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21. 发明申请

US20090140174A1 Impurity Introducing Apparatus and Impurity Introducing Method 审中-公开
标题翻译：杂质介绍仪器和杂质介绍方法
公开(公告)号：US20090140174A1
公开(公告)日：2009-06-04
申请号：US11887371
申请日：2006-03-29
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： H01J37/317 , H01J37/32
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision.In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
摘要翻译：当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

22. 发明授权

US07626184B2 Impurity introducing apparatus and impurity introducing method 失效
标题翻译：杂质引入装置和杂质引入方法
公开(公告)号：US07626184B2
公开(公告)日：2009-12-01
申请号：US12057117
申请日：2008-03-27
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： H01L29/04 , G21K5/10
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
摘要翻译：当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

23. 发明申请

US20080166861A1 IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD 失效
标题翻译：引进设备和引进方法的引入
公开(公告)号：US20080166861A1
公开(公告)日：2008-07-10
申请号：US12057117
申请日：2008-03-27
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： H01L21/26
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
摘要翻译：当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

24. 发明申请

US20090035878A1 Plasma Doping Method and Apparatus 审中-公开
标题翻译：等离子体掺杂法和装置
公开(公告)号：US20090035878A1
公开(公告)日：2009-02-05
申请号：US11887359
申请日：2006-03-30
申请人： Yuichiro Sasaki , Tomohiro Okumura , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno
发明人： Yuichiro Sasaki , Tomohiro Okumura , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno
IPC分类号： H01L21/265 , B05C11/00
CPC分类号： H01J37/32935 , H01J37/32412 , H01L21/67115 , H01L22/20 , H01L22/26
摘要： There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer.A plasma doping method of generating a plasma in a vacuum chamber and colliding an ion in the plasma with a surface of a sample to modify a surface of a crystal sample to be amorphous, includes the steps of carrying out a plasma irradiation over a dummy sample to perform an amorphizing treatment together with a predetermined number of samples, irradiating a light on a surface of the dummy sample subjected to the plasma irradiation, thereby measuring an optical characteristic of the surface of the dummy sample, and controlling a condition for treating the sample in such a manner that the optical characteristic obtained at the measuring step has a desirable value.
摘要翻译：提供了等离子体掺杂方法和装置，该方法和设备在被引入样品或非晶层的深度中的杂质的注入深度的重复性和可控性方面是优异的。一种在真空室中产生等离子体并将等离子体中的离子与样品的表面相互作用以将晶体样品的表面修饰为无定形的等离子体掺杂方法包括以下步骤：对虚拟样品进行等离子体照射与预定数量的样品一起进行非晶化处理，照射经受等离子体照射的虚拟样品的表面上的光，从而测量虚拟样品的表面的光学特性，并控制处理样品的条件使得在测量步骤获得的光学特性具有期望的值。

25. 发明申请

US20090042321A1 APPARATUS AND METHOD FOR PLASMA DOPING 审中-公开
标题翻译：用于等离子喷涂的装置和方法
公开(公告)号：US20090042321A1
公开(公告)日：2009-02-12
申请号：US12183775
申请日：2008-07-31
申请人： Yuichiro Sasaki , Tomohiro Okumura , Hiroyuki Ito , Keiichi Nakamoto , Katsumi Okashita , Bunji Mizuno
发明人： Yuichiro Sasaki , Tomohiro Okumura , Hiroyuki Ito , Keiichi Nakamoto , Katsumi Okashita , Bunji Mizuno
IPC分类号： H01L21/66 , C23C16/513
CPC分类号： H01J37/32449 , H01J37/32412 , H01J37/3244
摘要： Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center.
摘要翻译：通过气体供给管线从气体供给装置供给到顶板的气体流路的气体沿着基板的中心轴线沿着垂直方向形成流动，从而能够使从气体吹入孔吹出的气体均匀，薄片电阻分布围绕基板中心旋转对称。

26. 发明申请

US20070190759A1 PLASMA DOPING METHOD 失效
标题翻译：等离子喷涂方法
公开(公告)号：US20070190759A1
公开(公告)日：2007-08-16
申请号：US11741861
申请日：2007-04-30
申请人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
发明人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/66795
摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.
摘要翻译：实现了可以精确控制剂量的等离子体掺杂方法。剂量的面内均匀性得到改善。已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。本发明已经确定了结果。也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。此外，如果时间进一步增加，则剂量降低。剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

27. 发明申请

US20070166846A1 Plasma doping method 失效
标题翻译：等离子体掺杂法
公开(公告)号：US20070166846A1
公开(公告)日：2007-07-19
申请号：US11647149
申请日：2006-12-29
申请人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
发明人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
IPC分类号： H01L21/66 , H01L21/04 , G01R31/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/66795
摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.
摘要翻译：实现了可以精确控制剂量的等离子体掺杂方法。剂量的面内均匀性得到改善。已经发现，如果通过将B 2 H 2 H 6 / He / He等离子体照射到硅衬底上施加偏压，则存在硼剂量为与能够确保装置控制的可重复性的时间相比，饱和时间比较长，易于稳定地使用。本发明已经确定了结果。也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。此外，如果时间进一步增加，则剂量降低。剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

28. 发明申请

US20070111548A1 Plasma doping method and plasma doping apparatus 审中-公开
标题翻译：等离子体掺杂法和等离子体掺杂装置
公开(公告)号：US20070111548A1
公开(公告)日：2007-05-17
申请号：US11647235
申请日：2006-12-29
申请人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
发明人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/2236 , C23C14/48 , H01J37/32412
摘要： Disclosed is a plasma doping method that, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. According to an embodiment of the invention, there is provided a plasma doping method that places a sample on a sample electrode in a vacuum chamber, generates plasma in the vacuum chamber, and causes impurity ions in the plasma to collide against a surface of the sample so as to form an impurity doped layer in the surface of the sample. The plasma doping method includes a maintenance step of preparing the vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film containing the impurity fixed to the inner wall of the vacuum chamber is attacked by ions in the plasma, the amount of an impurity to be doped into the surface of the sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber, a step of placing the sample on the sample electrode, and a step of irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.
摘要翻译：公开了等离子体掺杂方法，即使重复进行等离子体掺杂处理，也可以每次从膜到硅衬底的剂量均匀。根据本发明的实施例，提供了一种等离子体掺杂方法，其将样品置于真空室中的样品电极上，在真空室中产生等离子体，并使等离子体中的杂质离子与样品的表面碰撞以在样品的表面形成杂质掺杂层。等离子体掺杂方法包括维持步骤，准备具有含有形成在其内壁上的杂质的膜的真空室，使得当包含固定在真空室的内壁上的杂质的膜被等离子体中的离子侵蚀时即使在真空室中重复产生含有杂质离子的等离子体，将样品放置在样品电极上的步骤，也可以通过溅射将待掺杂到样品表面的杂质量变化，照射含有杂质离子的等离子体，以将杂质离子注入到样品中，并通过溅射从固定到真空室的内壁的杂质的膜溅射而将杂质掺杂到样品中。

29. 发明申请

US20080318399A1 PLASMA DOPING METHOD 审中-公开
标题翻译：等离子喷涂方法
公开(公告)号：US20080318399A1
公开(公告)日：2008-12-25
申请号：US12139968
申请日：2008-06-16
申请人： Yuichiro SASAKI , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
发明人： Yuichiro SASAKI , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
IPC分类号： H01L21/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/66795
摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved.It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.
摘要翻译：实现了可以精确控制剂量的等离子体掺杂方法。剂量的面内均匀性得到改善。已经发现，如果通过将B2H6 / He等离子体照射到硅衬底上施加偏压，则存在使硼剂量基本均匀的时间，并且饱和时间比较长并且易于稳定使用，与可以确保装置控制的可重复性的时间相比。本发明已经确定了结果。也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。此外，如果时间进一步增加，则剂量降低。剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

30. 发明授权

US07407874B2 Plasma doping method 失效
公开(公告)号：US07407874B2
公开(公告)日：2008-08-05
申请号：US11647149
申请日：2006-12-29
申请人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
发明人： Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Tomohiro Okumura
IPC分类号： H01L21/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01L29/66795
摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved.It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

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