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21. 发明申请

US20060064193A1 Iso/nested cascading trim control with model feedback updates 有权
标题翻译： Iso /嵌套级联调整控制与模型反馈更新
公开(公告)号：US20060064193A1
公开(公告)日：2006-03-23
申请号：US10944463
申请日：2004-09-20
申请人： Asao Yamashita , Merritt Funk , Daniel Prager
发明人： Asao Yamashita , Merritt Funk , Daniel Prager
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L21/32139 , H01L2924/0002 , H01L2924/00
摘要： This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.
摘要翻译：该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。

22. 发明申请

US20060015206A1 Formula-based run-to-run control 有权
标题翻译：基于公式的运行控制
公开(公告)号：US20060015206A1
公开(公告)日：2006-01-19
申请号：US10890410
申请日：2004-07-14
申请人： Merritt Funk , Kevin Pinto , Asao Yamashita , Wesley Natzle
发明人： Merritt Funk , Kevin Pinto , Asao Yamashita , Wesley Natzle
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L21/67248 , H01L21/67253 , H01L2924/0002 , H01L2924/00
摘要： A dual chamber apparatus including a first chamber and a second chamber which is configured to be coupled to the first chamber at an interface. Each of the first chamber and the second chamber has a transfer opening located at the interface. An insulating plate is located on one of the first chamber and the second chamber at the interface and is configured to have a low thermal conductivity such that the first chamber and the second chamber can be independently controlled at different temperatures when the first chamber and the second chamber are coupled together. Additionally, the apparatus may include an alignment device and/or a fastening device for fastening the first chamber to the second chamber. In embodiments, the insulating plate may be constructed of Teflon. Further, the first chamber may be a chemical oxide removal treatment chamber and the second chamber may be a heat treatment chamber.
摘要翻译：一种双室装置，包括第一室和第二室，其构造成在界面处联接到第一室。第一室和第二室中的每个具有位于界面处的传送开口。绝缘板位于界面处的第一室和第二室中的一个上，并被构造成具有低导热性，使得当第一室和第二室可以在不同的温度下独立地控制第一室和第二室腔室耦合在一起。另外，该装置可以包括用于将第一室紧固到第二室的对准装置和/或紧固装置。在实施例中，绝缘板可以由特氟隆构成。此外，第一室可以是化学除氧处理室，第二室可以是热处理室。

23. 发明授权

US08501628B2 Differential metal gate etching process 有权
标题翻译：差分金属栅极蚀刻工艺
公开(公告)号：US08501628B2
公开(公告)日：2013-08-06
申请号：US12729538
申请日：2010-03-23
申请人： Vinh Hoang Luong , Hiroyuki Takahashi , Akiteru Ko , Asao Yamashita , Vaidya Bharadwaj , Takashi Enomoto , Daniel J. Prager
发明人： Vinh Hoang Luong , Hiroyuki Takahashi , Akiteru Ko , Asao Yamashita , Vaidya Bharadwaj , Takashi Enomoto , Daniel J. Prager
IPC分类号： H01L21/302
CPC分类号： H01L21/32136 , H01J37/32091 , H01J37/32165 , H01J37/3266 , H01L21/823437 , H01L21/823456
摘要： A method for etching a differential metal gate structure on a substrate is described. The differential metal gate structure includes a metal gate layer overlying a high dielectric constant (high-k) dielectric layer, wherein the metal gate layer comprises a different thickness at different regions on the substrate. The metal gate layer is patterned by using a plasma etching process, wherein at least one etch step includes forming plasma using a halogen-containing gas and at least one etch step includes forming plasma using an additive gas having as atomic constituents C, H, and F.
摘要翻译：描述了蚀刻基板上的差分金属栅极结构的方法。差分金属栅极结构包括覆盖高介电常数（高k）电介质层的金属栅极层，其中金属栅极层在衬底上的不同区域包括不同的厚度。通过使用等离子体蚀刻工艺对金属栅极层进行构图，其中至少一个蚀刻步骤包括使用含卤素气体形成等离子体，并且至少一个蚀刻步骤包括使用具有原子成分C，H和 F。

24. 发明授权

US07894927B2 Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models for metal-gate structures 有权
标题翻译：使用金属栅结构的多层/多输入/多输出（MLMIMO）模型
公开(公告)号：US07894927B2
公开(公告)日：2011-02-22
申请号：US12186619
申请日：2008-08-06
申请人： Merritt Funk , Radha Sundararajan , Asao Yamashita , Daniel Prager , Hyung Joo Lee
发明人： Merritt Funk , Radha Sundararajan , Asao Yamashita , Daniel Prager , Hyung Joo Lee
IPC分类号： G06F19/00 , G06F17/50 , G06F7/60 , G06F1/00
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要翻译：本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚蚀刻（PE）序列，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多个层和/或多个过程步骤之间的动态交互行为建模。多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

25. 发明授权

US07763404B2 Methods and apparatus for changing the optical properties of resists 失效
标题翻译：改变抗蚀剂光学性能的方法和装置
公开(公告)号：US07763404B2
公开(公告)日：2010-07-27
申请号：US11535247
申请日：2006-09-26
申请人： James E. Willis , Manuel Perez , Asao Yamashita
发明人： James E. Willis , Manuel Perez , Asao Yamashita
IPC分类号： G03F9/00
CPC分类号： G03B27/42 , G01N21/4788 , G01N21/956 , G01N2021/95615 , G03F7/40
摘要： The present invention provides methods and system for improving the accuracy of measurements made using optical metrology. The present invention relates to methods and systems for changing the optical properties of tunable resists that can be used in the production of electronic devices such as integrated circuits. Further, the invention provides methods and systems for using a modifiable resist layer that provides a first set of optical properties before exposure and a second set of optical properties after exposure.
摘要翻译：本发明提供了使用光学测量提高测量精度的方法和系统。本发明涉及用于改变可用于生产诸如集成电路的电子器件的可调谐抗蚀剂的光学性质的方法和系统。此外，本发明提供了用于使用在曝光之前提供第一组光学特性并且在曝光后提供第二组光学性质的可修改抗蚀剂层的方法和系统。

26. 发明申请

US20100036518A1 Using Multi-Layer/Multi-Input/Multi-Output (MLMIMO) Models for Metal-Gate Structures 有权
标题翻译：使用金属门结构的多层/多输入/多输出（MLMIMO）模型
公开(公告)号：US20100036518A1
公开(公告)日：2010-02-11
申请号：US12186619
申请日：2008-08-06
申请人： Merritt Funk , Radha Sundararajan , Asao Yamashita , Daniel Prager , Hyung Joo Lee
发明人： Merritt Funk , Radha Sundararajan , Asao Yamashita , Daniel Prager , Hyung Joo Lee
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要翻译：本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚 - 蚀刻（PE）序列，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多层和/或多个过程步骤之间的动态交互行为建模。多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

27. 发明授权

US07527016B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07527016B2
公开(公告)日：2009-05-05
申请号：US10615915
申请日：2003-07-10
申请人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , Dongsheng Zhang , Michiko Nakaya , Norikazu Murakami
发明人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , Dongsheng Zhang , Michiko Nakaya , Norikazu Murakami
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/321
摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
摘要翻译：通过使用等离子体在目标衬底上执行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。提供RF功率的RF电源通过匹配电路连接到第一或第二电极。匹配电路自动执行相对于RF功率的输入阻抗匹配。可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

28. 发明申请

US20080076045A1 METHODS AND APPARATUS FOR CHANGING THE OPTICAL PROPERTIES OF RESISTS 失效
标题翻译：改变电阻率的光学性质的方法和装置
公开(公告)号：US20080076045A1
公开(公告)日：2008-03-27
申请号：US11535247
申请日：2006-09-26
申请人： James E. Willis , Manuel Perez , Asao Yamashita
发明人： James E. Willis , Manuel Perez , Asao Yamashita
IPC分类号： G03B27/00 , G03C5/00 , G03B27/42
CPC分类号： G03B27/42 , G01N21/4788 , G01N21/956 , G01N2021/95615 , G03F7/40
摘要： The present invention provides methods and system for improving the accuracy of measurements made using optical metrology. The present invention relates to methods and systems for changing the optical properties of tunable resists that can be used in the production of electronic devices such as integrated circuits. Further, the invention provides methods and systems for using a modifiable resist layer that provides a first set of optical properties before exposure and a second set of optical properties after exposure.
摘要翻译：本发明提供了使用光学测量提高测量精度的方法和系统。本发明涉及用于改变可用于生产诸如集成电路的电子器件的可调谐抗蚀剂的光学性质的方法和系统。此外，本发明提供了用于使用在曝光之前提供第一组光学特性并且在曝光后提供第二组光学性质的可修改抗蚀剂层的方法和系统。

29. 发明授权

US07292906B2 Formula-based run-to-run control 有权
标题翻译：基于公式的运行控制
公开(公告)号：US07292906B2
公开(公告)日：2007-11-06
申请号：US10890410
申请日：2004-07-14
申请人： Merritt Funk , Kevin Augustine Pinto , Asao Yamashita , Wesley Natzle
发明人： Merritt Funk , Kevin Augustine Pinto , Asao Yamashita , Wesley Natzle
IPC分类号： G06F19/00 , H01L21/302
CPC分类号： H01L22/20 , H01L21/67248 , H01L21/67253 , H01L2924/0002 , H01L2924/00
摘要： A processing method of processing a substrate is presented that includes: receiving pre-process data, wherein the pre-process data comprises a desired process result and actual measured data for the substrate; determining a required process result, wherein the required process result comprises the difference between the desired process result and the actual measured data; creating a new process recipe by modifying a nominal recipe obtained from a processing tool using at least one of a static recipe and a formula model, wherein the new process recipe provides a new process result that is approximately equal to the required process result; and sending the new process recipe to the processing tool and the substrate.
摘要翻译：提出了一种处理衬底的处理方法，包括：接收预处理数据，其中预处理数据包括所需的处理结果和衬底的实际测量数据; 确定所需的处理结果，其中所需的处理结果包括期望的处理结果与实际测量数据之间的差异; 通过使用静态配方和公式模型中的至少一个修改从处理工具获得的名义配方来创建新的过程配方，其中新的过程配方提供近似等于所需过程结果的新的过程结果; 并将新的工艺配方发送到处理工具和衬底。

30. 发明申请

US20070238199A1 Method for conditioning a process chamber 有权
标题翻译：调节处理室的方法
公开(公告)号：US20070238199A1
公开(公告)日：2007-10-11
申请号：US11393674
申请日：2006-03-31
申请人： Asao Yamashita
发明人： Asao Yamashita
IPC分类号： B08B6/00 , H01L21/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/4404 , B08B7/00 , B08B9/00 , C23C16/4405 , C23C16/4407 , H01L21/3065 , H01L21/32136 , H01L21/32137
摘要： A method of conditioning a processing chamber for a production process includes performing a conditioning step at a conditioning process recipe substantially different than a process recipe of the production process, and performing a warm-up process at a warm-up process recipe substantially the same as the process recipe of the production process. The method can be performed after a wet-cleaning process has been performed. The conditioning procedure can allow the maintenance time to be decreased and can cause the etched features to be more accurate.
摘要翻译：对生产过程的处理室进行调理的方法包括在与生产过程的处理配方基本不同的调节处理配方下执行调节步骤，并且在与预热过程配方基本相同的预热过程中进行预热处理生产过程的工艺配方。该方法可以在进行湿式清洗处理之后进行。调节过程可以减少维护时间，并且可以使蚀刻特征更准确。

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