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21. 发明授权

US06753132B2 Pattern formation material and pattern formation method 有权
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06753132B2
公开(公告)日：2004-06-22
申请号：US10034366
申请日：2002-01-03
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03F700
CPC分类号： G03F7/0392 , G03F7/0046 , Y10S430/108 , Y10S430/168
摘要： A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: Chemical Formula 1: Chemical Formula 2: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译：通过在基板上涂布含有由化学式1表示的第一单元和化学式2表示的第二单元的聚合物的图案形成材料和酸产生剂，形成抗蚀剂膜：化学式1：化学式2 其中R1和R2相同或不同，选自烷基，氯原子和含氟原子的烷基; R3是由酸释放的保护基; m为0〜5的整数。接着，对曝光后的光的波长短于180nm的曝光光照射抗蚀剂膜，通过在图案曝光后使抗蚀剂膜显影而形成抗蚀剂图案。

22. 发明授权

US06710148B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06710148B2
公开(公告)日：2004-03-23
申请号：US10068298
申请日：2002-02-08
申请人： Yuji Harada , Jun Hatakeyama , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
发明人： Yuji Harada , Jun Hatakeyama , Jun Watanabe , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Michitaka Ootani , Satoru Miyazawa , Kentaro Tsutsumi , Kazuhiko Maeda
IPC分类号： C08F11800
CPC分类号： G03F7/0395 , C08F232/08 , G03F7/0046 , G03F7/0397
摘要： A copolymer of an acrylate monomer containing fluorine at &agr;-position with a norbornene derivative is highly transparent to VUV radiation and resistant to dry etching. A resist composition using the resin as a base polymer is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, and is suited for lithographic microprocessing.
摘要翻译：在α-位含氟的丙烯酸酯单体与降冰片烯衍生物的共聚物对VUV辐射是高度透明的并且耐干蚀刻。使用树脂作为基础聚合物的抗蚀剂组合物对于低于200nm的高能辐射敏感，具有优异的灵敏度，并且适用于光刻微处理。

23. 发明授权

US06689536B2 Pattern formation material and pattern formation method 有权
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06689536B2
公开(公告)日：2004-02-10
申请号：US10033899
申请日：2002-01-03
申请人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
发明人： Shinji Kishimura , Masayuki Endo , Masaru Sasago , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03C1492
CPC分类号： G03F7/0046 , G03F7/0392
摘要： A resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R3 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a fluorine atom; R2 is a protecting group released by an acid; and m is an integer of 0 through 5. Subsequently, the resist film is irradiated with exposing light of a wavelength shorter than a 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.
摘要翻译：通过在基板上涂布含有由化学式1表示的第一单元的聚合物和由化学式2表示的第二单元的聚合物形成抗蚀剂膜，其中R1和R3相同或不同，选自烷基，氯原子和含氟原子的烷基; R2是由酸释放的保护基; m为0〜5的整数。接着，利用曝光时间短于180nm波长的曝光光照射抗蚀剂膜，通过在图案曝光后使抗蚀剂膜显影而形成抗蚀剂图案。

24. 发明授权

US06306556B1 Pattern forming material and pattern forming method 失效
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06306556B1
公开(公告)日：2001-10-23
申请号：US09551656
申请日：2000-04-18
申请人： Takahiro Matsuo , Masayuki Endo , Masamitsu Shirai , Masahiro Tsunooka
发明人： Takahiro Matsuo , Masayuki Endo , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03C1725
CPC分类号： G03F7/265 , G03F7/0045 , G03F7/039
摘要： A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0
摘要翻译：图案形成材料包括由以下通式表示的二元共聚物或通过使二元共聚物与另一基团进一步聚合而获得的三元或更高级共聚物：其中R1表示氢原子或烷基; R2和R3独立地表示氢原子，烷基，苯基或烯基，或者一起表示环状烷基，环状烯基，具有苯基的环状烷基或具有苯基的环状链烯基 ; R4表示氢原子或烷基; x满足0

25. 发明授权

US6133465A Pattern formation method and surface treatment agent 失效
标题翻译：图案形成方法和表面处理剂
公开(公告)号：US6133465A
公开(公告)日：2000-10-17
申请号：US951001
申请日：1997-10-15
申请人： Masayuki Endo , Hiromi Ohsaki
发明人： Masayuki Endo , Hiromi Ohsaki
IPC分类号： G03F7/075 , C07F7/08 , C07F7/18
CPC分类号： G03F7/0751
摘要： A surface of a semiconductor substrate of silicon is supplied with 4-trimethylsiloxy-3-penten-2-one serving as a surface treatment agent. Thus, H in OH groups existing on the surface of the semiconductor substrate is substituted with Si(CH.sub.3).sub.3 (i.e., a trimethylsilyl group), resulting in producing CH.sub.3 COCH.sub.2 COCH.sub.3 (i.e., acetylacetone). Then, the surface of the semiconductor substrate is coated with a resist, exposed by using a desired mask, and subjected successively to PEB and development, thereby forming a resist pattern thereon. Since the surface of the semiconductor substrate is treated with 4-trimethylsiloxy-3-penten-2-one, the surface of the semiconductor substrate is made to be hydrophobic, so that the adhesion of the semiconductor substrate can be improved. As a result, the resultant resist pattern has a satisfactory shape free from peeling.
摘要翻译：供给作为表面处理剂的4-三甲基甲硅烷氧基-3-戊烯-2-酮的硅的半导体基板的表面。因此，存在于半导体衬底表面的OH基中的H被Si（CH 3）3（即三甲基甲硅烷基）取代，导致产生CH 3 COCH 2 COCH 3（即乙酰丙酮）。然后，用抗蚀剂涂布半导体基板的表面，利用所需的掩模进行曝光，依次进行PEB显影，形成抗蚀图案。由于半导体衬底的表面被4-三甲基甲硅烷氧基-3-戊烯-2-酮处理，所以半导体衬底的表面被制成疏水性，从而可以提高半导体衬底的粘合性。结果，得到的抗蚀剂图形具有令人满意的剥离形状。

26. 发明授权

US5958648A Radiation sensitive resin composition 失效
标题翻译：辐射敏感树脂组合物
公开(公告)号：US5958648A
公开(公告)日：1999-09-28
申请号：US82192
申请日：1998-05-21
申请人： Isao Nishimura , Masayuki Endo
发明人： Isao Nishimura , Masayuki Endo
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0046 , G03F7/0382 , G03F7/0045 , G03F7/0385 , Y10S430/115 , Y10S430/121 , Y10S430/122 , Y10S430/128
摘要： A radiation sensitive resin composition comprising (A) a fluorine-containing copolymer of hexafluoropropylene, at least one compound selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides, and an unsaturated compound (B) an acid generating compound which generates an acid upon exposure to radiation; (C) a cross-linkable compound; and (D) an organic solvent. The composition suitable is useful for a negative resist for forming a mask for the production of a circuit such as a semiconductor integrated circuit or a thin film transistor circuit for liquid crystal displays as well as a material for forming a permanent film such as an interlaminar insulating film or a color filter protective film.
摘要翻译：一种辐射敏感性树脂组合物，其包含（A）六氟丙烯的含氟共聚物，选自不饱和羧酸和不饱和羧酸酐的至少一种化合物和不饱和化合物（B）产生酸的酸产生化合物暴露于辐射后; （C）可交联的化合物; 和（D）有机溶剂。合适的组合物可用于形成用于制造诸如半导体集成电路或用于液晶显示器的薄膜晶体管电路的电路的掩模的负抗蚀剂以及用于形成诸如层间绝缘的永久膜的材料胶片或滤色片保护膜。

27. 发明授权

US5795828A Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device 失效
标题翻译：用于形成半导体器件的布线的无电镀浴，以及形成半导体器件的布线的方法
公开(公告)号：US5795828A
公开(公告)日：1998-08-18
申请号：US675667
申请日：1996-07-03
申请人： Masayuki Endo , Akemi Kawaguchi , Mikio Nishio , Shin Hashimoto
发明人： Masayuki Endo , Akemi Kawaguchi , Mikio Nishio , Shin Hashimoto
IPC分类号： C23C18/34 , C23C18/40 , C23C18/44 , H01L21/44
CPC分类号： C23C18/40 , C23C18/34 , C23C18/44
摘要： A contact hole and a wiring groove are formed in an insulating layer formed on a semiconductor substrate. A silver layer is formed inside of the contact hole and the wiring groove and on the insulating layer with the use of an electroless plating bath comprising: silver nitrate containing silver ions; tartaric acid serving as a reducing agent of the silver ions; ethylenediamine serving as a complexing agent of the silver ions; and metallic ions of tetramethylammoniumhydroxide serving as a pH control agent. Then, the silver layer on the insulating layer is removed by a chemical and mechanical polishing method such that an embedded wiring is formed in each of the contact hole and the wiring groove.
摘要翻译：在半导体衬底上形成的绝缘层中形成接触孔和布线槽。通过使用含有银离子的硝酸银的化学镀浴，在接触孔和布线槽内部和绝缘层上形成银层; 酒石酸作为银离子的还原剂; 乙二胺作为银离子的络合剂; 和作为pH调节剂的四甲基氢氧化铵的金属离子。然后，通过化学和机械抛光方法去除绝缘层上的银层，使得在每个接触孔和布线槽中形成嵌入的布线。

28. 发明授权

US5679500A Method of forming micropatterns utilizing silylation and overall energy beam exposure 失效
标题翻译：使用甲硅烷基化和总能量束曝光形成微图案的方法
公开(公告)号：US5679500A
公开(公告)日：1997-10-21
申请号：US564822
申请日：1995-11-29
申请人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
发明人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26 , G03F7/32 , H01L21/027 , H01L21/033 , G03F7/36 , G03F7/38
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译：通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生酸并与酸反应。如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生酸，使得暴露部分的表面由酸形成亲水性。如果将水蒸汽供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。如果甲基三乙氧基硅烷的蒸气在相对湿度为95％的空气中被喷涂在抗蚀剂膜的表面上，则在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。

29. 发明授权

US5569628A Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5569628A
公开(公告)日：1996-10-29
申请号：US535323
申请日：1995-09-27
申请人： Kousaku Yano , Tomoyasu Murakami , Masayuki Endo , Noboru Nomura
发明人： Kousaku Yano , Tomoyasu Murakami , Masayuki Endo , Noboru Nomura
IPC分类号： H01L21/28 , H01L21/768 , H01L21/465
CPC分类号： H01L21/76841 , H01L21/76843
摘要： A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.
摘要翻译：部分地蚀刻掉二氧化硅膜以形成开口，从而暴露硅衬底。几乎完全用Si-OH覆盖的开口的表面涂覆有六甲基二硅氮烷（HMDS）以进行甲硅烷基化反应。这导致硅衬底表面被用Si（（CH 3）3代替Si-OH中的氢部分而形成的分子膜覆盖，铝的原子通过溅射工艺喷射，喷射的铝原子与分子膜碰撞虽然由于这种碰撞而使一些烃类（CHx）溅射或喷射，但是从分子膜转化的SiO x C y H z膜12'留在沉积的铝膜和硅基板之间，该SiOxCyHz膜12'作为阻挡金属， SiOxCyHz膜的存在防止了在Al-Si系统中产生反向扩散，结果不形成尖峰。

30. 发明授权

US5558971A Resist material 失效
标题翻译：抗拒材料
公开(公告)号：US5558971A
公开(公告)日：1996-09-24
申请号：US407611
申请日：1995-03-21
申请人： Fumiyoshi Urano , Takaai Negishi , Akiko Katsuyama , Masayuki Endo
发明人： Fumiyoshi Urano , Takaai Negishi , Akiko Katsuyama , Masayuki Endo
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译：抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。

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