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21. 发明授权

US5457072A Process for dicing a semiconductor wafer having a plated heat sink using a temporary substrate 失效
标题翻译：使用临时基板对具有电镀散热片的半导体晶片进行切割的工序
公开(公告)号：US5457072A
公开(公告)日：1995-10-10
申请号：US196757
申请日：1994-02-15
申请人： Masahiro Tamaki , Kouji Aono , Sinichi Sakamoto
发明人： Masahiro Tamaki , Kouji Aono , Sinichi Sakamoto
IPC分类号： H01L23/36 , B81C99/00 , H01L21/304 , H01L21/78 , H01L21/302
CPC分类号： B81C1/00214 , H01L21/304 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L2221/68327 , Y10S438/977
摘要： A method for producing semiconductor chips includes preparing a semiconductor wafer having opposite front and rear surfaces and active semiconductor devices disposed in the semiconductor wafer at a part of the front surface, attaching a glass plate to the front surface of the semiconductor wafer, thinning the semiconductor wafer to a desired thickness from the rear surface, forming a first radiating layer over the rear surface of the semiconductor wafer, selectively forming a second radiating layer on the first radiating layer using, as a mask, a photoresist pattern covering portions of the first radiating layer opposite dicing regions, removing the semiconductor wafer from the glass plate, and cutting through the wafer and the first radiating layer with a dicing blade to produce a plurality of semiconductor chips. In this method, since the first radiating layer supports the thin wafer, the glass plate can be removed before the dicing process. Therefore, electrical testing of the semiconductor devices included in the wafer can be carried out before the wafer is divided into chips.
摘要翻译：一种制造半导体芯片的方法包括制备具有相对的前表面和后表面的半导体晶片和在前表面的一部分设置在半导体晶片中的有源半导体器件，将玻璃板附接到半导体晶片的前表面，使半导体从后表面到期望的厚度，在半导体晶片的后表面上形成第一辐射层，在第一辐射层上选择性地形成第二辐射层，使用覆盖第一辐射层的部分的光刻胶图案作为掩模层，相对的切割区域，从玻璃板去除半导体晶片，并用切割刀片切割晶片和第一辐射层，以产生多个半导体芯片。在该方法中，由于第一辐射层支撑薄晶片，因此可以在切割处理之前去除玻璃板。因此，在将晶片分成芯片之前，可以进行包括在晶片中的半导体器件的电气测试。

22. 发明授权

US06391770B1 Method of manufacturing semiconductor device 有权
公开(公告)号：US06391770B1
公开(公告)日：2002-05-21
申请号：US09876044
申请日：2001-06-08
申请人： Katsuya Kosaki , Masahiro Tamaki , Takao Ishida
发明人： Katsuya Kosaki , Masahiro Tamaki , Takao Ishida
IPC分类号： H01L2144
摘要： In a semiconductor device, an opening having a high aspect ratio from a back surface of a GaAs substrate and is formed by anisotropic dry etching. After an Au film is deposited on the entire back surface of the GaAs substrate, including inside of the opening, a Ni alloy is non-electrolytically plated. The Ni film can also be deposited on the inner wall and bottom of the opening. An IC substrate or FET may have the Ni film only at an area corresponding to the via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each other by AuSn solder poorly wetting the Ni film.

23. 发明授权

US06268619B1 Semiconductor device with high aspect ratio via hole including solder repelling coating 失效
标题翻译：具有高纵横比通孔的半导体器件，包括焊料排斥涂层
公开(公告)号：US06268619B1
公开(公告)日：2001-07-31
申请号：US09038090
申请日：1998-03-11
申请人： Katsuya Kosaki , Masahiro Tamaki , Takao Ishida
发明人： Katsuya Kosaki , Masahiro Tamaki , Takao Ishida
IPC分类号： H01L2980
CPC分类号： H01L21/76898 , H01L21/76838 , H01L23/481 , H01L2924/0002 , H01L2924/10158 , H01L2924/10329 , H01L2924/00
摘要： In a semiconductor device, an opening having a high aspect ratio extends from a back surface of a GaAs substrate and is formed by anisotropic dry etching. After an Au film is deposited on the entire back surface of the GaAs substrate, including inside of the opening, a Ni alloy is non-electrolytically plated. The Ni film can also be deposited on the inner wall and the bottom of the opening. An IC substrate or FET may have the Ni film only at an area corresponding to the via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each other by AuSn solder poorly wetting the Ni film.
摘要翻译：在半导体器件中，具有高纵横比的开口从GaAs衬底的背面延伸并且通过各向异性干蚀刻形成。在Au膜沉积在GaAs衬底的整个背面（包括开口内部）之后，Ni合金是非电解电镀的。 Ni膜也可以沉积在开口的内壁和底部。 IC基板或FET可以仅在对应于通孔的区域具有Ni膜。 IC基板或FET的背面和封装基板的前表面通过AuSn焊料彼此接合，使Ni膜不良润湿。

24. 发明授权

US6136668A Method of dicing semiconductor wafer 有权
标题翻译：切割半导体晶片的方法
公开(公告)号：US6136668A
公开(公告)日：2000-10-24
申请号：US169928
申请日：1998-10-09
申请人： Masahiro Tamaki , Kazuo Hayashi , Shozui Takeno
发明人： Masahiro Tamaki , Kazuo Hayashi , Shozui Takeno
IPC分类号： H01L21/301 , H01L21/304 , H01L23/58
CPC分类号： H01L21/3043
摘要： A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.
摘要翻译：制备半导体晶片，其包括在其表面上具有多个功能器件的半导体层和围绕并分离多个功能器件的分离线区域。在半导体区域的分离线区域的表面上形成金属层。在半导体晶片的表面上形成增强层。通过选择性地蚀刻半导体层的背面，形成围绕功能元件的周边的孔，穿过半导体层并从后表面到达金属层。从半导体晶片去除加强板。金属层用激光照射并熔合，以提供彼此分离的多个半导体芯片。

25. 发明授权

US5395952A Benzimidazole derivatives agricultural and horticultural fungicides containing the same as an active ingredient and intermediate compounds thereof 失效
标题翻译：苯并咪唑衍生物含有与活性成分相同的农业和园艺杀真菌剂及其中间体化合物
公开(公告)号：US5395952A
公开(公告)日：1995-03-07
申请号：US179123
申请日：1994-01-10
申请人： Masayuki Enomoto , Junya Takahashi , Tomoyuki Kusaba , Masayo Sugano , Rei Matsunaga , Masahiro Tamaki
发明人： Masayuki Enomoto , Junya Takahashi , Tomoyuki Kusaba , Masayo Sugano , Rei Matsunaga , Masahiro Tamaki
IPC分类号： A01N43/90 , C07D491/04 , C07D317/46
CPC分类号： C07D491/04 , A01N43/90
摘要： A benzimidazole derivative having the formula, ##STR1## wherein R is cyano or thiocarbamoyl; Q is lower alkyl or a group represented by the formula NQ.sup.1 Q.sup.2, in which Q.sup.1 and Q.sup.2 are independently lower alkyl, lower alkyl substituted with phenyl, lower alkenyl or lower alkynyl, or they form a lower alkylene ring when taken together at their ends which ring may include a hetero atom; X is hydrogen or halogen; and Z is a group which consists of (a) one oxygen atom or two non-adjacent oxygen atom, (b) --CF.sub.2 --group and (c) any one of a single bond, --CF.sub.2 --, --CFH--, CFCl-- and --CH.sub.2 --groups and forms a five-membered or six membered ring together with two adjacent carbon atoms of the benzene ring; is obtained by reacting a corresponding 2-cyanobenzimidazole compound and a sulfamoyl chloride derivative. The benzimidazole derivative is incorporated into agricultural and horticultural fungicides as an active ingredient.
摘要翻译：具有下式的苯并咪唑衍生物，其中R是氰基或硫代氨基甲酰基; Q是低级烷基或由式NQ1Q2表示的基团，其中Q1和Q2独立地是低级烷基，被苯基，低级链烯基或低级炔基取代的低级烷基，或者当它们的末端相互结合时，它们形成低级亚烷基环可以包括杂原子; X是氢或卤素; 和Z是由（a）一个氧原子或两个不相邻的氧原子组成的基团，（b）-CF 2 - 基团和（c）单键-CF2-，-CFH-，CFCl- 和-CH 2 - 基，并与苯环的两个相邻碳原子一起形成五元或六元环; 是通过使相应的2-氰基苯并咪唑化合物和氨磺酰氯衍生物反应得到的。苯并咪唑衍生物作为活性成分掺入农业和园艺杀真菌剂中。

26. 发明授权

US06329671B1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06329671B1
公开(公告)日：2001-12-11
申请号：US09642830
申请日：2000-08-22
申请人： Masahiro Tamaki , Kazuo Hayashi , Shozui Takeno
发明人： Masahiro Tamaki , Kazuo Hayashi , Shozui Takeno
IPC分类号： H01L2358
CPC分类号： H01L21/3043 , H01L21/78
摘要： A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.
摘要翻译：制备半导体晶片，其包括在其表面上具有多个功能器件的半导体层和围绕并分离多个功能器件的分离线区域。在半导体区域的分离线区域的表面上形成金属层。在半导体晶片的表面上形成增强层。通过选择性地蚀刻半导体层的背面，形成围绕功能元件的周边的孔，穿过半导体层并从后表面到达金属层。从半导体晶片去除加强板。金属层用激光照射并熔合，以提供彼此分离的多个半导体芯片。

27. 发明授权

US06245596B1 Method of producing semiconductor device with heat dissipation metal layer and metal projections 有权
标题翻译：制造具有散热金属层和金属突起的半导体器件的方法
公开(公告)号：US06245596B1
公开(公告)日：2001-06-12
申请号：US09427584
申请日：1999-10-27
申请人： Katsuya Kosaki , Masahiro Tamaki , Hiroshi Matsuoka
发明人： Katsuya Kosaki , Masahiro Tamaki , Hiroshi Matsuoka
IPC分类号： H01L2324
CPC分类号： H01L21/78 , H01L23/3677 , H01L2924/0002 , H01L2924/00
摘要： A method of producing a semiconductor device having a heat dissipating metal layer wherein the number of patterning steps is reduced, laser dicing produces a better profile, and first and second metal layers are prevented from separating from each other, and a semiconductor device produced by the method. The number of patterning steps is reduced by employing a flat exposure step for photoresist with mask alignment. A better appearance is obtained by forming the metal layers which connect the semiconductor devices with each other from a first metal layer having a lower melting point and a second metal layer having a higher melting point and severing the first metal layer and the second metal layer successively, from the first metal layer side. A second metal layer is prevented from peeling by preventing oxidation of the plated feeder layer through plating of the second metal layer.
摘要翻译：一种制造具有散热金属层的半导体器件的方法，其中图案化步骤的数量减少，激光切割产生更好的轮廓，并且防止第一和第二金属层彼此分离，并且制造由方法。通过对具有掩模对准的光致抗蚀剂采用平坦曝光步骤来减少图案化步骤的数量。通过形成从具有较低熔点的第一金属层和具有较高熔点的第二金属层彼此连接半导体器件的金属层，并且连续切断第一金属层和第二金属层而获得更好的外观，从第一金属层侧。通过第二金属层的镀覆防止电镀料层的氧化，防止第二金属层剥离。

28. 发明授权

US5310747A Benzimidazole derivatives, agricultural and horticultural fungicides containing the same as an active ingredient and intermediate compounds thereof 失效
标题翻译：苯并咪唑衍生物，含有与活性成分相同的农业和园艺杀真菌剂及其中间体化合物
公开(公告)号：US5310747A
公开(公告)日：1994-05-10
申请号：US894007
申请日：1992-06-02
申请人： Masayuki Enomoto , Junya Takahashi , Tomoyuki Kusaba , Masayo Sugano , Rei Matsunaga , Masahiro Tamaki
发明人： Masayuki Enomoto , Junya Takahashi , Tomoyuki Kusaba , Masayo Sugano , Rei Matsunaga , Masahiro Tamaki
IPC分类号： C07D235/24 , A01N43/12 , A01N43/30 , A01N43/52 , A01N43/90 , A01P3/00 , C07D491/04 , C07D491/048 , C07D491/056 , C07D235/02
CPC分类号： C07D491/04 , A01N43/90
摘要： A benzimidazole derivative having the formula, ##STR1## wherein R is cyano or thiocarbamoyl; Q is lower alkyl or a group represented by the formula NQ.sup.1 Q.sup.2, in which Q.sup.1 and Q.sup.2 are independently lower alkyl, lower alkyl substituted with phenyl, lower alkenyl or lower alkynyl, or they form a lower alkylene ring when taken together at their ends which ring may include a hetero atom; X is hydrogen or halogen; and Z is a group which consists of (a) one oxygen atom or two non-adjacent oxygen atom, (b) --CF.sub.2 -- group and (c) any one of a single bond, --CF.sub.2 --, --CFH--, CFCl-- and --CH.sub.2 -- groups and forms a five-membered or six membered ring together with two adjacent carbon atoms of the benzene ring; is obtained by reacting a corresponding 2-cyanobenzimidazole compound and a sulfamoyl chloride derivative. The benzimidazole derivative is incorporated into agricultural and horticultural fungicides as an active ingredient.
摘要翻译：具有下式的苯并咪唑衍生物，其中R是氰基或硫代氨基甲酰基; Q是低级烷基或由式NQ1Q2表示的基团，其中Q1和Q2独立地是低级烷基，被苯基，低级链烯基或低级炔基取代的低级烷基，或者当它们的末端相互结合时，它们形成低级亚烷基环可以包括杂原子; X是氢或卤素; Z为由（a）一个氧原子或两个不相邻氧原子组成的基团，（b）-CF2-基团和（c）单键，-CF2-，-CFH-，CFCl- 和-CH 2 - 基团，并与苯环的两个相邻碳原子一起形成五元或六元环; 是通过使相应的2-氰基苯并咪唑化合物和氨磺酰氯衍生物反应得到的。苯并咪唑衍生物作为活性成分掺入农业和园艺杀真菌剂中。

29. 发明授权

US5234938A Benzimidazole derivative, its intermediate compounds and an agricultural and horticultural fungicide containing the benzimidazole derivative as an active ingredient 失效
标题翻译：苯并咪唑衍生物，其中间体化合物和含有作为活性成分的苯并咪唑衍生物的农业和农业用杀真菌剂
公开(公告)号：US5234938A
公开(公告)日：1993-08-10
申请号：US792477
申请日：1991-11-15
申请人： Masayuki Enomoto , Junya Takahashi , Tomoyuki Kusaba , Masayo Sugano , Rei Matsunaga , Masahiro Tamaki
发明人： Masayuki Enomoto , Junya Takahashi , Tomoyuki Kusaba , Masayo Sugano , Rei Matsunaga , Masahiro Tamaki
IPC分类号： A01N43/52 , C07C217/84 , C07D235/10 , C07D235/24
CPC分类号： C07D235/24 , C07C217/84 , C07D235/10
摘要： A benzimidazole derivative having the formula, ##STR1## wherein X is halogen, is produced by reacting a compound having the formula, ##STR2## wherein X is halogen, with dimethylsulfamoyl chloride. The benzimidazole derivative can be used as an active ingredient in agricultural and horticultural fungicides.

30. 发明授权

US5028714A Hydroxylamine ethers 失效
标题翻译：羟胺醚
公开(公告)号：US5028714A
公开(公告)日：1991-07-02
申请号：US596375
申请日：1990-10-12
申请人： Naoto Meki , Kazue Nishida , Tomotoshi Imahase , Hiroaki Fujimoto , Kenichi Mikitani , Hirotaka Takano , Yoriko Ogasawara , Masahiro Tamaki
发明人： Naoto Meki , Kazue Nishida , Tomotoshi Imahase , Hiroaki Fujimoto , Kenichi Mikitani , Hirotaka Takano , Yoriko Ogasawara , Masahiro Tamaki
IPC分类号： A01N55/10 , C07C21/22 , C07C22/00 , C07C22/02 , C07C22/08 , C07C33/42 , C07C33/44 , C07C33/48 , C07C43/17 , C07C43/178 , C07C239/20 , C07C323/05 , C07C323/14 , C07D213/26 , C07D213/30 , C07D231/20 , C07D231/22 , C07D401/12 , C07D405/12 , C07D409/12 , C07F7/08
CPC分类号： C07D213/30 , C07C21/22 , C07C22/00 , C07C22/02 , C07C22/08 , C07C239/20 , C07C323/05 , C07C323/14 , C07C33/42 , C07C33/44 , C07C33/48 , C07C43/17 , C07C43/1786 , C07D213/26 , C07D231/20 , C07D231/22 , C07D401/12 , C07D405/12 , C07D409/12 , C07F7/0812
摘要： There are disclosed a pyrazole compound represented by the formula ##STR1## wherein the substituents of R.sub.1 to R.sub.7 and the symbol Z have the specified meanings as described in the text, an insecticidal, acaricidal and fungicidal composition containing the same, use of said composition for control of insects, acarids and fungi and a method of preparing said compound, and its intermediate.

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