专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

WO2010020077A1 METHOD FOR FABRICATING INGAAIN LIGHT-EMITTING DEVICE ON A COMBINED SUBSTRATE 审中-公开
标题翻译：在组合衬底上制造激光发光器件的方法
公开(公告)号：WO2010020077A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001510
申请日：2008-08-22
申请人： LATTICE POWER (JIANGXI) CORPORATION , XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , ZHANG, Shaohua , WANG, Guping , WANG, Guangxu
发明人： XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , ZHANG, Shaohua , WANG, Guping , WANG, Guangxu
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02439 , H01L21/02505 , H01L21/0254 , H01L33/0079 , H01L33/0095 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.
摘要翻译：本发明的一个实施例提供一种制造InGaAlN发光半导体结构的方法。在制造过程中，至少一个单晶牺牲层沉积在基底表面上以形成组合衬底，其中单晶牺牲层与InGaAlN晶格匹配，其中单晶层形成牺牲层。接下来，在组合衬底上制造InGaAlN发光半导体结构。然后将在组合衬底上制造的InGaAlN结构转移到支撑衬底，从而有助于垂直电极配置。转移InGaAlN结构包括用化学蚀刻剂蚀刻单晶牺牲层。此外，InGaAlN和基底对化学蚀刻剂具有耐受性。在传输InGaAlN结构后，可以重新使用基底。

22. 发明申请

WO2010020069A1 METHOD FOR FABRICATING InGaAlN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE 审中-公开
标题翻译：用金属基材制造InGaAlN发光二极管的方法
公开(公告)号：WO2010020069A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001493
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , FANG, Wenqing , WANG, Guping , ZHANG, Shaohua
发明人： XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , FANG, Wenqing , WANG, Guping , ZHANG, Shaohua
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/382 , H01L33/44
摘要： One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.
摘要翻译：本发明的一个实施例提供一种制造发光二极管的方法。该方法包括在生长衬底上蚀刻凹槽，从而在生长衬底上形成台面。该方法还包括在每个台面上制造包含p型层，多量子阱层和n型层的铟镓铝氮化物（InGaAlN）多层结构。此外，该方法包括在InGaAlN多层结构的顶部上沉积一个或多个金属衬底层。此外，该方法包括去除生长衬底。此外，该方法包括在InGaAlN多层结构的两侧形成电极，从而形成垂直电极结构。

23. 发明申请

WO2010020067A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER 审中-公开
标题翻译：具有钝化层的半导体发光器件
公开(公告)号：WO2010020067A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001491
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , LIU, Junlin , WANG, Li
发明人： JIANG, Fengyi , LIU, Junlin , WANG, Li
IPC分类号： H01L33/12
CPC分类号： H01L33/44 , H01L33/0079
摘要： A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layers. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer.
摘要翻译：一种发光装置及其制造方法。该器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂半导体层上方的第二掺杂半导体层以及位于第一和第二掺杂半导体层之间的多量子阱（MQW）。该器件还包括耦合到第一掺杂半导体层的第一电极和耦合到第二掺杂半导体层的第二电极。该器件还包括第一钝化层，其基本上覆盖第一和第二掺杂半导体层的侧壁，MQW有源层以及第二掺杂半导体层的未被第二电极覆盖的部分水平表面。第一钝化层通过氧化技术形成。该器件还包括覆盖第一钝化层的第二钝化层。

24. 发明申请

WO2010020066A1 METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION 审中-公开
标题翻译：用于制造具有双面钝化的半导体发光器件的方法
公开(公告)号：WO2010020066A1
公开(公告)日：2010-02-25
申请号：PCT/CN2008/001490
申请日：2008-08-19
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , WANG, Li
发明人： JIANG, Fengyi , WANG, Li
IPC分类号： H01L33/12
CPC分类号： H01L33/0079 , H01L33/44
摘要： A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode.
摘要翻译：一种制造半导体发光器件的方法包括在第一衬底上制造多层半导体结构，其中所述多层半导体结构包括第一掺杂半导体层，MQW有源层，第二掺杂半导体层和第一钝化层。该方法还包括图案化和蚀刻第一钝化层的一部分以暴露第一掺杂半导体层。然后形成第一电极，其耦合到第一掺杂半导体层。接着，将多层结构体接合到第二基板上; 并且去除第一衬底。形成第二电极，其耦合到第二掺杂半导体层。此外，形成第二钝化层，其基本上覆盖多层结构的侧壁和第二掺杂半导体层的未被第二电极覆盖的部分表面。

25. 发明申请

WO2009000144A1 METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE 审中-公开
标题翻译：制造P型半导体结构的方法
公开(公告)号：WO2009000144A1
公开(公告)日：2008-12-31
申请号：PCT/CN2008/000972
申请日：2008-05-20
申请人： LATTICE POWER (JIANGXI) CORPORATION , JIANG, Fengyi , WANG, Li , FANG, Wenqing , MO, Chunlan
发明人： JIANG, Fengyi , WANG, Li , FANG, Wenqing , MO, Chunlan
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/325
摘要： A method for fabricating a group III-V p-type nitride structure.The method comprises growing a first layer of p-type group III-V material (204,301) with a first acceptor density in a first growing environment.The method further comprises growing a second layer of p-type group III-V material (205,302),which is thicker than the first layer (204,301) and which has a second acceptor density,on top of the first layer (204,301) in a second growing environment.In addition,the method comprises growing a third layer of p-type group III-V material (206,303),which is thinner than the second layer (205,302) and which has a third acceptor density,on top of the second layer (205,302) in a third growing enviroment. The invention further provides a LED which is fabricated by the said-above method.
摘要翻译：一种制造III-V族p型氮化物结构的方法，该方法包括在第一生长环境中以第一受体密度生长第一层p型III-V族材料（204,301）。该方法还包括生长在第二生长环境中，在第一层（204,301）的顶部上具有比第一层（204,301）厚且具有第二受主密度的第二层p型III-V族材料（205,302）。此外，该方法包括在第二层（205,302）的顶部上生长比第二层（205,302）薄且具有第三受体密度的第三层p型III-V族材料（206,303）第三个增长的环境。本发明还提供一种通过上述方法制造的LED。

26. 发明申请

WO2008134929A1 INGAALN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译：含有碳基底板的发光装置及其制造方法
公开(公告)号：WO2008134929A1
公开(公告)日：2008-11-13
申请号：PCT/CN2008/000856
申请日：2008-04-28
申请人： LATTICE POWER (JIANGXI) CORPORATION , XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , TANG, Yingwen , ZHENG, Changda , LIU, Junlin , LIU, Weihua , WANG, Guping
发明人： XIONG, Chuanbing , JIANG, Fengyi , WANG, Li , TANG, Yingwen , ZHENG, Changda , LIU, Junlin , LIU, Weihua , WANG, Guping
IPC分类号： H01L33/00
CPC分类号： H01L33/641 , H01L33/0079 , H01L33/32
摘要： An InGaAlN-based semiconductor light-emitting device comprises an InGaAlN-based semiconductor multilayer structure (621) and a carbon-based substrate (622) which supports the InGaAlN-based semiconductor multilayer structure (621),wherein the carbon-based substrate (622) comprises at least one carbon-based layer (101,601,201,301,517,519). This carbon-based substrate (622) has both high conductivity and low electrical resistivity.
摘要翻译：基于InGaAlN的半导体发光器件包括InGaAlN基半导体多层结构（621）和支撑InGaAlN基半导体多层结构（621）的碳基衬底（622），其中碳基衬底（622））包含至少一个碳基层（101,601,201,301,517,519）。该碳基基板（622）具有高导电性和低电阻率。

27. 发明申请

WO2008011288A2 HYDROCRACKING CATALYST CONTAINING BETA AND Y ZEOLITES, AND PROCESS FOR ITS USE TO MAKE DISTILLATE 审中-公开
标题翻译：含有BETA和Y沸石的水解催化剂及其用于蒸馏的方法
公开(公告)号：WO2008011288A2
公开(公告)日：2008-01-24
申请号：PCT/US2007/073031
申请日：2007-07-09
申请人： UOP LLC , WANG, Li
发明人： WANG, Li
IPC分类号： C10G45/04
CPC分类号： C10G47/12
摘要： Increased selectivity of middle distillate and/or increased catalyst activity are obtained in a hydrocracking process by the use of a catalyst containing a beta zeolite and a Y zeolite having a unit cell size of from 24.25 to 24.32 angstrom. The catalyst may also contain an additional Y zeolite having a unit cell size of from 24.33 to 24.38 angstrom.
摘要翻译：通过使用含有β沸石的催化剂和具有24.25至24.32埃的晶胞尺寸的Y沸石，在加氢裂化方法中获得了中间馏分的选择性提高和/或增加的催化剂活性。催化剂还可以含有单位晶胞尺寸为24.33至24.38埃的另外的Y沸石。

28. 发明申请

WO2007079343A2 CLOSED LOOP OPTIMIZATION OF A-V AND V-V TIMING 审中-公开
标题翻译：闭环优化A-V和V-V时序
公开(公告)号：WO2007079343A2
公开(公告)日：2007-07-12
申请号：PCT/US2006/062098
申请日：2006-12-14
申请人： MEDTRONIC, INC. , WANG, Li
发明人： WANG, Li
CPC分类号： A61N1/3756 , A61B5/0452 , A61B5/0472 , A61N1/362 , A61N1/3627 , A61N1/365 , A61N1/3682 , A61N1/3684
摘要： Embodiments of close loop optimization of atrioventricular (A-V) delay interval and/or inter-ventricular (V-V) timing are disclosed. An implantable medical device includes a . housing that supports a processing means adapted for implantation in a patient, There can be two or more electrodes electrically coupled to the processing means where the two or more electrodes can be used for sensing a patient's cardiac signals, which include a far-field EGM. The processing means can determine a width of a P-wave from the sensed far-field EGM Also included can be a means for delivering an adapted cardiac pacing therapy based upon the width of the P-wave, including revised A-V delay and/or V-V temporal intervals.
摘要翻译：公开了房室（A-V）延迟间隔和/或心室间（V-V）定时的闭环优化的实施例。可植入医疗装置包括a。支撑适于植入患者的处理装置的外壳。可以有两个或多个电极电耦合到处理装置，其中两个或更多个电极可用于感测患者的心脏信号，其包括远场EGM。处理装置可以从所感测的远场EGM确定P波的宽度。还包括可以基于P波的宽度（包括修正的AV延迟和/或VV）来递送适应的心脏起搏治疗的装置时间间隔。

29. 发明申请

WO2006034372A1 METHOD AND APPARATUS FOR FACILITATING PATIENT ALERT IN IMPLANTABLE DEVICES 审中-公开
标题翻译：用于在可植入装置中促进患者提示的方法和装置
公开(公告)号：WO2006034372A1
公开(公告)日：2006-03-30
申请号：PCT/US2005/033887
申请日：2005-09-21
申请人： MEDTRONIC, INC. , WANG, Li
发明人： WANG, Li
IPC分类号： A61B5/00 , A61N1/372
CPC分类号： A61N1/37258 , A61B5/0031 , G16H40/67
摘要： An implantable medical device system capable of generating a patient alert message for display on an external patient communicator is provided. The patient alert message notifies the patient that a patient alert condition has been detected; indicates what type of alert condition was detected, and instructs the patient regarding what action should be taken. The patient alert message may additionally provide an indication of the severity of the patient alert condition. The IMD system includes an IMD capable of sensing signals for detecting multiple patient alert conditions and generating a patient alert signal. The IMD system further includes an external patient communicator capable of receiving patient alert data from the IMD. Upon receipt of the patient alert data, the patient communicator displays a patient alert message including patient instructions which typically indicate appropriate medical personnel contact information.
摘要翻译：提供了能够产生用于在外部患者通信器上显示的患者警报消息的可植入医疗装置系统。患者警报消息通知患者已经检测到病人警报状况; 指示检测到什么类型的警报状况，并指示患者应采取什么行动。患者警报消息可另外提供患者警报状况的严重性的指示。 IMD系统包括能够感测用于检测多个患者警报状况并产生患者警报信号的信号的IMD。 IMD系统还包括能够从IMD接收患者警报数据的外部患者通信器。在接收到患者警报数据之后，患者通信器显示病人警报消息，其包括通常指示适当的医疗人员联系信息的患者指令。

30. 发明申请

WO2005056109A1 METHOD AND APPARATUS FOR IDENTIFYING LEAD-RELATED CONDITIONS USING IMPEDANCE TRENDS AND OVERSENSING CRITERIA 审中-公开
标题翻译：使用阻碍趋势和过敏标准识别与铅相关的条件的方法和装置
公开(公告)号：WO2005056109A1
公开(公告)日：2005-06-23
申请号：PCT/US2004/040238
申请日：2004-12-01
申请人： MEDTRONIC, INC. , WANG, Li , GUNDERSON, Bruce, D. , PATEL, Amisha Somabhai
发明人： WANG, Li , GUNDERSON, Bruce, D. , PATEL, Amisha Somabhai
IPC分类号： A61N1/37
CPC分类号： A61N1/3706 , A61N2001/083
摘要： A method and apparatus for detecting a lead-related condition that includes determining whether a first oversensing criteria is satisfied, determining whether a second oversensing criteria is satisfied, determining whether an impedance criteria has been satisfied, and generating an alert in response to more than one of the first oversensing criteria, the second over sensing criteria and the impedance criteria being satisfied.
摘要翻译：一种用于检测引线相关状况的方法和装置，包括确定是否满足第一过度标准，确定是否满足第二过度标准，确定是否已经满足阻抗标准，以及响应于多于一个产生警报的第一超检标准，第二过度感测标准和阻抗标准得到满足。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式