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21. 发明申请

US20070091198A1 Image pickup apparatus and method of manufacturing the same 有权
标题翻译：摄像装置及其制造方法
公开(公告)号：US20070091198A1
公开(公告)日：2007-04-26
申请号：US11338856
申请日：2006-01-25
申请人： Naoyuki Watanabe , Toshiyuki Honda , Noboru Hayasaka
发明人： Naoyuki Watanabe , Toshiyuki Honda , Noboru Hayasaka
IPC分类号： H04N5/225
CPC分类号： H04N5/2254
摘要： To provide an image pickup apparatus with excellent optical characteristics as well as high reliability and a method of manufacturing the same, capable of efficiently manufacturing the image pickup apparatus in large quantities. The image pickup apparatus of the present invention includes a support board 10, an image pickup device 20 mounted on the support board 10, and a lens component 30 provided on the light receiving region of the image pickup device 20, wherein the lens component 30 has a protrusion part 33 provided around the lens part 31, and the height of the protrusion part 33 from the surface of image pickup device 20 is greater than that of the top 31A of lens part 31 from the surface of the image pickup device 20.
摘要翻译：为了提供具有优异的光学特性以及高可靠性的图像拾取装置及其制造方法，能够大量有效地制造图像拾取装置。本发明的图像拾取装置包括支撑板10，安装在支撑板10上的图像拾取装置20和设置在图像拾取装置20的光接收区域上的透镜部件30，其中透镜部件30具有设置在透镜部31周围的突出部33以及从摄像装置20的表面突出部33的高度大于透镜部31的顶面31A从摄像装置20的表面的高度。

22. 发明申请

US20050116203A1 Conductive composition, conductive film, and process for the formation of the film 有权
标题翻译：导电组合物，导电膜和用于形成膜的方法
公开(公告)号：US20050116203A1
公开(公告)日：2005-06-02
申请号：US10510512
申请日：2003-04-09
申请人： Katsuhiko Takahashi , Kiwako Ohmori , Masanori Endo , Hikaru Yasuhara , Takayuki Imai , Akinobu Ono , Toshiyuki Honda , Koji Okamoto , Masafumi Ito
发明人： Katsuhiko Takahashi , Kiwako Ohmori , Masanori Endo , Hikaru Yasuhara , Takayuki Imai , Akinobu Ono , Toshiyuki Honda , Koji Okamoto , Masafumi Ito
IPC分类号： C08K3/08 , C08K3/22 , C08K3/26 , C08L61/00 , C08L63/00 , C08L67/00 , C09D5/24 , C09J9/02 , H01B1/22 , H05K1/09 , H01C1/00
CPC分类号： H05K1/095 , C08K3/22 , C08K3/26 , C08K2003/0806 , C08K2003/2286 , C08L61/00 , C08L63/00 , C08L67/00 , C09D5/24 , C09J9/02 , H01B1/22
摘要： A conductive composition capable of producing a conductive paint with excellent flexibility and a high conductivity comparable to that of metallic silver, without using high temperatures as film forming conditions. The conductive composition includes a particulate silver compound and a binder, and optionally a reducing agent and a binder. Silver oxide, silver carbonate and silver acetate and the like are used as the particulate silver compound. Ethylene glycol, diethylene glycol, and ethylene glycol diacetate and the like are used as the reducing agent, and a fine powder of a thermosetting resin such as a polyvalent phenol compound, phenol resin, alkyd resin or polyester resin, or a thermoplastic resin such as a styrene resin or polyethylene terephthalate, with an average particle diameter from 20 nm to 5 μm is used as the binder. Furthermore, the average particle diameter of the particulate silver compound is preferably from 0.01 to 10 μm.
摘要翻译：一种导电组合物，其能够制备具有优异柔性和高导电性的导电涂料，与金属银相当，而不用高温作为成膜条件。导电组合物包括颗粒状银化合物和粘合剂，以及任选的还原剂和粘合剂。使用氧化银，碳酸银和乙酸银等作为颗粒状银化合物。乙二醇，二乙二醇和乙二醇二乙酸酯等用作还原剂，并且使用多价酚化合物，酚醛树脂，醇酸树脂或聚酯树脂等热固性树脂或热塑性树脂使用平均粒径为20nm〜5μm的苯乙烯树脂或聚对苯二甲酸乙二醇酯作为粘合剂。此外，颗粒状银化合物的平均粒径优选为0.01〜10μm。

23. 发明申请

US20050018468A1 Ferroelectric memory 有权
标题翻译：铁电存储器
公开(公告)号：US20050018468A1
公开(公告)日：2005-01-27
申请号：US10919403
申请日：2004-08-17
申请人： Toshiyuki Honda
发明人： Toshiyuki Honda
IPC分类号： H01L27/105 , G11C7/00 , G11C11/22 , H01L21/02 , H01L21/8246 , H01L27/10 , H01L27/115
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11507 , H01L28/55
摘要： A ferroelectric memory has a plurality of memory cells each having a transistor and a ferroelectric capacitor arranged in a matrix. Plate lines run in the word line direction above the ferroelectric capacitors of memory cells adjacent to each other in the word line direction among the plurality of memory cells. Bit line contacts each for connecting a bit line and an active region of the transistor are placed in regions between the plate lines adjacent to each other in the bit line direction and between the ferroelectric capacitors adjacent to each other in the word line direction. Cuts are formed at positions of the plate lines near the bit line contacts. The active regions of the transistors of the plurality of memory cells extend in directions intersecting with the word line direction and the bit line direction.
摘要翻译：铁电存储器具有多个存储单元，每个存储单元具有以矩阵形式布置的晶体管和铁电电容器。板条线在多个存储单元之间的字线方向上彼此相邻的存储单元的铁电电容器之间的字线方向上延伸。每个用于连接位线的位线触点和晶体管的有源区域被放置在位线方向上彼此相邻的板线之间的区域中以及在字线方向上彼此相邻的铁电电容器之间的区域中。在位线接触点附近的板条的位置处形成切口。多个存储单元的晶体管的有源区域在与字线方向和位线方向相交的方向上延伸。

24. 发明授权

US06784468B2 Ferroelectric memory 有权
标题翻译：铁电存储器
公开(公告)号：US06784468B2
公开(公告)日：2004-08-31
申请号：US09988817
申请日：2001-11-20
申请人： Toshiyuki Honda
发明人： Toshiyuki Honda
IPC分类号： H01L2710
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11507 , H01L28/55
摘要： A ferroelectric memory has a plurality of memory cells each having a transistor and a ferroelectric capacitor arranged in a matrix. Plate lines run in the word line direction above the ferroelectric capacitors of memory cells adjacent to each other in the word line direction among the plurality of memory cells. Bit line contacts each for connecting a bit line and an active region of the transistor are placed in regions between the plate lines adjacent to each other in the bit line direction and between the ferroelectric capacitors adjacent to each other in the word line direction. Cuts are formed at positions of the plate lines near the bit line contacts. The active regions of the transistors of the plurality of memory cells extend in directions intersecting with the word line direction and the bit line direction.
摘要翻译：铁电存储器具有多个存储单元，每个存储单元具有以矩阵形式布置的晶体管和铁电电容器。板条线在多个存储单元之间的字线方向上彼此相邻的存储单元的铁电电容器之间的字线方向上延伸。每个用于连接位线的位线触点和晶体管的有源区域被放置在位线方向上彼此相邻的板线之间的区域中以及在字线方向上彼此相邻的铁电电容器之间的区域中。在位线接触点附近的板条的位置处形成切口。多个存储单元的晶体管的有源区域在与字线方向和位线方向相交的方向上延伸。

25. 发明授权

US6069408A Semiconductor device and method of manufacturing semiconductor device 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US6069408A
公开(公告)日：2000-05-30
申请号：US231487
申请日：1999-01-14
申请人： Toshiyuki Honda , Akihiro Oku , Takanori Watanabe , Kazuto Tsuji , Yoshiyuki Yoneda
发明人： Toshiyuki Honda , Akihiro Oku , Takanori Watanabe , Kazuto Tsuji , Yoshiyuki Yoneda
IPC分类号： H01L23/12 , H01L21/56 , H01L21/68 , H01L23/31 , H01L23/28
CPC分类号： H01L21/568 , H01L21/565 , H01L23/3107 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49109 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/18165 , Y10T29/49169
摘要： A method of manufacturing a semiconductor device includes the steps of: mounting a semiconductor chip on a holding board having electrode accommodation recesses formed thereon, and mounting electrode members to the electrode accommodation recesses, the electrode members being formed separately from the semiconductor element; electrically connecting electrode pads formed on the semiconductor chip with the electrode members; forming a resin package for sealing the semiconductor chip on the holding board by using a die, the holding board serving as a part of the die; and separating the resin package including the electrode members from the holding board. A semiconductor device includes: a semiconductor chip; a resin package for sealing the semiconductor chip; electrode members which are embedded in and held by the resin package and which are partly exposed from a mounting surface so as to form external connection terminals; and connecting parts electrically connecting electrode pads on the semiconductor chip with the electrode members.
摘要翻译：一种制造半导体器件的方法包括以下步骤：将半导体芯片安装在其上形成有电极容纳凹部的保持板上，以及将电极构件安装到电极容纳凹部，电极构件与半导体元件分开形成; 将形成在半导体芯片上的电极焊盘与电极部件电连接; 通过使用模具形成用于将所述保持板上的半导体芯片密封的树脂封装，所述保持板用作所述管芯的一部分; 以及将包括电极构件的树脂封装从保持板分离。半导体器件包括：半导体芯片; 用于密封半导体芯片的树脂封装; 电极构件，其嵌入并保持在树脂封装中，并且从安装表面部分露出以形成外部连接端子; 以及将半导体芯片上的电极焊盘与电极部件电连接的部分。

26. 发明授权

US5594697A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5594697A
公开(公告)日：1997-01-14
申请号：US494827
申请日：1995-06-26
申请人： Hiroshige Hirano , Toshiyuki Honda
发明人： Hiroshige Hirano , Toshiyuki Honda
IPC分类号： G11C5/14 , G11C7/06 , G11C16/26
CPC分类号： G11C7/067 , G11C16/26 , G11C5/143 , G11C2207/063
摘要： A semiconductor device includes a nonvolatile memory cell and a current detecting type sense amplifier for detecting a current flowing through a data line into the memory cell. The semiconductor device is further provided with an element for outputting a first voltage detecting signal when a detected supply voltage exceeds a set value and outputting a second voltage detecting signal when the detected supply voltage does not exceed the set value. The sense amplifier includes an element for switching a dependent characteristic of a level sensing current upon the supply voltage to be higher in response to the second voltage detecting signal that in response to the first voltage detecting signal. Thus, error reading of a data from the memory cell, which can be otherwise caused under application of a low supply voltage, can be avoided.
摘要翻译：半导体器件包括非易失性存储单元和电流检测型读出放大器，用于检测流过存储单元的数据线的电流。半导体器件还设置有用于当检测到的电源电压超过设定值时输出第一电压检测信号并在检测到的电源电压未超过设定值时输出第二电压检测信号的元件。感测放大器包括用于响应于响应于第一电压检测信号的第二电压检测信号而将电源电压上的电平感测电流的相关特性切换到更高的元件。因此，可以避免在应用低电源电压下可能导致来自存储单元的数据的错误读取。

27. 发明授权

US5447888A Process of ejecting an encapsulated semiconductor device from a mold by directly contacting exterior leads with ejector pins 失效
标题翻译：制造半导体器件封装的方法
公开(公告)号：US5447888A
公开(公告)日：1995-09-05
申请号：US194343
申请日：1994-02-08
申请人： Akira Takashima , Toshiyuki Honda , Masaki Waki
发明人： Akira Takashima , Toshiyuki Honda , Masaki Waki
IPC分类号： B29C45/14 , H01L21/56 , B29C45/02 , H01L21/603
CPC分类号： B29C45/14655 , H01L21/565 , H01L2224/48091 , H01L2224/48247 , H01L2924/1815 , Y10T29/49121
摘要： A process wherein the parts of a lead frame that are outside a cavity are directly supported by ejecting pins extending from above and from below when the lead frame is sandwiched between an upper die and a lower die. The ejecting pins eject the lead frame, on which a package is formed, after a resin mold process.
摘要翻译：当引线框架夹在上模和下模之间时，引导框架外部空腔的这些部分直接由从上方和下方延伸的引脚支撑。在树脂模具加工之后，弹出销弹出形成包装的引线框架。

28. 发明授权

US09092361B2 Nonvolatile storage device, memory controller, and defective region detection method 有权
标题翻译：非易失性存储装置，存储器控制器和缺陷区域检测方法
公开(公告)号：US09092361B2
公开(公告)日：2015-07-28
申请号：US11995600
申请日：2006-07-13
申请人： Toshiyuki Honda , Kunihiro Maki , Shigekazu Kogita
发明人： Toshiyuki Honda , Kunihiro Maki , Shigekazu Kogita
IPC分类号： G06F11/00 , G06F11/10
CPC分类号： G06F11/1068
摘要： It is possible to accurately detect a physical block which has caused a fixture defect in a flash memory so as to limit the use of the physical block. By recording a history of generation of a physical block error and a history of physical erasing in an ECC error record, it is judged whether the error which has occurred is accidental or caused by a fixture defect. When no error is caused in the data written by physical erasing after a first read error occurrence, the first error is accidental and if another error is caused, the error is judged to be caused by a fixture defect. By using such an ECC error record, it is possible to accurately judge whether the error is accidental or caused by a fixture defect. By eliminating use of the physical block judged to have a fixture defect, it is possible to reduce read errors.
摘要翻译：可以精确地检测在闪速存储器中造成夹具缺陷的物理块，从而限制物理块的使用。通过在ECC错误记录中记录生成物理块错误和物理擦除历史的历史，判断发生的错误是偶然的还是由固定缺陷引起的。在第一次读取错误发生后，通过物理擦除写入的数据没有引起错误时，第一个错误是偶然的，如果引起另一个错误，则判断该错误是由于一个夹具缺陷引起的。通过使用这样的ECC错误记录，可以准确地判断误差是偶然的还是由夹具缺陷引起的。通过消除被认为具有夹具缺陷的物理块的使用，可以减少读取错误。

29. 发明授权

US08819329B2 Nonvolatile storage device, access device and nonvolatile storage system 有权
标题翻译：非易失存储设备，接入设备和非易失性存储系统
公开(公告)号：US08819329B2
公开(公告)日：2014-08-26
申请号：US13046053
申请日：2011-03-11
申请人： Masato Suto , Toshiyuki Honda , Keizo Miyata
发明人： Masato Suto , Toshiyuki Honda , Keizo Miyata
IPC分类号： G06F3/06 , G11C11/56 , G06F12/02
CPC分类号： G11C11/5628 , G06F3/0619 , G06F3/0652 , G06F3/0679 , G06F11/1446 , G06F12/0246 , G06F2212/7205 , Y02D10/13
摘要： A memory controller includes a reading/writing control unit for controlling writing and reading of data to and from a physical block of a nonvolatile memory, a writing mode table for storing one of a first writing mode of protecting data against a power shutdown during writing and a second writing mode of writing data at a higher speed than the first writing mode, and a setting unit for setting the writing mode received from an access device in a writing mode table. The reading/writing control unit performs data writing based on the writing mode that has been set in the writing mode table.
摘要翻译：存储器控制器包括用于控制从非易失性存储器的物理块写入数据和从非易失性存储器的物理块读取数据的读/写控制单元，用于存储写入期间保护数据的第一写入模式与电源关闭的第一写入模式的写模式表;以及以比第一写入模式更高的速度写入数据的第二写入模式，以及设置单元，用于在写入模式表中设置从访问设备接收的写入模式。读取/写入控制单元基于在写入模式表中设置的写入模式执行数据写入。

30. 发明授权

US08656252B2 Memory controller and non-volatile storage device 有权
标题翻译：内存控制器和非易失性存储设备
公开(公告)号：US08656252B2
公开(公告)日：2014-02-18
申请号：US13463170
申请日：2012-05-03
申请人： Hirokazu So , Toshiyuki Honda
发明人： Hirokazu So , Toshiyuki Honda
IPC分类号： G11C29/00
CPC分类号： H03M13/2906 , G06F11/1044 , G06F11/108 , H03M13/05 , H03M13/1515 , H03M13/27 , H03M13/2927 , H03M13/3715 , H03M13/3738 , H03M13/6561
摘要： A non-volatile storage device includes one or more non-volatile memories for storing data, and a memory controller for carrying out the control of the non-volatile memory. The non-volatile memory includes the plurality of blocks, which are erase units, and the block includes the plurality of pages, which are write units of data, in each of the blocks at least one set of pages existing which include at least two pages sharing one word line. The memory controller configures a plurality of error correcting groups, each including at least one data page, which is a page for storing data, and at least one error correcting code page for storing a code for error correcting calculation of the data page, and assigns a page of a separate word line with respect to each of the data page and the error correcting page in the same error correcting group.
摘要翻译：非易失性存储设备包括用于存储数据的一个或多个非易失性存储器和用于执行非易失性存储器的控制的存储器控制器。非易失性存储器包括作为擦除单元的多个块，并且该块包括作为数据的写入单元的多个页面，每个块中存在至少一组页面，其包括至少两个页面共享一个字线。存储器控制器配置多个纠错组，每个纠错组包括作为用于存储数据的页面的至少一个数据页面和用于存储用于错误校正数据页面计算的代码的至少一个纠错码页面，并且分配关于相同纠错组中的每个数据页和错误校正页的单独字线的页面。

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