层夹在其间，量子阱和势垒层具有基本相等且相反的晶格失配。

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